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IRFB3306G MOSFET (IC) Datasheet. Cross Reference Search. IRFB3306G Equivalent

Type Designator: IRFB3306G

Type of IRFB3306G transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 230

Maximum drain-source voltage |Uds|, V: 60

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 160

Maximum junction temperature (Tj), °C:

Rise Time of IRFB3306G transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0042

Package: TO220AB

IRFB3306G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFB3306G PDF doc:

4.1. irfb33n15d_irfs33n15d_irfsl33n15d.pdf Size:142K _international_rectifier

IRFB3306G
IRFB3306G

PD- 93903 IRFB33N15D IRFS33N15D SMPS MOSFET IRFSL33N15D HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.056Ω 33A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current T

See also transistors datasheet: IRFB31N20D , IRFB3206 , IRFB3206G , IRFB3207 , IRFB3207Z , IRFB3207ZG , IRFB3256 , IRFB3306 , 2N5485 , IRFB3307 , IRFB3307Z , IRFB3307ZG , IRFB33N15D , IRFB3507 , IRFB3607 , IRFB3607G , IRFB3806 .

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