MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
TK10A50D
  TK10A50D
  TK10A50D
 
TK10A50D
  TK10A50D
  TK10A50D
 
TK10A50D
  TK10A50D
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AOD409
AOD4102 ..AON6240
AON6242 ..AP03N70I-H
AP03N70I-HF ..AP2326GN-HF
AP2327GN-HF ..AP4432GM
AP4433GM-HF ..AP70L02GH
AP70L02GJ ..AP9565BGM-HF
AP9565GEH ..AP9992GP-A-HF
AP9992GP-HF ..APT60M90JN
APT8015JVFR ..AUIRFR9024N
AUIRFS3004 ..BF961
BF963 ..BLF7G22L-200
BLF7G22L-250P ..BSC900N20NS3G
BSD223P ..BUK104-50SP
BUK106-50L ..BUK7606-55B
BUK7606-75B ..BUK9675-55A
BUK9775-55 ..CEB12N5
CEB12N6 ..CEK01N6G
CEK01N7 ..CES2323
CES2324 ..DMN2114SN
DMN2170U ..F5031
F5032 ..FDB8832
FDB8832_F085 ..FDD8870_F085
FDD8874 ..FDMS2502SDC
FDMS2504SDC ..FDP42AN15A0
FDP51N25 ..FDS6690A
FDS6690AS ..FK25SM-6
FK30SM-5 ..FQI4N90
FQI50N06 ..FQU2N60C
FQU2N90TU_AM002 ..FSJ260R
FSJ264D ..H5N5016PL
H5N6001P ..HAT2167N
HAT2168H ..HUF75652G3
HUF75842P3 ..IPB100N04S2-04
IPB100N04S2L-03 ..IPD50N06S4-09
IPD50N06S4L-08 ..IPP04N03LBG
IPP052N06L3G ..IPW60R199CP
IPW60R250CP ..IRF3709Z
IRF3709ZCS ..IRF6711S
IRF6712S ..IRF7704G
IRF7705 ..IRF9Z35
IRFB11N50A ..IRFI1010N
IRFI1310N ..IRFP3306
IRFP331 ..IRFS11N50A
IRFS130 ..IRFS9641
IRFS9642 ..IRFZ22
IRFZ22FI ..IRLIZ24N
IRLIZ34A ..ITF86116SQT
ITF86130SK8T ..IXFH40N30Q
IXFH40N50Q ..IXFM40N30
IXFM42N20 ..IXFR38N80Q2
IXFR40N50Q2 ..IXFX360N15T2
IXFX38N80Q2 ..IXTC110N25T
IXTC13N50 ..IXTH90P10P
IXTH96N20P ..IXTP4N60P
IXTP4N80P ..IXTU1R4N60P
IXTU2N80P ..KF5N53DS
KF5N53F ..KP7173A
KP723A ..MKE11R600DCGFC
MKE11R600DCGFC ..MTC4506Q8
MTC5806Q8 ..MTN4N60J3
MTN4N65FP ..NDC631N
NDC632P ..NTD6416AN
NTD6416ANL ..NX3008PBK
NX3008PBKS ..PMG370XN
PMG85XP ..PSMN5R6-100XS
PSMN5R8-30LL ..RFG40N10LE
RFG45N06 ..RJK1526DPF
RJK1526DPJ ..RSJ250P10
RSJ300N10 ..SDF460JED
SDF4N100JAA ..SGSP381
SGSP382 ..SML1001R1AN
SML1001R1BN ..SML802R8KN
SML8030CFN ..SPW11N80C3
SPW12N50C3 ..SSH9N90A
SSI1N50A ..SSM6K30FE
SSM6K31FE ..STB100NF03L-03
STB100NF04 ..STD25NF10LA
STD26NF10 ..STF20NF20
STF20NK50Z ..STL150N3LLH6
STL15DN4F5 ..STP30NF20
STP30NM30N ..STP8NK80Z
STP8NK80ZFP ..STW25N95K3
STW25NM60ND ..TK19J55D
TK1P90A ..TPC8058-H
TPC8059-H ..TPCL4202
TPCL4203 ..UT9564
UT9971P ..ZVP3306F
ZVP3310A ..ZXMS6006SG
 
TK10A50D All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

TK10A50D MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: TK10A50D

Type of TK10A50D transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 45

Maximum drain-source voltage |Uds|, V: 500

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 10

Maximum junction temperature (Tj), °C:

Rise Time of TK10A50D transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.72

Package: TO220SIS

Equivalent transistors for TK10A50D

TK10A50D PDF doc:

1.1. tk10a50d_en_datasheet_100603.pdf Size:197K _toshiba2

TK10A50D
TK10A50D
TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) TK10A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 ? (typ.) High forward transfer admittance: ?Yfs? = 5.0 S (typ.) Low leakage current: IDSS = 10 ?A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Gate-source voltage VGSS 30 V DC (Note 1) ID 10 Drain current A Pulse (t = 1 ms) IDP 40 (Note 1) 1: Gate Drain power dissipation (Tc = 25C) 2: Drain PD 45 W 3: Source Single pulse avalanche energy EAS 264 mJ (Note 2) JEDEC ? Avalanche current IAR 10 A JEITA SC-67 Repetitive avalanche energy (Note 3) EAR 4.5 mJ Channel temperature Tch 150 C TOSHIBA 2-10U1B Storage temperature range Tstg -55 to 150 C Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the

4.1. tk10a55d_en_datasheet_100827.pdf Size:189K _toshiba2

TK10A50D
TK10A50D
TK10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) TK10A55D Switching Regulator Applications Unit: mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.56 ?(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 ?A (max) (VDS = 550 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 1.14 0.15 0.69 0.15 Absolute Maximum Ratings (Ta = 25C) M A 0.2 2.54 2.54 Characteristics Symbol Rating Unit 1 2 3 Drain-source voltage VDSS 550 V Gate-source voltage VGSS 30 V DC (Note 1) ID 10 1: Gate Drain current A 2: Drain Pulse (Note 1) IDP 40 3: Source Drain power dissipation (Tc = 25C) PD 45 W JEDEC ? Single pulse avalanche energy EAS 264 mJ (Note 2) JEITA SC-67 Avalanche current IAR 10 A TOSHIBA 2-10U1B Repetitive avalanche energy (Note 3) EAR 4.5 mJ Weight: 1.7 g (typ.) Channel temperature Tch 150 C Storage te

5.1. tk10a60d.pdf Size:186K _toshiba2

TK10A50D
TK10A50D
TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS VII) TK10A60D Unit: mm Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.58 ? (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 ?A (max) (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS 30 V DC (Note 1) ID 10 Drain current A Pulse (Note 1) IDP 40 1: Gate 2: Drain Drain power dissipation (Tc = 25C) PD 45 W 3: Source Single pulse avalanche energy EAS 363 mJ (Note 2) Avalanche current IAR 10 A JEDEC ? Repetitive avalanche energy (Note 3) EAR 4.5 mJ JEITA SC-67 Channel temperature Tch 150 C TOSHIBA 2-10U1B Storage temperature range Tstg -55 to 150 C Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the applicat

See also transistors datasheet: TJ50S06M3L , TJ60S04M3L , TJ60S06M3L , TJ70A06J3 , TJ80S04M3L , TJ8S06M3L , TK100F04K3 , TK100F06K3 , IRF9Z34 , TK10A55D , TK10A60D , TK10S04K3L , TK10X40D , TK11A45D , TK11A50D , TK11A55D , TK11A60D .

Keywords

 TK10A50D Datasheet  TK10A50D Datenblatt  TK10A50D RoHS  TK10A50D Distributor
 TK10A50D Application Notes  TK10A50D Component  TK10A50D Circuit  TK10A50D Schematic
 TK10A50D Equivalent  TK10A50D Cross Reference  TK10A50D Data Sheet  TK10A50D Fiche Technique

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