IRFS4115 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRFS4115

Type of IRFS4115 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 375

Maximum drain-source voltage |Uds|, V: 150V

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 99

Maximum junction temperature (Tj), °C:

Rise Time of IRFS4115 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0121

Package: D2Pak

Equivalent transistors for IRFS4115

IRFS4115 PDF documents for downloads:

4.1. irfs41n15d.pdf Size:193K _international_rectifier

PD- 93804A IRFB41N15D IRFS41N15D SMPS MOSFET IRFSL41N15D HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.045? 41A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current TO-220AB D2Pak TO-262 IRFB41N15D IRFS41N15D IRFSL41N15D Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 41 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 29 A IDM Pulsed Drain Current 164 PD @TA = 25°C Power Dissipation 3.1 W PD @TC = 25°C Power Dissipation 200 Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 2.7 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 scre

5.1. irfs450b.pdf Size:687K _fairchild_semi

November 2001 IRFS450B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9.6A, 500V, RDS(on) = 0.39? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 87 nC) planar, DMOS technology. • Low Crss ( typical 60 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge. D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? TO-3PF G D S IRFS Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter IRFS450B Units

5.2. irfs42n20d.pdf Size:67K _international_rectifier

PD - 94114 PROVISIONAL IRFB42N20D IRFS42N20D SMPS MOSFET IRFSL42N20D HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.055? 42.6A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB D2Pak TO-262 Fully Characterized Avalanche Voltage IRFB42N20D IRFS42N20D IRFSL42N20D and Current Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 42.6 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 30 A IDM Pulsed Drain Current 170 PD @TA = 25°C Power Dissipation 3.8 W PD @TC = 25°C Power Dissipation 300 Linear Derating Factor 2 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt TBD V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 260 (1.6mm from case ) Mounting tor

See also transistors datasheet: IRFS3307Z , IRFS33N15D , IRFS3507 , IRFS3607 , IRFS3806 , IRFS38N20D , IRFS4010 , IRFS4010-7P , IRLML2502 , IRFS4115-7P , IRFS4127 , IRFS41N15D , IRFS4227 , IRFS4229 , IRFS4310 , IRFS4310Z , IRFS4321 .

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