IRFP4321 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRFP4321

Type of IRFP4321 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 310

Maximum drain-source voltage |Uds|, V: 150V

Maximum gate-source voltage |Ugs|, V: 30

Maximum drain current |Id|, A: 78

Maximum junction temperature (Tj), °C:

Rise Time of IRFP4321 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0155

Package: TO247AC

Equivalent transistors for IRFP4321

IRFP4321 PDF documents for downloads:

5.1. irfp460.pdf Size:91K _st

IRFP460 ? N - CHANNEL 500V - 0.22 ? - 20 A - TO-247 PowerMESH? MOSFET TYPE VDSS RDS(on) ID IRFP460 500 V < 0.27 ? 20 A TYPICAL R = 0.22 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION 3 2 This power MOSFET is designed using the 1 company’s consolidated strip layout-based MESH TO-247 OVERLAY process. This technology matches ? and improves the performances compared with standard parts from various sources. APPLICATIONS HIGH CURRENT SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) INTERNAL SCHEMATIC DIAGRAM DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 500 V VDGR 500 V Drain- gate Voltage (RGS = 20 k ) ? VGS Gate-source Voltage ± 20 V o ID Drain Current (continuous) at Tc = 25 C20 A o ID Drain Current (continuous) at Tc = 100 C13 A IDM(•) Drain Current (pulsed) 8

5.2. irfp450.pdf Size:276K _st

IRFP450 N-CHANNEL 500V - 0.31? - 14A TO-247 PowerMesh™II MOSFET TYPE VDSS RDS(on) ID IRFP450 500V < 0.38? 14 A TYPICAL RDS(on) = 0.31? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK 3 GATE CHARGE MINIMIZED 2 1 TO-247 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- INTERNAL SCHEMATIC DIAGRAM ing edge for what concerns switching speed, gate charge and ruggedness. APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) HIGH CURRENT, HIGH SPEED SWITCHING DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 500 V VDGR Drain-gate Voltage (RGS = 20 k?) 500 V VGS Gate- source Voltage ±30 V ID Drain Current (continuos) at TC = 25°C 14 A ID Drain Cur

5.3. irfp460c.pdf Size:770K _fairchild_semi

February 2002 IRFP460C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 20A, 500V, RDS(on) = 0.24? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 130nC) planar stripe, DMOS technology. • Low Crss ( typical 60 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and power factor corrections. D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? TO-3PN IRFP Series G D S S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter IRFP460C Units VDSS Drain-Source Voltage 500 V ID Dr

5.4. irfp460npbf.pdf Size:161K _international_rectifier

PD-94809 SMPS MOSFET IRFP460NPbF HEXFET® Power MOSFET Applications Switch Mode Power Supply ( SMPS ) VDSS Rds(on) max ID Uninterruptable Power Supply 500V 0.24? 20A High speed power switching Switch Mode Power Supply ( SMPS ) Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current TO-247AC Effective Coss specified ( See AN1001) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 20 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 13 A IDM Pulsed Drain Current 80 PD @TC = 25°C Power Dissipation 280 W Linear Derating Factor 2.2 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or

5.5. irfp460as.pdf Size:115K _international_rectifier

PD-94011A SMPS MOSFET IRFP460AS HEXFET® Power MOSFET Applications SMPS, UPS, Welding and High Speed VDSS Rds(on) max ID Power Switching 500V 0.27? 20A Benefits Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Solder plated and leadformed for surface mounting Description Third Generation HEXFET®s from International Rectifier provide the designer with the best combination of fast switching, ruggedized SMD-247 device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. This plated and leadformed version of the TO-247 package

5.6. irfp450a.pdf Size:101K _international_rectifier

PD -91884 SMPS MOSFET IRFP450A HEXFET® Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.40? 14A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current G D S TO-247AC Effective Coss Specified ( See AN 1001) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 14 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 8.7 A IDM Pulsed Drain Current 56 PD @TC = 25°C Power Dissipation 190 W Linear Derating Factor 1.5 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 4.1 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m) Typical SMPS T

5.7. irfp4710.pdf Size:103K _international_rectifier

PD - 94361 IRFP4710 HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 100V 0.014? 72A Motor Control Uninterruptible Power Supplies Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-247AC Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 72 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 51 A IDM Pulsed Drain Current 300 PD @TC = 25°C Power Dissipation 190 W Linear Derating Factor 1.2 W/°C VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt 8.2 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m) Thermal Resistance Parameter Typ. Max. Units R?JC Junc

5.8. irfp450lc.pdf Size:159K _international_rectifier

PD - 9.1231 IRFP450LC HEXFET® Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement VDSS = 500V Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss RDS(on) = 0.40? Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 14A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of HEXFETs offer the designer a new standard in power transistors for switching applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. Absolute Maximu

5.9. irfp450npbf.pdf Size:199K _international_rectifier

PD- 95663 SMPS MOSFET IRFP450NPbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.37? 14A l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current TO-247AC l Effective Coss Specified (See AN 1001) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 14 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 8.8 A IDM Pulsed Drain Current 56 PD @TC = 25°C Power Dissipation 200 W Linear Derating Factor 1.6 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt ? 5.0 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)

5.10. irfp448.pdf Size:864K _international_rectifier

PD - 94899 IRFP448PbF • Lead-Free 12/18/03 Document Number: 91229 www.vishay.com 1 IRFP448PbF Document Number: 91229 www.vishay.com 2 IRFP448PbF Document Number: 91229 www.vishay.com 3 IRFP448PbF Document Number: 91229 www.vishay.com 4 IRFP448PbF Document Number: 91229 www.vishay.com 5 IRFP448PbF Document Number: 91229 www.vishay.com 6 IRFP448PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 15.30 (.602) 0.25 (.010) M D B M 2.50 (.089) - B - - A - 1.50 (.059) 5.50 (.217) 4 20.30 (.800) NOTES: 5.50 (.217) 19.70 (.775) 2X 4.50 (.177) 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 1 2 3 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE - C - TO-247-AC. 14.80 (.583) 4.30 (.170) 14.20 (.559) 3.70 (.145) LEAD ASSIGNMENTS Hexfet IGBT LEAD ASSIGNMENTS 2.40 (.094) 0.80 (.031) 1.40 (.056) 1 - Gate 1 - Gate 3X 2.00 (.079) 3X

5.11. irfp460p.pdf Size:174K _international_rectifier

PD-93946A IRFP460P Dynamic dv/dt Rating HEXFET® Power MOSFET Repetitive Avalanche Rated D Isolated Central Mounting Hole VDSS = 500V Fast Switching Ease of Paralleling Simple Drive Requirements RDS(on) = 0.27? G Solder Plated for Reflowing ID = 20A Description S Third Generation HEXFET®s from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. TO-247AC The solder plated version of the TO-247 allows the reflow soldering of the package heatsink to a substrate material. Absolute Maximum Ratings Parameter

5.12. irfp440.pdf Size:925K _international_rectifier

PD - 95198 IRFP440PbF • Lead-Free 4/27/04 Document Number: 91228 www.vishay.com 1 IRFP440PbF Document Number: 91228 www.vishay.com 2 IRFP440PbF Document Number: 91228 www.vishay.com 3 IRFP440PbF Document Number: 91228 www.vishay.com 4 IRFP440PbF Document Number: 91228 www.vishay.com 5 IRFP440PbF Document Number: 91228 www.vishay.com 6 IRFP440PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information I I I I I I I I I I I N?te: "P" in assembly line position indicates "Lead-Free" = I Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 04/04 Document Number: 91228 www.vishay.com 7 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier’s Power Co

5.13. irfp460apbf.pdf Size:206K _international_rectifier

PD- 94853 SMPS MOSFET IRFP460APbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.27? 20A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current G D S TO-247AC l Effective Coss specified ( See AN1001) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 20 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 13 A IDM Pulsed Drain Current 80 PD @TC = 25°C Power Dissipation 280 W Linear Derating Factor 2.2 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt ? 3.8 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 lbf•in

5.14. irfp460.pdf Size:873K _international_rectifier

PD - 94901 IRFP460PbF • Lead-Free 12/19/03 Document Number: 91237 www.vishay.com 1 IRFP460PbF Document Number: 91237 www.vishay.com 2 IRFP460PbF Document Number: 91237 www.vishay.com 3 IRFP460PbF Document Number: 91237 www.vishay.com 4 IRFP460PbF Document Number: 91237 www.vishay.com 5 IRFP460PbF Document Number: 91237 www.vishay.com 6 IRFP460PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 15.30 (.602) 0.25 (.010) M D B M 2.50 (.089) - B - - A - 1.50 (.059) 5.50 (.217) 4 20.30 (.800) NOTES: 5.50 (.217) 19.70 (.775) 2X 4.50 (.177) 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 1 2 3 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE - C - TO-247-AC. 14.80 (.583) 4.30 (.170) 14.20 (.559) 3.70 (.145) LEAD ASSIGNMENTS Hexfet IGBT LEAD ASSIGNMENTS 2.40 (.094) 0.80 (.031) 1.40 (.056) 1 - Gate 1 - Gate 3X 2.00 (.079) 3X

5.15. irfp460n.pdf Size:94K _international_rectifier

PD-94098 SMPS MOSFET IRFP460N HEXFET® Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.24? 20A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current TO-247AC Effective Coss specified ( See AN1001) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 20 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 13 A IDM Pulsed Drain Current 80 PD @TC = 25°C Power Dissipation 280 W Linear Derating Factor 2.2 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m) Typical SMPS Topologie

5.16. irfp450apbf.pdf Size:224K _international_rectifier

PD -95054 SMPS MOSFET IRFP450APbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.40? 14A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current G D S TO-247AC l Effective Coss Specified ( See AN 1001) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 14 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 8.7 A IDM Pulsed Drain Current 56 PD @TC = 25°C Power Dissipation 190 W Linear Derating Factor 1.5 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt ? 4.1 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 lbf

5.17. irfp450n.pdf Size:121K _international_rectifier

PD- 94216 SMPS MOSFET IRFP450N HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.37? 14A l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current TO-247AC l Effective Coss Specified (See AN 1001) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 14 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 8.8 A IDM Pulsed Drain Current 56 PD @TC = 25°C Power Dissipation 200 W Linear Derating Factor 1.6 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt ? 5.0 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m) Typical SMPS T

5.18. irfp460a.pdf Size:95K _international_rectifier

PD- 91880 SMPS MOSFET IRFP460A HEXFET® Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.27? 20A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current G D S TO-247AC Effective Coss specified ( See AN1001) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 20 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 13 A IDM Pulsed Drain Current 80 PD @TC = 25°C Power Dissipation 280 W Linear Derating Factor 2.2 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 3.8 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m) Typical SMPS Top

5.19. irfp460lc.pdf Size:154K _international_rectifier

PD - 9.1232 IRFP460LC HEXFET® Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating VDSS = 500V Reduced Ciss, Coss, Crss Isolated Central Mounting Hole RDS(on) = 0.27? Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 20A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of HEXFETs offer the designer a new standard in power transistors for switching applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. Absolute Maximu

5.20. irfp450.pdf Size:876K _international_rectifier

PD - 94852 IRFP450PbF • Lead-Free 11/17/03 Document Number: 91233 www.vishay.com 1 IRFP450PbF Document Number: 91233 www.vishay.com 2 IRFP450PbF Document Number: 91233 www.vishay.com 3 IRFP450PbF Document Number: 91233 www.vishay.com 4 IRFP450PbF Document Number: 91233 www.vishay.com 5 IRFP450PbF Document Number: 91233 www.vishay.com 6 IRFP450PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 15.30 (.602) 0.25 (.010) M D B M 2.50 (.089) - B - - A - 1.50 (.059) 5.50 (.217) 4 20.30 (.800) NOTES: 5.50 (.217) 19.70 (.775) 2X 4.50 (.177) 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 1 2 3 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE - C - TO-247-AC. 14.80 (.583) 4.30 (.170) 14.20 (.559) 3.70 (.145) LEAD ASSIGNMENTS Hexfet IGBT LEAD ASSIGNMENTS 2.40 (.094) 0.80 (.031) 1.40 (.056) 1 - Gate 1 - Gate 2.00 (.079) 3X 3X

5.21. irfp460lcpbf.pdf Size:205K _international_rectifier

PD - 94902 IRFP460LCPbF • Lead-Free 12/19/03 Document Number: 91235 www.vishay.com 1 IRFP460LCPbF Document Number: 91235 www.vishay.com 2 IRFP460LCPbF Document Number: 91235 www.vishay.com 3 IRFP460LCPbF Document Number: 91235 www.vishay.com 4 IRFP460LCPbF Document Number: 91235 www.vishay.com 5 IRFP460LCPbF Document Number: 91235 www.vishay.com 6 IRFP460LCPbF Document Number: 91235 www.vishay.com 7 IRFP460LCPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 15.30 (.602) 0.25 (.010) M D B M 2.50 (.089) - B - - A - 1.50 (.059) 5.50 (.217) 4 20.30 (.800) NOTES: 5.50 (.217) 19.70 (.775) 2X 4.50 (.177) 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 1 2 3 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE - C - TO-247-AC. 14.80 (.583) 4.30 (.170) 14.20 (.559) 3.70 (.145) LEAD ASSIGNMENTS Hexfet IGBT LEAD ASSIGNMENTS 2.40

5.22. irfp450a.pdf Size:942K _samsung

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.4 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 500V Lower RDS(ON) : 0.308 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 500 Continuous Drain Current (TC=25 o ) C 14 ID A o C Continuous Drain Current (TC=100 ) 8.8 IDM Drain Current-Pulsed A 1 56 O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 1089 O IAR Avalanche Current 14 A 1 O EAR Repetitive Avalanche Energy 1 20.5 mJ O dv/dt Peak Diode Recovery dv/dt 3 3.5 V/ns O Total Power Dissipation (TC=25 o ) C 205 W PD Linear Derating Factor W/ oC 1.64 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300 Purpo

5.23. irfp440a.pdf Size:932K _samsung

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.85 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 500V Lower RDS(ON) : 0.638 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 500 o Continuous Drain Current (TC=25 C) 8.5 ID A o C Continuous Drain Current (TC=100 ) 5.4 IDM Drain Current-Pulsed 1 34 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 602 O IAR Avalanche Current 1 8.5 A O EAR Repetitive Avalanche Energy 1 mJ 16.2 O 3 dv/dt Peak Diode Recovery dv/dt V/ns 3.5 O Total Power Dissipation (TC=25 oC ) 162 W PD Linear Derating Factor W/ oC 1.3 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300 Purp

5.24. irfp450a_sihfp450a.pdf Size:302K _vishay

IRFP450A, SiHFP450A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) (?)VGS = 10 V 0.40 • Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 64 Ruggedness COMPLIANT Qgs (nC) 16 • Fully Characterized Capacitance and Qgd (nC) 26 Avalanche Voltage and Current Configuration Single • Effective Coss Specified D • Lead (Pb)-free Available TO-247 APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply G • High Speed Power Switching S TYPICAL SMPS TOPOLOGIES D S G • Two Transistor Forward N-Channel MOSFET • Half Bridge, Full Bridge • PFC Boost ORDERING INFORMATION Package TO-247 IRFP450APbF Lead (Pb)-free SiHFP450A-E3 IRFP450A SnPb SiHFP450A ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 30 TC = 25 °C 14 Continuous Drai

5.25. irfp460lc_sihfp460lc.pdf Size:1124K _vishay

IRFP460LC, SiHFP460LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Ultra Low Gate Charge VDS (V) 500 • Reduced Gate Drive Requirement Available RDS(on) (?)VGS = 10 V 0.27 • Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 120 COMPLIANT • Reduced Ciss, Coss, Crss Qgs (nC) 32 • Isolated Central Mounting Hole Qgd (nC) 49 • Dynamic dV/dt Rating Configuration Single • Repetitive Avalanche Rated • Lead (Pb)-free Available D DESCRIPTION TO-247 This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFETs technology the device G improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven S D ruggedness and reliabiltity of Power MOSFETs offer the S G designer a new standard in power transistors for switching N-Channel MOSFET applications. The TO-247 package i

5.26. irfp460_sihfp460.pdf Size:156K _vishay

IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 500 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.27 RoHS* • Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT • Fast Switching Qgs (nC) 29 Qgd (nC) 110 • Ease of Paralleling Configuration Single • Simple Drive Requirements D • Lead (Pb)-free Available TO-247 DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness. S The TO-247 package is preferred for commercial-industrial D S G applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the N-Channel MOSFET earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. ORDER

5.27. irfp448_sihfp448.pdf Size:1629K _vishay

IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 500 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.60 RoHS* • Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 84 • Fast Switching Qgs (nC) 8.4 • Ease of Paralleling Qgd (nC) 50 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-247AC Third Generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-247AC package is preferred for S commercial-industrial applications where higher power D S levels preclude the use of TO-220AB devices. The G TO-247AC is similar but superior to the earlier TO-218 N-Channel MOSFET package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety

5.28. irfp460a_sihfp460a.pdf Size:180K _vishay

IRFP460A, SiHFP460A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (?)VGS = 10 V 0.27 • Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 105 COMPLIANT Ruggedness Qgs (nC) 26 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 42 and Current Configuration Single • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC D APPLICATIONS TO-247 • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply G • High Speed Power Switching TYPICAL SMPS TOPOLOGIES S • Full Bridge D S G • PFC Boost N-Channel MOSFET ORDERING INFORMATION Package TO-247 IRFP460APbF Lead (Pb)-free SiHFP460A-E3 IRFP460A SnPb SiHFP460A ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 30 TC = 25 °C 20 Continuous Drain Current VGS at 10 V ID T

5.29. irfp440_sihfp440.pdf Size:1460K _vishay

IRFP440, SiHFP440 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 500 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.85 RoHS* • Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 11 • Ease of Paralleling Qgd (nC) 30 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-247AC Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G The TO-247AC package is preferred for commercial-industrial applications where higher power levels S preclude the use of TO-220AB devices. The TO-247AC is D S G similar but superior to the earlier TO-218 package because of N-Channel MOSFET its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety

5.30. irfp450lc_sihfp450lc.pdf Size:1566K _vishay

IRFP450LC, SiHFP450LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Ultra Low Gate Charge VDS (V) 500 • Reduced Gate Drive Requirement Available RDS(on) (?)VGS = 10 V 0.40 • Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 74 • Reduced Ciss, Coss, Crss COMPLIANT Qgs (nC) 19 • Isolated Central Mounting Hole Qgd (nC) 35 • Dynamic dV/dt Rated Configuration Single • Repetitive Avalanche Rated • Lead (Pb)-free Available D DESCRIPTION TO-247 This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFET technology the device G improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven S D ruggedness and reliability of Power MOSFETs offer the G S designer a new standard in power transistors for switching applications. N-Channel MOSFET The TO-247 package is pre

5.31. irfp450_sihfp450.pdf Size:1560K _vishay

IRFP450, SiHFP450 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 500 • Repetitive Avalanche Rated Available RDS(on) (?)VGS = 10 V 0.40 • Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 150 COMPLIANT • Fast Switching Qgs (nC) 20 • Ease of Paralleling Qgd (nC) 80 • Simple Drive Requirements Configuration Single • Lead (Pb)-free Available D TO-247 DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-247 package is preferred for commercial-industrial S applications where higher power levels preclude the use of D S G TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole. N-Channel MOSFET It also provides greater creepage distances between pins to meet the requirements of most safety specifications. ORDERIN

5.32. irfp460n_sihfp460n.pdf Size:158K _vishay

IRFP460N, SiHFP460N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (?)VGS = 10 V 0.24 • Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 124 COMPLIANT Ruggedness Qgs (nC) 40 • Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 57 Configuration Single • Effective Coss Specified • Lead (Pb)-free Available D TO-247 APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply G • High Speed Power Switching TYPICAL SMPS TOPOLOGIES S D • Full Bridge G S • Power Factor Correction Boost N-Channel MOSFET ORDERING INFORMATION Package TO-247 IRFP460NPbF Lead (Pb)-free SiHFP460N-E3 IRFP460N SnPb SiHFP460N ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 30 TC = 25 °C 20 Continuous Drain Current VGS at 10

5.33. irfp460.pdf Size:77K _ixys

MegaMOSTM IRFP 460 VDSS = 500 V Power MOSFET ID(cont) = 20 A ? RDS(on) = 0.27? ? ? ? N-Channel Enhancement Mode, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 M? 500 V VGS Continuous ±20 V D (TAB) VGSM Transient ±30 V ID25 TC = 25°C20 A G = Gate, D = Drain, IDM TC = 25°C, pulse width limited by TJM 80 A S = Source, TAB = Drain IAR 20 A EAR TC = 25°C28 mJ dv/dt IS ? IDM, di/dt ? 100 A/µs, VDD ? VDSS, 3.5 V/ns TJ ? 150°C, RG = 2 ? Features PD TC = 25°C 260 W Repetitive avalanche energy rated TJ -55 ... +150 °C Fast switching times Low RDS (on) HDMOSTM process TJM 150 °C Rugged polysilicon gate cell structure Tstg -55 ... +150 °C High Commutating dv/dt Rating Md Mounting torque 1.15/10 Nm/lb.in. Weight 6 g Applications Maximum lead temperature for soldering 300 °C Switching Power Supplies 1.6 mm (0.062 in.) from case for 10 s Motor controls Symbol Test Conditions Charac

5.34. irfp450.pdf Size:46K _ixys

IRFP 450 VDSS = 500 V Standard Power MOSFET ID(cont) = 14 A ? RDS(on) = 0.40 ? ? ? ? N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 M? 500 V VGS Continuous ±20 V D (TAB) VGSM Transient ±30 V ID25 TC = 25°C14 A G = Gate, D = Drain, IDM TC = 25°C, pulse width limited by TJM 56 A S = Source, TAB = Drain IAR 14 A EAR TC = 25°C19 mJ dv/dt IS ? IDM, di/dt ? 100 A/µs, VDD ? VDSS, 3.5 V/ns TJ ? 150°C, RG = 2 ? PD TC = 25°C 190 W TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C Features Md Mounting torque 1.13/10 Nm/lb.in. International standard packages Weight 6 gLow RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Maximum lead temperature for soldering 300 °C Low package inductance (< 5 nH) 1.6 mm (0.062 in.) from case for 10 s - easy to drive and to protect Fast switching times Symbol Test Conditions Characteristic Values Applications (TJ = 25°C, u

See also transistors datasheet: IRFP3703 , IRFP4004 , IRFP4110 , IRFP4227 , IRFP4229 , IRFP4232 , IRFP4242 , IRFP4310Z , IRF640 , IRFP4332 , IRFP4368 , IRFP4410Z , IRFP4468 , IRFP4568 , IRFP4668 , IRFP4710 , IRFP4768 .

Keywords