MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
2SK3568
  2SK3568
  2SK3568
 
2SK3568
  2SK3568
  2SK3568
 
2SK3568
  2SK3568
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123W
BSS123Z ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FCPF22N60NT
FCPF260N60E ..FDD13AN06A0_F085
FDD13AN06_F085 ..FDMA7630
FDMA7632 ..FDMS8320L
FDMS8320LDC ..FDPF16N50
FDPF16N50T ..FDSS2407
FDT1600N10ALZ ..FQB9P25
FQD10N20C ..FQS4900
FQS4901 ..FRX130R2
FRX130R3 ..H5N5004PL
H5N5005PL ..HAT2160H
HAT2160N ..HUF75637S3S
HUF75639G3 ..IPB065N03LG
IPB065N06LG ..IPD350N06LG
IPD35N10S3L-26 ..IPP028N08N3G
IPP030N10N3G ..IPW50R399CP
IPW60R041C6 ..IRF350
IRF3515L ..IRF6633A
IRF6635 ..IRF7509
IRF7509(N) ..IRF9953
IRF9956 ..IRFH7911
IRFH7914 ..IRFP244A
IRFP245 ..IRFR9010
IRFR9012 ..IRFS9243
IRFS9520 ..IRFY140C
IRFY240 ..IRLI2203N
IRLI2505 ..IRLZ24
IRLZ24A ..IXFH26N50Q
IXFH26N55Q ..IXFL40N110P
IXFL44N100P ..IXFR21N100Q
IXFR230N20T ..IXFX230N20T
IXFX240N15T2 ..IXTA70N075T2
IXTA70N085T ..IXTH67N10MB
IXTH68N20 ..IXTP30N08MA
IXTP30N08MB ..IXTT68P20T
IXTT69N30P ..KF3N60F
KF3N60I ..KP501V
KP502A ..MCH6421
MCH6431 ..MTBA5N10V8
MTBA5Q10Q8 ..MTN351AN3
MTN35N03J3 ..NDB6030
NDB6030L ..NTD4963N
NTD4965N ..NVD5863NL
NVD5865NL ..PMBFJ110
PMBFJ111 ..PSMN3R7-25YLC
PSMN3R7-30YLC ..RFD3055LE
RFD3055LESM ..RJK1008DPN
RJK1008DPP ..RSD050N06
RSD050N10 ..SDF150JAA
SDF150JAB ..SFT1446
SFT1450 ..SMG3402
SMG3403 ..SML50H24
SML50J44 ..SPB80P06PG
SPD01N60C3 ..SSG4394N
SSG4402N ..SSM3K116TU
SSM3K119TU ..SSP5N90A
SSP6N55 ..STB4N62K3
STB4NK60Z ..STD5N52U
STD5N62K3 ..STF8NM50N
STF8NM60ND ..STLT19
STLT19FI ..STP20N10L
STP20N10LFI ..STP6N25FI
STP6N50 ..STT10L01
STT2604 ..STV60N05
STV60N05-16 ..TK12J60U
TK12X53D ..TPC8006-H
TPC8009-H ..TPCC8003-H
TPCC8005-H ..UT3N06
UT3P01Z ..ZVN3306A
ZVN3306F ..ZXMS6006SG
 
2SK3568 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

2SK3568 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2SK3568

Type of 2SK3568 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 40

Maximum drain-source voltage |Uds|, V: 500

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 12

Maximum junction temperature (Tj), °C:

Rise Time of 2SK3568 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm:

Package: TO220SIS

Equivalent transistors for 2SK3568

2SK3568 PDF doc:

1.1. 2sk3568.pdf Size:245K _toshiba

2SK3568
2SK3568
2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3568 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.4? (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 500 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 k?) VDGR 500 V Gate-source voltage VGSS 30 V DC (Note 1) ID 12 Drain current A Pulse (t = 1 ms) IDP 48 1: Gate (Note 1) 2: Drain Drain power dissipation (Tc = 25C) 3: Source PD 40 W JEDEC ? Single pulse avalanche energy EAS 364 mJ (Note 2) JEITA SC-67 Avalanche current IAR 12 A TOSHIBA 2-10U1B Repetitive avalanche energy (Note 3) EAR 4 mJ Weight : 1.7 g (typ.) Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Note: Using continuously u

4.1. 2sk3569.pdf Size:236K _toshiba

2SK3568
2SK3568
2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3569 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54? (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k?) VDGR 600 V Gate-source voltage VGSS 30 V DC (Note 1) ID 10 1: Gate Drain current A 2: Drain Pulse (t = 1 ms) IDP 40 3: Source (Note 1) Drain power dissipation (Tc = 25C) PD 45 W Single pulse avalanche energy EAS 363 mJ JEDEC ? (Note 2) JEITA SC-67 Avalanche current IAR 10 A Repetitive avalanche energy (Note 3) EAR 4.5 mJ TOSHIBA 2-10U1B Channel temperature Tch 150 C Weight : 1.7 g (typ.) Storage temperature range Tstg -55~150 C Note: Using continu

4.2. 2sk3566_100506.pdf Size:214K _toshiba

2SK3568
2SK3568
2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIV) 2SK3566 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 5.6 ? (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = 100 ?A (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 k?) VDGR 900 V Gate-source voltage VGSS 30 V 1: Gate DC (Note 1) ID 2.5 2: Drain Drain current A 3: Source Pulse (t = 1 ms) IDP 7.5 (Note 1) Drain power dissipation (Tc = 25C) JEDEC ? PD 40 W Single pulse avalanche energy JEITA SC-67 EAS 216 mJ (Note 2) TOSHIBA 2-10U1B Avalanche current IAR 2.5 A Weight : 1.7 g (typ.) Repetitive avalanche energy (Note 3) EAR 4 mJ Channel temperature Tch 150 C Storage temperature range Tstg -55 to 150 C Note: U

4.3. 2sk3561.pdf Size:227K _toshiba

2SK3568
2SK3568
2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3561 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75? (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 500 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 k?) VDGR 500 V Gate-source voltage VGSS 30 V DC (Note 1) ID 8 Drain current A Pulse (t = 1 ms) IDP 32 (Note 1) 1: Gate 2: Drain Drain power dissipation (Tc = 25C) PD 40 W 3: Source Single pulse avalanche energy EAS 312 mJ (Note 2) Avalanche current IAR 8 A JEDEC ? Repetitive avalanche energy (Note 3) EAR 4 mJ JEITA SC-67 Channel temperature Tch 150 C TOSHIBA 2-10U1B Storage temperature range Tstg -55~150 C Weight : 1.7 g (typ.) Thermal Characteristics Chara

4.4. 2sk3567.pdf Size:223K _toshiba

2SK3568
2SK3568
2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3567 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7? (typ.) High forward transfer admittance: |Yfs| = 2.5S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k?) VDGR 600 V Gate-source voltage VGSS 30 V DC (Note 1) ID 3.5 1: Gate Drain current A 2: Drain Pulse (t = 1 ms) IDP 14 3: Source (Note 1) Drain power dissipation (Tc = 25C) PD 35 W Single pulse avalanche energy EAS 201 mJ JEDEC ? (Note 2) JEITA SC-67 Avalanche current IAR 3.5 A Repetitive avalanche energy (Note 3) EAR 3.5 mJ TOSHIBA 2-10U1B Channel temperature Tch 150 C Weight : 1.7 g (typ.) Storage temperature range Tstg -55~150 C Note: Using contin

4.5. 2sk3562.pdf Size:232K _toshiba

2SK3568
2SK3568
2SK3562 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3562 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.9? (typ.) High forward transfer admittance: |Yfs| = 5.0S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k?) VDGR 600 V Gate-source voltage VGSS 30 V DC (Note 1) ID 6 Drain current A Pulse (t = 1 ms) IDP 24 (Note 1) 1: Gate 2: Drain Drain power dissipation (Tc = 25C) PD 40 W 3: Source Single pulse avalanche energy EAS 345 mJ (Note 2) Avalanche current IAR 6 A JEDEC ? Repetitive avalanche energy (Note 3) EAR 4 mJ JEITA SC-67 Channel temperature Tch 150 C TOSHIBA 2-10U1B Storage temperature range Tstg -55~150 C Weight : 1.7 g (typ.) Thermal Characteristics Charac

4.6. 2sk3565.pdf Size:341K _toshiba

2SK3568
2SK3568
TENTATIVE 2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) 2SK3565 unit:mm Switching Regulator Applications 100.3 2.70.2 ?3.20.2 Low drain-source ON resistance: RDS (ON) = 2.0? (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 720 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) 1.1 1.1 Characteristics Symbol Rating Unit 0.690.15 Drain-source voltage VDSS 900 V 2.540.25 2.540.25 Drain-gate voltage (RGS = 20 k?) VDGR 900 V Gate-source voltage VGSS 30 V 1 2 3 DC (Note 1) ID 5 Drain current A Pulse (t = 1 ms) IDP 15 (Note 1) 1. Gate Drain power dissipation (Tc = 25C) 2. Drain PD 45 W 3. Source Single pulse avalanche energy EAS 595 mJ (Note 2) Avalanche current IAR 5 A Repetitive avalanche energy (Note 3) EAR 4.5 mJ JEDEC ? Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C

4.7. 2sk3564.pdf Size:248K _toshiba

2SK3568
2SK3568
2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIV) 2SK3564 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7? (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 720 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 k?) VDGR 900 V Gate-source voltage VGSS 30 V DC (Note 1) ID 3 1: Gate Drain current A 2: Drain Pulse (t = 1 ms) IDP 9 3: Source (Note 1) Drain power dissipation (Tc = 25C) PD 40 W Single pulse avalanche energy EAS 408 mJ JEDEC ? (Note 2) JEITA SC-67 Avalanche current IAR 3 A Repetitive avalanche energy (Note 3) EAR 4.0 mJ TOSHIBA 2-10U1B Channel temperature Tch 150 C Weight : 1.7 g (typ.) Storage temperature range Tstg -55~150 C Note: Using continuous

4.8. 2sk3563.pdf Size:348K _toshiba

2SK3568
2SK3568
TENTATIVE 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) 2SK3563 unit:mm Switching Regulator Applications 100.3 2.70.2 ?3.20.2 Low drain-source ON resistance: RDS (ON) = 1.35? (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 500 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) 1.1 1.1 Characteristics Symbol Rating Unit 0.690.15 Drain-source voltage VDSS 500 V 2.540.25 2.540.25 Drain-gate voltage (RGS = 20 k?) VDGR 500 V Gate-source voltage VGSS 30 V 1 2 3 DC (Note 1) ID 5 Drain current A Pulse (t = 1 ms) IDP 20 (Note 1) 1. Gate Drain power dissipation (Tc = 25C) PD 35 W 2. Drain Single pulse avalanche energy EAS 180 mJ 3. Source (Note 2) Avalanche current IAR 5 A Repetitive avalanche energy (Note 3) EAR 3.5 mJ JEDEC ? Channel temperature Tch 150 C Storage temperature range Tstg -55~150

4.9. 2sk3560.pdf Size:76K _panasonic

2SK3568
2SK3568
Power MOSFETs 2SK3560 Silicon N-channel power MOSFET Unit: mm 4.60.2 10.50.3 1.40.1 For PDP/For high-speed switching Features Low on-resistance, low Qg 1.40.1 High avalanche resistance 2.50.2 0.80.1 2.540.3 0 to 0.3 Absolute Maximum Ratings TC = 25C (10.2) Parameter Symbol Rating Unit (8.9) Drain-source surrender voltage VDSS 230 V 1 2 3 Gate-source surrender voltage VGSS 30 V ID 30 A Drain current 1: Gate Peak drain current IDP 120 A 2: Drain PD 50 W 3: Source Power TO-220C-G1 Package dissipation Ta = 25C3 Channel temperature Tch 150 C Internal Connection Storage temperature Tstg -55 to +150 C D G S Electrical Characteristics TC = 25C 3C Parameter Symbol Conditions Min Typ Max Unit Gate-drain surrender voltage VDSS ID = 1 mA, VGS = 0 230 V Diode forward voltage VDSF IDR = 30 A, VGS = 0 -1.5 V Gate threshold voltage Vth VDS = 25 V, ID = 1 mA 2 4 V Drain-source cutoff current IDSS VDS = 184 V, VGS = 0 100 A Gate-sou

See also transistors datasheet: 2SK3497 , 2SK3499 , 2SK3506 , 2SK3543 , 2SK3561 , 2SK3562 , 2SK3563 , 2SK3567 , IRF640 , 2SK3569 , 2SK3625 , 2SK3662 , 2SK3667 , 2SK3669 , 2SK3797 , 2SK3844 , 2SK3846 .

Keywords

 2SK3568 Datasheet  2SK3568 Datenblatt  2SK3568 RoHS  2SK3568 Distributor
 2SK3568 Application Notes  2SK3568 Component  2SK3568 Circuit  2SK3568 Schematic
 2SK3568 Equivalent  2SK3568 Cross Reference  2SK3568 Data Sheet  2SK3568 Fiche Technique

(C) 2005 All Right reserved Bipolar || MOSFET || IGBT | | Manufacturer Sites || SMD Code || Packages