MOSFET Datasheet


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IRFB4019
  IRFB4019
  IRFB4019
 
IRFB4019
  IRFB4019
  IRFB4019
 
IRFB4019
  IRFB4019
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AOD409
AOD4102 ..AP18T10GH-HF
AP18T10GI ..AP4036AGYT-HF
AP4085I ..AP55T06GS-HF
AP55T10GH-HF ..AP9450GYT-HF
AP9451GG-HF ..AP9970GK-HF
AP9970GP-HF ..APT40M35PVR
APT40M42JN ..AUIRFB3206
AUIRFB3207 ..BF1208
BF1208D ..BLF6G15L-500H
BLF6G15LS-500H ..BSC052N03LS
BSC052N03SG ..BSS84L
BSS84LT1 ..BUK7215-55A
BUK72150-55A ..BUK9520-55
BUK9520-55A ..BUZ902DP
BUZ902P ..CEDF634
CEDF640 ..CEP3100
CEP3120 ..DMC4028SSD
DMC4040SSD ..EC3A04B
EC4401C ..FDB120N10
FDB12N50F ..FDD5N50
FDD5N50F ..FDMC7660
FDMC7660 ..FDP025N06
FDP030N06 ..FDS3992
FDS3992 ..FDV305N
FDY1002PZ ..FQD12P10TM_F085
FQD13N06 ..FQPF5N40
FQPF5N40 ..FRS140D
FRS140H ..H12N65F
H2301N ..HAT2033R
HAT2036R ..HUF75307D3
HUF75307D3S ..IPA65R600E6
IPA65R660CFD ..IPD068P03L3G
IPD075N03LG ..IPI60R385CP
IPI60R520CP ..IPP80N06S2-09
IPP80N06S2-H5 ..IRF1607
IRF1902 ..IRF635
IRF636A ..IRF7416Q
IRF741FI ..IRF9520N
IRF9520NL ..IRFF310
IRFF320 ..IRFP044
IRFP044N ..IRFR224A
IRFR2307Z ..IRFS721
IRFS722 ..IRFU9120N
IRFU9121 ..IRL630S
IRL631 ..IRLU2908
IRLU3103 ..IXFH150N17T
IXFH150N17T2 ..IXFK48N60Q3
IXFK50N50 ..IXFP4N100P
IXFP4N100PM ..IXFV26N60P
IXFV26N60PS ..IXTA26P20P
IXTA28P065T ..IXTH36P10
IXTH36P15P ..IXTP180N085T
IXTP180N10T ..IXTT100N25P
IXTT10N100D ..JANSR2N7402
JANSR2N7403 ..KMB6D0DN30QA
KMB6D0DN30QB ..KU2307K
KU2307Q ..MTB30N06J3
MTB30N06Q8 ..MTN2328N3
MTN2342N3 ..MTP4835V8
MTP50P03HDL ..NTB5605P
NTB60N06 ..NTP6413AN
NTR0202PL ..PHP7N60E
PHP80N06LT ..PSMN102-200Y
PSMN130-200D ..RF1S30P05SM
RF1S30P06SM ..RJK03C0DPA
RJK03C1DPB ..RQJ0303PGDQA
RQJ0304DQDQA ..SDF120JAB-U
SDF120JDA-D ..SFT1423
SFT1431 ..SMG5409
SMK0160 ..SML50L47
SML50M60BFN ..SPI15N60C3
SPI15N60CFD ..SSG4940N
SSG4940NC ..SSM3K36FS
SSM3K36MFV ..SSR3055A
SSR3055LA ..STD10NM60ND
STD10NM65N ..STE150N10
STE15N100 ..STI24NM65N
STI26NM60N ..STP19N06
STP19N06FI ..STP60NS04ZB
STP62NS04Z ..STV4NA60
STV4NA80 ..TK100F06K3
TK10A50D ..TPC6008-H
TPC6009-H ..TPCA8102
TPCA8103 ..UT2N10
UT3006 ..WTU1333
WTX1012 ..ZXMP6A17E6
ZXMP6A17G ..ZXMS6006SG
 
IRFB4019 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRFB4019 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRFB4019

Type of IRFB4019 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 80

Maximum drain-source voltage |Uds|, V: 150

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 17

Maximum junction temperature (Tj), °C:

Rise Time of IRFB4019 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.095

Package: TO220AB

Equivalent transistors for IRFB4019

IRFB4019 PDF doc:

5.1. irfb4710.pdf Size:245K _international_rectifier

IRFB4019
IRFB4019
PD- 94080 IRFB4710 IRFS4710 IRFSL4710 HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 100V 0.014? 75A Motor Control Uninterrutible Power Supplies Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB D2Pak TO-262 Fully Characterized Avalanche Voltage IRFB4710 IRFS4710 IRFSL4710 and Current Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25C Continuous Drain Current, VGS @ 10V 75 ID @ TC = 100C Continuous Drain Current, VGS @ 10V 53 A IDM Pulsed Drain Current 300 PD @TA = 25C Power Dissipation 3.8 W PD @TC = 25C Power Dissipation 200 Linear Derating Factor 1.4 W/C VGS Gate-to-Source Voltage 20 V dv/dt Peak Diode Recovery dv/dt 8.2 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting

5.2. irfb42n20d.pdf Size:215K _international_rectifier

IRFB4019
IRFB4019
PD- 94208 SMPS MOSFET IRFB42N20D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.055? 44A Motor Control Uninterrutible Power Supplies Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage TO-220AB and Current Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25C Continuous Drain Current, VGS @ 10V 44 ID @ TC = 100C Continuous Drain Current, VGS @ 10V 31 A IDM Pulsed Drain Current 180 PD @TA = 25C Power Dissipation 2.4 W PD @TC = 25C Power Dissipation 330 Linear Derating Factor 2.2 W/C VGS Gate-to-Source Voltage 30 V dv/dt Peak Diode Recovery dv/dt 2.5 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal

See also transistors datasheet: IRFB3307Z , IRFB3307ZG , IRFB33N15D , IRFB3507 , IRFB3607 , IRFB3607G , IRFB3806 , IRFB38N20D , 2SK1058 , IRFB4020 , IRFB4110 , IRFB4110G , IRFB4110Q , IRFB4115 , IRFB4115G , IRFB4127 , IRFB41N15D .

Keywords

 IRFB4019 Datasheet  IRFB4019 Datenblatt  IRFB4019 RoHS  IRFB4019 Distributor
 IRFB4019 Application Notes  IRFB4019 Component  IRFB4019 Circuit  IRFB4019 Schematic
 IRFB4019 Equivalent  IRFB4019 Cross Reference  IRFB4019 Data Sheet  IRFB4019 Fiche Technique

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