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BFT46 MOSFET. Datasheet pdf. Equivalent

Type Designator: BFT46

Type of Transistor: JFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.25 W

Maximum Drain-Source Voltage |Vds|: 25 V

Maximum Drain Current |Id|: 0.01 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 1.5 pF

Maximum Drain-Source On-State Resistance (Rds): 300 Ohm

Package: SOT23

BFT46 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BFT46 PDF doc:

1.1. bft46_cnv_2.pdf Size:47K _philips

BFT46
BFT46

DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET December 1997 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level g

1.2. bft46_cnv.pdf Size:209K _philips

BFT46
BFT46

DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET Product specification December 1997 NXP Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level general purpose 3 handbook, halfpage a

Datasheet: BFC52 , BFC61 , BFC62 , BFC63 , BFR30 , BFR31 , BFR84 , BFS28R , IRFP4227 , BS107P , BS107PT , BS108 , BS170 , BS170F , BS170P , BS250F , BS250P .

 


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