SSM6J26FE MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: SSM6J26FE

Type of SSM6J26FE transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 20V

Maximum gate-source voltage |Ugs|, V: 8

Maximum drain current |Id|, A: 0.5

Maximum junction temperature (Tj), °C:

Rise Time of SSM6J26FE transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.23

Package: SOT563/ES6

Equivalent transistors for SSM6J26FE

SSM6J26FE PDF documents for downloads:

1.1. ssm6j26fe.pdf Size:154K _toshiba

SSM6J26FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) SSM6J26FE High Speed Switching Applications Unit: mm 1.6±0.05 • Optimum for high-density mounting in small packages • Low on-resistance: Ron = 230m? (max) (@VGS = -4 V) 1.2±0.05 Ron = 330m? (max) (@VGS = -2.5 V) Ron = 980m? (max) (@VGS = -1.8 V) 1 6 5 Maximum Ratings (Ta = 25°C) 2 4 3 Characteristics Symbol Rating Unit Drain-Source voltage VDS -20 V Gate-Source voltage VGSS ± 8 V DC ID -0.5 Drain current A Pulse IDP -1.5 1,2,5,6 :Drain PD 3 :Gate Drain power dissipation 500 mW (Note1) 4 :Source Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C ES6 Note1: Mounted on FR4 board. 2 JEDEC ? (25.4 mm ? 25.4 mm ? 1.6 t, Cu Pad: 645 mm ) JEITA ? TOSHIBA 2-2N1A Marking Equivalent Circuit (top view) Weight: 3.0 mg (typ.) 6 5 4 6 5 4 PI 1 2 3 1 2 3 Handling Precaution When handling individual devices (which are not yet mounte

4.1. ssm6j206fe.pdf Size:305K _toshiba

SSM6J206FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J206FE 0 Power Management Switch Applications Unit: mm 0 High-Speed Switching Applications • 1.8 V drive • Low ON-resistance: Ron = 320 m? (max) (@VGS = -1.8 V) Ron = 186 m? (max) (@VGS = -2.5 V) R = 130 m? (max) (@V = -4.0 V) on GS • Lead (Pb) free Maximum Ratings (Ta = 25?C) Characteristic Symbol Rating Unit Drain–source voltage VDS -20 V Gate–source voltage VGSS ± 8 V DC ID -2 1, 2, 5, 6 : Drain Drain current A 3 : Gate Pulse IDP -4 4 : Source ES6 Drain power dissipation PD (Note 1) 500 mW Channel temperature Tch 150 °C JEDEC ? Storage temperature Tstg -55 to 150 °C JEITA ? Note 1: Mounted on an FR4 board TOSHIBA 2-2N1A (25.4 mm ? 25.4 mm ? 1.6 t, Cu Pad: 645 mm2) Weight: 3 mg (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit V (BR) DSS ID = -1 mA, VGS = 0 -20 ? ? Drain–source breakdown voltage V

4.2. ssm6j213fe_101129.pdf Size:202K _toshiba

SSM6J213FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS?) SSM6J213FE 0 Power Management Switch Applications Unit: mm • 1.5-V drive • Low ON-resistance: RDS(ON) = 250 m? (max) (@VGS = -1.5 V) RDS(ON) = 178 m? (max) (@VGS = -1.8 V) RDS(ON) = 133 m? (max) (@VGS = -2.5 V) RDS(ON) = 103 m? (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage VGSS ± 8 V ID (Note 1) -2.6 DC Drain current A IDP (Note 1) -5.2 Pulse PD (Note 2) 500 Power dissipation mW t = 10s 700 Channel temperature Tch 150 °C 1,2,5,6 : Drain Storage temperature range Tstg -55 to 150 °C ES6 3 : Gate Note: Using continuously under heavy loads (e.g. the application of high 4 : Source temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC ? reliability significantly even if the operating cond

4.3. ssm6j212fe_101115.pdf Size:190K _toshiba

SSM6J212FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS?) SSM6J212FE 0 Power Management Switch Applications Unit: mm • 1.5-V drive • Low ON-resistance: RDS(ON) = 94.0 m? (max) (@VGS = -1.5 V) RDS(ON) = 65.4 m? (max) (@VGS = -1.8 V) RDS(ON) = 49.0 m? (max) (@VGS = -2.5 V) RDS(ON) = 40.7 m? (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage VGSS ± 8 V ID (Note 1) -4.0 DC Drain current A IDP (Note 1) -8.0 Pulse 1,2,5,6 : Drain PD (Note 2) 500 Power dissipation mW 3 : Gate t = 10s 700 4 : Source ES6 Channel temperature Tch 150 °C Storage temperature range Tstg -55 to 150 °C JEDEC ? Note: Using continuously under heavy loads (e.g. the application of high JEITA ? temperature/current/voltage and the significant change in TOSHIBA 2-2N1J temperature, etc.) may cause this product to decrease in the reliability significant

4.4. ssm6j23fe.pdf Size:250K _toshiba

SSM6J23FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS?) SSM6J23FE High Current Switching Applications Unit: mm DC-DC Converter • Suitable for high-density mounting due to compact package • Low on-resistance: Ron = 160 m? (max) (@VGS = -4.0 V) Ron = 210 m? (max) (@VGS = -2.5 V) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -12 V 1,2,5,6 : Drain Gate-Source voltage VGSS ±8 V 3 : Gate DC ID -1.2 4 : Source Drain current A Pulse IDP -4.8 PD Drain power dissipation 500 mW (Note1) JEDEC - Channel temperature Tch 150 °C JEITA - Storage temperature range Tstg -55~150 °C TOSHIBA 2-2N1A Note1: Mounted on FR4 board. Weight: 3 mg (typ.) 2 (25.4 mm ? 25.4 mm ? 1.6 t, Cu Pad: 645 mm ) Marking Equivalent Circuit 6 5 4 6 5 4 KE 1 2 3 1 2 3 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protect

4.5. ssm6j214fe_110125.pdf Size:191K _toshiba

SSM6J214FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS?) SSM6J214FE 0 Power Management Switch Applications Unit: mm • 1.8 V drive • Low ON-resistance: RDS(ON) = 149.6 m? (max) (@VGS = -1.8 V) RDS(ON) = 77.6 m? (max) (@VGS = -2.5 V) RDS(ON) = 57.0 m? (max) (@VGS = -4.5 V) RDS(ON) = 50.0 m? (max) (@VGS = -10 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS -30 V Gate-source voltage VGSS ± 12 V ID (Note 1) -3.6 DC Drain current A IDP (Note 1) -7.2 Pulse 1,2,5,6 : Drain PD (Note 2) 500 Power dissipation mW 3 : Gate t = 10s 700 4 : Source ES6 Channel temperature Tch 150 °C Storage temperature range Tstg -55 to 150 °C JEDEC ? Note: Using continuously under heavy loads (e.g. the application of high JEITA ? temperature/current/voltage and the significant change in TOSHIBA 2-2N1J temperature, etc.) may cause this product to decrease in the reliability significa

4.6. ssm6j21tu.pdf Size:157K _toshiba

SSM6J21TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS?) SSM6J21TU High Current Switching Applications Unit: mm • Suitable for high-density mounting due to compact package • Low on resistance: Ron = 88 m? (max) (@VGS = -2.5 V) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -12 V Gate-Source voltage VGSS ±12 V 1,2,5,6 : Drain DC ID -3 3 : Gate Drain current A Pulse IDP -6 4 : Source PD Drain power dissipation 500 mW (Note1) Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C JEDEC - Note1: Mounted on FR4 board. JEITA - 2 (25.4 mm ? 25.4 mm ? 1.6 t, Cu Pad: 645 mm ) TOSHIBA - Weight: 7 mg (typ.) Marking Equivalent Circuit 6 5 4 6 5 4 KPA 1 2 3 1 2 3 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic discharge. Operators should wear anti-s

4.7. ssm6j205fe.pdf Size:218K _toshiba

SSM6J205FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J205FE High-Speed Switching Applications Power Management Switch Applications Unit: mm • 1.8V drive • P-ch 2-in-1 • Low ON-resistance: Ron = 460 m? (max) (@VGS = -1.8 V) Ron = 306 m? (max) (@VGS = -2.5 V) Ron = 234 m? (max) (@VGS = -4.0 V) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDS -20 V Gate-source voltage VGSS ± 8 V DC ID -0.8 Drain current A Pulse IDP -1.6 1, 2, 5, 6 : Drain 3 : Gate Drain power dissipation PD (Note1) 500 mW 4 : Source ES6 Channel temperature Tch 150 °C Storage temperature range Tstg -55 to 150 °C JEDEC ? Note1: Mounted on an FR4 board (total dissipation) JEITA ? (25.4 mm ? 25.4 mm ? 1.6 mm, Cu Pad: 645 mm2 ) TOSHIBA 2-2N1A Weight: 3 mg (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min Typ. Max Unit V (BR) DSS ID = - 1 mA, VGS = 0 - 20 ? ? Drain-source b

4.8. ssm6j207fe.pdf Size:312K _toshiba

SSM6J207FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J207FE 0 High-Speed Switching Applications Unit: mm • 4 V drive • Low ON-resistance: Ron = 491 m? (max) (@VGS = -4 V) Ron = 251 m? (max) (@VGS = -10 V) Maximum Ratings (Ta = 25?C) Characteristic Symbol Rating Unit Drain–source voltage VDS -30 V Gate–source voltage VGSS ± 20 V DC ID -1.4 Drain current A Pulse IDP -2.8 Drain power dissipation PD (Note 1) 500 mW 1, 2, 5, 6 : Drain 3 : Gate Channel temperature Tch 150 °C 4 : Source Storage temperature Tstg -55 to 150 °C ES6 Note 1: Mounted on an FR4 board JEDEC ? (25.4 mm ? 25.4 mm ? 1.6 t, Cu Pad: 645 mm2) JEITA ? TOSHIBA 2-2N1A Weight: 3 mg (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit V (BR) DSS ID = -1 mA, VGS = 0 -30 ? ? Drain–source breakdown voltage V V (BR) DSX ID = -1 mA, VGS = + 20 V -15 ? ? Drain cutoff current IDSS VDS = -30 V, VGS = 0 ? ?

4.9. ssm6j25fe.pdf Size:152K _toshiba

SSM6J25FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) SSM6J25FE High Speed Switching Applications Unit: mm 1.6±0.05 • Optimum for high-density mounting in small packages • Low on-resistance: Ron = 260m? (max) (@VGS = -4 V) 1.2±0.05 Ron = 430m? (max) (@VGS = -2.5 V) 1 6 5 Maximum Ratings (Ta = 25°C) 2 4 3 Characteristics Symbol Rating Unit Drain-Source voltage VDS -20 V Gate-Source voltage VGSS ± 12 V DC ID -0.5 Drain current A Pulse IDP -1.5 1,2,5,6 :Drain PD 3 :Gate Drain power dissipation 500 mW (Note1) 4 :Source Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C ES6 Note1: Mounted on FR4 board. 2 JEDEC ? (25.4 mm ? 25.4 mm ? 1.6 t, Cu Pad: 645 mm ) JEITA ? TOSHIBA 2-2N1A Marking Equivalent Circuit (top view) Weight: 3.0 mg (typ.) 6 5 4 6 5 4 PH 1 2 3 1 2 3 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the

See also transistors datasheet: SSM6J206FE , SSM6J207FE , SSM6J212FE , SSM6J213FE , SSM6J214FE , SSM6J21TU , SSM6J23FE , SSM6J25FE , IRF1407 , SSM6J401TU , SSM6J402TU , SSM6J409TU , SSM6J410TU , SSM6J412TU , SSM6J501NU , SSM6J502NU , SSM6J503NU .

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