BF997 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: BF997

Type of BF997 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 0.2

Maximum drain-source voltage |Uds|, V: 20V

Maximum gate-source voltage |Ugs|, V: 17

Maximum drain current |Id|, A: 0.03

Maximum junction temperature (Tj), °C: 150

Rise Time of BF997 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 1

Maximum drain-source on-state resistance (Rds), Ohm:

Package: SOT143

Equivalent transistors for BF997

BF997 PDF documents for downloads:

1.1. bf997_2.pdf Size:31K _philips

DISCRETE SEMICONDUCTORS DATA SHEET BF997 N-channel dual-gate MOS-FET April 1991 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF997 FEATURES DESCRIPTION • Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back diodes between gates microminiature package with interconnected source and source and substrate. • Integrated drain resistance to suppress oscillation in the frequency range greater than 1 GHz. APPLICATIONS handbook, halfpage d 4 3 • UHF and VHF applications such as: – UHF/VHF television tuners g2 – Professional communication equipment g1 • Especially intended for use in pre-amplifiers in CATV tuners with a large tuning range up to 500 MHz. 1 2 s,b PINNING Top view MAM039 PIN SYMBOL DESCRIPTION 1 s, b source Marking code: MKp. 2 d drain 3g2 gate 2 Fig.1 Simplified outline (SOT

1.2. bf997.pdf Size:42K _philips

DISCRETE SEMICONDUCTORS DATA SHEET BF997 N-channel dual-gate MOS-FET April 1991 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF997 FEATURES DESCRIPTION • Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back diodes between gates microminiature package with interconnected source and source and substrate. • Integrated drain resistance to suppress oscillation in the frequency range greater than 1 GHz. APPLICATIONS handbook, halfpage d 4 3 • UHF and VHF applications such as: – UHF/VHF television tuners g2 – Professional communication equipment g1 • Especially intended for use in pre-amplifiers in CATV tuners with a large tuning range up to 500 MHz. 1 2 s,b PINNING Top view MAM039 PIN SYMBOL DESCRIPTION 1 s, b source Marking code: MKp. 2 d drain 3g2 gate 2 Fig.1 Simplified outline (SOT

See also transistors datasheet: BF993 , BF994 , BF994S , BF994SR , BF995 , BF996 , BF996S , BF996SR , IRFZ44N , BF998 , BF998R , BF998WR , BFC10 , BFC11 , BFC12 , BFC13 , BFC14 .

Keywords