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IRFB3307 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFB3307

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 250 W

Maximum Drain-Source Voltage |Vds|: 75 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 130 A

Maximum Drain-Source On-State Resistance (Rds): 0.0063 Ohm

Package: TO220AB

IRFB3307 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFB3307 PDF doc:

4.1. irfb33n15d_irfs33n15d_irfsl33n15d.pdf Size:142K _international_rectifier

IRFB3307
IRFB3307

PD- 93903 IRFB33N15D IRFS33N15D SMPS MOSFET IRFSL33N15D HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.056Ω 33A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current T

Datasheet: IRFB3206 , IRFB3206G , IRFB3207 , IRFB3207Z , IRFB3207ZG , IRFB3256 , IRFB3306 , IRFB3306G , 2SK3878 , IRFB3307Z , IRFB3307ZG , IRFB33N15D , IRFB3507 , IRFB3607 , IRFB3607G , IRFB3806 , IRFB38N20D .

 


IRFB3307
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IRFB3307
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