MOSFET Datasheet



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TK10A50D
  TK10A50D
  TK10A50D
 
TK10A50D
  TK10A50D
  TK10A50D
 
TK10A50D
  TK10A50D
 
 
List
03N06 ..2N5116
2N5196 ..2N6798
2N6798JANTX ..2N7272H3
2N7272H4 ..2SJ365
2SJ368 ..2SK1082
2SK1086 ..2SK1459LS
2SK146 ..2SK1888
2SK1889 ..2SK2333
2SK2339 ..2SK2706
2SK2707 ..2SK3067
2SK3068 ..2SK3467
2SK3469-01MR ..2SK4016
2SK4017 ..2SK901
2SK902 ..3SK180-6
3SK181 ..7N50
7N50A ..AO4842
AO4850 ..AOD4185
AOD4186 ..AON6298
AON6400 ..AOT254L
AOT25S65 ..AOWF2606
AOWF412 ..AP1RC03GMT-HF
AP20N15AGH-HF ..AP40T03GH
AP40T03GI ..AP60T03GH-HF
AP60T03GI ..AP9466GH
AP9466GJ ..AP9971GD
AP9971GH ..APM9410K
APM9424 ..APT20M38BVR
APT20M38SVR ..APT8015JVFR
APT8015JVR ..AUIRFR2607Z
AUIRFR2905Z ..BF904
BF904A ..BLF6G38S-25
BLF7G10L-250 ..BSB019N03LXG
BSB024N03LXG ..BSR92P
BSS100 ..BUK653R3-30C
BUK653R4-40C ..BUK9214-30A
BUK9215-55A ..BUZ50A-220M
BUZ50A-220SM ..CED16N10
CED16N10L ..CEP02N65G
CEP02N6A ..CL616BA
CLY2 ..DMN62D1SFB
DMN66D0LDW ..FCP110N65F
FCP11N60 ..FDC6302P
FDC6303N ..FDG6335N
FDG8842CZ ..FDMS3660AS
FDMS3660S ..FDP5680
FDP5690 ..FDS8449
FDS8449_F085 ..FQA44N30
FQA46N15 ..FQPF11N50CF
FQPF11P06 ..FRM9130R
FRM9140D ..FTD02N70
FTD04N60A ..H5N3003P
H5N3004P ..HAT2137H
HAT2139H ..HUF75545P3
HUF75545S3S ..IPB049NE7N3G
IPB050N06NG ..IPD30N06S2L-13
IPD30N06S2L-23 ..IPI90R800C3
IPL60R199CP ..IPU103N08N3G
IPU135N03LG ..IRF3305
IRF3315 ..IRF6621
IRF6622 ..IRF7495
IRF7501 ..IRF9633
IRF9640 ..IRFH5250D
IRFH5255 ..IRFP230
IRFP231 ..IRFR411
IRFR420 ..IRFS9133
IRFS9140 ..IRFW840A
IRFWZ14A ..IRLD024
IRLD110 ..IRLW540A
IRLW610A ..IXFH22N55
IXFH22N60P ..IXFK90N20
IXFK90N20Q ..IXFR15N100Q3
IXFR15N80Q ..IXFX170N20T
IXFX180N07 ..IXTA50N20P
IXTA50N25T ..IXTH50P085
IXTH50P10 ..IXTP24P085T
IXTP260N055T2 ..IXTT360N055T2
IXTT36N50P ..KF13N50F
KF13N50P ..KMC7D0CN20C
KMC7D0CN20CA ..LS3954
LS3954A ..MTB20P03L3
MTB22N04J3 ..MTN2302V3
MTN2304M3 ..MTP4411M3
MTP4411Q8 ..NTA7002N
NTB25P06 ..NTNUS3171PZ
NTP2955 ..P0903BEA
P0903BIS ..P45N03LTFG
P5002CDG ..PHB42N03LT
PHB44N06LT ..PMF3800SN
PMF400UN ..PSMN5R0-100PS
PSMN5R0-30YL ..RFD12N06RLE
RFD12N06RLESM ..RJK0454DPB
RJK0455DPB ..RQK0605JGDQA
RQK0606KGDQA ..SDF10N90
SDF11N100GAF ..SFR9220
SFR9224 ..SMG2301
SMG2301P ..SML4080CN
SML4080GN ..SPA03N60C3
SPA04N50C3 ..SSD40P04-20D
SSD40P04-20DE ..SSF4N60G
SSF4N80AS ..SSG4940NC
SSG4942N ..SSM3K36MFV
SSM3K36TU ..SSPL6005
SSPL6022 ..STB458D
STB45NF06 ..STD5N20T4
STD5N52K3 ..STF8N65M5
STF8NK100Z ..STL90N3LLH6
STL9N3LLH5 ..STP20N06
STP20N06FI ..STP656F
STP65NF06 ..STT03N20
STT04N20 ..STV55N05L
STV55N06L ..TK12A50D
TK12A53D ..TPC6109-H
TPC6110 ..TPCA8A02-H
TPCA8A04-H ..UT3404
UT3406 ..YW3407
ZDM4206N ..ZXMP6A18DN8
ZXMP6A18K ..ZXMS6006SG
 
TK10A50D MOSFET DataSheet. BJT, Power MOSFET, IGBT, IC Catalog
 

TK10A50D MOSFET (IC) Datasheet. Cross Reference Search. TK10A50D Equivalent

Type Designator: TK10A50D

Type of TK10A50D transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 45

Maximum drain-source voltage |Uds|, V: 500

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 10

Maximum junction temperature (Tj), °C:

Rise Time of TK10A50D transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.72

Package: TO220SIS

Equivalent transistors for TK10A50D - Cross-Reference Search

 

TK10A50D PDF doc:

1.1. tk10a50d_en_datasheet_100603.pdf Size:197K _toshiba2

TK10A50D
TK10A50D
TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) TK10A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 ? (typ.) High forward transfer admittance: ?Yfs? = 5.0 S (typ.) Low leakage current: IDSS = 10 ?A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Gate-source voltage VGSS 30 V DC (Note 1) ID 10 Drain current A Pulse (t = 1 ms) IDP 40 (Note 1) 1: Gate Drain power dissipation (Tc = 25C) 2: Drain PD 45 W 3: Source Single pulse avalanche energy EAS 264 mJ (Note 2) JEDEC ? Avalanche current IAR 10 A JEITA SC-67 Repetitive avalanche energy (Note 3) EAR 4.5 mJ Channel temperature Tch 150 C TOSHIBA 2-10U1B Storage temperature range Tstg -55 to 150 C Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the

4.1. tk10a55d_en_datasheet_100827.pdf Size:189K _toshiba2

TK10A50D
TK10A50D
TK10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) TK10A55D Switching Regulator Applications Unit: mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.56 ?(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 ?A (max) (VDS = 550 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 1.14 0.15 0.69 0.15 Absolute Maximum Ratings (Ta = 25C) M A 0.2 2.54 2.54 Characteristics Symbol Rating Unit 1 2 3 Drain-source voltage VDSS 550 V Gate-source voltage VGSS 30 V DC (Note 1) ID 10 1: Gate Drain current A 2: Drain Pulse (Note 1) IDP 40 3: Source Drain power dissipation (Tc = 25C) PD 45 W JEDEC ? Single pulse avalanche energy EAS 264 mJ (Note 2) JEITA SC-67 Avalanche current IAR 10 A TOSHIBA 2-10U1B Repetitive avalanche energy (Note 3) EAR 4.5 mJ Weight: 1.7 g (typ.) Channel temperature Tch 150 C Storage te

5.1. tk10a60d.pdf Size:186K _toshiba2

TK10A50D
TK10A50D
TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS VII) TK10A60D Unit: mm Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.58 ? (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 ?A (max) (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS 30 V DC (Note 1) ID 10 Drain current A Pulse (Note 1) IDP 40 1: Gate 2: Drain Drain power dissipation (Tc = 25C) PD 45 W 3: Source Single pulse avalanche energy EAS 363 mJ (Note 2) Avalanche current IAR 10 A JEDEC ? Repetitive avalanche energy (Note 3) EAR 4.5 mJ JEITA SC-67 Channel temperature Tch 150 C TOSHIBA 2-10U1B Storage temperature range Tstg -55 to 150 C Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the applicat

See also transistors datasheet: TJ50S06M3L , TJ60S04M3L , TJ60S06M3L , TJ70A06J3 , TJ80S04M3L , TJ8S06M3L , TK100F04K3 , TK100F06K3 , IRF9Z34 , TK10A55D , TK10A60D , TK10S04K3L , TK10X40D , TK11A45D , TK11A50D , TK11A55D , TK11A60D .

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