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IRFZ48Z MOSFET (IC) Datasheet. Cross Reference Search. IRFZ48Z Equivalent

Type Designator: IRFZ48Z

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd), W: 91

Maximum Drain-Source Voltage |Vds|, V: 55

Maximum Gate-Source Voltage |Vgs|, V: 20

Maximum Drain Current |Id|, A: 61

Maximum Junction Temperature (Tj), °C:

Rise Time (tr), nS:

Drain-Source Capacitance (Cd), pF:

Maximum Drain-Source On-State Resistance (Rds), Ohm: 0.011

Package: TO220AB

IRFZ48Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFZ48Z PDF doc:

4.1. irfz48n_1.pdf Size:53K _philips

IRFZ48Z
IRFZ48Z

Philips Semiconductors Product specification N-channel enhancement mode IRFZ48N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 64 A features very low on-state re

4.2. irfz48r.pdf Size:136K _international_rectifier

IRFZ48Z
IRFZ48Z

PD - 93958 IRFZ48R HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.018? G Fast Switching Fully Avalanche Rated ID = 50*A Drop in Replacement of the IRFZ48 S for Linear/Audio Applications Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced

4.3. irfz48n.pdf Size:102K _international_rectifier

IRFZ48Z
IRFZ48Z

PD - 91406 IRFZ48N HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 14m? Fast Switching G Fully Avalanche Rated ID = 64A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sil

4.4. irfz48pbf.pdf Size:2033K _international_rectifier

IRFZ48Z
IRFZ48Z

PD - 94956 IRFZ48PbF • Lead-Free 1/29/04 Document Number: 91294 www.vishay.com 1 IRFZ48PbF Document Number: 91294 www.vishay.com 2 IRFZ48PbF Document Number: 91294 www.vishay.com 3 IRFZ48PbF Document Number: 91294 www.vishay.com 4 IRFZ48PbF Document Number: 91294 www.vishay.com 5 IRFZ48PbF Document Number: 91294 www.vishay.com 6 IRFZ48PbF TO-220AB Package Outline Dimen

4.5. irfz48n_1.pdf Size:53K _international_rectifier

IRFZ48Z
IRFZ48Z

Philips Semiconductors Product specification N-channel enhancement mode IRFZ48N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 64 A features very low on-state re

4.6. irfz48s.pdf Size:319K _international_rectifier

IRFZ48Z
IRFZ48Z

PD - 9.894A IRFZ48S/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ48S) Low-profile through-hole (IRFZ48L) 175°C Operating Temperature RDS(on) = 0.018? Fast Switching G ID = 50A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

4.7. irfz48vs.pdf Size:282K _international_rectifier

IRFZ48Z
IRFZ48Z

PD - 94051A IRFZ48VS HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 12m? G Fast Switching Fully Avalanche Rated ID = 72A Optimized for SMPS Applications S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve e

4.8. irfz48v.pdf Size:111K _international_rectifier

IRFZ48Z
IRFZ48Z

PD - 93959A IRFZ48V HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 12m? G Fast Switching Fully Avalanche Rated ID = 72A Optimized for SMPS Applications S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve e

4.9. irfz48.pdf Size:175K _international_rectifier

IRFZ48Z
IRFZ48Z

4.10. irfz48rspbf_irfz48rlpbf.pdf Size:262K _international_rectifier

IRFZ48Z
IRFZ48Z

PD - 95761 IRFZ48RSPbF IRFZ48RLPbF l Advanced Process Technology HEXFET® Power MOSFET l Dynamic dv/dt Rating D l 175°C Operating Temperature VDSS = 60V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.018? l Drop in Replacement of the IRFZ48 G for Linear/Audio Applications ID = 50*A l Lead-Free S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize

4.11. irfz48ns.pdf Size:131K _international_rectifier

IRFZ48Z
IRFZ48Z

PD - 9.1408B IRFZ48NS IRFZ48NL Advanced Process Technology HEXFET® Power MOSFET Surface Mount (IRFZ48NS) Low-profile through-hole (IRFZ48NL) D 175°C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.014? Description G Advanced HEXFET® Power MOSFETs from ID = 64A International Rectifier utilize advanced processing S techniques to achieve extre

4.12. irfz48s-l.pdf Size:192K _international_rectifier

IRFZ48Z
IRFZ48Z

PD - 9.894A IRFZ48S/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ48S) Low-profile through-hole (IRFZ48L) 175°C Operating Temperature RDS(on) = 0.018? Fast Switching G ID = 50A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

4.13. irfz48r_sihfz48r.pdf Size:1059K _vishay

IRFZ48Z
IRFZ48Z

IRFZ48R, SiHFZ48R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS (V) 60 Available • Ultra Low On-Resistance RDS(on) (?)VGS = 10 V 0.018 • Dynamic dV/dt Rating RoHS* COMPLIANT Qg (Max.) (nC) 110 • 175 °C Operating Temperature • Fast Switching Qgs (nC) 29 • Fully Avalanche Rated Qgd (nC) 36 • Drop in Replacement of the SiHFZ48 for Linear/Aud

4.14. irfz48rs_irfz48rl_sihfz48rs_sihfz48rl.pdf Size:203K _vishay

IRFZ48Z
IRFZ48Z

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition • Advanced Process Technology RDS(on) (?)VGS = 10 V 0.018 • Dynamic dV/dt Qg (Max.) (nC) 110 • 175 °C Operating Temperature Qgs (nC) 29 • Fast Switching Qgd (nC) 36 • Fully Avalanche Rated Configuration Single • Drop in Re

4.15. irfz48n.pdf Size:144K _inchange_semiconductor

IRFZ48Z
IRFZ48Z

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ48N FEATURES ·Drain Current –ID= 64A@ TC=25? ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.014?(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta

See also transistors datasheet: IRFZ44Z , IRFZ44ZL , IRFZ44ZS , IRFZ46Z , IRFZ46ZL , IRFZ46ZS , IRFZ48V , IRFZ48VS , 40673 , IRFZ48ZL , IRFZ48ZS , IRL1404 , IRL1404L , IRL1404S , IRL1404Z , IRL1404ZL , IRL1404ZS .

Search Terms:

 IRFZ48Z - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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