MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
TPCC8093
  TPCC8093
  TPCC8093
 
TPCC8093
  TPCC8093
  TPCC8093
 
TPCC8093
  TPCC8093
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AP10N70P-A
AP10N70R-A ..AP2R403AGMT-HF
AP2R403GMT-HF ..AP4533GEM-HF
AP4537GYT-HF ..AP92T03GP-HF
AP92T03GS-HF ..AP98T06GI-HF
AP98T06GP ..APT10088HVR
APT10M07JVR ..AUIRF2907Z
AUIRF2907ZS-7P ..AUIRLR2703
AUIRLR2905 ..BLD6G21L-50
BLD6G21LS-50 ..BS107PT
BS108 ..BSP322P
BSP603S2L ..BUK6228-55C
BUK6246-75C ..BUK7Y20-30B
BUK7Y25-40B ..BUZ326
BUZ32H ..CED04N7G
CED05N65 ..CEM9435A
CEM9436A ..CEU83A3
CEU83A3G ..DMP2004TK
DMP2004VK ..FCP9N60N
FCP9N60N ..FDC86244
FDD050N03B ..FDMA0104
FDMA1023PZ ..FDMS8026S
FDMS8027S ..FDPF39N20
FDPF39N20 ..FDS8928A
FDS8934A ..FQAF13N80
FQAF16N50 ..FQP6N80C
FQP6N90C ..FRL230R4
FRL234D ..GWM100-0085X1-SL
GWM100-0085X1-SL ..HAT1023R
HAT1024R ..HAT3018R
HAT3019R ..HUFA76413DK8T_F085
HUFA76419D3S ..IPB65R660CFD
IPB70N04S3-07 ..IPI04CN10NG
IPI052NE7N3G ..IPP50R520CP
IPP530N15N3G ..IRCZ345
IRCZ445 ..IRF543
IRF543FI ..IRF7314
IRF7314Q ..IRF8313
IRF831FI ..IRFBC40AS
IRFBC40L ..IRFIZ34A
IRFIZ34E ..IRFPC40
IRFPC48 ..IRFS4410
IRFS4410Z ..IRFU220
IRFU220A ..IRL3302
IRL3302S ..IRLR3915
IRLR6225 ..IXFC60N20
IXFC74N20P ..IXFK180N085
IXFK180N10 ..IXFN44N50
IXFN44N50Q ..IXFT52N50P2
IXFT58N20 ..IXTA110N055T7
IXTA120N04T2 ..IXTH1N250
IXTH200N075T ..IXTN22N100L
IXTN30N100L ..IXTQ26N60P
IXTQ26P20P ..IXTY48P05T
IXTY4N60P ..KHB8D8N25F2
KHB8D8N25P ..KP780V9
KP784A ..MTB04N03J3
MTB04N03Q8 ..NDP6030L
NDP6030PL ..NTLJD3115P
NTLJD3119C ..PHB6N50E
PHB6N60E ..PMV65XP
PMZ1000UN ..R5019ANX
R5021ANX ..RFP8N20L
RFP8P05 ..RJK5033DPD
RJK5033DPP-M0 ..RUR040N02
RUU002N05 ..SE2306
SE2312 ..SIF160N040
SIF18N65C ..SML20B56
SML20B67 ..SPA06N60C3
SPA06N80C3 ..SSDF9504
SSE110N03-03P ..SSM3J16TE
SSM3J304T ..SSM6P05FU
SSM6P09FU ..STB230NH03L
STB23NM50N ..STD4N25T4
STD4N52K3 ..STF9NK60ZD
STF9NK90Z ..STN3NF06L
STN3PF06 ..STP42N65M5
STP45NF06 ..STS4NF100
STS5DNF20V ..STW9NK90Z
STY112N65M5 ..TK4A60DB
TK4A65DA ..TPC8207
TPC8208 ..TPCS8210
TPCS8211 ..UTT36N05
UTT36N10 ..ZXMN10A11G
ZXMN10A11K ..ZXMS6006SG
 
TPCC8093 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

TPCC8093 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: TPCC8093

Type of TPCC8093 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 30

Maximum drain-source voltage |Uds|, V: 20

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 21

Maximum junction temperature (Tj), °C:

Rise Time of TPCC8093 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0058

Package: TSON_Advance

Equivalent transistors for TPCC8093

TPCC8093 PDF doc:

4.1. tpcc8066-h_en_datasheet_110617.pdf Size:247K _toshiba2

TPCC8093
TPCC8093
TPCC8066-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPCC8066-H TPCC8066-H TPCC8066-H TPCC8066-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 3.2 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 15 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 ľA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 2011-06-17 1 Rev.3.0 TPCC8066-H 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings

4.2. tpcc8067-h_en_datasheet_110602.pdf Size:234K _toshiba2

TPCC8093
TPCC8093
TPCC8067-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPCC8067-H TPCC8067-H TPCC8067-H TPCC8067-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 1.9 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 26 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 ľA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 2011-06-02 1 Rev.2.0 TPCC8067-H 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings

4.3. tpcc8064-h_en_datasheet_110602.pdf Size:351K _toshiba2

TPCC8093
TPCC8093
TPCC8064-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPCC8064-H TPCC8064-H TPCC8064-H TPCC8064-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 5.0 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 7.9 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 ľA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 2011-06-02 1 Rev.2.0 TPCC8064-H 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings

4.4. tpcc8084_en_datasheet_110607.pdf Size:237K _toshiba2

TPCC8093
TPCC8093
TPCC8084 MOSFETs Silicon N-Channel MOS (U-MOS?) TPCC8084 TPCC8084 TPCC8084 TPCC8084 1. Applications 1. Applications 1. Applications 1. Applications • Lithium-Ion Secondary Batteries • Notebook PCs • Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 5.2 m? (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 ľA (max) (VDS = 33 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25?

4.5. tpcc8062-h_en_datasheet_110602.pdf Size:415K _toshiba2

TPCC8093
TPCC8093
TPCC8062-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPCC8062-H TPCC8062-H TPCC8062-H TPCC8062-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 7.4 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 5.4 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 ľA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 2011-06-02 1 Rev.3.0 TPCC8062-H 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings

4.6. tpcc8073_en_datasheet_110602.pdf Size:233K _toshiba2

TPCC8093
TPCC8093
TPCC8073 MOSFETs Silicon N-Channel MOS (U-MOS?) TPCC8073 TPCC8073 TPCC8073 TPCC8073 1. Applications 1. Applications 1. Applications 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches • Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.6 m? (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 ľA (max) (VDS = 30 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (

4.7. tpcc8074_en_datasheet_110719.pdf Size:230K _toshiba2

TPCC8093
TPCC8093
TPCC8074 MOSFETs Silicon N-Channel MOS (U-MOS?) TPCC8074 TPCC8074 TPCC8074 TPCC8074 1. Applications 1. Applications 1. Applications 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switchings • Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 4.9 m? (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 ľA (max) (VDS = 30 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note)

4.8. tpcc8068-h_en_datasheet_110809.pdf Size:228K _toshiba2

TPCC8093
TPCC8093
TPCC8068-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPCC8068-H TPCC8068-H TPCC8068-H TPCC8068-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 3.3 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 12 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 ľA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 2011-08-09 1 Rev.1.0 TPCC8068-H 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings

4.9. tpcc8065-h_en_datasheet_110602.pdf Size:227K _toshiba2

TPCC8093
TPCC8093
TPCC8065-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPCC8065-H TPCC8065-H TPCC8065-H TPCC8065-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 4.3 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 11.7 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 ľA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 2011-06-02 1 Rev.2.0 TPCC8065-H 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Rating

4.10. tpcc8076_en_datasheet_110606.pdf Size:239K _toshiba2

TPCC8093
TPCC8093
TPCC8076 MOSFETs Silicon N-Channel MOS (U-MOS?) TPCC8076 TPCC8076 TPCC8076 TPCC8076 1. Applications 1. Applications 1. Applications 1. Applications • Lithium-Ion Secondary Batteries • Notebook PCs • Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.7 m? (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 ľA (max) (VDS = 33 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1,2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25?

4.11. tpcc8007_en_datasheet_110609.pdf Size:227K _toshiba2

TPCC8093
TPCC8093
TPCC8007 MOSFETs Silicon N-channel MOS (U-MOS?) TPCC8007 TPCC8007 TPCC8007 TPCC8007 1. Applications 1. Applications 1. Applications 1. Applications • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.5 m? (typ.) (VGS = 4.5 V) (3) Low leakage current: IDSS = 10 ľA (max) (VDS = 20 V) (4) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) Characte

See also transistors datasheet: TPCC8065-H , TPCC8066-H , TPCC8067-H , TPCC8068-H , TPCC8073 , TPCC8074 , TPCC8076 , TPCC8084 , IRF9540N , TPCC8103 , TPCC8104 , TPCC8105 , TPCC8131 , TPCC8A01-H , TPCF8002 , TPCF8003 , TPCF8004 .

Keywords

 TPCC8093 Datasheet  TPCC8093 Datenblatt  TPCC8093 RoHS  TPCC8093 Distributor
 TPCC8093 Application Notes  TPCC8093 Component  TPCC8093 Circuit  TPCC8093 Schematic
 TPCC8093 Equivalent  TPCC8093 Cross Reference  TPCC8093 Data Sheet  TPCC8093 Fiche Technique

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