MOSFET Datasheet


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2SK3568
  2SK3568
  2SK3568
 
2SK3568
  2SK3568
  2SK3568
 
2SK3568
  2SK3568
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123N3
BSS123W ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FDB2572
FDB2614 ..FDD8876
FDD8878 ..FDMS8622
FDMS86252 ..FDS4672A
FDS4675_F085 ..FKP202
FKP250A ..FQP13N06L
FQP13N10 ..FRE460D
FRE460H ..FSL23AOR
FSL430D ..H7N0312AB
H7N0312LD ..HAT2185WP
HAT2187WP ..HUF76131SK8
HUF76132P3 ..IPB123N10N3G
IPB12CNE8NG ..IPD60R600E6
IPD60R750E6 ..IPP080N03LG
IPP080N06NG ..IRC220
IRC224 ..IRF3717
IRF3805 ..IRF6726M
IRF6727M ..IRF7756G
IRF7759L2 ..IRFB3207ZG
IRFB3256 ..IRFI460
IRFI4905 ..IRFP353
IRFP354 ..IRFS232
IRFS233 ..IRFSL4010
IRFSL4115 ..IRFZ40
IRFZ40FI ..IRLM120A
IRLM210A ..IXBH40N160
IXBH9N140 ..IXFH60N20
IXFH60N20F ..IXFN110N20
IXFN110N60P3 ..IXFR64N60Q3
IXFR66N50Q2 ..IXFX55N50F
IXFX60N55Q2 ..IXTC75N10
IXTC96N25T ..IXTK170N10P
IXTK170P10P ..IXTP64N055T
IXTP6N100D2 ..IXTV230N85TS
IXTV250N075T ..KF7N50F
KF7N50I ..KP737B
KP737G ..MMBF4392L
MMBF4393 ..MTDA0P10FP
MTDA4N20J3 ..MTN6515E3
MTN6515F3 ..NDF04N60Z
NDF04N60Z ..NTGS3441
NTGS3443 ..PH2520U
PH2925U ..PMN27UN
PMN27UP ..PSMN7R6-60PS
PSMN8R0-30YL ..RFP14N05
RFP14N05L ..RJK2055DPA
RJK2057DPA ..RSU002N06
RSU002P03 ..SDF40N50JAM
SDF420 ..SGS150MA010D1
SGS30MA050D1 ..SMK0965F
SMK0965FC ..SML6070AN
SML6070BN ..SPI07N60S5
SPI07N65C3 ..SSG4890N
SSG4902N ..SSM3K315T
SSM3K316T ..SSPS7334N
SSPS922NE ..STB80NF55-08T4
STB80NF55L-06 ..STD7N52K3
STD7NK40Z ..STH250N55F3-6
STH260N6F6-2 ..STM4806
STM4808 ..STP27N3LH5
STP28NM50N ..STP7NA60FI
STP7NK30Z ..STT6802
STT812A ..STW16N65M5
STW16NK60Z ..TK16J55D
TK17A25D ..TPC8049-H
TPC8050-H ..TPCF8201
TPCF8301 ..UT7410
UT75N02 ..ZVP1320A
ZVP1320F ..ZXMS6006SG
 
2SK3568 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

2SK3568 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2SK3568

Type of 2SK3568 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 40

Maximum drain-source voltage |Uds|, V: 500

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 12

Maximum junction temperature (Tj), °C:

Rise Time of 2SK3568 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm:

Package: TO220SIS

Equivalent transistors for 2SK3568

2SK3568 PDF doc:

1.1. 2sk3568.pdf Size:245K _toshiba

2SK3568
2SK3568
2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3568 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.4? (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 500 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 k?) VDGR 500 V Gate-source voltage VGSS 30 V DC (Note 1) ID 12 Drain current A Pulse (t = 1 ms) IDP 48 1: Gate (Note 1) 2: Drain Drain power dissipation (Tc = 25C) 3: Source PD 40 W JEDEC ? Single pulse avalanche energy EAS 364 mJ (Note 2) JEITA SC-67 Avalanche current IAR 12 A TOSHIBA 2-10U1B Repetitive avalanche energy (Note 3) EAR 4 mJ Weight : 1.7 g (typ.) Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Note: Using continuously u

4.1. 2sk3569.pdf Size:236K _toshiba

2SK3568
2SK3568
2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3569 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54? (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k?) VDGR 600 V Gate-source voltage VGSS 30 V DC (Note 1) ID 10 1: Gate Drain current A 2: Drain Pulse (t = 1 ms) IDP 40 3: Source (Note 1) Drain power dissipation (Tc = 25C) PD 45 W Single pulse avalanche energy EAS 363 mJ JEDEC ? (Note 2) JEITA SC-67 Avalanche current IAR 10 A Repetitive avalanche energy (Note 3) EAR 4.5 mJ TOSHIBA 2-10U1B Channel temperature Tch 150 C Weight : 1.7 g (typ.) Storage temperature range Tstg -55~150 C Note: Using continu

4.2. 2sk3566_100506.pdf Size:214K _toshiba

2SK3568
2SK3568
2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIV) 2SK3566 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 5.6 ? (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = 100 ?A (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 k?) VDGR 900 V Gate-source voltage VGSS 30 V 1: Gate DC (Note 1) ID 2.5 2: Drain Drain current A 3: Source Pulse (t = 1 ms) IDP 7.5 (Note 1) Drain power dissipation (Tc = 25C) JEDEC ? PD 40 W Single pulse avalanche energy JEITA SC-67 EAS 216 mJ (Note 2) TOSHIBA 2-10U1B Avalanche current IAR 2.5 A Weight : 1.7 g (typ.) Repetitive avalanche energy (Note 3) EAR 4 mJ Channel temperature Tch 150 C Storage temperature range Tstg -55 to 150 C Note: U

4.3. 2sk3561.pdf Size:227K _toshiba

2SK3568
2SK3568
2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3561 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75? (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 500 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 k?) VDGR 500 V Gate-source voltage VGSS 30 V DC (Note 1) ID 8 Drain current A Pulse (t = 1 ms) IDP 32 (Note 1) 1: Gate 2: Drain Drain power dissipation (Tc = 25C) PD 40 W 3: Source Single pulse avalanche energy EAS 312 mJ (Note 2) Avalanche current IAR 8 A JEDEC ? Repetitive avalanche energy (Note 3) EAR 4 mJ JEITA SC-67 Channel temperature Tch 150 C TOSHIBA 2-10U1B Storage temperature range Tstg -55~150 C Weight : 1.7 g (typ.) Thermal Characteristics Chara

4.4. 2sk3567.pdf Size:223K _toshiba

2SK3568
2SK3568
2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3567 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7? (typ.) High forward transfer admittance: |Yfs| = 2.5S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k?) VDGR 600 V Gate-source voltage VGSS 30 V DC (Note 1) ID 3.5 1: Gate Drain current A 2: Drain Pulse (t = 1 ms) IDP 14 3: Source (Note 1) Drain power dissipation (Tc = 25C) PD 35 W Single pulse avalanche energy EAS 201 mJ JEDEC ? (Note 2) JEITA SC-67 Avalanche current IAR 3.5 A Repetitive avalanche energy (Note 3) EAR 3.5 mJ TOSHIBA 2-10U1B Channel temperature Tch 150 C Weight : 1.7 g (typ.) Storage temperature range Tstg -55~150 C Note: Using contin

4.5. 2sk3562.pdf Size:232K _toshiba

2SK3568
2SK3568
2SK3562 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3562 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.9? (typ.) High forward transfer admittance: |Yfs| = 5.0S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k?) VDGR 600 V Gate-source voltage VGSS 30 V DC (Note 1) ID 6 Drain current A Pulse (t = 1 ms) IDP 24 (Note 1) 1: Gate 2: Drain Drain power dissipation (Tc = 25C) PD 40 W 3: Source Single pulse avalanche energy EAS 345 mJ (Note 2) Avalanche current IAR 6 A JEDEC ? Repetitive avalanche energy (Note 3) EAR 4 mJ JEITA SC-67 Channel temperature Tch 150 C TOSHIBA 2-10U1B Storage temperature range Tstg -55~150 C Weight : 1.7 g (typ.) Thermal Characteristics Charac

4.6. 2sk3565.pdf Size:341K _toshiba

2SK3568
2SK3568
TENTATIVE 2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) 2SK3565 unit:mm Switching Regulator Applications 100.3 2.70.2 ?3.20.2 Low drain-source ON resistance: RDS (ON) = 2.0? (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 720 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) 1.1 1.1 Characteristics Symbol Rating Unit 0.690.15 Drain-source voltage VDSS 900 V 2.540.25 2.540.25 Drain-gate voltage (RGS = 20 k?) VDGR 900 V Gate-source voltage VGSS 30 V 1 2 3 DC (Note 1) ID 5 Drain current A Pulse (t = 1 ms) IDP 15 (Note 1) 1. Gate Drain power dissipation (Tc = 25C) 2. Drain PD 45 W 3. Source Single pulse avalanche energy EAS 595 mJ (Note 2) Avalanche current IAR 5 A Repetitive avalanche energy (Note 3) EAR 4.5 mJ JEDEC ? Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C

4.7. 2sk3564.pdf Size:248K _toshiba

2SK3568
2SK3568
2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIV) 2SK3564 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7? (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 720 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 k?) VDGR 900 V Gate-source voltage VGSS 30 V DC (Note 1) ID 3 1: Gate Drain current A 2: Drain Pulse (t = 1 ms) IDP 9 3: Source (Note 1) Drain power dissipation (Tc = 25C) PD 40 W Single pulse avalanche energy EAS 408 mJ JEDEC ? (Note 2) JEITA SC-67 Avalanche current IAR 3 A Repetitive avalanche energy (Note 3) EAR 4.0 mJ TOSHIBA 2-10U1B Channel temperature Tch 150 C Weight : 1.7 g (typ.) Storage temperature range Tstg -55~150 C Note: Using continuous

4.8. 2sk3563.pdf Size:348K _toshiba

2SK3568
2SK3568
TENTATIVE 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) 2SK3563 unit:mm Switching Regulator Applications 100.3 2.70.2 ?3.20.2 Low drain-source ON resistance: RDS (ON) = 1.35? (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 500 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) 1.1 1.1 Characteristics Symbol Rating Unit 0.690.15 Drain-source voltage VDSS 500 V 2.540.25 2.540.25 Drain-gate voltage (RGS = 20 k?) VDGR 500 V Gate-source voltage VGSS 30 V 1 2 3 DC (Note 1) ID 5 Drain current A Pulse (t = 1 ms) IDP 20 (Note 1) 1. Gate Drain power dissipation (Tc = 25C) PD 35 W 2. Drain Single pulse avalanche energy EAS 180 mJ 3. Source (Note 2) Avalanche current IAR 5 A Repetitive avalanche energy (Note 3) EAR 3.5 mJ JEDEC ? Channel temperature Tch 150 C Storage temperature range Tstg -55~150

4.9. 2sk3560.pdf Size:76K _panasonic

2SK3568
2SK3568
Power MOSFETs 2SK3560 Silicon N-channel power MOSFET Unit: mm 4.60.2 10.50.3 1.40.1 For PDP/For high-speed switching Features Low on-resistance, low Qg 1.40.1 High avalanche resistance 2.50.2 0.80.1 2.540.3 0 to 0.3 Absolute Maximum Ratings TC = 25C (10.2) Parameter Symbol Rating Unit (8.9) Drain-source surrender voltage VDSS 230 V 1 2 3 Gate-source surrender voltage VGSS 30 V ID 30 A Drain current 1: Gate Peak drain current IDP 120 A 2: Drain PD 50 W 3: Source Power TO-220C-G1 Package dissipation Ta = 25C3 Channel temperature Tch 150 C Internal Connection Storage temperature Tstg -55 to +150 C D G S Electrical Characteristics TC = 25C 3C Parameter Symbol Conditions Min Typ Max Unit Gate-drain surrender voltage VDSS ID = 1 mA, VGS = 0 230 V Diode forward voltage VDSF IDR = 30 A, VGS = 0 -1.5 V Gate threshold voltage Vth VDS = 25 V, ID = 1 mA 2 4 V Drain-source cutoff current IDSS VDS = 184 V, VGS = 0 100 A Gate-sou

See also transistors datasheet: 2SK3497 , 2SK3499 , 2SK3506 , 2SK3543 , 2SK3561 , 2SK3562 , 2SK3563 , 2SK3567 , IRF640 , 2SK3569 , 2SK3625 , 2SK3662 , 2SK3667 , 2SK3669 , 2SK3797 , 2SK3844 , 2SK3846 .

Keywords

 2SK3568 Datasheet  2SK3568 Datenblatt  2SK3568 RoHS  2SK3568 Distributor
 2SK3568 Application Notes  2SK3568 Component  2SK3568 Circuit  2SK3568 Schematic
 2SK3568 Equivalent  2SK3568 Cross Reference  2SK3568 Data Sheet  2SK3568 Fiche Technique

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