TK20S06K3L MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: TK20S06K3L

Type of TK20S06K3L transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 38

Maximum drain-source voltage |Uds|, V: 60V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 20

Maximum junction temperature (Tj), °C:

Rise Time of TK20S06K3L transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0

Package: DPAK+

Equivalent transistors for TK20S06K3L

TK20S06K3L PDF documents for downloads:

1.1. tk20s06k3l_en_datasheet_110716.pdf Size:236K _toshiba2

TK20S06K3L MOSFETs Silicon N-channel MOS (U-MOS ?) TK20S06K3L TK20S06K3L TK20S06K3L TK20S06K3L 1. Applications 1. Applications 1. Applications 1. Applications • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 23 m? (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (3) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+ 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) Characteristics Symbol Rating

4.1. tk20s04k3l_en_datasheet_110716.pdf Size:236K _toshiba2

TK20S04K3L MOSFETs Silicon N-channel MOS (U-MOS ?) TK20S04K3L TK20S04K3L TK20S04K3L TK20S04K3L 1. Applications 1. Applications 1. Applications 1. Applications • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 11 m? (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (3) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+ 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) Characteristics Symbol Rating

See also transistors datasheet: TK1Q90A , TK20A25D , TK20A60U , TK20E60U , TK20J50D , TK20J60U , TK20P04M1 , TK20S04K3L , IRLR2905 , TK20X60U , TK25A10K3 , TK25A20D , TK2A65D , TK2P60D , TK2Q60D , TK30A06J3A , TK30A06J3 .

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