MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
2SK3911
  2SK3911
  2SK3911
 
2SK3911
  2SK3911
  2SK3911
 
2SK3911
  2SK3911
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3141
2SK3141-01 ..2SK3668
2SK3669 ..2SK523
2SK525 ..3N60K
3N60Z ..5N80
5N90 ..AP10N70W
AP10P10GH-HF ..AP2R803GH-HF
AP2R803GMT-HF ..AP4543GEH-HF
AP4543GEM-HF ..AP92T12GP-HF
AP92U03GH-HF ..AP98T07GP-HF
AP9918GJ ..APT10M11JVR
APT10M11LVR ..AUIRF3007
AUIRF3205 ..AUIRLR2908
AUIRLR3105 ..BLD6G22LS-50
BLF1043 ..BS170F
BS170P ..BSP75G
BSP75N ..BUK6510-75C
BUK652R0-30C ..BUK9107-55ATE
BUK9120-48TC ..BUZ41A
BUZ42 ..CED12N10L
CED12P10 ..CEP01N65
CEP01N6G ..CEUF640
CEV2306 ..DMP2066LSD
DMP2066LSN ..FCPF22N60NT
FCPF22N60NT ..FDD13AN06A0_F085
FDD14AN06LA0_F085 ..FDMA1032CZ
FDMA1032CZ ..FDMS86103L
FDMS86103L ..FDPF5N50NZF
FDPF5N50NZU ..FDS8958A_F085
FDS8958A_F085 ..FQB19N20L
FQB19N20L ..FQP8N80C
FQP8N80C ..FRL9130H
FRL9130R ..GWM120-0075X1-SL
GWM120-0075X1-SL ..HAT1040T
HAT1041T ..HAT3038R
HAT3040R ..IPA030N10N3G
IPA032N06N3G ..IPB80N03S4L-02
IPB80N03S4L-03 ..IPI100N04S3-03
IPI100N04S4-H2 ..IPP60R160C6
IPP60R165CP ..IRF1010EZL
IRF1010EZS ..IRF5806
IRF5810 ..IRF7321D2
IRF7322D1 ..IRF840A
IRF840A ..IRFBF20S
IRFBF30 ..IRFL014
IRFL014N ..IRFPE40
IRFPE50 ..IRFS453
IRFS4610 ..IRFU2405
IRFU2407 ..IRL3502S
IRL3705N ..IRLR8113
IRLR8256 ..IXFE39N90
IXFE44N50Q ..IXFK21N100F
IXFK21N100Q ..IXFN48N50
IXFN48N50Q ..IXFT68N20
IXFT69N30P ..IXTA140N055T2
IXTA140P05T ..IXTH20N60
IXTH20N60MA ..IXTN600N04T2
IXTN60N50L2 ..IXTQ32P20T
IXTQ36N30P ..IXTZ24N50MA
IXTZ24N50MB ..KHB9D0N90P1
KHB9D5N20D ..KTJ6131E
KTJ6131V ..NCV8402D
NCV8403 ..NTD4805N
NTD4806N ..NTTFS4932N
NTTFS4937N ..PHX3N40E
PHX3N50E ..PSMN2R0-60ES
PSMN2R0-60PS ..RFD12N06RLESM
RFD14N05 ..RJK0455DPB
RJK0456DPB ..RQK0606KGDQA
RQK0607AQDQS ..SDF1NA60JAA
SDF1NA60JAB ..SFW9610
SFW9614 ..SMK0825FZ
SMK0850F ..SML6045BN
SML6045HN ..SPP08N50C3
SPP08N80C3 ..SSH20N45
SSH20N45A ..SSM5P05FU
SSM5P15FU ..SSS5N90A
SSS6N55 ..STD13NM60N
STD14NM50N ..STE50N40
STE53NA50 ..STK12N05L
STK12N06L ..STP20NM60
STP20NM60FD ..STP75N3LLH6
STP75NF20 ..STW12N60
STW12NA50 ..TK12X60U
TK130F06K3 ..TPC8010-H
TPC8012-H ..TPCC8006-H
TPCC8007 ..UT3P06
UT40N03 ..ZVN3310A
ZVN3310F ..ZXMS6006SG
 
2SK3911 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

2SK3911 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2SK3911

Type of 2SK3911 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 150

Maximum drain-source voltage |Uds|, V: 600

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 20

Maximum junction temperature (Tj), °C:

Rise Time of 2SK3911 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm:

Package: TO3P(N)

Equivalent transistors for 2SK3911

2SK3911 PDF doc:

1.1. 2sk3911.pdf Size:193K _toshiba

2SK3911
2SK3911
2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII ?-MOSVI) 2SK3911 Switching Regulator Applications Unit: mm Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.22? (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.) Low leakage current: IDSS = 500 ?A (VDS = 600 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k?) VDGR 600 V Gate-source voltage VGSS 30 V DC (Note 1) ID 20 1. Gate Drain current A 2. Drain (heatsink) Pulse (Note 1) IDP 80 3. Source Drain power dissipation (Tc = 25C) PD 150 W JEDEC ? Single pulse avalanche energy EAS 792 mJ (Note 2) JEITA SC-65 Avalanche current IAR 20 A TOSHIBA 2-16C1B Repetitive avalanche energy (Note 3) EAR 15 mJ Weight: 4.6 g (typ.) Channel temperature Tch 150 C Storage temperature

5.1. 2sk3947.pdf Size:182K _toshiba

2SK3911
2SK3911
2SK3947 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3947 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.1 ? (typ.) High forward transfer admittance: |Yfs| = 5.0S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k?) VDGR 600 V Gate-source voltage VGSS 30 V DC (Note 1) ID 6 1: Gate Drain current A 2: Drain Pulse (t = 1 ms) IDP 24 3: Source (Note 1) Drain power dissipation (Tc = 25C) PD 40 W Single-pulse avalanche energy EAS 345 mJ JEDEC ? (Note 2) JEITA SC-67 Avalanche current IAR 6 A Repetitive avalanche energy (Note 3) EAR 4 mJ TOSHIBA 2-10U1B Channel temperature Tch 150 C Weight: 1.7 g (typ.) Storage temperature range Tstg -55~150 C Note: Using continuously

5.2. 2sk3940.pdf Size:188K _toshiba

2SK3911
2SK3911
2SK3940 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIII) 2SK3940 Switching Regulator, DC/DC Converter Applications Unit: mm Motor Drive Applications Low drain-source ON-resistance: RDS (ON) = 5.6 m? (typ.) High forward transfer admittance: |Yfs| = 90 S (typ.) Low leakage current: IDSS = 100 A (VDS = 75 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 75 V Drain-gate voltage (RGS = 20 k?) VDGR 75 V Gate-source voltage VGSS 20 V ID 70 DC (Note 1) Drain current A 1. GATE IDP 280 Pulse (Note 1) 2. DRAIN (HEAT SINK) 3. SOURCE Drain power dissipation (Tc = 25C) PD 150 W Single-pulse avalanche energy EAS 444 mJ JEDEC ? (Note 2) Avalanche current IAR 70 A JEITA ? Repetitive avalanche energy (Note 3) EAR 15 mJ TOSHIBA 2-16C1B Channel temperature Tch 175 C Weight: 4.6 g (typ.) Storage temperature range Tstg

5.3. 2sk3994.pdf Size:255K _toshiba

2SK3911
2SK3911
2SK3994 TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (?-MOS V) 2SK3994 Switching Regulator, DC/DC Converter Applications Unit: mm Motor Drive Applications Low drain-source ON-resistance : RDS (ON) = 90 m? (typ.) High forward transfer admittance : |Yfs| = 10 S (typ.) Low leakage current : IDSS = 100 ?A (max) (VDS = 250 V) Enhancement mode : Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 250 V Drain-gate voltage (RGS = 20 k?) VDGR 250 V Gate-source voltage VGSS 30 V DC (Note 1) ID 20 A Drain current Pulse (Note 1) IDP 80 A Drain power dissipation (Tc = 25C) PD 45 W JEDEC Single-pulse avalanche energy EAS 487 mJ JEITA SC-67 (Note 2) TOSHIBA 2-10R1B Avalanche current IAR 20 A Repetitive avalanche energy (Note 3) EAR 4.5 mJ Weight: 1.9 g (typ.) Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Note: Using con

5.4. 2sk3906.pdf Size:179K _toshiba

2SK3911
2SK3911
2SK3906 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH II ?-MOS VI) 2SK3906 Switching Regulator Applications Unit: mm Small gate charge: Qg = 60 nC (typ.) Fast reverse recovery time: trr = 400 ns (typ.) Low drain-source ON-resistance: RDS (ON) = 0.27 ? (typ.) High forward transfer admittance: |Yfs| = 15S (typ.) Low leakage current: IDSS = 500 ?A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k?) VDGR 600 V Gate-source voltage VGSS 30 V 1. Gate 2. Drain(heat sink) DC (Note 1) ID 20 3. Source Drain current A Pulse (Note 1) IDP 80 JEDEC ? Drain power dissipation (Tc = 25C) PD 150 W JEITA SC-65 Single-pulse avalanche energy EAS 792 mJ (Note 2) TOSHIBA 2-16C1B Avalanche current IAR 20 A Weight: 4.6 g (typ.) Repetitive avalanche energy (Note 3) EAR 15 m

5.5. 2sk3936.pdf Size:180K _toshiba

2SK3911
2SK3911
2SK3936 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH II ?-MOS VI) 2SK3936 Switching Regulator Applications Unit: mm Small gate charge: Qg = 60 nC (typ.) Fast reverse recovery time: trr = 380 ns (typ.) Low drain-source ON-resistance: RDS (ON) = 0.2 ? (typ.) High forward transfer admittance: |Yfs| = 16.5 S (typ.) Low leakage current: IDSS = 500 ?A (VDS = 500 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 k?) VDGR 500 V Gate-source voltage VGSS 30 V 1. Gate 2. Drain(heat sink) DC (Note 1) ID 23 3. Source Drain current A Pulse (Note 1) IDP 92 JEDEC ? Drain power dissipation (Tc = 25C) PD 150 W JEITA SC-65 Single-pulse avalanche energy EAS 759 mJ (Note 2) TOSHIBA 2-16C1B Avalanche current IAR 23 A Weight: 4.6 g (typ.) Repetitive avalanche energy (Note 3) EAR 15

5.6. 2sk3905.pdf Size:239K _toshiba

2SK3911
2SK3911
2SK3905 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3905 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.25 ? (typ.) High forward transfer admittance: ?Yfs? = 8.2 S (typ.) Low leakage current: IDSS = 100 ?A (max) (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 k?) VDGR 500 V Gate-source voltage VGSS 30 V DC (Note 1) ID 17 Drain current A 1. GATE Pulse (Note 1) IDP 68 2. DRAIN (HEATSINK) 3. SOURCE Drain power dissipation (Tc = 25C) PD 150 W Single pulse avalanche energy JEDEC ? EAS 816 mJ (Note 2) JEITA SC-65 Avalanche current IAR 17 A TOSHIBA 2-16C1B Repetitive avalanche energy (Note 3) EAR 15 mJ Weight: 4.6 g (typ.) Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Note: Using con

5.7. 2sk3904.pdf Size:238K _toshiba

2SK3911
2SK3911
2SK3904 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3904 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.2 ? (typ.) High forward transfer admittance: ?Yfs? = 9.5 S (typ.) Low leakage current: IDSS = 100 ?A (max) (VDS = 450 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 450 V Drain-gate voltage (RGS = 20 k?) VDGR 450 V Gate-source voltage VGSS 30 V DC (Note 1) ID 19 Drain current A 1. GATE Pulse (Note 1) IDP 76 2. DRAIN (HEATSINK) 3. SOURCE Drain power dissipation (Tc = 25C) PD 150 W Single pulse avalanche energy JEDEC ? EAS 820 mJ (Note 2) JEITA SC-65 Avalanche current IAR 19 A TOSHIBA 2-16C1B Repetitive avalanche energy (Note 3) EAR 15 mJ Weight: 4.6 g (typ.) Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Note: Using cont

5.8. 2sk3907.pdf Size:213K _toshiba

2SK3911
2SK3911
2SK3907 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII ?-MOSVI) 2SK3907 Switching Regulator Applications Unit: mm Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.18 ? (typ.) High forward transfer admittance: |Yfs| = 12 S (typ.) Low leakage current: IDSS = 500 ?A (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 k?) VDGR 500 V Gate-source voltage VGSS 30 V DC (Note 1) ID 23 Drain current A 1. GATE Pulse (Note 1) IDP 92 2. DRAIN (HEATSINK) 3. SOURCE Drain power dissipation (Tc = 25C) PD 150 W Single pulse avalanche energy JEDEC ? EAS 552 mJ (Note 2) JEITA SC-65 Avalanche current IAR 23 A TOSHIBA 2-16C1B Repetitive avalanche energy (Note 3) EAR 15 mJ Weight: 4.6 g (typ.) Channel temperature Tch 150 C Storage temperatu

5.9. 2sk3903.pdf Size:239K _toshiba

2SK3911
2SK3911
2SK3903 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3903 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32 ? (typ.) High forward transfer admittance: ?Yfs? = 7.5 S (typ.) Low leakage current: IDSS = 100 ?A (max) (VDS = 600 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k?) VDGR 600 V Gate-source voltage VGSS 30 V DC (Note 1) ID 14 1. GATE Drain current A 2. DRAIN (HEATSINK) Pulse (Note 1) IDP 56 3. SOURCE Drain power dissipation (Tc = 25C) PD 150 W Single pulse avalanche energy JEDEC ? EAS 806 mJ (Note 2) JEITA SC-65 Avalanche current IAR 14 A TOSHIBA 2-16C1B Repetitive avalanche energy (Note 3) EAR 15 mJ Channel temperature Tch 150 C Weight: 4.6 g (typ.) Storage temperature range Tstg -55~150 C Note: Using c

5.10. 2sk3935.pdf Size:313K _toshiba

2SK3911
2SK3911
2SK3935 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3935 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.18? (typ.) High forward transfer admittance : |Yfs| = 10 S (typ.) Low leakage current : IDSS = 100 ?A (max) (VDS = 450 V) Enhancement model : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 450 V Drain-gate voltage (RGS = 20 k?) VDGR 450 V Gate-source voltage VGSS 30 V 1: Gate DC (Note 1) ID 17 A 2: Drain Drain current 3: Source Pulse (Note 1) IDP 68 A Drain power dissipation PD 50 W JEDEC - Single pulse avalanche energy JEITA SC-67 EAS 918 mJ (Note 2) TOSHIBA 2-10U1B Avalanche current IAR 17 A Weight: 1.7 g (typ.) Repetitive avalanche energy (Note 3) EAR 5 mJ Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Note: Using continuously under hea

5.11. 2sk3934.pdf Size:288K _toshiba

2SK3911
2SK3911
2SK3934 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3934 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.23? (typ.) High forward transfer admittance: |Yfs| = 8.2 S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 k?) VDGR 500 V Gate-source voltage VGSS 30 V DC (Note 1) ID 15 Drain current A Pulse (t = 1 ms) 1: Gate IDP 60 (Note 1) 2: Drain 3: Source Drain power dissipation (Tc = 25C) PD 50 W JEDEC ? Single pulse avalanche energy EAS 1.08 J (Note 2) JEITA SC-67 Avalanche current IAR 15 A TOSHIBA 2-10U1B Repetitive avalanche energy (Note 3) EAR 5.0 mJ Weight: 1.7 g (typ.) Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Note: Using continuous

5.12. 2sk3931.pdf Size:101K _fuji

2SK3911
2SK3911
2SK3931-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings Equivalent circuit schematic (Tc=25C unless otherwise specified) Drain(D) Item Symbol Ratings Unit Remarks Drain-source voltage VDS 500 V VDSX 500 V VGS=-30V Continuous Drain Current ID 11 A Pulsed Drain Current ID(puls] 44 A Gate(G) Gate-Source Voltage VGS 30 V Source(S) Maximum Avalanche current IAR 11 A Note *1 Non-Repetitive EAS 453.9 mJ Note *2 < Note *1:Tch 150C,Repetitive and Non-repetitive = Maximum Avalanche Energy Note *2:StartingTch=25C,IAS=4.4A,L=43mH, Repetitive EAR 16.5 mJ Note *3 VCC=50V,RG=50? Maximum Avalanche Energy EAS limited by maximum channel temperature

5.13. 2sk3932.pdf Size:105K _fuji

2SK3911
2SK3911
2SK3932-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25C unless otherwise specified) Equivalent circuit schematic Item Symbol Ratings Unit Remarks Drain-source voltage VDS 500 V Drain(D) VDSX 500 V VGS=-30V Continuous Drain Current ID 11 A Pulsed Drain Current ID(puls] 44 A Gate-Source Voltage VGS 30 V Gate(G) Maximum Avalanche current IAR 11 A Note *1 Source(S) Non-Repetitive EAS 453.9 mJ Note *2 Maximum Avalanche Energy < Note *1:Tch 150C,Repetitive and Non-repetitive = Repetitive EAR 6.0 mJ Note *3 Note *2:StartingTch=25C,IAS=4.4A,L=43mH, Maximum Avalanche Energy VCC=50V,RG=50? Maximum Drain-Source dV/dt dVDS/dt 20 kV/s

5.14. 2sk3929.pdf Size:114K _fuji

2SK3911
2SK3911
2SK3929-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25C unless otherwise specified) Item Symbol Ratings Unit Remarks Equivalent circuit schematic Drain-source voltage VDS 600 V Drain(D) VDSX 600 V VGS=-30V Continuous Drain Current ID 11 A Pulsed Drain Current ID(puls] 44 A Gate-Source Voltage VGS 30 V Maximum Avalanche current IAR 11 A Note *1 Gate(G) Non-Repetitive EAS 439.1 mJ Note *2 Source(S) Maximum Avalanche Energy < Note *1:Tch 150C,Repetitive and Non-repetitive = Repetitive EAR 7 mJ Note *3 Note *2:StartingTch=25C,IAS=5A,L=32.2mH, Maximum Avalanche Energy VCC=60V,RG=50? Maximum Drain-Source dV/dt dVDS/dt 20 kV/s <

See also transistors datasheet: 2SK3844 , 2SK3846 , 2SK3847 , 2SK3869 , 2SK3903 , 2SK3904 , 2SK3905 , 2SK3907 , IRFB3306 , 2SK3934 , 2SK3935 , 2SK3947 , 2SK3994 , 2SK4002 , 2SK4012 , 2SK4015 , 2SK4016 .

Keywords

 2SK3911 Datasheet  2SK3911 Datenblatt  2SK3911 RoHS  2SK3911 Distributor
 2SK3911 Application Notes  2SK3911 Component  2SK3911 Circuit  2SK3911 Schematic
 2SK3911 Equivalent  2SK3911 Cross Reference  2SK3911 Data Sheet  2SK3911 Fiche Technique

(C) 2005 All Right reserved Bipolar || MOSFET || IGBT | | Manufacturer Sites || SMD Code || Packages