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IRFR4615 MOSFET (IC) Datasheet. Cross Reference Search. IRFR4615 Equivalent

Type Designator: IRFR4615

Type of IRFR4615 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 144

Maximum drain-source voltage |Uds|, V: 150

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 33

Maximum junction temperature (Tj), °C:

Rise Time of IRFR4615 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.042

Package: DPAK

IRFR4615 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFR4615 PDF doc:

5.1. irfr420_irfu420.pdf Size:879K _international_rectifier

IRFR4615
IRFR4615

PD - 95078A IRFR420PbF IRFU420PbF • Lead-Free 1/7/05 Document Number: 91275 www.vishay.com 1 IRFR/U420PbF Document Number: 91275 www.vishay.com 2 IRFR/U420PbF Document Number: 91275 www.vishay.com 3 IRFR/U420PbF Document Number: 91275 www.vishay.com 4 IRFR/U420PbF Document Number: 91275 www.vishay.com 5 IRFR/U420PbF Document Number: 91275 www.vishay.com 6 IRFR/U420PbF

5.2. irfr430a.pdf Size:111K _international_rectifier

IRFR4615
IRFR4615

PD - 94356A SMPS MOSFET IRFR430A IRFU430A Applications HEXFET® Power MOSFET Switch Mode Power Supply (SMPS) Uninterruptible Power Supply VDSS RDS(on) max ID High speed power switching 500V 1.7? 5.0A Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and D-Pak I-Pak Avalanche V

5.3. irfr420apbf_irfu420apbf.pdf Size:248K _international_rectifier

IRFR4615
IRFR4615

PD - 95075A SMPS MOSFET IRFR420APbF IRFU420APbF Applications HEXFET® Power MOSFET l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply VDSS RDS(on) max ID l High speed power switching 500V 3.0? 3.3A l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and

5.4. irfr430apbf_irfu430apbf.pdf Size:251K _international_rectifier

IRFR4615
IRFR4615

PD -95076A SMPS MOSFET IRFR430APbF IRFU430APbF Applications HEXFET® Power MOSFET l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply VDSS RDS(on) max ID l High speed power switching 500V 1.7? 5.0A l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and

5.5. irfr4105.pdf Size:144K _international_rectifier

IRFR4615
IRFR4615

PD - 91302C IRFR/U4105 HEXFET® Power MOSFET Ultra Low On-Resistance D Surface Mount (IRFR4105) VDSS = 55V Straight Lead (IRFU4105) Fast Switching RDS(on) = 0.045? Fully Avalanche Rated G Description ID = 27A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benef

5.6. irfr420.pdf Size:170K _international_rectifier

IRFR4615
IRFR4615

5.7. irfr0xx_irfr1xx_irfr2xx_irfr3xx_irfr420_irfr9xx_.pdf Size:86K _international_rectifier

IRFR4615
IRFR4615



5.8. irfr420a.pdf Size:114K _international_rectifier

IRFR4615
IRFR4615

PD - 94355 SMPS MOSFET IRFR420A IRFU420A Applications HEXFET® Power MOSFET Switch Mode Power Supply (SMPS) Uninterruptible Power Supply VDSS RDS(on) max ID High speed power switching 500V 3.0? 3.3A Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and D-Pak I-Pak Avalanche Vo

5.9. irfr430a.pdf Size:497K _samsung

IRFR4615
IRFR4615

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 1.5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.5 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 1.169 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characterist

5.10. irfr420a.pdf Size:500K _samsung

IRFR4615
IRFR4615

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 3.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 2.000 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characterist

5.11. irfr420a_irfu420a_sihfr420a_sihfu420a.pdf Size:241K _vishay

IRFR4615
IRFR4615

IRFR420A, IRFU420A, SiHFR420A, SiHFU420A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) (?)VGS = 10 V 3.0 • Low Gate Charge Qg Results in Simple Drive Requirement Qg (Max.) (nC) 17 • Improved Gate, Avalanche and Dynamic Qgs (nC) 4.3 dV/dt Ruggedness Qgd (nC) 8.5 • Fully Characterized Capacitance and A

5.12. irfr430a_irfu430a_sihfr430a_sihfu430a.pdf Size:154K _vishay

IRFR4615
IRFR4615

IRFR430A, IRFU430A, SiHFR430A, SiHFU430A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (?)VGS = 10 V 1.7 RoHS* • Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 24 COMPLIANT Ruggedness Qgs (nC) 6.5 Qgd (nC) 13 • Fully Characterized Capacitance and Avalanche Voltage Configurat

5.13. irfr420_irfu420_sihfr420_sihfu420.pdf Size:1841K _vishay

IRFR4615
IRFR4615

IRFR420, IRFU420, SiHFR420, SiHFU420 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) (?)VGS = 10 V 3.0 • Dynamic dV/dt Rating • Repetitive Avalanche Rated Qg (Max.) (nC) 19 • Surface Mount (IRFR420, SiHFR420) Qgs (nC) 3.3 • Straight Lead (IRFU420, SiHFU420) Qgd (nC) 13 • Available in Tape and Reel Conf

5.14. irfr410_irfu410.pdf Size:62K _intersil

IRFR4615
IRFR4615

IRFR410, IRFU410 Data Sheet July 1999 File Number 3372.2 1.5A, 500V, 7.000 Ohm, N-Channel Power Features MOSFETs • 1.5A, 500V These are N-Channel enhancement mode silicon gate • rDS(ON) = 7.000Ω power field effect transistors. They are advanced power • Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the b

See also transistors datasheet: IRFR3709Z , IRFR3709ZC , IRFR3710Z , IRFR3711Z , IRFR3711ZC , IRFR3806 , IRFR4104 , IRFR4105Z , IRFB4227 , IRFR4620 , IRFR48Z , IRFR540Z , IRFR9N20D , IRFS23N15D , IRFS23N20D , IRFS3004 , IRFS3004-7P .

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 IRFR4615 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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