MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
TPCC8093
  TPCC8093
  TPCC8093
 
TPCC8093
  TPCC8093
  TPCC8093
 
TPCC8093
  TPCC8093
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123N3
BSS123W ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FDB150N10
FDB15N50 ..FDD86102
FDD86102LZ ..FDMS7698
FDMS7700S ..FDS3590
FDS3672 ..FK18SM-10
FK18SM-12 ..FQP14N30
FQP16N25 ..FRE264R
FRE460D ..FSL23AOD
FSL23AOR ..H7N0311LS
H7N0312AB ..HAT2184WP
HAT2185WP ..HUF76129S3S
HUF76131SK8 ..IPB120N06S4-02
IPB120N06S4-03 ..IPD60R520CP
IPD60R600C6 ..IPP072N10N3G
IPP075N15N3G ..IRC130
IRC140 ..IRF3711ZCS
IRF3711ZL ..IRF6722M
IRF6722S ..IRF7751G
IRF7752 ..IRFB31N20D
IRFB3206 ..IRFI4227
IRFI4229 ..IRFP350A
IRFP350FI ..IRFS151
IRFS152 ..IRFSL3306
IRFSL33N15D ..IRFZ34
IRFZ34A ..IRLL024Z
IRLL110 ..ITF87072DK8T
IXBH15N140 ..IXFH50N60P3
IXFH52N30P ..IXFN100N10S3
IXFN100N20 ..IXFR4N100Q
IXFR50N50 ..IXFX48N55
IXFX48N60P ..IXTC230N085T
IXTC240N055T ..IXTK120N25
IXTK120N25P ..IXTP5N50P
IXTP5N60P ..IXTV200N10T
IXTV200N10TS ..KF60N06P
KF6N60D ..KP727A
KP727B ..MMBF4093
MMBF4117 ..MTD3055V
MTD3055VL ..MTN5N50FP
MTN5N50I3 ..NDD02N60Z
NDD03N50Z ..NTF3055-100
NTF3055L108 ..OM11N60SA
OM1N100SA ..PMGD780SN
PMGD8000LN ..PSMN6R0-30YLB
PSMN6R5-25YLC ..RFG60P03
RFG60P05E ..RJK1555DPA
RJK1557DPA ..RSM002N06
RSM002P03 ..SDF320JAA
SDF320JAB ..SFW9644
SFW9Z14 ..SMK0765F
SMK0765FJ ..SML601R6KN
SML6030BN ..SPD09P06PLG
SPD15P10PG ..SSG4530C
SSG4536C ..SSM3K16CT
SSM3K16FS ..SSP7462N
SSP7464N ..STB70NFS03L
STB75NF20 ..STD6N10-1
STD6N10T4 ..STH10NA50FI
STH12N60 ..STM4470A
STM4470E ..STP22NM60N
STP22NS25Z ..STP75NF68
STP75NF75 ..STT3981
STT3998N ..STW13NK100Z
STW13NK50Z ..TK15A50D
TK15A60D ..TPC8034-H
TPC8035-H ..TPCC8131
TPCC8A01-H ..UT50N03
UT5504 ..ZVN4525E6
ZVN4525G ..ZXMS6006SG
 
TPCC8093 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

TPCC8093 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: TPCC8093

Type of TPCC8093 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 30

Maximum drain-source voltage |Uds|, V: 20

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 21

Maximum junction temperature (Tj), °C:

Rise Time of TPCC8093 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0058

Package: TSON_Advance

Equivalent transistors for TPCC8093

TPCC8093 PDF doc:

4.1. tpcc8066-h_en_datasheet_110617.pdf Size:247K _toshiba2

TPCC8093
TPCC8093
TPCC8066-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPCC8066-H TPCC8066-H TPCC8066-H TPCC8066-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 3.2 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 15 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 ľA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 2011-06-17 1 Rev.3.0 TPCC8066-H 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings

4.2. tpcc8067-h_en_datasheet_110602.pdf Size:234K _toshiba2

TPCC8093
TPCC8093
TPCC8067-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPCC8067-H TPCC8067-H TPCC8067-H TPCC8067-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 1.9 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 26 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 ľA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 2011-06-02 1 Rev.2.0 TPCC8067-H 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings

4.3. tpcc8064-h_en_datasheet_110602.pdf Size:351K _toshiba2

TPCC8093
TPCC8093
TPCC8064-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPCC8064-H TPCC8064-H TPCC8064-H TPCC8064-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 5.0 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 7.9 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 ľA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 2011-06-02 1 Rev.2.0 TPCC8064-H 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings

4.4. tpcc8084_en_datasheet_110607.pdf Size:237K _toshiba2

TPCC8093
TPCC8093
TPCC8084 MOSFETs Silicon N-Channel MOS (U-MOS?) TPCC8084 TPCC8084 TPCC8084 TPCC8084 1. Applications 1. Applications 1. Applications 1. Applications • Lithium-Ion Secondary Batteries • Notebook PCs • Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 5.2 m? (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 ľA (max) (VDS = 33 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25?

4.5. tpcc8062-h_en_datasheet_110602.pdf Size:415K _toshiba2

TPCC8093
TPCC8093
TPCC8062-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPCC8062-H TPCC8062-H TPCC8062-H TPCC8062-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 7.4 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 5.4 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 ľA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 2011-06-02 1 Rev.3.0 TPCC8062-H 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings

4.6. tpcc8073_en_datasheet_110602.pdf Size:233K _toshiba2

TPCC8093
TPCC8093
TPCC8073 MOSFETs Silicon N-Channel MOS (U-MOS?) TPCC8073 TPCC8073 TPCC8073 TPCC8073 1. Applications 1. Applications 1. Applications 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches • Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.6 m? (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 ľA (max) (VDS = 30 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (

4.7. tpcc8074_en_datasheet_110719.pdf Size:230K _toshiba2

TPCC8093
TPCC8093
TPCC8074 MOSFETs Silicon N-Channel MOS (U-MOS?) TPCC8074 TPCC8074 TPCC8074 TPCC8074 1. Applications 1. Applications 1. Applications 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switchings • Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 4.9 m? (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 ľA (max) (VDS = 30 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note)

4.8. tpcc8068-h_en_datasheet_110809.pdf Size:228K _toshiba2

TPCC8093
TPCC8093
TPCC8068-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPCC8068-H TPCC8068-H TPCC8068-H TPCC8068-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 3.3 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 12 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 ľA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 2011-08-09 1 Rev.1.0 TPCC8068-H 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings

4.9. tpcc8065-h_en_datasheet_110602.pdf Size:227K _toshiba2

TPCC8093
TPCC8093
TPCC8065-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPCC8065-H TPCC8065-H TPCC8065-H TPCC8065-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 4.3 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 11.7 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 ľA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 2011-06-02 1 Rev.2.0 TPCC8065-H 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Rating

4.10. tpcc8076_en_datasheet_110606.pdf Size:239K _toshiba2

TPCC8093
TPCC8093
TPCC8076 MOSFETs Silicon N-Channel MOS (U-MOS?) TPCC8076 TPCC8076 TPCC8076 TPCC8076 1. Applications 1. Applications 1. Applications 1. Applications • Lithium-Ion Secondary Batteries • Notebook PCs • Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.7 m? (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 ľA (max) (VDS = 33 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1,2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25?

4.11. tpcc8007_en_datasheet_110609.pdf Size:227K _toshiba2

TPCC8093
TPCC8093
TPCC8007 MOSFETs Silicon N-channel MOS (U-MOS?) TPCC8007 TPCC8007 TPCC8007 TPCC8007 1. Applications 1. Applications 1. Applications 1. Applications • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.5 m? (typ.) (VGS = 4.5 V) (3) Low leakage current: IDSS = 10 ľA (max) (VDS = 20 V) (4) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) Characte

See also transistors datasheet: TPCC8065-H , TPCC8066-H , TPCC8067-H , TPCC8068-H , TPCC8073 , TPCC8074 , TPCC8076 , TPCC8084 , IRF9540N , TPCC8103 , TPCC8104 , TPCC8105 , TPCC8131 , TPCC8A01-H , TPCF8002 , TPCF8003 , TPCF8004 .

Keywords

 TPCC8093 Datasheet  TPCC8093 Datenblatt  TPCC8093 RoHS  TPCC8093 Distributor
 TPCC8093 Application Notes  TPCC8093 Component  TPCC8093 Circuit  TPCC8093 Schematic
 TPCC8093 Equivalent  TPCC8093 Cross Reference  TPCC8093 Data Sheet  TPCC8093 Fiche Technique

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