SSM3K09FU MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: SSM3K09FU

Type of SSM3K09FU transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 30V

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 0.4

Maximum junction temperature (Tj), °C:

Rise Time of SSM3K09FU transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 1.2

Package: SOT323/SC70/USM

Equivalent transistors for SSM3K09FU

SSM3K09FU PDF documents for downloads:

1.1. ssm3k09fu_071101.pdf Size:210K _toshiba

SSM3K09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K09FU High Speed Switching Applications Unit: mm • Small package • Low on resistance : Ron = 0.7 ? (max) (@VGS = 10 V) : Ron = 1.2 ? (max) (@VGS = 4 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS ±20 V DC ID 400 Drain current mA Pulse IDP 800 Drain power dissipation (Ta = 25°C) PD (Note 1) 150 mW Channel temperature Tch 150 °C Storage temperature Tstg -55~150 °C JEDEC ? JEITA SC-70 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-2E1E temperature, etc.) may cause this product to decrease in the Weight: 0.006 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriat

4.1. ssm3k02f_071101.pdf Size:302K _toshiba

SSM3K02F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F High Speed Switching Applications Unit: mm • Small package • Low on resistance: Ron = 200 m? (max) (VGS = 4 V) : Ron = 250 m? (max) (VGS = 2.5 V) • Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS 30 V Gate-source voltage VGSS ±10 V DC ID 1.0 Drain current A Pulse IDP 2.0 Drain power dissipation PD 200 mW Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C JEDEC TO-236MOD Note: Using continuously under heavy loads (e.g. the application of JEITA SC-59 high temperature/current/voltage and the significant change in TOSHIBA 2-3F1F temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 0.012 g (typ.) operating temperature/current/voltage, etc.) are within the

4.2. ssm3k01f_071101.pdf Size:305K _toshiba

SSM3K01F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01F High Speed Switching Applications Unit: mm • Small package • Low on resistance : Ron = 120 m? (max) (VGS = 4 V) : Ron = 150 m? (max) (VGS = 2.5 V) • Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS 30 V Gate-source voltage VGSS ±10 V DC ID 1.3 Drain current A Pulse IDP 2.6 Drain power dissipation PD 200 mW Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C JEDEC TO-236MOD Note: Using continuously under heavy loads (e.g. the application of JEITA SC-59 high temperature/current/voltage and the significant change in TOSHIBA 2-3F1F temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 0.012 g (typ.) operating temperature/current/voltage, etc.) are within the

4.3. ssm3k01t_071101.pdf Size:188K _toshiba

SSM3K01T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T High Speed Switching Applications Unit: mm • Small Package • Low on Resistance: Ron = 120 m? (max) (@VGS = 4 V) : Ron = 150 m? (max) (@VGS = 2.5 V) • Low Gate Threshold Voltage: Vth = 0.6~1.1 V (@VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS ±10 V DC ID 3.2 Drain current A IDP Pulse 6.4 (Note 2) PD Drain power dissipation (Ta = 25°C) 1250 mW (Note 1) Channel temperature Tch 150 °C JEDEC ? Storage temperature range Tstg -55~150 °C JEITA ? Note: Using continuously under heavy loads (e.g. the application of TOSHIBA 2-3S1A high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 10 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/curre

4.4. ssm3k05fu_071101.pdf Size:312K _toshiba

SSM3K05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K05FU High Speed Switching Applications • Small package Unit: mm • Low on resistance : Ron = 0.8 ? max (@VGS = 4 V) : Ron = 1.2 ? max (@VGS = 2.5 V) • Low gate threshold voltage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source voltage VGSS ±12 V DC ID 400 Drain current mA Pulse IDP 800 PD Drain power dissipation (Ta = 25°C) 150 mW (Note 1) Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEDEC ? absolute maximum ratings. Please design the appropriate reliability upon re

4.5. ssm3k02t_071101.pdf Size:199K _toshiba

SSM3K02T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02T High Speed Switching Applications Unit: mm • Small package • Low on resistance: Ron = 200 m? (max) (VGS = 4 V) : Ron = 250 m? (max) (VGS = 2.5 V) • Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS 30 V Gate-source voltage VGSS ±10 V DC ID 2.5 Drain current A Pulse IDP 5.0 PD Drain power dissipation (Ta = 25°C) 1250 mW (Note 1) JEDEC ? Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C JEITA ? Note: Using continuously under heavy loads (e.g. the application of TOSHIBA 2-3S1A high temperature/current/voltage and the significant change in Weight: 0.01 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.)

See also transistors datasheet: SSM3J36TU , SSM3J46CTB , SSM3J56MFV , SSM3K01F , SSM3K01T , SSM3K02F , SSM3K02T , SSM3K05FU , IRF450 , SSM3K101TU , SSM3K102TU , SSM3K104TU , SSM3K105TU , SSM3K106TU , SSM3K107TU , SSM3K116TU , SSM3K119TU .

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