BFC10 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: BFC10

Type of BFC10 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 520

Maximum drain-source voltage |Uds|, V: 1000V

Maximum gate-source voltage |Ugs|, V: 30

Maximum drain current |Id|, A: 20.5

Maximum junction temperature (Tj), °C: 150

Rise Time of BFC10 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 5425

Maximum drain-source on-state resistance (Rds), Ohm: 0.5

Package: SOT227

Equivalent transistors for BFC10

BFC10 PDF documents for downloads:

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See also transistors datasheet: BF995 , BF996 , BF996S , BF996SR , BF997 , BF998 , BF998R , BF998WR , BS170 , BFC11 , BFC12 , BFC13 , BFC14 , BFC15 , BFC16 , BFC17 , BFC18 .

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