SSM3K116TU MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: SSM3K116TU

Type of SSM3K116TU transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 30V

Maximum gate-source voltage |Ugs|, V: 12

Maximum drain current |Id|, A: 2.2

Maximum junction temperature (Tj), °C:

Rise Time of SSM3K116TU transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.1

Package: UFM

Equivalent transistors for SSM3K116TU

SSM3K116TU PDF documents for downloads:

1.1. ssm3k116tu.pdf Size:249K _toshiba

SSM3K116TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K116TU High Speed Switching Applications Unit: mm • 2.5V drive 2.1±0.1 • Low on-resistance: Ron = 135m? (max) (@VGS = 2.5 V) 1.7±0.1 Ron = 100m? (max) (@VGS = 4.5 V) • Lead(Pb)-free 1 Maximum Ratings (Ta = 25°C) 2 3 Characteristic Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS ± 12 V DC ID 2.2 Drain current A Pulse IDP 4.4 1 :Gate PD (Note1) 800 Drain power dissipation mW 2 :Source PD (Note2) 500 3 :Drain Channel temperature Tch 150 °C UFM Storage temperature range Tstg -55~150 °C JEDEC ? Note1: Mounted on ceramic board. JEITA ? (25.4 mm ? 25.4 mm ? 0.8 mm, Cu Pad: 645 mm2 ) Note2: Mounted on FR4 board. TOSHIBA 2-2U1A (25.4 mm ? 25.4 mm ? 1.6 mm, Cu Pad: 645 mm2 ) Weight: 6.6 mg (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min Typ. Max Unit V (BR) DSS ID = 1 mA, VGS = 0 30 ? ? D

3.1. ssm3k119tu.pdf Size:224K _toshiba

SSM3K119TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K119TU Power Management Switch Applications High Speed Switching Applications Unit: mm • • 1.8 V drive 2.1±0.1 • Low ON-resistance: Ron = 134 m? (max) (@VGS = 1.8V) 1.7±0.1 Ron = 90 m? (max) (@VGS = 2.5V) Ron = 74 m? (max) (@VGS = 4.0V) 1 • Lead(Pb)-free 2 3 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain–source voltage VDS 30 V Gate–source voltage VGSS ± 12 V DC ID 2.5 1 :Gate Drain current A Pulse IDP 5.0 2 :Source 3 :Drain PD (Note 1) 800 Drain power dissipation mW UFM PD (Note 2) 500 Channel temperature Tch 150 °C JEDEC ? Storage temperature range Tstg -55~150 °C JEITA ? Note 1: Mounted on a ceramic board. TOSHIBA 2-2U1A (25.4 mm ? 25.4 mm ? 0.8 t, Cu Pad: 645 mm2 ) Weight: 6.6 mg (typ.) Note 2: Mounted on an FR4 board. (25.4 mm ? 25.4 mm ? 1.6 t, Cu Pad: 645 mm2 ) Electrical Characteristics (Ta = 25°C) Cha

4.1. ssm3k16fu_071101.pdf Size:149K _toshiba

SSM3K16FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FU High Speed Switching Applications Analog Switching Applications Unit: mm • Suitable for high-density mounting due to compact package • Low on resistance: Ron = 3.0 ? (max) (@VGS = 4 V) : Ron = 4.0 ? (max) (@VGS = 2.5 V) : Ron = 15 ? (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS ±10 V DC ID 100 Drain current mA Pulse IDP 200 Drain power dissipation (Ta = 25°C) PD(Note 1) 150 mW Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JED

4.2. ssm3k122tu_071101.pdf Size:145K _toshiba

SSM3K122TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K122TU Power Management Switch Applications High-Speed Switching Applications • 1.5 V drive Unit: mm Unit: mm • Low ON-resistance: Ron = 304 m? (max) (@VGS = 1.5 V) 2.1±0.1 Ron = 211 m? (max) (@VGS = 1.8 V) 1.7±0.1 Ron = 161 m? (max) (@VGS = 2.5 V) Ron = 123 m? (max) (@VGS = 4.0 V) 1 Absolute Maximum Ratings (Ta = 25°C) 3 2 Characteristics Symbol Rating Unit Drain-Source voltage VDSS 20 V Gate-Source voltage VGSS ± 10 V DC ID 2.0 Drain current A Pulse IDP 4.0 PD (Note 1) 800 Drain power dissipation mW PD (Note 2) 500 Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C 1: Gate Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in 2: Source temperature, etc.) may cause this product to decrease in the UFM 3: Drain reliability significantly even if the operating

4.3. ssm3k123tu_071101.pdf Size:165K _toshiba

SSM3K123TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K123TU Power Management Switch Applications High-Speed Switching Applications Unit: mm Unit: mm • 1.5 V drive • Low ON-resistance: Ron = 66 m? (max) (@VGS = 1.5 V) Ron = 43 m? (max) (@VGS = 1.8 V) 2.1±0.1 Ron = 32 m? (max) (@VGS = 2.5 V) 1.7±0.1 Ron = 28 m? (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25°C) 1 Characteristics Symbol Rating Unit 3 2 Drain-Source voltage VDSS 20 V Gate-Source voltage VGSS ± 10 V DC ID 4.2 Drain current A Pulse IDP 8.4 PD (Note 1) 800 Drain power dissipation mW PD (Note 2) 500 Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C 1: Gate 2: Source Note: Using continuously under heavy loads (e.g. the application of UFM high temperature/current/voltage and the significant change in 3: Drain temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating co

4.4. ssm3k15fs_071101.pdf Size:171K _toshiba

SSM3K15FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FS High Speed Switching Applications Unit: mm Analog Switching Applications • Compact package suitable for high-density mounting • Low ON-resistance : Ron = 4.0 ? (max) (@VGS = 4 V) : Ron = 7.0 ? (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS ±20 V DC ID 100 Drain current mA Pulse IDP 200 Drain power dissipation (Ta = 25°C) PD 100 mW Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C JEDEC ? JEITA ? Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-2H1B temperature, etc.) may cause this product to decrease in the Weight: 2.4 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within t

4.5. ssm3k124tu_071101.pdf Size:153K _toshiba

SSM3K124TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K124TU High Speed Switching Applications Unit: mm • 4 V drive • Low ON-resistance: Ron = 120 m? (max) (@VGS = 4V) 2.1±0.1 Ron = 83 m? (max) (@VGS = 10V) 1.7±0.1 Absolute Maximum Ratings (Ta = 25°C) 1 Characteristic Symbol Rating Unit 3 2 Drain–source voltage VDS 30 V Gate–source voltage VGSS ± 20 V DC ID 2.4 Drain current A Pulse IDP 4.8 PD (Note 1) 800 Drain power dissipation mW PD (Note 2) 500 1: Gate Channel temperature Tch 150 °C 2: Source Storage temperature range Tstg -55~150 °C 3: Drain Note: Using continuously under heavy loads (e.g. the application of UFM high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEDEC ? operating temperature/current/voltage, etc.) are within the JEITA ? absolute maximum ratings.

4.6. ssm3k15fs.pdf Size:139K _toshiba

SSM3K15FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FS High Speed Switching Applications Unit: mm Analog Switching Applications • Compact package suitable for high-density mounting • Low ON-resistance : R = 4.0 ? (max) (@V = 4 V) on GS : R = 7.0 ? (max) (@V = 2.5 V) on GS Maximum Ratings (Ta = = 25°C) = = Characteristic Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS ±20 V DC ID 100 Drain current mA Pulse IDP 200 Drain power dissipation (Ta 25°C) PD 100 mW Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C JEDEC ? JEITA ? TOSHIBA 2-2H1B Marking Equivalent Circuit Weight: 2.4 mg (typ.) 3 3 D P 1 2 12 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come

4.7. ssm3k15act_101129.pdf Size:209K _toshiba

SSM3K15ACT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15ACT Load Switching Applications Unit: mm • 2.5 V drive • Low ON-resistance: RDS(ON) = 3.6 ? (max) (@VGS = 4 V) RDS(ON) = 6.0 ? (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDSS 30 V Gate-Source voltage VGSS ± 20 V DC ID 100 Drain current mA Pulse IDP 400 Power dissipation PD(Note 1) 100 mW Channel temperature Tch 150 °C Storage temperature range Tstg -55 to 150 °C CST3 Note: Using continuously under heavy loads (e.g. the application of JEDEC ? high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEITA ? reliability significantly even if the operating conditions (i.e. TOSHIBA 2-1J1B operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Weight: 0.75 mg (typ.) Please design the ap

4.8. ssm3k16fv_071101.pdf Size:88K _toshiba

SSM3K16FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FV High Speed Switching Applications nit: mm Analog Switch Applications 1.2±0.05 • Suitable for high-density mounting due to compact package 0.8±0.05 • Low on-resistance : Ron = 3.0 ? (max) (@VGS = 4 V) : Ron = 4.0 ? (max) (@VGS = 2.5 V) : Ron = 15 ? (max) (@VGS = 1.5 V) 1 Absolute Maximum Ratings (Ta = 25°C) 3 Characteristics Symbol Rating Unit 2 VDS 20 V Drain-Source voltage VGSS ±10 V Gate-Source voltage DC ID 100 Drain current mA Pulse IDP 200 Drain power dissipation (Ta = 25°C) PD (Note 1) 150 mW 1.Gate Channel temperature Tch 150 °C 2.Source Storage temperature Tstg -55~150 °C VESM 3.Drain Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC - temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e

4.9. ssm3k17fu_071101.pdf Size:170K _toshiba

SSM3K17FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K17FU High Speed Switching Applications Unit: mm Analog Switch Applications • Suitable for high-density mounting due to compact package • High drain-source voltage • High speed switching Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit VDS 50 V Drain-Source voltage VGSS ±7 V Gate-Source voltage DC ID 100 Drain current mA Pulse IDP 200 PD(Note 1) 150 mW Drain power dissipation (Ta = 25°C) Tch 150 °C Channel temperature Tstg -55~150 °C Storage temperature range JEDEC ? Note: Using continuously under heavy loads (e.g. the application of JEITA SC-70 high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the TOSHIBA 2-2E1E reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the Weight: 6 mg (typ.) absolute

4.10. ssm3k15amfv_101129.pdf Size:203K _toshiba

SSM3K15AMFV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15AMFV Load Switching Applications Unit: mm • 2.5 V drive • Low ON-resistance: RDS(ON) = 3.6 ? (max) (@VGS = 4 V) RDS(ON) = 6.0 ? (max) (@VGS = 2.5 V) 1.2±0.05 0.8±0.05 Absolute Maximum Ratings (Ta = 25°C) 1 Characteristics Symbol Rating Unit 3 Drain-Source voltage VDSS 30 V 2 Gate-Source voltage VGSS ± 20 V DC ID 100 Drain current mA Pulse IDP 400 Drain dissipation PD(Note 1) 150 mW 1.Gate Channel temperature Tch 150 °C 2.Source VESM Storage temperature range Tstg -55 to 150 °C 3.Drain Note: Using continuously under heavy loads (e.g. the application of JEDEC ? high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEITA ? reliability significantly even if the operating conditions (i.e. TOSHIBA 2-1L1B operating temperature/current/voltage, etc.) are within the absolute ma

4.11. ssm3k127tu_071113.pdf Size:191K _toshiba

SSM3K127TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K127TU 0 Power Management Switch Applications 0 High-Speed Switching Applications Unit: mm 2.1±0.1 1.7±0.1 • 1.8V drive • Low ON-resistance: Ron = 286m? (max) (@VGS = 1.8V) : Ron = 167m? (max) (@VGS = 2.5V) 1 : Ron = 123m? (max) (@VGS = 4.0V) 3 2 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage VDSS 30 V Gate-Source voltage VGSS ±12 V 1. Gate DC ID 2.0 2. Souce Drain current A Pulse IDP 4.0 3. Drain UFM PD (Note 1) 800 Drain power dissipation mW PD (Note 2) 500 JEDEC ? Channel temperature Tch 150 °C JEITA ? Storage temperature range Tstg -55 to 150 °C TOSHIBA 2-2U1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 6.6mg (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

4.12. ssm3k104tu_071101.pdf Size:148K _toshiba

SSM3K104TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K104TU Power Management Switch Applications High-Speed Switching Applications Unit: mm Unit: mm • 1.8 V drive • Low ON-resistance: Ron = 110 m? (max) (@VGS = 1.8 V) 2.1±0.1 Ron = 74 m? (max) (@VGS = 2.5 V) 1.7±0.1 Ron = 56 m? (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25°C) 1 Characteristics Symbol Rating Unit 3 2 Drain-Source voltage VDS 20 V Gate-Source voltage VGSS ± 12 V DC ID 3.0 Drain current A Pulse IDP 6.0 PD (Note 1) 800 Drain power dissipation mW PD (Note 2) 500 Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C 1: Gate 2: Source Note: Using continuously under heavy loads (e.g. the application of UFM high temperature/current/voltage and the significant change in 3: Drain temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temper

4.13. ssm3k105tu.pdf Size:350K _toshiba

SSM3K105TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K105TU High Speed Switching Applications Unit: mm • 4V drive 2.1±0.1 • Low on-resistance: Ron = 480m? (max) (@VGS = 3.3V) 1.7±0.1 Ron = 200m? (max) (@VGS = 4V) Ron = 110m? (max) (@VGS = 10V) • Lead(Pb)-free 1 2 3 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS ± 20 V DC ID 2.1 Drain current A 1 :Gate Pulse IDP 4.2 2 :Source PD (Note1) 800 Drain power dissipation mW 3 :Drain PD (Note2) 500 UFM Channel temperature Tch 150 °C JEDEC ? Storage temperature range Tstg -55~150 °C JEITA ? Note1: Mounted on ceramic board. (25.4 mm ? 25.4 mm ? 0.8 mm, Cu Pad: 645 mm2 ) TOSHIBA 2-2U1A Note2: Mounted on FR4 board. Weight: 6.6 mg (typ.) (25.4 mm ? 25.4 mm ? 1.6 mm, Cu Pad: 645 mm2 ) Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min Typ. Max Unit Drain-Source brea

4.14. ssm3k16fs_071101.pdf Size:148K _toshiba

SSM3K16FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FS High Speed Switching Applications Unit: mm Analog Switch Applications • Suitable for high-density mounting due to compact package • Low on resistance: Ron = 3.0 ? (max) (@VGS = 4 V) : Ron = 4.0 ? (max) (@VGS = 2.5 V) : Ron = 15 ? (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS ±10 V DC ID 100 Drain current mA Pulse IDP 200 Drain power dissipation (Ta = 25°C) PD 100 mW Channel temperature Tch 150 °C JEDEC ? Storage temperature range Tstg -55~150 °C JEITA ? TOSHIBA 2-2H1B Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 2.4 mg (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temper

4.15. ssm3k14t_071101.pdf Size:219K _toshiba

SSM3K14T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) SSM3K14T DC-DC Converter Unit: mm High Speed Switching Applications • Small Package • Low ON-resistance: Ron = 39 m? (max) (@VGS = 10 V) : Ron = 57 m? (max) (@VGS = 4.5 V) • High speed: ton = 24 ns (typ.) : toff = 19 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS ±20 V DC ID 4.0 Drain current A Pulse IDP (Note 2) 8.0 PD (Note 1) 0.7 Drain power dissipation (Ta = 25°C) W t = 10 s 1.25 Channel temperature Tch 150 °C JEDEC ? Storage temperature range Tstg -55~150 °C JEITA ? Note: Using continuously under heavy loads (e.g. the application of TOSHIBA 2-3S1A high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 10 mg (typ.) reliability significantly even if the operating conditions (i.e. operati

4.16. ssm3k128tu_070606.pdf Size:197K _toshiba

SSM3K128TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K128TU 0 High-Speed Switching Applications 0 Power Management Switch Applications UNIT: mm 2.1±0.1 • 4.0V drive 1.7±0.1 • Low ON-resistance : Ron = 360 m? (max) (@VGS = 4.0V) : Ron = 217 m? (max) (@VGS = 10V) 1 3 2 Absolute Maximum Ratings (Ta = 25?C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 V DC ID 1.5 Drain current A Pulse IDP 3.0 1. Gate 2. Source Drain power dissipation PD (Note 1) 500 mW UFM 3. Drain Channel temperature Tch 150 °C Storage temperature Tstg -55~150 °C JEDEC ? Note 1: Mounted on an FR4 board JEITA ? (25.4 mm ? 25.4 mm ? 1.6 t, Cu Pad: 645 mm2) TOSHIBA 2-2U1A Weight: 6.6 mg (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Drain-source breakdown voltage V (BR) DSS ID = 1 mA, VGS = 0 V 30 ? ? V Drain cutoff current IDSS VDS = 30 V

4.17. ssm3k101tu.pdf Size:251K _toshiba

SSM3K101TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K101TU High Speed Switching Applications Unit: mm • 1.8V drive 2.1±0.1 • Low on-resistance: Ron = 230m? (max) (@VGS = 1.8 V) 1.7±0.1 Ron = 138m? (max) (@VGS = 2.5 V) Ron = 103m? (max) (@VGS = 4.0 V) • Lead(Pb)-free 1 2 3 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS ± 12 V DC ID 2.2 Drain current A 1 :Gate Pulse IDP 4.4 2 :Source PD (Note1) 800 Drain power dissipation mW 3 :Drain PD (Note2) 500 UFM Channel temperature Tch 150 °C JEDEC ? Storage temperature range Tstg -55~150 °C JEITA ? Note1: Mounted on ceramic board. (25.4 mm ? 25.4 mm ? 0.8 mm, Cu Pad: 645 mm2 ) TOSHIBA 2-2U1A Note2: Mounted on FR4 board. Weight: 6.6 mg (typ.) (25.4 mm ? 25.4 mm ? 1.6 mm, Cu Pad: 645 mm2 ) Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min Typ. Max Unit V (BR) DS

4.18. ssm3k16ct_071101.pdf Size:157K _toshiba

SSM3K16CT TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K16CT High-Speed Switching Applications Unit: mm Analog Switch Applications • Suitable for high-density mounting due to compact package 0.6±0.05 0.5±0.03 • Low ON-resistance : Ron = 3.0 ? (max) (@VGS = 4 V) : Ron = 4.0 ? (max) (@VGS = 2.5 V) : Ron = 15 ? (max) (@VGS = 1.5 V) 3 Absolute Maximum Ratings (Ta = 25°C) 1 2 Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V 0.35±0.02 0.05±0.03 0.15±0.03 Gate-Source voltage VGSS ±10 V DC ID 100 Drain current mA Pulse IDP 200 Drain power dissipation (Ta = 25°C) PD (Note 1) 100 mW CST3 Channel temperature Tch 150 °C Storage temperature Tstg -55~150 °C JEDEC - Note: Using continuously under heavy loads (e.g. the application of JEITA - high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the TOSHIBA 2-1J1B reliability significantly even if the op

4.19. ssm3k102tu.pdf Size:251K _toshiba

SSM3K102TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K102TU High Speed Switching Applications Unit: mm • 1.8V drive 2.1±0.1 • Low on-resistance: Ron = 154m? (max) (@VGS = 1.8 V) 1.7±0.1 Ron = 99m? (max) (@VGS = 2.5 V) Ron = 71m? (max) (@VGS = 4.0 V) • Lead(Pb)-free 1 2 3 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS ± 12 V DC ID 2.6 Drain current A 1 :Gate Pulse IDP 5.2 2 :Source PD (Note1) 800 Drain power dissipation mW 3 :Drain PD (Note2) 500 UFM Channel temperature Tch 150 °C JEDEC ? Storage temperature range Tstg -55~150 °C JEITA ? Note1: Mounted on ceramic board. (25.4 mm ? 25.4 mm ? 0.8 mm, Cu Pad: 645 mm2 ) TOSHIBA 2-2U1A Note2: Mounted on FR4 board. Weight: 6.6 mg (typ.) (25.4 mm ? 25.4 mm ? 1.6 mm, Cu Pad: 645 mm2 ) Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min Typ. Max Unit V (BR) DSS

4.20. ssm3k12t_071101.pdf Size:219K _toshiba

SSM3K12T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K12T DC-DC Converter Unit: mm High Speed Switching Applications • Small Package • Low ON-resistance : Ron = 95 m? (max) (@VGS = 10 V) : Ron = 145 m? (max) (@VGS = 4.5 V) • High speed : ton = 21 ns : toff = 16 ns Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS ±20 V DC ID 3.0 Drain current A Pulse IDP (Note 2) 6.0 PD (Note 1) 0.7 Drain power dissipation (Ta = 25°C) W t = 10 s 1.25 JEDEC ? Channel temperature Tch 150 °C JEITA ? Storage temperature range Tstg -55~150 °C TOSHIBA 2-3S1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 10 mg (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/curren

4.21. ssm3k15fu_071101.pdf Size:207K _toshiba

SSM3K15FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FU High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low on resistance : Ron = 4.0 ? (max) (@VGS = 4 V) : Ron = 7.0 ? (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS 30 V Gate-source voltage VGSS ±20 V DC ID 100 Drain current mA Pulse IDP 200 Drain power dissipation (Ta = 25°C) PD(Note 1) 150 mW Channel temperature Tch 150 °C Storage temperature Tstg -55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEDEC ? absolute maximum ratings. Please design the appropriate reliability upon rev

4.22. ssm3k124tu.pdf Size:314K _toshiba

SSM3K124TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K124TU High Speed Switching Applications Unit: mm • 4 V drive 2.1±0.1 • Low ON-resistance: Ron = 120 m? (max) (@VGS = 4V) 1.7±0.1 Ron = 83 m? (max) (@VGS = 10V) • Lead(Pb)-free 1 2 3 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain–source voltage VDS 30 V Gate–source voltage VGSS ± 20 V DC ID 2.4 Drain current A 1 :Gate Pulse IDP 4.8 2 :Source PD (Note 1) 800 3 :Drain Drain power dissipation mW PD (Note 2) 500 UFM Channel temperature Tch 150 °C JEDEC ? Storage temperature range Tstg -55~150 °C JEITA ? Note 1: Mounted on a ceramic board. (25.4 mm ? 25.4 mm ? 0.8 t, Cu Pad: 645 mm2 ) TOSHIBA 2-2U1A Note 2: Mounted on an FR4 board. Weight: 6.6 mg (typ.) (25.4 mm ? 25.4 mm ? 1.6 t, Cu Pad: 645 mm2 ) Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Drain–source breakdown voltage V (BR) D

4.23. ssm3k121tu.pdf Size:165K _toshiba

SSM3K121TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K121TU Power Management Switch Applications High-Speed Switching Applications Unit: mm Unit: mm • 1.5 V drive • Low ON-resistance: Ron = 140 m? (max) (@VGS = 1.5 V) Ron = 93 m? (max) (@VGS = 1.8 V) 2.1±0.1 Ron = 63 m? (max) (@VGS = 2.5 V) 1.7±0.1 Ron = 48 m? (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25°C) 1 Characteristics Symbol Rating Unit 3 2 Drain-Source voltage VDS 20 V Gate-Source voltage VGSS ± 10 V DC ID 3.2 Drain current A Pulse IDP 6.4 PD (Note 1) 800 Drain power dissipation mW PD (Note 2) 500 Channel temperature Tch 150 °C 1: Gate Storage temperature range Tstg -55~150 °C 2: Source Note: Using continuously under heavy loads (e.g. the application of UFM 3: Drain high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating cond

4.24. ssm3k15afs_101129.pdf Size:206K _toshiba

SSM3K15AFS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15AFS Load Switching Applications Unit: mm • 2.5 V drive • Low ON-resistance: RDS(ON) = 3.6 ? (max) (@VGS = 4 V) RDS(ON) = 6.0 ? (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDSS 30 V Gate-Source voltage VGSS ± 20 V DC ID 100 Drain current mA Pulse IDP 400 Power dissipation PD 100 mW 1. Gate Channel temperature Tch 150 °C 2. Source Storage temperature range Tstg -55 to 150 °C 3. Drain SSM Note: Using continuously under heavy loads (e.g. the application of JEDEC ? high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEITA ? reliability significantly even if the operating conditions (i.e. TOSHIBA 2-2H1B operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Weight: 2.4 mg (typ.)

4.25. ssm3k15f_071101.pdf Size:156K _toshiba

SSM3K15F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15F High Speed Switching Applications Unit: mm Analog Switch Applications +0.5 2.5-0.3 +0.25 • Small package 1.5-0.15 • Low on resistance : Ron = 4.0 ? (max) (@VGS = 4 V) 1 : Ron = 7.0 ? (max) (@VGS = 2.5 V) 2 3 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS 30 V Gate-source voltage VGSS ±20 V 1.Gate DC ID 100 2.Source Drain current mA 3.Drain Pulse IDP 200 S-MINI Drain power dissipation (Ta = 25°C) PD 200 mW JEDEC TO-236MOD Channel temperature Tch 150 °C Storage temperature Tstg -55~150 °C JEITA SC-59 TOSHIBA 2-3F1F Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 0.012 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature

4.26. ssm3k15fv_071101.pdf Size:136K _toshiba

SSM3K15FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FV High Speed Switching Applications Analog Switch Applications Unit: mm 1.2±0.05 • Optimum for high-density mounting in small packages 0.8±0.05 • Low on-resistance : RDS(ON) = 4.0 ? (max) (@VGS = 4 V) : RDS(ON) = 7.0 ? (max) (@VGS = 2.5 V) 1 Absolute Maximum Ratings (Ta = 25°C) 3 Characteristics Symbol Rating Unit 2 Drain-source voltage VDS 30 V Gate-source voltage VGSS ±20 V DC ID 100 Drain current mA Pulse IDP 200 1. Gate Power dissipation PD (Note 1) 150 mW 2. Source Channel temperature Tch 150 °C VESM 3. Drain Storage temperature Tstg -55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of JEDEC - high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEITA - reliability significantly even if the operating conditions (i.e. operating temperature/current/volta

4.27. ssm3k131tu_081210.pdf Size:184K _toshiba

SSM3K131TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS?) SSM3K131TU 0 High-Speed Switching Applications Unit: mm • 4.5-V drive • Low ON-resistance : Ron = 41.5 m? (max) (@VGS = 4.5 V) 2.1±0.1 : Ron = 27.6 m? (max) (@VGS = 10 V) 1.7±0.1 Absolute Maximum Ratings (Ta = 25°C) 1 Characteristic Symbol Rating Unit 3 2 Drain-Source voltage VDSS 30 V Gate-Source voltage VGSS ±20 V DC ID (Note 1) 6.0 Drain current A Pulse IDP (Note 1) 12.0 PD (Note 2) 800 Drain power dissipation PD (Note 3) 500 mW t = 10 s 1000 Channel temperature Tch 150 °C 1: Gate 2: Source Storage temperature range Tstg -55 to 150 °C UFM 3: Drain Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC ? reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage,

4.28. ssm3k15ct_071101.pdf Size:157K _toshiba

SSM3K15CT TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K15CT High-Speed Switching Applications Unit: mm Analog Switch Applications 0.6±0.05 • Optimum for high-density mounting in small packages 0.5±0.03 • Low ON-resistance : Ron = 4.0 ? (max) (@VGS = 4 V) 3 : Ron = 7.0 ? (max) (@VGS = 2.5 V) 1 2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit 0.35±0.02 0.05±0.03 Drain-source voltage VDS 30 V 0.15±0.03 Gate-source voltage VGSS ±20 V DC ID 100 Drain current mA Pulse IDP 200 Drain power dissipation (Ta = 25°C) PD (Note 1) 100 mW CST3 Channel temperature Tch 150 °C Storage temperature Tstg -55~150 °C JEDEC - Note: Using continuously under heavy loads (e.g. the application of JEITA - high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the TOSHIBA 2-1J1B reliability significantly even if the operating conditions (i.e. Weight: 0.75

4.29. ssm3k107tu.pdf Size:366K _toshiba

SSM3K107TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K107TU High-Speed Switching Applications Unit: mm • 4 V drive 2.1±0.1 • Low ON-resistance: Ron = 410 m? (max) (@VGS = 4V) 1.7±0.1 Ron = 200 m? (max) (@VGS = 10V) • Lead(Pb)-free 1 2 3 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain–source voltage VDS 20 V Gate–source voltage VGSS ± 20 V DC ID 1.5 Drain current A 1 :Gate Pulse IDP 3.0 2 :Source PD (Note 1) 800 3 :Drain Drain power dissipation mW PD (Note 2) 500 UFM Channel temperature Tch 150 °C JEDEC ? Storage temperature range Tstg -55~150 °C JEITA ? Note 1: Mounted on a ceramic board. (25.4 mm ? 25.4 mm ? 0.8 t, Cu Pad: 645 mm2 ) TOSHIBA 2-2U1A Note 2: Mounted on an FR4 board. Weight: 6.6 mg (typ.) (25.4 mm ? 25.4 mm ? 1.6 t, Cu Pad: 645 mm2 ) Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Drain–source breakdown voltage V (BR) DS

4.30. ssm3k106tu.pdf Size:246K _toshiba

SSM3K106TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K106TU High-Speed Switching Applications Unit: mm 2.1±0.1 • 4 V drive 1.7±0.1 • Low ON-resistance: Ron = 530 m? (max) (@VGS = 4 V) Ron = 310 m? (max) (@VGS = 10 V) • Lead (Pb)-free 1 2 3 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source voltage VGSS ± 20 V DC ID 1.2 Drain current A 1: Gate Pulse IDP 2.4 2: Source PD (Note 1) 800 Drain power dissipation mW 3: Drain PD (Note 2) 500 UFM Channel temperature Tch 150 °C JEDEC ? Storage temperature range Tstg -55~150 °C JEITA ? Note 1: Mounted on a ceramic board. (25.4 mm ? 25.4 mm ? 0.8 mm, Cu Pad: 645 mm2 ) TOSHIBA 2-2U1A Note 2: Mounted on an FR4 board. Weight: 6.6 mg (typ.) (25.4 mm ? 25.4 mm ? 1.6 mm, Cu Pad: 645 mm2 ) Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min Typ. Max Unit Drain-source breakdown voltage V (BR

4.31. ssm3k126tu_071101.pdf Size:163K _toshiba

SSM3K126TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K126TU High-Speed Switching Applications • 4.0 V drive Unit: mm • Low ON-resistance: Ron = 43 m? (max) (@VGS = 4.0 V) Ron = 32 m? (max) (@VGS = 10 V) 2.1±0.1 1.7±0.1 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit 1 Drain-Source voltage VDSS 30 V Gate-Source voltage VGSS ± 20 V 3 2 DC ID 3.9 Drain current A Pulse IDP 7.8 PD (Note 1) 800 Drain power dissipation mW PD (Note 2) 500 Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Note: Using continuously under heavy loads (e.g. the application of 1 : Gate high temperature/current/voltage and the significant change in 2 : Source temperature, etc.) may cause this product to decrease in the UFM 3 : Drain reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please d

4.32. ssm3k15afu_101207.pdf Size:208K _toshiba

SSM3K15AFU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15AFU Load Switching Applications Unit: mm • 2.5 V drive • Low ON-resistance: RDS(ON) = 3.6 ? (max) (@VGS = 4 V) RDS(ON) = 6.0 ? (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDSS 30 V Gate-Source voltage VGSS ± 20 V DC ID 100 Drain current mA Pulse IDP 400 Power dissipation PD(Note 1) 150 mW 1. Gate Channel temperature Tch 150 °C 2. Source Storage temperature range Tstg -55 to 150 °C USM 3. Drain Note: Using continuously under heavy loads (e.g. the application of JEDEC ? high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEITA SC-70 reliability significantly even if the operating conditions (i.e. TOSHIBA 2-2E1E operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Weight: 6

See also transistors datasheet: SSM3K05FU , SSM3K09FU , SSM3K101TU , SSM3K102TU , SSM3K104TU , SSM3K105TU , SSM3K106TU , SSM3K107TU , 3SK73 , SSM3K119TU , SSM3K121TU , SSM3K122TU , SSM3K123TU , SSM3K124TU , SSM3K126TU , SSM3K127TU , SSM3K128TU .

Keywords