BSS84 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: BSS84

Type of BSS84 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 0.36

Maximum drain-source voltage |Uds|, V: 50V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 0.13

Maximum junction temperature (Tj), °C: 150

Rise Time of BSS84 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 10

Package: SOT23

Equivalent transistors for BSS84

BSS84 PDF documents for downloads:

1.1. bss84rev0.pdf Size:139K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BSS84/D ? BSS84 Motorola Preferred Device Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel P–CHANNEL Field Effect Transistors ENHANCEMENT–MODE TMOS MOSFET ? 3 DRAIN 3 1 2 1 CASE 318–08, Style 21 GATE SOT–23 (TO–236AB) 2 SOURCE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain–to–Source Voltage VDSS 50 Vdc Gate–to–Source Voltage — Continuous VGS ± 20 Vdc Drain Current — Continuous @ TA = 25°C ID 100 mA Drain Current — Pulsed Drain Current (tp ? 10 µs) IDM 520 Total Power Dissipation @ TA = 25°C PD 225 mW Operating and Storage Temperature Range TJ, Tstg – 55 to 150 °C Thermal Resistance — Junction–to–Ambient R?JA 625 °C/W Maximum Lead Temperature for Soldering Purposes, for 10 seconds TL 260 °C ORDERING INFORMATION Device Reel Size Tape Width Quantity BSS84 7? 8mm embossed tape 3000 BSS84 13? 8mm embossed tape 10,000 GreenLine is a trademark of Motorola,

1.2. bss84lt1rev0x.pdf Size:116K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BSS84LT1/D ? BSS84LT1 Motorola Preferred Device Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel P–CHANNEL Field Effect Transistors ENHANCEMENT–MODE TMOS MOSFET ? 3 DRAIN 3 1 2 1 CASE 318–08, Style 21 GATE SOT–23 (TO–236AB) 2 SOURCE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain–to–Source Voltage VDSS 50 Vdc Gate–to–Source Voltage — Continuous VGS ± 20 Vdc Drain Current — Continuous @ TA = 25°C ID 100 mA Drain Current — Pulsed Drain Current (tp ? 10 µs) IDM 520 Total Power Dissipation @ TA = 25°C PD 225 mW Operating and Storage Temperature Range TJ, Tstg – 55 to 150 °C Thermal Resistance — Junction–to–Ambient R?JA 625 °C/W Maximum Lead Temperature for Soldering Purposes, for 10 seconds TL 260 °C DEVICE MARKING BSS84LT1 = PD ORDERING INFORMATION Device Reel Size Tape Width Quantity BSS84LT1 7? 8mm embossed tape 3000 BSS84LT3 13? 8mm embossed tape 10

1.3. bss84.pdf Size:122K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BSS84/D ? BSS84 Motorola Preferred Device Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel P–CHANNEL Field Effect Transistors ENHANCEMENT–MODE TMOS MOSFET ? 3 DRAIN 3 1 2 1 CASE 318–08, Style 21 GATE SOT–23 (TO–236AB) 2 SOURCE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain–to–Source Voltage VDSS 50 Vdc Gate–to–Source Voltage — Continuous VGS ± 20 Vdc Drain Current — Continuous @ TA = 25°C ID 100 mA Drain Current — Pulsed Drain Current (tp ? 10 µs) IDM 520 Total Power Dissipation @ TA = 25°C PD 225 mW Operating and Storage Temperature Range TJ, Tstg – 55 to 150 °C Thermal Resistance — Junction–to–Ambient R?JA 625 °C/W Maximum Lead Temperature for Soldering Purposes, for 10 seconds TL 260 °C ORDERING INFORMATION Device Reel Size Tape Width Quantity BSS84 7? 8mm embossed tape 3000 BSS84 13? 8mm embossed tape 10,000 GreenLine is a trademark of Motorola,

1.4. bss84lt1.pdf Size:120K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BSS84LT1/D ? BSS84LT1 Motorola Preferred Device Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel P–CHANNEL Field Effect Transistors ENHANCEMENT–MODE TMOS MOSFET ? 3 DRAIN 3 1 2 1 CASE 318–08, Style 21 GATE SOT–23 (TO–236AB) 2 SOURCE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain–to–Source Voltage VDSS 50 Vdc Gate–to–Source Voltage — Continuous VGS ± 20 Vdc Drain Current — Continuous @ TA = 25°C ID 100 mA Drain Current — Pulsed Drain Current (tp ? 10 µs) IDM 520 Total Power Dissipation @ TA = 25°C PD 225 mW Operating and Storage Temperature Range TJ, Tstg – 55 to 150 °C Thermal Resistance — Junction–to–Ambient R?JA 625 °C/W Maximum Lead Temperature for Soldering Purposes, for 10 seconds TL 260 °C DEVICE MARKING BSS84LT1 = PD ORDERING INFORMATION Device Reel Size Tape Width Quantity BSS84LT1 7? 8mm embossed tape 3000 BSS84LT3 13? 8mm embossed tape 10

1.5. bss84_2.pdf Size:74K _philips

DISCRETE SEMICONDUCTORS DATA SHEET BSS84 P-channel enhancement mode vertical D-MOS transistor 1997 Jun 18 Product specification Supersedes data of 1995 Apr 07 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification P-channel enhancement mode BSS84 vertical D-MOS transistor FEATURES PINNING - SOT23 • Low threshold voltage PIN SYMBOL DESCRIPTION • Direct interface to C-MOS, TTL, etc. 1 g gate • High-speed switching 2 s source • No secondary breakdown. 3 d drain APPLICATIONS 3 • Line current interrupter in telephone sets handbook, halfpage d • Relay, high speed and line transformer drivers. DESCRIPTION g P-channel enhancement mode vertical D-MOS transistor s in a SOT23 SMD package. 1 2 Top view MAM188 CAUTION Marking code: SP The device is supplied in an antistatic package. The gate-source input must be protected against static Fig.1 Simplified outline and symbol. discharge during transport or handling. QUICK REFEREN

1.6. bss84.pdf Size:139K _fairchild_semi

July 2002 BSS84 P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode field effect • -0.13A, -50V. RDS(ON) = 10? @ VGS = -5 V transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on- • Voltage controlled p-channel small signal switch state resistance, provide rugged and reliable • High density cell design for low RDS(ON) performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to • High saturation current 0.13A DC and can deliver current up to 0.52A. This product is particularly suited to low voltage applications requiring a low current high side switch. D D S G S G SOT-23 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage -50 V VGSS Gate-Source Voltage ±20 V ID Drai

1.7. bss84dw.pdf Size:194K _diodes

BSS84DW DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • Low On-Resistance • Case: SOT-363 • Low Gate Threshold Voltage • Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Low Input Capacitance • Moisture Sensitivity: Level 1 per J-STD-020C • Fast Switching Speed • Terminals: Solderable per MIL-STD-202, Method 208 • Lead Free/RoHS Compliant (Note 3) • Lead Free Plating (Matte Tin Finish annealed over Alloy 42 • "Green" Device (Note 5 and 6) leadframe). • Terminal Connections: See Diagram • Marking Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.006 grams (approximate) SOT-363 D2 G1 S1 S2 G2 D1 TOP VIEW TOP VIEW Internal Schematic Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS -50 V Drain-Gate Voltage (Note 1) VDGR -50 V Gate-Source Voltage Continuous VGSS ±20 V

1.8. bss84w.pdf Size:139K _diodes

BSS84W P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • Low On-Resistance • Case: SOT-323 • Low Gate Threshold Voltage • Case Material: Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 • Low Input Capacitance • Moisture Sensitivity: Level 1 per J-STD-020C • Fast Switching Speed • Terminal Connections: See Diagram • Lead Free/RoHS Compliant (Note 2) • Terminals: Solderable per MIL-STD-202, Method 208 • "Green" Device (Note 3 and 4) • Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). • Marking Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.006 grams (approximate) Drain SOT-323 D Gate G S TOP VIEW Source TOP VIEW Equivalent Circuit Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS -50 V Drain-Gate Voltage (Note 1) VDGR -50 V Gate-Source Voltage Continuou

1.9. bss84v.pdf Size:209K _diodes

BSS84V DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • Low On-Resistance • Case: SOT-563 • Low Gate Threshold Voltage • Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 • Low Input Capacitance • Moisture Sensitivity: Level 1 per J-STD-020C • Fast Switching Speed • Lead Free By Design/RoHS Compliant (Note 3) • Terminals: Finish ? Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • “Green” Device (Note 4) • Terminal Connections: See Diagram • Marking Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.006 grams (approximate) SOT-563 D2 G1 S1 S2 G2 D1 TOP VIEW TOP VIEW Internal Schematic Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage -50 V VDSS Drain-Gate Voltage (Note 1) -50 V VDGR Gate-Source Voltage Continuous V VGSS ±20 Drain Current (Not

1.10. bss8402dw.pdf Size:173K _diodes

BSS8402DW COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • Low On-Resistance • Case: SOT-363 • Low Gate Threshold Voltage • Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Low Input Capacitance • Moisture Sensitivity: Level 1 per J-STD-020D • Fast Switching Speed • Terminals: Solderable per MIL-STD-202, Method 208 • Low Input/Output Leakage • Lead Free Plating (Matte Tin Finish annealed over Alloy 42 • Complementary Pair leadframe). • Lead Free/RoHS Compliant (Note 2) • Terminal Connections: See Diagram • "Green" Device (Note 3 and 4) • Marking Information: See Page 5 • Qualified to AEC-Q101 Standards for High Reliability • Ordering Information: See Page 5 • Weight: 0.008 grams (approximate) SOT-363 D1 G2 S2 Q1 Q2 S1 G1 D2 TOP VIEW TOP VIEW Internal Schematic Maximum Ratings – Total Dev

1.11. bss84_2.pdf Size:101K _diodes

BSS84 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • Low On-Resistance • Case: SOT-23 • Low Gate Threshold Voltage • Case Material: UL Flammability Classification Rating 94V-0 • Low Input Capacitance • Moisture Sensitivity: Level 1 per J-STD-020 • Fast Switching Speed • Terminals: Solderable per MIL-STD-202, Method 208 • Low Input/Output Leakage • Lead Free Plating (Matte Tin Finish). • Lead, Halogen and Antimony Free, RoHS Compliant (Note 3) • Terminal Connections: See Diagram • "Green" Device (Note 4) • Marking Information: See Page 3 • Qualified to AEC-Q101 Standards for High Reliability • Ordering Information: See Page 3 • Weight: 0.008 grams (approximate) Drain SOT-23 D Gate G S Source Top View Equivalent Circuit Top View Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS -50 V Drain-Gate Voltage RGS ? 20K? VDGR -50 V Gate-Source Voltage Continuous VGSS

1.12. bss84p.pdf Size:97K _infineon

Preliminary data BSS 84 P SIPMOS? Small-Signal-Transistor Features Product Summary P-Channel Drain source voltage VDS -60 V Enhancement mode Drain-source on-state resistance RDS(on) 8 Avalanche rated Continuous drain current ID -0.17 A Logic Level 3 dv/dt rated 2 1 VPS05161 Type Package Ordering Code Marking Pin 1 PIN 2 PIN 3 BSS 84 P SOT-23 Q67041-S1417 YBs G S D Maximum Ratings,at TA = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current ID A TA = 25 °C -0.17 TA = 70 °C -0.14 Pulsed drain current ID puls -0.68 TA = 25 °C Avalanche energy, single pulse EAS 2.6 mJ ID = -0.17 A , VDD = -25 V, RGS = 25 Avalanche energy, periodic limited by Tjmax EAR 0.036 Reverse diode dv/dt dv/dt 6 kV/µs IS = -0.17 A, VDS = -48 V, di/dt = 200 A/µs, Tjmax = 150 °C Gate source voltage VGS ±20 V Power dissipation Ptot 0.36 W TA = 25 °C Operating and storage temperature Tj , Tstg -55...+150 °C IEC climatic category; DIN IEC 68-1 55

1.13. bss84p_rev2.5.pdf Size:702K _infineon

BSS 84 P SIPMOS? Small-Signal-Transistor Product Summary Feature VDS -60 V P-Channel RDS(on) 8 Enhancement mode ID -0.17 A Logic Level PG-SOT-23 Avalanche rated 3 dv/dt rated 2 1 VPS05161 Tape and Reel Type Package Marking Drain BSS 84 P PG-SOT-23 L6327:3000pcs/r. YBs pin 3 Gate BSS 84 P PG-SOT-23 L6433:10000pcs/r. YBs pin1 Source pin 2 Maximum Ratings, at TA = 25 °C, unless otherwise specified Parameter Symbol Value Unit A Continuous drain current ID TA=25°C -0.17 TA=70°C -0.14 -0.68 Pulsed drain current ID puls TA=25°C 2.6 mJ Avalanche energy, single pulse EAS ID=-0.17 A , V =-25V, R =25 DD GS EAR 0.036 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt dv/dt -6 kV/µs IS=-0.17A, VDS=-48V, di/dt=-200A/µs, Tjmax=150°C Gate source voltage VGS V ±20 Power dissipation Ptot 0.36 W TA=25°C °C Operating and storage temperature Tj , Tstg -55... +150 IEC climatic category; DIN IEC 68-1 55/150/56 Rev 2.5 Page 1 2011-06-01

1.14. bss84pw_rev1.4.pdf Size:120K _infineon

BSS84PW SIPMOS? Small-Signal-Transistor Features Product Summary P-Channel Drain source voltage VDS -60 V Enhancement mode Drain-source on-state resistance 8 RDS(on) Avalanche rated Continuous drain current -0.15 A ID Logic Level 3 dv/dt rated 2 • Qualified according to AEC Q101 1 VSO05561 • Halogen-free according to IEC61249-2-21 Type Package Tape and Reel Marking Pin 1 PIN 2 PIN 3 BSS84PW PG-SOT-323 L6327:3000pcs/r. YBs G S D Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current -0.15 A ID TA = 25 °C Pulsed drain current -0.6 ID puls TA = 25 °C Avalanche energy, single pulse 2.61 mJ EAS ID = -0.15 A , VDD = -25 V, RGS = 25 EAR 0.03 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt dv/dt 6 kV/µs IS = -0.15 A, VDS = -48 V, di/dt = 200 A/µs, Tjmax = 150 °C Gate source voltage VGS ±20 V Power dissipation Ptot 0.3 W TA = 25 °C Operating and storage temperature -55...+150 °C

1.15. bss84lt1-d.pdf Size:67K _onsemi

BSS84LT1 Power MOSFET 130 mA, 50 V P-Channel SOT-23 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power http://onsemi.com management circuitry. Typical applications are DC-DC converters, load switching, power management in portable and battery-powered products such as computers, printers, cellular and cordless telephones. 130 mA, 50 V RDS(on) = 10 W Features • Energy Efficient P-Channel • Miniature SOT-23 Surface Mount Package Saves Board Space 3 • Pb-Free Package is Available 1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain-to-Source Voltage VDSS 50 Vdc 2 Gate-to-Source Voltage - Continuous VGS ± 20 Vdc Drain Current mA 3 - Continuous @ TA = 25°C ID 130 SOT-23 - Pulsed Drain Current (tp ? 10 ms) IDM 520 CASE 318 1 STYLE 21 Total Power Dissipation @ TA = 25°C PD 225 mW 2 Operating and Storage Temperature TJ, Tstg - 55 to °C Range 150 Thermal Resista

1.16. bss84.pdf Size:297K _gsme

? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. BSS84 SOT-23 ??????(SOT-23 Field Effect Transistors) P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement-Mode MOS FETs P MOS P MOS P?????MOS???? P MOS MAXIMUM RATINGS MAXIMUM RATINGS ¦MAXIMUM RATINGS ????? MAXIMUM RATINGS Characteristic ???? Symbol ?? Max ??? Unit ?? Drain-Source Voltage BVDSS -50 V ??-???? Gate- Source Voltage VGS +20 V ??-???? Drain Current (continuous) IDR -130 mA ????-?? Drain Current (pulsed) IDRM -520 mA ????-?? THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS ¦THERMAL CHARACTERISTICS ??? THERMAL CHARACTERISTICS Symbol Max Unit Characteristic ?? ?? ??? ?? PD Total Device Dissipation ????? 200 mW TA=25?????? 25? Derate above25? ?? 25??? 1.8 mW/? R Thermal R

1.17. bss84w.pdf Size:793K _wietron

BSS84W P-Channel POWER MOSFET P b Lead(Pb)-Free 3 1 2 Description: * These miniature surface mount MOSFETs reduce power loss SOT-323(SC-70) conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, load switching, power management in portable and battery–powered 3 DRAIN products such as computers, printers, cellular and cordless telephones. Features: * Simple Drive Requirement 1 * Small Package Outline GATE 2 SOURCE Maximum Ratings (TA=25°C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDDS -50 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID -130 mA VGS = (TA=25°C) IDM mA 520 Pulsed Drain Current (tp <=10µS) Total Power Dissipation (TA PD 225 mW =25°C) R? JA 556 °C/W Thermal Resistance – Junction–to–Ambient Operating Junction Temperature Range TJ °C -55 to +150 Storage Temperature Range °C Tstg -55 to +150 Maximum Lead

1.18. bss84.pdf Size:131K _wietron

BSS84 Small Signal MOSFET P-Channel 3 DRAIN SOT-23 Features: 3 1 *Low On-Resistance : 10 GATE 1 *Low Input Capacitance: 30PF 2 *Low Out put Capacitance : 10PF 2 SOURCE *Low Threshole : 2.0V *Fast Switching Speed : 2.5ns Application: * DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Management in Portable and Battery etc. Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unite 50 Drain-Source Voltage VDSS V + Gate-Source Voltage VGS V -20 Continuous Drain Current (TA=25 C) ID 130 mA 520 Pulsed Drain Current(tp 10us) IDM mA 225 Power Dissipation (TA=25 C) PD mW 556 Maximax Junction-to-Ambient R C/W JA Operating Junction and Storage TJ, Tstg -55 to 150 C Temperature Range Device Marking BSS84=PD WEITRON http://www.weitron.com.tw BSS84 Electrical Characteristics (TA=25 C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit Static(1) Drain-Source Breakdown Voltage V V(BR)DSS -

See also transistors datasheet: BSR56 , BSR57 , BSR58 , BSS100 , BSS110 , BSS123 , BSS123A , BSS138 , IRFP240 , BUK100-50DL , BUK100-50GS , BUK101-50DL , BUK101-50GL , BUK101-50GS , BUK102-50DL , BUK102-50GL , BUK102-50GS .

Keywords