2SK1529 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2SK1529

Type of 2SK1529 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 120

Maximum drain-source voltage |Uds|, V: 180V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 10

Maximum junction temperature (Tj), °C:

Rise Time of 2SK1529 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm:

Package: TO3P(N)

Equivalent transistors for 2SK1529

2SK1529 PDF documents for downloads:

1.1. 2sk1529.pdf Size:287K _toshiba

2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : |Y | = 4.0 S (typ.) fs Complementary to 2SJ200 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 180 V Gate-source voltage VGSS ±20 V Drain current (Note 1) ID 10 A Drain power dissipation (Tc = 25°C) PD 120 W Channel temperature Tc 150 °C Storage temperature range Tstg -55~150 °C 1. GATE 2. DRAIN (HEAT SINK) Marking 3. SOURCE JEDEC ? ? Lot Number Type K1529 JEITA ? Month (starting from alphabet A) ? TOSHIBA 2-16C1B Year (last number of Weight: 4.6 g (typ.) the christian era) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain cut-off current IDSS VDS = 180 V, VGS = 0 — — 1.0 mA Gate leakage current IGSS VDS = 0, VGS = ±20 V — — ±0.5 µA Drain-sour

4.1. 2sk1526.pdf Size:83K _renesas

2SK1526, 2SK1527 Silicon N Channel MOS FET REJ03G0950-0200 (Previous: ADE-208-1290) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL) D G 1. Gate 2. Drain 3. Source S 1 2 3 Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1526, 2SK1527 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage 2SK1526 VDSS 450 V 2SK1527 500 Gate to source voltage VGSS ±30 V Drain current I 40 A D Drain peak current ID(pulse)*1 160 A Body to drain diode reverse drain current I 40 A DR Channel dissipation Pch*2 250 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ? 10 µs, duty cycle ? 1% 2. Value at T = 25°C C Electrical Characteristics (Ta = 25°C) Item S

4.2. rej03g0950_2sk1526ds.pdf Size:116K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular

4.3. rej03g0951_2sk1528lsds.pdf Size:108K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular

4.4. rej03g0949_2sk1521ds.pdf Size:117K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular

4.5. 2sk1521.pdf Size:83K _renesas

2SK1521, 2SK1522 Silicon N Channel MOS FET REJ03G0949-0200 (Previous: ADE-208-1289) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL) D G 1. Gate 2. Drain 3. Source S 1 2 3 Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1521, 2SK1522 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage 2SK1521 VDSS 450 V 2SK1522 500 Gate to source voltage VGSS ±30 V Drain current I 50 A D Drain peak current ID(pulse)*1 200 A Body to drain diode reverse drain current I 50 A DR Channel dissipation Pch*2 250 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ? 10 µs, duty cycle ? 1% 2. Value at T = 25°C C Electrical Charact

4.6. 2sk1528.pdf Size:96K _renesas

2SK1528(L), 2SK1528(S) Silicon N Channel MOS FET REJ03G0951-0200 (Previous: ADE-208-1291) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(L)) (Package name: LDPAK(S)-(1)) 4 D 4 1. Gate G 2. Drain 3. Source 4. Drain 1 2 3 1 2 S 3 Rev.2.00 Sep 07, 2005 page 1 of 7 2SK1528(L), 2SK1528(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 900 V Gate to source voltage V ±30 V GSS Drain current ID 4 A *1 Drain peak current I 10 A D(pulse) Body to drain diode reverse drain current IDR 4 A Channel dissipation Pch*2 60 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ? 10 µs, duty cycle ? 1%

See also transistors datasheet: 2SJ620 , 2SJ669 , 2SJ676 , 2SK1119 , 2SK1120 , 2SK1381 , 2SK1382 , 2SK1486 , J111 , 2SK1530 , 2SK1544 , 2SK1930 , 2SK2013 , 2SK2162 , 2SK2173 , 2SK2200 , 2SK2201 .

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