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2N6794JANT MOSFET (IC) Datasheet. Cross Reference Search. 2N6794JANT Equivalent

Type Designator: 2N6794JANT

Type of 2N6794JANT transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 20

Maximum drain-source voltage |Uds|, V: 500

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 1.5

Maximum junction temperature (Tj), °C: 150

Rise Time of 2N6794JANT transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 600

Maximum drain-source on-state resistance (Rds), Ohm: 3

Package: TO205AF

2N6794JANT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2N6794JANT PDF doc:

4.1. 2n6794_irff420.pdf Size:128K _international_rectifier

2N6794JANT
2N6794JANT

PD - 90429C IRFF420 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6794 HEXFET?TRANSISTORS JANTXV2N6794 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/555 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF420 500V 3.0? 1.5A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this la

4.2. 2n6794.pdf Size:23K _semelab

2N6794JANT
2N6794JANT

2N6794 SEME LAB MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET BVDSS 500V ID(cont) 1.5 RDS(on) 3.0 FEATURES ! • AVALANCHE ENERGY RATED

5.1. 2n6790.pdf Size:86K _fairchild_semi

2N6794JANT
2N6794JANT

2N6790 Data Sheet December 2001 3.5A, 200V, 0.800 Ohm, N-Channel Power Features MOSFET • 3.5A, 200V The 2N6790 is an N-Channel enhancement mode silicon • rDS(ON) = 0.800? gate power MOS field effect transistor designed for • SOA is Power Dissipation Limited applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high • Nanosecon

5.2. 2n6792_irff320.pdf Size:131K _international_rectifier

2N6794JANT
2N6794JANT

PD -90428C IRFF320 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6792 HEXFET?TRANSISTORS JANTXV2N6792 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/555 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF320 400V 1.8? 2.0A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this lat

5.3. 2n6796u_irfe130.pdf Size:145K _international_rectifier

2N6794JANT
2N6794JANT

Provisional Data Sheet No. PD - 9.1666A IRFE130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6796U HEXFET® TRANSISTOR JANTXV2N6796U [REF:MIL-PRF-19500/557] N-CHANNEL ? 100Volt, 0.18? Product Summary ?, HEXFET ? ? The leadless chip carrier (LCC) package represents Part Number BVDSS RDS(on) ID the logical next step in the continual evolution of IRFE130 100V 0.18? 8.0A surface mount te

5.4. 2n6790_irff220.pdf Size:133K _international_rectifier

2N6794JANT
2N6794JANT

PD - 90427C IRFF220 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6790 HEXFET?TRANSISTORS JANTXV2N6790 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/555 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF220 200V 0.80? 3.5A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this l

5.5. 2n6798_irff230.pdf Size:131K _international_rectifier

2N6794JANT
2N6794JANT

PD -90431C IRFF230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6798 HEXFET?TRANSISTORS JANTXV2N6798 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/557 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF230 200V 0.40? 5.5A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this la

5.6. irff1xx_irff2xx_irff3xx_irff4xx_2n678x_2n679x_2n680x.pdf Size:99K _international_rectifier

2N6794JANT
2N6794JANT



5.7. 2n6796_2n6798_2n6800_2n6802.pdf Size:66K _omnirel

2N6794JANT
2N6794JANT

2N6796, JANTX2N6796 JANTXV2N6796 2N6800, JANTX2N6800, JANTXV2N6800 2N6798, JANTX2N6798 JANTXV2N6798 2N6802, JANTX2N6802, JANTXV2N6802 JANTX, JANTXV POWER MOSFET IN TO-205 AF PACKAGE, QUALIFIED TO MIL-PRF-19500/557 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor FEATURES •Low RDS(on) •Ease of Paralleling •Qualified to MIL-PRF-19500/557 DESCRIPTION This h

5.8. 2n6796.pdf Size:18K _semelab

2N6794JANT
2N6794JANT

2N6796 MECHANICAL DATA Dimensions in mm (inches) TMOS FET TRANSISTOR N – CHANNEL FEATURES • VDSS = 100V • ID = 8A ! ? • RDSON = 0.18? TO

5.9. 2n6798.pdf Size:21K _semelab

2N6794JANT
2N6794JANT

2N6798 MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL ENHANCEMENT MODE TRANSISTOR FEATURES • V(BR)DSS = 200V • ID = 5.5A ! • RDSON = 0.40

See also transistors datasheet: 2N6792JANT , 2N6792JANTX , 2N6792JANTXV , 2N6792SM , 2N6793 , 2N6793LCC4 , 2N6793-SM , 2N6794 , IRFZ44V , 2N6794JANTX , 2N6794JANTXV , 2N6794SM , 2N6795 , 2N6795-SM , 2N6796 , 2N6796JANTX , 2N6796JANTXV .

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