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2N5486 MOSFET (IC) Datasheet. Cross Reference Search. 2N5486 Equivalent

Type Designator: 2N5486

Type of 2N5486 transistor: JFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 0.35

Maximum drain-source voltage |Uds|, V: 25

Maximum gate-source voltage |Ugs|, V: 25

Maximum drain current |Id|, A: 0.02

Maximum junction temperature (Tj), °C: 150

Rise Time of 2N5486 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 1

Maximum drain-source on-state resistance (Rds), Ohm: 100

Package: TO92

2N5486 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2N5486 PDF doc:

1.1. 2n5484_2n5485_2n5486_mmbf5484_mmbf5485_mmbf5486.pdf Size:357K _fairchild_semi

2N5486
2N5486

February 2009 2N5484/5485/5486 MMBF5484/5485/5486 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N5484/5485/5486 MMBF5484/5485/5486 Rev. 1.0.0 1 2N5484/5485/5486 MMBF5484/5485/5486 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.0 2 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.0 3 2007 Fairchild Se

1.2. 2n5484_sst5484_2n5485_sst5485_2n5486_sst5486.pdf Size:85K _vishay

2N5486
2N5486

2N/SST5484 Series Vishay Siliconix N-Channel JFETs 2N5484 SST5484 2N5485 SST5485 2N5486 SST5486 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N/SST5484 -0.3 to -3 -25 3 1 2N/SST5485 -0.5 to -4 -25 3.5 4 2N/SST5486 -2 to -6 -25 4 8 FEATURES BENEFITS APPLICATIONS D Excellent High-Frequency Gain: D Wideband High Gain D High-Frequency Amplifier/Mixer

1.3. 2n5484_2n5485_2n5486.pdf Size:74K _central

2N5486
2N5486

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.4. 2n5486.pdf Size:146K _onsemi

2N5486
2N5486

2N5486 JFET VHF/UHF Amplifiers N-Channel Depletion Features Pb-Free Packages are Available* http://onsemi.com 1 DRAIN MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Symbol Value Unit 3 GATE Drain-Gate Voltage VDG 25 Vdc Reverse Gate-Source Voltage VGSR 25 Vdc 2 SOURCE Drain Current ID 30 mAdc Forward Gate Current IG(f) 10 mAdc Total Device Dissipation @ TC = 25C PD

See also transistors datasheet: 2N4392 , 2N4392CSM , 2N4393 , 2N4393CSM , 2N4416 , 2N5045 , 2N5484 , 2N5485 , IRF530 , 2N6656 , 2N6657 , 2N6658 , 2N6659 , 2N6659-LCC4 , 2N6659-SM , 2N6660 , 2N6660JAN .

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