MOSFET Datasheet



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2SK3568
  2SK3568
  2SK3568
 
2SK3568
  2SK3568
  2SK3568
 
2SK3568
  2SK3568
 
 
List
03N06 ..2N5198
2N5199 ..2N6798SM
2N6799 ..2N7272R1
2N7272R2 ..2SJ378
2SJ380 ..2SK1094
2SK1095 ..2SK1460LS
2SK1461 ..2SK1891
2SK1895 ..2SK2341
2SK2342 ..2SK2709
2SK2710 ..2SK3070
2SK3070L ..2SK3472
2SK3473 ..2SK4019
2SK4020 ..2SK904
2SK905 ..3SK181-5
3SK181-6 ..7N60A
7N60F ..AO4854
AO4862 ..AOD421
AOD422 ..AON6404
AON6404A ..AOT2608L
AOT260L ..AOWF4S60
AOWF7S65 ..AP20N15GH-HF
AP20N15GI-HF ..AP40T03GP
AP40T03GS ..AP60T03GP
AP60T03GS ..AP9466GS
AP9467AGH-HF ..AP9971GJ
AP9971GM-HF ..APM9428K
APM9430 ..APT20M42HVR
APT20M42HVR ..APT8018L2VFR
APT8018L2VR ..AUIRFR3504Z
AUIRFR3607 ..BF904AWR
BF904R ..BLF7G15LS-200
BLF7G15LS-300P ..BSB053N03LPG
BSC010NE2LS ..BSS123
BSS123A ..BUK653R7-30C
BUK654R0-75C ..BUK9217-75B
BUK9219-55A ..BUZ50A-TO220M
BUZ50ASM ..CED20P10
CED21A2 ..CEP02N7G
CEP02N9 ..CPH3350
CPH3351 ..DMN66D0LW
DMP2004DMK ..FCP11N60N
FCP130N60 ..FDC6305N
FDC6306P ..FDH038AN08A1
FDH047AN08A0 ..FDMS3664S
FDMS3668S ..FDP5N50NZ
FDP5N60NZ ..FDS86140
FDS86141 ..FQA62N25C
FQA65N20 ..FQPF13N06L
FQPF13N50C ..FRM9140R
FRM9230D ..FTD04N65C
FTD06N70C ..H5N5004PL
H5N5005PL ..HAT2160H
HAT2160N ..HUF75637S3S
HUF75639G3 ..IPB05CN10NG
IPB065N03LG ..IPD33CN10NG
IPD350N06LG ..IPP024N06N3G
IPP028N08N3G ..IPW50R350CP
IPW50R399CP ..IRF3415S
IRF350 ..IRF6633
IRF6633A ..IRF7507(P)
IRF7509 ..IRF9952
IRF9952Q ..IRFH5304
IRFH5306 ..IRFP241
IRFP242 ..IRFR540Z
IRFR5410 ..IRFS9232
IRFS9233 ..IRFY120
IRFY120C ..IRLHM630
IRLHS2242 ..IRLWZ34A
IRLWZ44A ..IXFH24N50
IXFH24N50Q ..IXFL32N120P
IXFL34N100 ..IXFR180N15P
IXFR18N90P ..IXFX20N120
IXFX20N120P ..IXTA60N10T
IXTA60N20T ..IXTH60N20L2
IXTH60N25 ..IXTP2N60P
IXTP2N80 ..IXTT50P085
IXTT50P10 ..KF1N60I
KF1N60L ..KML0D3P20V
KML0D4N20TV ..LS4119
MBNP2026G6 ..MTB25P06FP
MTB2P50E ..MTN2310M3
MTN2310N3 ..MTP452M3
MTP4835AQ8 ..NTB5426N
NTB5605P ..NTP6412AN
NTP6413AN ..P0903BV
P0903BVA ..P5010AT
P5010AV ..PHB50N03LT
PHB50N06LT ..PMGD280UN
PMGD290XN ..PSMN5R8-40YS
PSMN5R9-30YL ..RFD14N06L
RFD14N06LSM ..RJK0652DPB
RJK0653DPB ..RQM2201DNS
RRF015P03 ..SDF120JAB-S
SDF120JAB-U ..SFS9610
SFS9614 ..SMG2305PE
SMG2306A ..SML40H22
SML40H28 ..SPA07N60CFD
SPA07N65C3 ..SSD70N04-06D
SSD9435 ..SSF5508A
SSF5508U ..SSG6680
SSG9435 ..SSM3K44MFV
SSM3K48FU ..SSPS7321P
SSPS7330N ..STB55NF03L
STB55NF06 ..STD5NK52ZD
STD5NK60Z ..STFI10NK60Z
STFI13NK60Z ..STLT30
STM101N ..STP20NF06
STP20NF06L ..STP6N52K3
STP6N60FI ..STT2605
STT3402N ..STV60N06
STV6NA60 ..TK12E60U
TK12J55D ..TPC8003
TPC8004 ..TPCC8001-H
TPCC8002-H ..UT3443
UT3458 ..ZVN0540A
ZVN0545A ..ZXMS6004DG
ZXMS6004DT8 ..ZXMS6006SG
 
2SK3568 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

2SK3568 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2SK3568

Type of 2SK3568 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 40

Maximum drain-source voltage |Uds|, V: 500

Maximum gate-source voltage |Ugs|, V: 30

Maximum drain current |Id|, A: 12

Maximum junction temperature (Tj), °C: 150

Rise Time of 2SK3568 transistor (tr), nS: 22

Drain-source Capacitance (Cd), pF: 180

Maximum drain-source on-state resistance (Rds), Ohm: 0.52

Package: TO220SIS

Equivalent transistors for 2SK3568 - Cross-Reference Search

2SK3568 PDF doc:

1.1. 2sk3568.pdf Size:245K _toshiba

2SK3568
2SK3568
2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3568 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.4? (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 500 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 k?) VDGR 500 V Gate-source voltage VGSS 30 V DC (Note 1) ID 12 Drain current A Pulse (t = 1 ms) IDP 48 1: Gate (Note 1) 2: Drain Drain power dissipation (Tc = 25C) 3: Source PD 40 W JEDEC ? Single pulse avalanche energy EAS 364 mJ (Note 2) JEITA SC-67 Avalanche current IAR 12 A TOSHIBA 2-10U1B Repetitive avalanche energy (Note 3) EAR 4 mJ Weight : 1.7 g (typ.) Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Note: Using continuously u

4.1. 2sk3561.pdf Size:227K _toshiba

2SK3568
2SK3568
2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3561 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75? (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 500 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 k?) VDGR 500 V Gate-source voltage VGSS 30 V DC (Note 1) ID 8 Drain current A Pulse (t = 1 ms) IDP 32 (Note 1) 1: Gate 2: Drain Drain power dissipation (Tc = 25C) PD 40 W 3: Source Single pulse avalanche energy EAS 312 mJ (Note 2) Avalanche current IAR 8 A JEDEC ? Repetitive avalanche energy (Note 3) EAR 4 mJ JEITA SC-67 Channel temperature Tch 150 C TOSHIBA 2-10U1B Storage temperature range Tstg -55~150 C Weight : 1.7 g (typ.) Thermal Characteristics Chara

4.2. 2sk3562.pdf Size:232K _toshiba

2SK3568
2SK3568
2SK3562 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3562 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.9? (typ.) High forward transfer admittance: |Yfs| = 5.0S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k?) VDGR 600 V Gate-source voltage VGSS 30 V DC (Note 1) ID 6 Drain current A Pulse (t = 1 ms) IDP 24 (Note 1) 1: Gate 2: Drain Drain power dissipation (Tc = 25C) PD 40 W 3: Source Single pulse avalanche energy EAS 345 mJ (Note 2) Avalanche current IAR 6 A JEDEC ? Repetitive avalanche energy (Note 3) EAR 4 mJ JEITA SC-67 Channel temperature Tch 150 C TOSHIBA 2-10U1B Storage temperature range Tstg -55~150 C Weight : 1.7 g (typ.) Thermal Characteristics Charac

4.3. 2sk3563.pdf Size:348K _toshiba

2SK3568
2SK3568
TENTATIVE 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) 2SK3563 unit:mm Switching Regulator Applications 100.3 2.70.2 ?3.20.2 Low drain-source ON resistance: RDS (ON) = 1.35? (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 500 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) 1.1 1.1 Characteristics Symbol Rating Unit 0.690.15 Drain-source voltage VDSS 500 V 2.540.25 2.540.25 Drain-gate voltage (RGS = 20 k?) VDGR 500 V Gate-source voltage VGSS 30 V 1 2 3 DC (Note 1) ID 5 Drain current A Pulse (t = 1 ms) IDP 20 (Note 1) 1. Gate Drain power dissipation (Tc = 25C) PD 35 W 2. Drain Single pulse avalanche energy EAS 180 mJ 3. Source (Note 2) Avalanche current IAR 5 A Repetitive avalanche energy (Note 3) EAR 3.5 mJ JEDEC ? Channel temperature Tch 150 C Storage temperature range Tstg -55~150

4.4. 2sk3566_100506.pdf Size:214K _toshiba

2SK3568
2SK3568
2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIV) 2SK3566 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 5.6 ? (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = 100 ?A (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 k?) VDGR 900 V Gate-source voltage VGSS 30 V 1: Gate DC (Note 1) ID 2.5 2: Drain Drain current A 3: Source Pulse (t = 1 ms) IDP 7.5 (Note 1) Drain power dissipation (Tc = 25C) JEDEC ? PD 40 W Single pulse avalanche energy JEITA SC-67 EAS 216 mJ (Note 2) TOSHIBA 2-10U1B Avalanche current IAR 2.5 A Weight : 1.7 g (typ.) Repetitive avalanche energy (Note 3) EAR 4 mJ Channel temperature Tch 150 C Storage temperature range Tstg -55 to 150 C Note: U

4.5. 2sk3565.pdf Size:341K _toshiba

2SK3568
2SK3568
TENTATIVE 2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) 2SK3565 unit:mm Switching Regulator Applications 100.3 2.70.2 ?3.20.2 Low drain-source ON resistance: RDS (ON) = 2.0? (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 720 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) 1.1 1.1 Characteristics Symbol Rating Unit 0.690.15 Drain-source voltage VDSS 900 V 2.540.25 2.540.25 Drain-gate voltage (RGS = 20 k?) VDGR 900 V Gate-source voltage VGSS 30 V 1 2 3 DC (Note 1) ID 5 Drain current A Pulse (t = 1 ms) IDP 15 (Note 1) 1. Gate Drain power dissipation (Tc = 25C) 2. Drain PD 45 W 3. Source Single pulse avalanche energy EAS 595 mJ (Note 2) Avalanche current IAR 5 A Repetitive avalanche energy (Note 3) EAR 4.5 mJ JEDEC ? Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C

4.6. 2sk3564.pdf Size:248K _toshiba

2SK3568
2SK3568
2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIV) 2SK3564 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7? (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 720 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 k?) VDGR 900 V Gate-source voltage VGSS 30 V DC (Note 1) ID 3 1: Gate Drain current A 2: Drain Pulse (t = 1 ms) IDP 9 3: Source (Note 1) Drain power dissipation (Tc = 25C) PD 40 W Single pulse avalanche energy EAS 408 mJ JEDEC ? (Note 2) JEITA SC-67 Avalanche current IAR 3 A Repetitive avalanche energy (Note 3) EAR 4.0 mJ TOSHIBA 2-10U1B Channel temperature Tch 150 C Weight : 1.7 g (typ.) Storage temperature range Tstg -55~150 C Note: Using continuous

4.7. 2sk3567.pdf Size:223K _toshiba

2SK3568
2SK3568
2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3567 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7? (typ.) High forward transfer admittance: |Yfs| = 2.5S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k?) VDGR 600 V Gate-source voltage VGSS 30 V DC (Note 1) ID 3.5 1: Gate Drain current A 2: Drain Pulse (t = 1 ms) IDP 14 3: Source (Note 1) Drain power dissipation (Tc = 25C) PD 35 W Single pulse avalanche energy EAS 201 mJ JEDEC ? (Note 2) JEITA SC-67 Avalanche current IAR 3.5 A Repetitive avalanche energy (Note 3) EAR 3.5 mJ TOSHIBA 2-10U1B Channel temperature Tch 150 C Weight : 1.7 g (typ.) Storage temperature range Tstg -55~150 C Note: Using contin

4.8. 2sk3569.pdf Size:236K _toshiba

2SK3568
2SK3568
2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3569 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54? (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k?) VDGR 600 V Gate-source voltage VGSS 30 V DC (Note 1) ID 10 1: Gate Drain current A 2: Drain Pulse (t = 1 ms) IDP 40 3: Source (Note 1) Drain power dissipation (Tc = 25C) PD 45 W Single pulse avalanche energy EAS 363 mJ JEDEC ? (Note 2) JEITA SC-67 Avalanche current IAR 10 A Repetitive avalanche energy (Note 3) EAR 4.5 mJ TOSHIBA 2-10U1B Channel temperature Tch 150 C Weight : 1.7 g (typ.) Storage temperature range Tstg -55~150 C Note: Using continu

4.9. 2sk3560.pdf Size:76K _panasonic

2SK3568
2SK3568
Power MOSFETs 2SK3560 Silicon N-channel power MOSFET Unit: mm 4.60.2 10.50.3 1.40.1 For PDP/For high-speed switching Features Low on-resistance, low Qg 1.40.1 High avalanche resistance 2.50.2 0.80.1 2.540.3 0 to 0.3 Absolute Maximum Ratings TC = 25C (10.2) Parameter Symbol Rating Unit (8.9) Drain-source surrender voltage VDSS 230 V 1 2 3 Gate-source surrender voltage VGSS 30 V ID 30 A Drain current 1: Gate Peak drain current IDP 120 A 2: Drain PD 50 W 3: Source Power TO-220C-G1 Package dissipation Ta = 25C3 Channel temperature Tch 150 C Internal Connection Storage temperature Tstg -55 to +150 C D G S Electrical Characteristics TC = 25C 3C Parameter Symbol Conditions Min Typ Max Unit Gate-drain surrender voltage VDSS ID = 1 mA, VGS = 0 230 V Diode forward voltage VDSF IDR = 30 A, VGS = 0 -1.5 V Gate threshold voltage Vth VDS = 25 V, ID = 1 mA 2 4 V Drain-source cutoff current IDSS VDS = 184 V, VGS = 0 100 A Gate-sou

See also transistors datasheet: 2SK3497 , 2SK3499 , 2SK3506 , 2SK3543 , 2SK3561 , 2SK3562 , 2SK3563 , 2SK3567 , IRF640 , 2SK3569 , 2SK3625 , 2SK3662 , 2SK3667 , 2SK3669 , 2SK3797 , 2SK3844 , 2SK3846 .

Keywords

 2SK3568 Datasheet  2SK3568 Datenblatt  2SK3568 RoHS  2SK3568 Distributor
 2SK3568 Application Notes  2SK3568 Component  2SK3568 Circuit  2SK3568 Schematic
 2SK3568 Equivalent  2SK3568 Cross Reference  2SK3568 Data Sheet  2SK3568 Fiche Technique

 

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