2SK2719 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2SK2719

Type of 2SK2719 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 125

Maximum drain-source voltage |Uds|, V: 900V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 3

Maximum junction temperature (Tj), °C:

Rise Time of 2SK2719 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 4.3

Package: SC65/TO3P(N)

Equivalent transistors for 2SK2719

2SK2719 PDF documents for downloads:

1.1. 2sk2719.pdf Size:325K _toshiba

4.1. 2sk2717.pdf Size:409K _toshiba

2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2717 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 2.3 ? (typ.) (ON) High forward transfer admittance : |Y | = 4.4 S (typ.) fs Low leakage current : I = 100 µA (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS D Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 k?) VDGR 900 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 5 Drain current A Pulse (Note 1) IDP 15 Drain power dissipation (Tc = 25°C) PD 45 W Single pulse avalanche energy EAS 595 mJ (Note 2) JEDEC ? Avalanche current IAR 5 A Repetitive avalanche energy (Note 3) EAR 4.5 mJ JEITA SC-67 Channel temperature Tch 150 °C TOSHIBA 2-10R1B Storage temperature range Tstg -55~150 °C Weight: 1.9 g (typ.) Thermal Characteristics Characteristics Symb

4.2. 2sk2718.pdf Size:411K _toshiba

2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2718 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 5.6 ? (typ.) (ON) High forward transfer admittance : |Y | = 2.0 S (typ.) fs Low leakage current : I = 100 µA (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS D Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 k?) VDGR 900 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 2.5 A Drain current Pulse (Note 1) IDP 7.5 A Drain power dissipation (Tc = 25°C) PD 40 W Single pulse avalanche energy EAS 216 mJ JEDEC ? (Note 2) Avalanche current IAR 2.5 A JEITA SC-67 Repetitive avalanche energy (Note 3) EAR 4.0 mJ TOSHIBA 2-10R1B Channel temperature Tch 150 °C Weight: 1.9 g (typ.) Storage temperature range Tstg -55~150 °C Thermal Characteristics Characteristi

4.3. 2sk2711.pdf Size:139K _rohm

Transistors Switching (250V, 16A) 2SK2711 FFeatures FExternal dimensions (Units: mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 130 Transistors 2SK2711 FElectrical characteristics (Ta = 25_C) FElectrical characteristic curves 131 Transistors 2SK2711 132 Transistors 2SK2711 FSwitching characteristics Fmeasurement circuit 133

4.4. 2sk2714_1-5.pdf Size:137K _rohm

4.5. 2sk2711_1-5.pdf Size:134K _rohm

4.6. 2sk2713.pdf Size:143K _rohm

Transistors Switching (450V, 5A) 2SK2713 FFeatures FExternal dimensions (Units: mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 134 Transistors 2SK2713 FElectrical characteristics (Ta = 25_C) FElectrical characteristic curves 135 Transistors 2SK2713 136 Transistors 2SK2713 FSwitching characteristics Fmeasurement circuit 137

4.7. 2sk2715.pdf Size:138K _rohm

Transistors Switching (500V, 2A) 2SK2715 FFeatures FExternal dimensions (Units: mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 142 Transistors 2SK2715 FElectrical characteristics (Ta = 25_C) FElectrical characteristic curves 143 Transistors 2SK2715 144 Transistors 2SK2715 FSwitching characteristics Fmeasurement circuit 145

4.8. 2sk2714.pdf Size:144K _rohm

Transistors Switching (500V, 10A) 2SK2714 FFeatures FExternal dimensions (Units: mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 138 Transistors 2SK2714 FElectrical characteristics (Ta = 25_C) FElectrical characteristic curves 139 Transistors 2SK2714 140 Transistors 2SK2714 FSwitching characteristics Fmeasurement circuit 141

4.9. 2sk2713_1-5.pdf Size:137K _rohm

4.10. 2sk2715_1-5.pdf Size:133K _rohm

See also transistors datasheet: 2SK2037 , 2SK2601 , 2SK2602 , 2SK2606 , 2SK2607 , 2SK2613 , 2SK2615 , 2SK2699 , BF966 , 2SK2823 , 2SK2824 , 2SK2825 , 2SK2847 , 2SK2865 , 2SK2917 , 2SK2953 , 2SK2962 .

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