TK8A50DA MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: TK8A50DA

Type of TK8A50DA transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 35

Maximum drain-source voltage |Uds|, V: 500V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 7.5

Maximum junction temperature (Tj), °C:

Rise Time of TK8A50DA transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 1.04

Package: TO220SIS

Equivalent transistors for TK8A50DA

TK8A50DA PDF documents for downloads:

1.1. tk8a50da_100414.pdf Size:209K _toshiba

TK8A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) TK8A50DA Switching Regulator Applications Unit: mm 2.7 ± 0.2 10 ± 0.3 Ô3.2 ± 0.2 A • Low drain-source ON-resistance: RDS (ON) = 0.76 ? (typ.) • High forward transfer admittance: ?Yfs? = 4.1 S (typ.) • Low leakage current: IDSS = 10 ?A (max) (VDS = 500 V) • Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 1.14 ± 0.15 Absolute Maximum Ratings (Ta = 25°C) 0.69 ± 0.15 M A Ô0.2 Characteristics Symbol Rating Unit 2.54 2.54 Drain-source voltage VDSS 500 V 1 2 3 Gate-source voltage VGSS ±30 V DC (Note 1) ID 7.5 Drain current A Pulse (t = 1 ms) 1: Gate IDP 30 (Note 1) 2: Drain 3: Source Drain power dissipation (Tc = 25°C) PD 35 W JEDEC ? Single pulse avalanche energy EAS 140 mJ (Note 2) JEITA SC-67 Avalanche current IAR 7.5 A TOSHIBA 2-10U1B Repetitive avalanche energy (Note 3) EAR 3.5 mJ Weight : 1.7 g (typ.) Channel temperature Tch

3.1. tk8a50d_100603.pdf Size:180K _toshiba

TK8A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) TK8A50D Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 0.7 ? (typ.) • High forward transfer admittance: |Yfs| = 4.0 S (typ.) • Low leakage current: IDSS = 10 ?A (max) (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 8 1: Gate Drain current A Pulse (t = 1 ms) 2: Drain IDP 32 (Note 1) 3: Source Drain power dissipation (Tc = 25°C) PD 40 W Single pulse avalanche energy EAS 165 mJ (Note 2) JEDEC ? Avalanche current IAR 8 A JEITA SC-67 Repetitive avalanche energy (Note 3) EAR 4.0 mJ TOSHIBA 2-10U1B Channel temperature Tch 150 °C Weight : 1.7 g (typ.) Storage temperature range Tstg -55 to 150 °C Note: Using continuously under heavy loads (e.g. the a

5.1. tk8a55da_100406.pdf Size:201K _toshiba

TK8A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) TK8A55DA Switching Regulator Applications Unit: mm 2.7 ± 0.2 10 ± 0.3 Ô3.2 ± 0.2 A • Low drain-source ON-resistance: RDS (ON) = 0.9 ?(typ.) • High forward transfer admittance: |Yfs| = 3.0 S (typ.) • Low leakage current: IDSS = 10 ?A (max) (VDS = 550 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 1.14 ± 0.15 0.69 ± 0.15 Absolute Maximum Ratings (Ta = 25°C) M A Ô0.2 2.54 2.54 Characteristics Symbol Rating Unit 1 2 3 Drain-source voltage VDSS 550 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 7.5 1: Gate Drain current A 2: Drain Pulse (t = 1 ms) IDP 30 3: Source (Note 1) Drain power dissipation (Tc = 25°C) PD 40 W JEDEC ? Single pulse avalanche energy EAS 163 mJ JEITA SC-67 (Note 2) Avalanche current IAR 7.5 A TOSHIBA 2-10U1B Repetitive avalanche energy (Note 3) EAR 4.0 mJ Weight: 1.7 g (typ.) Channel temperature Tch 150

See also transistors datasheet: TK80F08K3 , TK80S04K3L , TK80S06K3L , TK80X04K3 , TK8A10K3 , TK8A25DA , TK8A45DA , TK8A45D , BF961 , TK8A50D , TK8A55DA , TK8A60DA , TK8A65D , TK8P25DA , TK8S06K3L , TK9A45D , TK9A55DA .

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