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TPCC8093 MOSFET (IC) Datasheet. Cross Reference Search. TPCC8093 Equivalent

Type Designator: TPCC8093

Type of TPCC8093 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 30

Maximum drain-source voltage |Uds|, V: 20

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 21

Maximum junction temperature (Tj), °C:

Rise Time of TPCC8093 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0058

Package: TSON_Advance

TPCC8093 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

TPCC8093 PDF doc:

4.1. tpcc8006-h.pdf Size:190K _toshiba2

TPCC8093
TPCC8093

TPCC8006-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPCC8006-H High-Efficiency DC-DC Converter Applications Unit: mm Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 7.4 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 6.5

4.2. tpcc8065-h_en_datasheet_110602.pdf Size:227K _toshiba2

TPCC8093
TPCC8093

TPCC8065-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPCC8065-H TPCC8065-H TPCC8065-H TPCC8065-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 4.3 nC (typ.) (4) Low drai

4.3. tpcc8067-h_en_datasheet_110602.pdf Size:234K _toshiba2

TPCC8093
TPCC8093

TPCC8067-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPCC8067-H TPCC8067-H TPCC8067-H TPCC8067-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 1.9 nC (typ.) (4) Low drai

4.4. tpcc8068-h_en_datasheet_110809.pdf Size:228K _toshiba2

TPCC8093
TPCC8093

TPCC8068-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPCC8068-H TPCC8068-H TPCC8068-H TPCC8068-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 3.3 nC (typ.) (4) Low drai

4.5. tpcc8062-h_en_datasheet_110602.pdf Size:415K _toshiba2

TPCC8093
TPCC8093

TPCC8062-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPCC8062-H TPCC8062-H TPCC8062-H TPCC8062-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 7.4 nC (typ.) (4) Low drai

4.6. tpcc8005-h.pdf Size:175K _toshiba2

TPCC8093
TPCC8093

TPCC8005-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPCC8005-H High-Efficiency DC-DC Converter Applications Unit: mm Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 9.1 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 5.2

4.7. tpcc8076_en_datasheet_110606.pdf Size:239K _toshiba2

TPCC8093
TPCC8093

TPCC8076 MOSFETs Silicon N-Channel MOS (U-MOS?) TPCC8076 TPCC8076 TPCC8076 TPCC8076 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.7 m? (typ.) (VGS

4.8. tpcc8066-h_en_datasheet_110617.pdf Size:247K _toshiba2

TPCC8093
TPCC8093

TPCC8066-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPCC8066-H TPCC8066-H TPCC8066-H TPCC8066-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 3.2 nC (typ.) (4) Low drai

4.9. tpcc8002-h.pdf Size:176K _toshiba2

TPCC8093
TPCC8093

TPCC8002-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H) TPCC8002-H High-Efficiency DC-DC Converter Applications Unit: mm Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 7.1 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 7.6

4.10. tpcc8073_en_datasheet_110602.pdf Size:233K _toshiba2

TPCC8093
TPCC8093

TPCC8073 MOSFETs Silicon N-Channel MOS (U-MOS?) TPCC8073 TPCC8073 TPCC8073 TPCC8073 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.6 m? (typ

4.11. tpcc8084_en_datasheet_110607.pdf Size:237K _toshiba2

TPCC8093
TPCC8093

TPCC8084 MOSFETs Silicon N-Channel MOS (U-MOS?) TPCC8084 TPCC8084 TPCC8084 TPCC8084 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 5.2 m? (typ.) (VGS

4.12. tpcc8074_en_datasheet_110719.pdf Size:230K _toshiba2

TPCC8093
TPCC8093

TPCC8074 MOSFETs Silicon N-Channel MOS (U-MOS?) TPCC8074 TPCC8074 TPCC8074 TPCC8074 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switchings Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 4.9 m? (t

4.13. tpcc8007_en_datasheet_110609.pdf Size:227K _toshiba2

TPCC8093
TPCC8093

TPCC8007 MOSFETs Silicon N-channel MOS (U-MOS?) TPCC8007 TPCC8007 TPCC8007 TPCC8007 1. Applications 1. Applications 1. Applications 1. Applications Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.5 m? (typ.) (VGS = 4.5 V) (3) Low leakage current: ID

4.14. tpcc8001-h.pdf Size:176K _toshiba2

TPCC8093
TPCC8093

TPCC8001-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H) TPCC8001-H High-Efficiency DC-DC Converter Applications Unit: mm Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 7.1 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 7.6

4.15. tpcc8003-h.pdf Size:217K _toshiba2

TPCC8093
TPCC8093

TPCC8003-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPCC8003-H High-Efficiency DC-DC Converter Applications Unit: mm Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 4.2 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 14.3

4.16. tpcc8064-h_en_datasheet_110602.pdf Size:351K _toshiba2

TPCC8093
TPCC8093

TPCC8064-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPCC8064-H TPCC8064-H TPCC8064-H TPCC8064-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 5.0 nC (typ.) (4) Low drai

See also transistors datasheet: TPCC8065-H , TPCC8066-H , TPCC8067-H , TPCC8068-H , TPCC8073 , TPCC8074 , TPCC8076 , TPCC8084 , IRF9540N , TPCC8103 , TPCC8104 , TPCC8105 , TPCC8131 , TPCC8A01-H , TPCF8002 , TPCF8003 , TPCF8004 .

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