SSM3K315T MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: SSM3K315T

Type of SSM3K315T transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 30V

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 6

Maximum junction temperature (Tj), °C:

Rise Time of SSM3K315T transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0276

Package: TSM

Equivalent transistors for SSM3K315T

SSM3K315T PDF documents for downloads:

1.1. ssm3k315t_081104.pdf Size:206K _toshiba

SSM3K315T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS?) SSM3K315T 0 High-Speed Switching Applications Unit: mm • 4.5-V drive +0.2 • Low ON-resistance : Ron = 41.5 m? (max) (@VGS = 4.5 V) 2.8-0.3 : Ron = 27.6 m? (max) (@VGS = 10 V) +0.2 1.6-0.1 Absolute Maximum Ratings (Ta = 25°C) 1 Characteristic Symbol Rating Unit 23 Drain-Source voltage VDSS 30 V Gate-Source voltage VGSS ±20 V DC ID (Note 1) 6.0 Drain current A Pulse IDP (Note 1) 12.0 PD (Note 1) 700 Drain power dissipation mW t = 10 s 1250 Channel temperature Tch 150 °C Storage temperature range Tstg -55 to 150 °C 1: Gate Note: Using continuously under heavy loads (e.g. the application of high 2: Source temperature/current/voltage and the significant change in TSM 3: Drain temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the

3.1. ssm3k318t_090409.pdf Size:212K _toshiba

SSM3K318T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS?) SSM3K318T 0 Load Switching Applications 0 High-Speed Switching Applications Unit: mm +0.2 • 4.5 V drive 2.8-0.3 • Low ON-resistance : RDS(ON) = 145 m? (max) (@VGS = 4.5 V) +0.2 1.6-0.1 : RDS(ON) = 107 m? (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25°C) 1 Characteristic Symbol Rating Unit 23 Drain-Source voltage VDSS 60 V Gate-Source voltage VGSS ±20 V DC ID 2.5 Drain current A Pulse IDP 5.0 Drain power dissipation PD (Note 1) 700 mW Channel temperature Tch 150 °C Storage temperature range Tstg -55 to 150 °C 1: Gate Note: Using continuously under heavy loads (e.g. the application of high 2: Source TSM temperature/current/voltage and the significant change in 3: Drain temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JE

3.2. ssm3k316t_081020.pdf Size:174K _toshiba

SSM3K316T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K316T Power Management Switch Applications High-Speed Switching Applications Unit: mm • 1.8-V drive • Low ON-resistance: Ron = 131 m? (max) (@VGS = 1.8 V) Ron = 87 m? (max) (@VGS = 2.5 V) Ron = 65 m? (max) (@VGS = 4.5 V) Ron = 53 m? (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain–source voltage VDSS 30 V Gate–source voltage VGSS ± 12 V DC ID (Note 1) 4.0 Drain current A Pulse IDP (Note 1) 8.0 PD (Note 2) 700 Drain power dissipation mW t = 10s 1250 Channel temperature Tch 150 °C Storage temperature range Tstg -55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC ? reliability significantly even if the operating conditions (i.e. operating temperature/current/vo

3.3. ssm3k310t_071101.pdf Size:188K _toshiba

SSM3K310T TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K310T High-Speed Switching Applications • 1.5 V drive Unit: mm • Low ON-resistance: Ron = 66 m? (max) (@VGS = 1.5 V) +0.2 2.8-0.3 Ron = 43 m? (max) (@VGS = 1.8 V) +0.2 Ron = 32 m? (max) (@VGS = 2.5 V) 1.6-0.1 Ron = 28 m? (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25°C) 1 23 Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS ± 10 V DC ID 5.0 Drain current A Pulse IDP 10.0 Drain power dissipation PD (Note 1) 700 mW Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C 1.GATE 2.SOURCE Note: Using continuously under heavy loads (e.g. the application of TSM 3.DRAIN high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC ? reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.)

See also transistors datasheet: SSM3K16FU , SSM3K16FV , SSM3K17FU , SSM3K301T , SSM3K302T , SSM3K303T , SSM3K309T , SSM3K310T , IRF830 , SSM3K316T , SSM3K318T , SSM3K320T , SSM3K329R , SSM3K333R , SSM3K35CT , SSM3K35FS , SSM3K35MFV .

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