TK8A45DA MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: TK8A45DA

Type of TK8A45DA transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 35

Maximum drain-source voltage |Uds|, V: 450V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 7.5

Maximum junction temperature (Tj), °C:

Rise Time of TK8A45DA transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 1.1

Package: TO220SIS

Equivalent transistors for TK8A45DA

TK8A45DA PDF documents for downloads:

3.1. tk8a45d_110214.pdf Size:228K _toshiba

TK8A45D MOSFETs Silicon N-Channel MOS (?-MOS?) TK8A45D TK8A45D TK8A45D TK8A45D 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.73 ? (typ.) (2) High forward transfer admittance: |Yfs| = 3.8 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 450 V) (4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (T = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) a Characteristics Symbol Ra

See also transistors datasheet: TK80A08K3 , TK80E06K3A , TK80F08K3 , TK80S04K3L , TK80S06K3L , TK80X04K3 , TK8A10K3 , TK8A25DA , 2SK956 , TK8A45D , TK8A50DA , TK8A50D , TK8A55DA , TK8A60DA , TK8A65D , TK8P25DA , TK8S06K3L .

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