TK80E06K3A MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: TK80E06K3A

Type of TK80E06K3A transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 125

Maximum drain-source voltage |Uds|, V: 60V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 80

Maximum junction temperature (Tj), °C:

Rise Time of TK80E06K3A transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0058

Package: TO220

Equivalent transistors for TK80E06K3A

TK80E06K3A PDF documents for downloads:

1.1. tk80e06k3a_en_datasheet_110809.pdf Size:235K _toshiba2

TK80E06K3A MOSFETs Silicon N-channel MOS (U-MOS ?) TK80E06K3A TK80E06K3A TK80E06K3A TK80E06K3A 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 4.8 m? (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (3) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (T = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) a Characteristics Symbol Rating Unit Drain-source voltage VDSS 60 V Gate-

See also transistors datasheet: TK70X06K3 , TK75A06K3 , TK7A45DA , TK7A50D , TK7A55D , TK7A65D , TK7P50D , TK80A08K3 , IRFP250 , TK80F08K3 , TK80S04K3L , TK80S06K3L , TK80X04K3 , TK8A10K3 , TK8A25DA , TK8A45DA , TK8A45D .

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