SSM3J01F MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: SSM3J01F

Type of SSM3J01F transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 30V

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 0.7

Maximum junction temperature (Tj), °C:

Rise Time of SSM3J01F transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.4

Package: SOT346/SC59/SMini

Equivalent transistors for SSM3J01F

SSM3J01F PDF documents for downloads:

1.1. ssm3j01f_071101.pdf Size:312K _toshiba

SSM3J01F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01F High Speed Switching Applications Unit: mm • Small package • Low on resistance : Ron = 0.4 ? (max) (VGS = -4 V) : Ron = 0.6 ? (max) (VGS = -2.5 V) • Low gate threshold voltage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS -30 V Gate-source voltage VGSS ±10 V DC ID -700 Drain current mA Pulse IDP -1400 Drain power dissipation (Ta = 25°C) PD 200 mW Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C JEDEC TO-236MOD JEITA SC-59 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-3F1F temperature, etc.) may cause this product to decrease in the Weight: 0.012 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum rat

3.1. ssm3j01t_071101.pdf Size:207K _toshiba

SSM3J01T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01T Power Management Switch Unit: mm High Speed Switching Applications • Small Package • Low on Resistance: Ron = 0.4 ? (max) (@VGS = -4 V) : Ron = 0.6 ? (max) (@VGS = -2.5 V) • Low Gate Threshold Voltage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -30 V Gate-Source voltage VGSS ±10 V DC ID -1.7 Drain current A IDP Pulse -3.4 (Note 2) PD Drain power dissipation (Ta = 25°C) 1250 mW (Note 1) JEDEC ? Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C JEITA ? Note: Using continuously under heavy loads (e.g. the application of TOSHIBA 2-3S1A high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 10 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.)

4.1. ssm3j02f_071101.pdf Size:319K _toshiba

SSM3J02F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J02F Power Management Switch Unit: mm High Speed Switching Applications • Small package • Low on resistance : Ron = 0.5 ? (max) (@VGS = -4 V) : Ron = 0.7 ? (max) (@VGS = -2.5 V) • Low gate threshold voltage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS -30 V Gate-source voltage VGSS ±10 V DC ID -600 Drain current mA Pulse IDP -1200 Drain power dissipation (Ta = 25°C) PD 200 mW JEDEC TO-236MOD Channel temperature Tch 150 °C JEITA SC-59 Storage temperature range Tstg -55~150 °C TOSHIBA 2-3F1F Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.012 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within

4.2. ssm3j09fu_071101.pdf Size:165K _toshiba

SSM3J09FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J09FU Management Switch Unit: mm High Speed Switching Applications • Small package • Low on resistance: Ron = 2.7 ? (max) (@VGS = -10 V) : Ron = 4.2 ? (max) (@VGS = -4 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -30 V Gate-Source voltage VGSS ±20 V DC ID -200 Drain current mA Pulse IDP -400 Drain power dissipation (Ta = 25°C) PD (Note 1) 150 mW Channel temperature Tch 150 °C JEDEC ? Storage temperature Tstg -55~150 °C JEITA SC-70 Note: Using continuously under heavy loads (e.g. the application of TOSHIBA 2-2E1E high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 0.006 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please

4.3. ssm3j05fu_071101.pdf Size:290K _toshiba

SSM3J05FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J05FU Power Management Switch High Speed Switching Applications Unit: mm • Small package • Low on resistance : Ron = 3.3 ? (max) (@VGS = -4 V) : Ron = 4.0 ? (max) (@VGS = -2.5 V) • Low gate threshold voltage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS -20 V Gate-source voltage VGSS ±12 V DC ID -200 Drain current mA Pulse IDP -400 PD Drain power dissipation (Ta = 25°C) 150 mW (Note 1) Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEDEC ? operating temperature/current/voltage, etc.) are within the JEITA SC-70 absolute maximum ratings.

4.4. ssm3j02t_071101.pdf Size:184K _toshiba

SSM3J02T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J02T Power Management Switch Unit: mm High Speed Switching Applications • Component package suitable for high-density mounting • Small Package • Low ON Resistance : Ron = 0.5 ? (max) (@VGS = -4 V) : Ron = 0.7 ? (max) (@VGS = -2.5 V) • Low-voltage operation possible Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -30 V Gate-Source voltage VGSS ±10 V DC ID -1.5 Drain current A IDP Pulse -3.0 (Note 2) PD JEDEC ? Drain power dissipation (Ta = 25°C) 1250 mW (Note 1) JEITA ? Channel temperature Tch 150 °C Storage temperature range Tstg -55 to 150 °C TOSHIBA 2-3S1A Weight: 10 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

See also transistors datasheet: HN1K02FU , HN1K03FU , HN1K04FU , HN1K05FU , HN1K06FU , HN1L02FU , HN1L03FU , HN4K03JU , IRF510 , SSM3J01T , SSM3J02F , SSM3J02T , SSM3J05FU , SSM3J09FU , SSM3J108TU , SSM3J109TU , SSM3J110TU .

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