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AUIRF1010EZ MOSFET (IC) Datasheet. Cross Reference Search. AUIRF1010EZ Equivalent

Type Designator: AUIRF1010EZ

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd), W: 140

Maximum Drain-Source Voltage |Vds|, V: 60

Maximum Gate-Source Voltage |Vgs|, V: 20

Maximum Drain Current |Id|, A: 84

Maximum Junction Temperature (Tj), °C:

Rise Time (tr), nS:

Drain-Source Capacitance (Cd), pF:

Maximum Drain-Source On-State Resistance (Rds), Ohm: 0.0085

Package: TO220AB

AUIRF1010EZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AUIRF1010EZ PDF doc:

5.1. auirf5210s.pdf Size:236K _international_rectifier

AUIRF1010EZ
AUIRF1010EZ

AUTOMOTIVE GRADE AUIRF5210S Features HEXFET® Power MOSFET l Advanced Planar Technology l P-Channel MOSFET D V(BR)DSS -100V l Low On-Resistance l Dynamic dV/dT Rating RDS(on) max. 60m G l 175°C Operating Temperature S ID -38A l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax D l Lead-Free, RoHS Compliant l Automotive Qualified * Desc

See also transistors datasheet: IRLU8721 , IRLU8726 , IRLU8729 , IRLU8743 , IRLZ44Z , IRLZ44ZL , IRLZ44ZS , SI4420DY , IRF3205 , AUIRF1010EZL , AUIRF1010EZS , AUIRF1010Z , AUIRF1010ZL , AUIRF1010ZS , AUIRF1018E , AUIRF1018ES , AUIRF1324 .

Search Terms:

 AUIRF1010EZ - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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