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IRFB3307 MOSFET (IC) Datasheet. Cross Reference Search. IRFB3307 Equivalent

Type Designator: IRFB3307

Type of IRFB3307 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 250

Maximum drain-source voltage |Uds|, V: 75

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 130

Maximum junction temperature (Tj), °C:

Rise Time of IRFB3307 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0063

Package: TO220AB

IRFB3307 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFB3307 PDF doc:

4.1. irfb33n15d_irfs33n15d_irfsl33n15d.pdf Size:142K _international_rectifier

IRFB3307
IRFB3307

PD- 93903 IRFB33N15D IRFS33N15D SMPS MOSFET IRFSL33N15D HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.056Ω 33A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current T

See also transistors datasheet: IRFB3206 , IRFB3206G , IRFB3207 , IRFB3207Z , IRFB3207ZG , IRFB3256 , IRFB3306 , IRFB3306G , 2SK3878 , IRFB3307Z , IRFB3307ZG , IRFB33N15D , IRFB3507 , IRFB3607 , IRFB3607G , IRFB3806 , IRFB38N20D .

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 IRFB3307 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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