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BS108 MOSFET (IC) Datasheet. Cross Reference Search. BS108 Equivalent

Type Designator: BS108

Type of BS108 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 1

Maximum drain-source voltage |Uds|, V: 200

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 0.25

Maximum junction temperature (Tj), °C: 150

Rise Time of BS108 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 80

Maximum drain-source on-state resistance (Rds), Ohm: 5

Package: TO92

BS108 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BS108 PDF doc:

1.1. bs108rev0.pdf Size:58K _motorola

BS108
BS108

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BS108/D BS108 Logic Level TMOS N–Channel Enhancement Mode This TMOS FET is designed for high voltage, high speed ? switching applications such as line drivers, relay drivers, CMOS 200 VOLTS logic, microprocessor or TTL to high voltage interface and high N–CHANNEL TMOS voltage display drivers. POWER FET 1 DRAIN • Low Drive

1.2. bs108_cnv_2.pdf Size:49K _philips

BS108
BS108

DISCRETE SEMICONDUCTORS DATA SHEET BS108 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BS108 D-MOS transistor FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, SYMBOL PARAMETER MAX. UNIT etc. VDS drain-sour

1.3. bs108.pdf Size:54K _philips

BS108
BS108

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BS108 N-channel enhancement mode vertical D-MOS transistor Product specification 2001 May 18 Supersedes data of 1997 Jun 17 Philips Semiconductors Product specification N-channel enhancement mode BS108 vertical D-MOS transistor FEATURES PINNING - SOT54 • Direct interface to C-MOS, TTL, etc. PIN DESCRIPTION • High-speed switc

1.4. bs108.pdf Size:91K _onsemi

BS108
BS108

BS108 Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N-Channel TO-92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching 250 mAMPS applications such as line drivers, relay drivers, CMOS logic, 200 VOLTS microprocessor or TTL to high voltage interface and high voltage display drivers. RDS(on) = 8 W Features N-Channel • Low Drive Requirement, VGS = 3

See also transistors datasheet: BFC63 , BFR30 , BFR31 , BFR84 , BFS28R , BFT46 , BS107P , BS107PT , J111 , BS170 , BS170F , BS170P , BS250F , BS250P , BS270 , BSN254 , BSN254A .

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