MOSFET Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
TPCC8093
  TPCC8093
  TPCC8093
  TPCC8093
 
TPCC8093
  TPCC8093
  TPCC8093
  TPCC8093
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553L
2SJ553S ..2SK1516
2SK1517 ..2SK2136
2SK2137 ..2SK2735
2SK2735L ..2SK3125
2SK3126 ..2SK357
2SK3582CT ..2SK4195LS
2SK4196LS ..3N159
3N161 ..40821
40822 ..AO4496
AO4498 ..AOC2423
AOC2800 ..AON2701
AON2705 ..AON7752
AON7754 ..AOU4N60
AOU4S60 ..AP13P15GP-HF
AP13P15GS-HF ..AP30T10GP-HF
AP30T10GS-HF ..AP4800AGM-HF
AP4800BGM-HF ..AP9408AGH
AP9408AGI ..AP9930AGM
AP9930GM-HF ..APT1004RGN
APT1004RKN ..APT50M50L2LL
APT50M50PVR ..AUIRF3710ZS
AUIRF3805 ..AUIRLR3915
AUIRLS3034 ..BLF202
BLF2043F ..BSB028N06NN3G
BSB053N03LPG ..BSS123
BSS123A ..BUK653R7-30C
BUK654R0-75C ..BUK9217-75B
BUK9219-55A ..BUZ50A-TO220M
BUZ50ASM ..CED20P10
CED21A2 ..CEP02N7G
CEP02N9 ..CPH3355
CPH3356 ..DMP210DUDJ
DMP210DUFB4 ..FCP9N60N
FCPF11N60 ..FDC642P_F085
FDC645N ..FDM3622
FDM47-06KC5 ..FDMS7608S
FDMS7620S ..FDP8860
FDP8870 ..FDS8926A
FDS8928A ..FQB1P50
FQB22P10 ..FQPF3N25
FQPF3N80C ..FRS240R
FRS244D ..H5N2008P
H5N2301PF ..HAT2080R
HAT2080T ..HUF75332S3S
HUF75333G3 ..IPB022N04LG
IPB023N04NG ..IPD14N06S2-80
IPD15N06S2L-64 ..IPI80N04S3-06
IPI80N04S3-H4 ..IPP90R1K0C3
IPP90R1K2C3 ..IRF2807
IRF2807L ..IRF644
IRF644A ..IRF7450
IRF7451 ..IRF9533
IRF9540 ..IRFH3702
IRFH3707 ..IRFP140
IRFP1405 ..IRFR3411
IRFR3504Z ..IRFS750A
IRFS820 ..IRFW520A
IRFW530A ..IRL8113
IRL8113L ..IRLU3717
IRLU3802 ..IXFH16N120P
IXFH16N50P ..IXFK64N50Q3
IXFK64N60P ..IXFP8N50PM
IXFQ10N80P ..IXFV74N20PS
IXFV96N15P ..IXTA32P20T
IXTA36N30P ..IXTH41N25
IXTH420N04T2 ..IXTP1R4N120P
IXTP1R4N60P ..IXTT16N10D2
IXTT16N20D2 ..JFTJ105
K1109 ..KMB7D0DN40Q
KMB7D0DN40QA ..KU310N10P
KU390N10P ..MTB3D0N03ATH8
MTB40N06E3 ..MTN2510LE3
MTN2510LJ3 ..MTP6405N6
MTP658G6 ..NTD20N03L27
NTD20N06 ..NTR4501
NTR4502P ..PHT6N03LT
PHT6N06LT ..PSMN1R2-30YLC
PSMN1R3-30YL ..RF1S530SM
RF1S540SM ..RJK03E5DPA
RJK03E6DPA ..RQJ0602EGDQS
RQJ0603LGDQA ..SDF08N50
SDF08N60 ..SFP9Z34
SFR2955 ..SMG2306NE
SMG2310A ..SML40J93
SML40L57 ..SPA08N80C3
SPA11N60C3 ..SSDF9504
SSE110N03-03P ..SSM3J16TE
SSM3J304T ..SSM6P05FU
SSM6P09FU ..STB19NF20
STB200N4F3 ..STD3N25-1
STD3N25T4 ..STF26NM60N
STF28NM50N ..STK830P
STK900 ..STP14NK50Z
STP14NK60Z ..STP5N30LFI
STP5N50 ..STS4DNFS30L
STS4DPF20L ..STU616S
STU618S ..TF252TH
TF256 ..TK80S04K3L
TK80S06K3L ..TPCA8046-H
TPCA8047-H ..UP672
UP9971 ..WTC2305
WTC2305DS ..ZXMP10A16K
ZXMP10A17E6 ..ZXMS6006SG
 
TPCC8093 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

TPCC8093 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: TPCC8093

Type of TPCC8093 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 30

Maximum drain-source voltage |Uds|, V: 20

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 21

Maximum junction temperature (Tj), °C:

Rise Time of TPCC8093 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0058

Package: TSON_Advance

Equivalent transistors for TPCC8093 - Cross-Reference Search

TPCC8093 PDF doc:

4.1. tpcc8066-h_en_datasheet_110617.pdf Size:247K _toshiba2

TPCC8093
TPCC8093
TPCC8066-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPCC8066-H TPCC8066-H TPCC8066-H TPCC8066-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 3.2 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 15 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 ľA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 2011-06-17 1 Rev.3.0 TPCC8066-H 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings

4.2. tpcc8067-h_en_datasheet_110602.pdf Size:234K _toshiba2

TPCC8093
TPCC8093
TPCC8067-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPCC8067-H TPCC8067-H TPCC8067-H TPCC8067-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 1.9 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 26 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 ľA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 2011-06-02 1 Rev.2.0 TPCC8067-H 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings

4.3. tpcc8064-h_en_datasheet_110602.pdf Size:351K _toshiba2

TPCC8093
TPCC8093
TPCC8064-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPCC8064-H TPCC8064-H TPCC8064-H TPCC8064-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 5.0 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 7.9 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 ľA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 2011-06-02 1 Rev.2.0 TPCC8064-H 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings

4.4. tpcc8084_en_datasheet_110607.pdf Size:237K _toshiba2

TPCC8093
TPCC8093
TPCC8084 MOSFETs Silicon N-Channel MOS (U-MOS?) TPCC8084 TPCC8084 TPCC8084 TPCC8084 1. Applications 1. Applications 1. Applications 1. Applications • Lithium-Ion Secondary Batteries • Notebook PCs • Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 5.2 m? (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 ľA (max) (VDS = 33 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25?

4.5. tpcc8062-h_en_datasheet_110602.pdf Size:415K _toshiba2

TPCC8093
TPCC8093
TPCC8062-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPCC8062-H TPCC8062-H TPCC8062-H TPCC8062-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 7.4 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 5.4 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 ľA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 2011-06-02 1 Rev.3.0 TPCC8062-H 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings

4.6. tpcc8073_en_datasheet_110602.pdf Size:233K _toshiba2

TPCC8093
TPCC8093
TPCC8073 MOSFETs Silicon N-Channel MOS (U-MOS?) TPCC8073 TPCC8073 TPCC8073 TPCC8073 1. Applications 1. Applications 1. Applications 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches • Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.6 m? (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 ľA (max) (VDS = 30 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (

4.7. tpcc8074_en_datasheet_110719.pdf Size:230K _toshiba2

TPCC8093
TPCC8093
TPCC8074 MOSFETs Silicon N-Channel MOS (U-MOS?) TPCC8074 TPCC8074 TPCC8074 TPCC8074 1. Applications 1. Applications 1. Applications 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switchings • Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 4.9 m? (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 ľA (max) (VDS = 30 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note)

4.8. tpcc8068-h_en_datasheet_110809.pdf Size:228K _toshiba2

TPCC8093
TPCC8093
TPCC8068-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPCC8068-H TPCC8068-H TPCC8068-H TPCC8068-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 3.3 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 12 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 ľA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 2011-08-09 1 Rev.1.0 TPCC8068-H 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings

4.9. tpcc8065-h_en_datasheet_110602.pdf Size:227K _toshiba2

TPCC8093
TPCC8093
TPCC8065-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPCC8065-H TPCC8065-H TPCC8065-H TPCC8065-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 4.3 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 11.7 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 ľA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 2011-06-02 1 Rev.2.0 TPCC8065-H 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Rating

4.10. tpcc8076_en_datasheet_110606.pdf Size:239K _toshiba2

TPCC8093
TPCC8093
TPCC8076 MOSFETs Silicon N-Channel MOS (U-MOS?) TPCC8076 TPCC8076 TPCC8076 TPCC8076 1. Applications 1. Applications 1. Applications 1. Applications • Lithium-Ion Secondary Batteries • Notebook PCs • Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.7 m? (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 ľA (max) (VDS = 33 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1,2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25?

4.11. tpcc8007_en_datasheet_110609.pdf Size:227K _toshiba2

TPCC8093
TPCC8093
TPCC8007 MOSFETs Silicon N-channel MOS (U-MOS?) TPCC8007 TPCC8007 TPCC8007 TPCC8007 1. Applications 1. Applications 1. Applications 1. Applications • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.5 m? (typ.) (VGS = 4.5 V) (3) Low leakage current: IDSS = 10 ľA (max) (VDS = 20 V) (4) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) Characte

See also transistors datasheet: TPCC8065-H , TPCC8066-H , TPCC8067-H , TPCC8068-H , TPCC8073 , TPCC8074 , TPCC8076 , TPCC8084 , IRF9540N , TPCC8103 , TPCC8104 , TPCC8105 , TPCC8131 , TPCC8A01-H , TPCF8002 , TPCF8003 , TPCF8004 .

Keywords

 TPCC8093 Datasheet  TPCC8093 Datenblatt  TPCC8093 RoHS  TPCC8093 Distributor
 TPCC8093 Application Notes  TPCC8093 Component  TPCC8093 Circuit  TPCC8093 Schematic
 TPCC8093 Equivalent  TPCC8093 Cross Reference  TPCC8093 Data Sheet  TPCC8093 Fiche Technique

 

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