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IRFB3607G MOSFET (IC) Datasheet. Cross Reference Search. IRFB3607G Equivalent

Type Designator: IRFB3607G

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd), W: 140

Maximum Drain-Source Voltage |Vds|, V: 75

Maximum Gate-Source Voltage |Vgs|, V: 20

Maximum Drain Current |Id|, A: 80

Maximum Junction Temperature (Tj), °C:

Rise Time (tr), nS:

Drain-Source Capacitance (Cd), pF:

Maximum Drain-Source On-State Resistance (Rds), Ohm: 0.009

Package: TO220AB

IRFB3607G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFB3607G PDF doc:

5.1. irfb33n15d_irfs33n15d_irfsl33n15d.pdf Size:142K _international_rectifier

IRFB3607G
IRFB3607G

PD- 93903 IRFB33N15D IRFS33N15D SMPS MOSFET IRFSL33N15D HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.056Ω 33A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current T

See also transistors datasheet: IRFB3306 , IRFB3306G , IRFB3307 , IRFB3307Z , IRFB3307ZG , IRFB33N15D , IRFB3507 , IRFB3607 , 2SK3562 , IRFB3806 , IRFB38N20D , IRFB4019 , IRFB4020 , IRFB4110 , IRFB4110G , IRFB4110Q , IRFB4115 .

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