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BFT46 MOSFET (IC) Datasheet. Cross Reference Search. BFT46 Equivalent

Type Designator: BFT46

Type of Transistor: JFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd), W: 0.25

Maximum Drain-Source Voltage |Vds|, V: 25

Maximum Gate-Source Voltage |Vgs|, V:

Maximum Drain Current |Id|, A: 0.01

Maximum Junction Temperature (Tj), °C: 150

Rise Time (tr), nS:

Drain-Source Capacitance (Cd), pF: 1.5

Maximum Drain-Source On-State Resistance (Rds), Ohm: 300

Package: SOT23

BFT46 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BFT46 PDF doc:

1.1. bft46_cnv_2.pdf Size:47K _philips

BFT46
BFT46

DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET December 1997 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level g

1.2. bft46_cnv.pdf Size:209K _philips

BFT46
BFT46

DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET Product specification December 1997 NXP Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level general purpose 3 handbook, halfpage a

See also transistors datasheet: BFC52 , BFC61 , BFC62 , BFC63 , BFR30 , BFR31 , BFR84 , BFS28R , IRFP4227 , BS107P , BS107PT , BS108 , BS170 , BS170F , BS170P , BS250F , BS250P .

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