MOSFET Datasheet


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2SK3911
  2SK3911
  2SK3911
 
2SK3911
  2SK3911
  2SK3911
 
2SK3911
  2SK3911
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ552L
2SJ552S ..2SK1515
2SK1516 ..2SK2139
2SK214 ..2SK2738
2SK2740 ..2SK3132
2SK3133 ..2SK3633
2SK3637 ..2SK443
2SK444 ..3N206
3N209 ..5LN01M
5LN01S ..AO4714
AO4718 ..AOD2910
AOD2916 ..AON4803
AON4805L ..AOT11C60
AOT11N60 ..AOW284
AOW2918 ..AP16N50W
AP18N20AGS-HF ..AP3990R-HF
AP3990S-HF ..AP4955GM
AP4957AGM ..AP9412GP
AP9414GM ..AP9962BGH-HF
AP9962GH ..APT10090BFLL
APT10090BLL ..APT5560AN
APT6010B2LL ..AUIRF7805Q
AUIRF9540N ..BF1203
BF1204 ..BLF6G10LS-200RN
BLF6G10LS-260PRN ..BSC042NE7NS3G
BSC046N02KSG ..BSS84AKM
BSS84AKS ..BUK7109-75ATE
BUK714R1-40BT ..BUK9516-75B
BUK9518-30 ..BUZ900X4S
BUZ901 ..CED830G
CED83A3 ..CEP16N10L
CEP20A03 ..DMC2004VK
DMC2020USD ..DMP57D5UV
DMP58D0SV ..FDB050AN06A0
FDB060AN08A0 ..FDD5202P
FDD5353 ..FDMC5614P
FDMC6296 ..FDN361BN
FDN372S ..FDS3572
FDS3580 ..FDT86244
FDT86246 ..FQD10N20L
FQD11P06 ..FQPF33N10
FQPF33N10L ..FRM9240H
FRM9240R ..H07N65F
H10N60E ..HAT2020R
HAT2022R ..HR3N200
HRF3205 ..IPA60R600E6
IPA60R750E6 ..IPD040N03LG
IPD042P03L3G ..IPI60R125CP
IPI60R165CP ..IPP80N04S3-06
IPP80N04S3-H4 ..IRF142
IRF143 ..IRF630NS
IRF630S ..IRF740S
IRF741 ..IRF9395M
IRF9410 ..IRFF024
IRFF110 ..IRFN440
IRFN450 ..IRFR220
IRFR220A ..IRFS650A
IRFS654A ..IRFU9024
IRFU9024N ..IRL620A
IRL620S ..IRLU230A
IRLU2703 ..IXFH14N100Q2
IXFH14N60P ..IXFK44N80Q3
IXFK48N50 ..IXFP22N60P3
IXFP230N075T2 ..IXFV22N50PS
IXFV22N60P ..IXTA240N055T7
IXTA24P085T ..IXTH35N25MA
IXTH35N25MB ..IXTP160N075T
IXTP160N10T ..IXTR40P50P
IXTR48P20P ..JANSR2N7396
JANSR2N7398 ..KMB4D5DN60QA
KMB4D5NP55Q ..KU086N10P
KU2303D ..MTB25A04Q8
MTB25N04J3 ..MTN2306ZN3
MTN2310M3 ..MTP452L3
MTP452M3 ..NTB45N06
NTB45N06L ..NTP5863N
NTP5864N ..PHP6N10E
PHP6N50E ..PSMN069-100YS
PSMN070-200B ..RF1K49223
RF1K49224 ..RJK0397DPA
RJK03A4DPA ..RQJ0202VGDQA
RQJ0203WGDQA ..SDF120JAA-D
SDF120JAA-S ..SFS9Z34
SFT1341 ..SMG3402
SMG3403 ..SML50H24
SML50J44 ..SPI11N60C3
SPI11N60CFD ..SSG4920N
SSG4930N ..SSM3K329R
SSM3K333R ..SSQ6N60
SSR1N50 ..STD10N10LT4
STD10N10T4 ..STD95N4LF3
STD9NM50N ..STI200N6F3
STI21N65M5 ..STP18N10FI
STP18N55M5 ..STP60NF03L
STP60NF06 ..STV36N06
STV3NA80 ..TJ8S06M3L
TK07H90A ..TPC6003
TPC6004 ..TPCA8081
TPCA8082 ..UT2312
UT2316 ..WTL2622
WTM2310A ..ZXMP6A13F
ZXMP6A13G ..ZXMS6006SG
 
2SK3911 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

2SK3911 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2SK3911

Type of 2SK3911 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 150

Maximum drain-source voltage |Uds|, V: 600

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 20

Maximum junction temperature (Tj), °C:

Rise Time of 2SK3911 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm:

Package: TO3P(N)

Equivalent transistors for 2SK3911

2SK3911 PDF doc:

1.1. 2sk3911.pdf Size:193K _toshiba

2SK3911
2SK3911
2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII ?-MOSVI) 2SK3911 Switching Regulator Applications Unit: mm Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.22? (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.) Low leakage current: IDSS = 500 ?A (VDS = 600 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k?) VDGR 600 V Gate-source voltage VGSS 30 V DC (Note 1) ID 20 1. Gate Drain current A 2. Drain (heatsink) Pulse (Note 1) IDP 80 3. Source Drain power dissipation (Tc = 25C) PD 150 W JEDEC ? Single pulse avalanche energy EAS 792 mJ (Note 2) JEITA SC-65 Avalanche current IAR 20 A TOSHIBA 2-16C1B Repetitive avalanche energy (Note 3) EAR 15 mJ Weight: 4.6 g (typ.) Channel temperature Tch 150 C Storage temperature

5.1. 2sk3906.pdf Size:179K _toshiba

2SK3911
2SK3911
2SK3906 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH II ?-MOS VI) 2SK3906 Switching Regulator Applications Unit: mm Small gate charge: Qg = 60 nC (typ.) Fast reverse recovery time: trr = 400 ns (typ.) Low drain-source ON-resistance: RDS (ON) = 0.27 ? (typ.) High forward transfer admittance: |Yfs| = 15S (typ.) Low leakage current: IDSS = 500 ?A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k?) VDGR 600 V Gate-source voltage VGSS 30 V 1. Gate 2. Drain(heat sink) DC (Note 1) ID 20 3. Source Drain current A Pulse (Note 1) IDP 80 JEDEC ? Drain power dissipation (Tc = 25C) PD 150 W JEITA SC-65 Single-pulse avalanche energy EAS 792 mJ (Note 2) TOSHIBA 2-16C1B Avalanche current IAR 20 A Weight: 4.6 g (typ.) Repetitive avalanche energy (Note 3) EAR 15 m

5.2. 2sk3904.pdf Size:238K _toshiba

2SK3911
2SK3911
2SK3904 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3904 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.2 ? (typ.) High forward transfer admittance: ?Yfs? = 9.5 S (typ.) Low leakage current: IDSS = 100 ?A (max) (VDS = 450 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 450 V Drain-gate voltage (RGS = 20 k?) VDGR 450 V Gate-source voltage VGSS 30 V DC (Note 1) ID 19 Drain current A 1. GATE Pulse (Note 1) IDP 76 2. DRAIN (HEATSINK) 3. SOURCE Drain power dissipation (Tc = 25C) PD 150 W Single pulse avalanche energy JEDEC ? EAS 820 mJ (Note 2) JEITA SC-65 Avalanche current IAR 19 A TOSHIBA 2-16C1B Repetitive avalanche energy (Note 3) EAR 15 mJ Weight: 4.6 g (typ.) Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Note: Using cont

5.3. 2sk3905.pdf Size:239K _toshiba

2SK3911
2SK3911
2SK3905 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3905 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.25 ? (typ.) High forward transfer admittance: ?Yfs? = 8.2 S (typ.) Low leakage current: IDSS = 100 ?A (max) (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 k?) VDGR 500 V Gate-source voltage VGSS 30 V DC (Note 1) ID 17 Drain current A 1. GATE Pulse (Note 1) IDP 68 2. DRAIN (HEATSINK) 3. SOURCE Drain power dissipation (Tc = 25C) PD 150 W Single pulse avalanche energy JEDEC ? EAS 816 mJ (Note 2) JEITA SC-65 Avalanche current IAR 17 A TOSHIBA 2-16C1B Repetitive avalanche energy (Note 3) EAR 15 mJ Weight: 4.6 g (typ.) Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Note: Using con

5.4. 2sk3934.pdf Size:288K _toshiba

2SK3911
2SK3911
2SK3934 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3934 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.23? (typ.) High forward transfer admittance: |Yfs| = 8.2 S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 k?) VDGR 500 V Gate-source voltage VGSS 30 V DC (Note 1) ID 15 Drain current A Pulse (t = 1 ms) 1: Gate IDP 60 (Note 1) 2: Drain 3: Source Drain power dissipation (Tc = 25C) PD 50 W JEDEC ? Single pulse avalanche energy EAS 1.08 J (Note 2) JEITA SC-67 Avalanche current IAR 15 A TOSHIBA 2-10U1B Repetitive avalanche energy (Note 3) EAR 5.0 mJ Weight: 1.7 g (typ.) Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Note: Using continuous

5.5. 2sk3903.pdf Size:239K _toshiba

2SK3911
2SK3911
2SK3903 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3903 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32 ? (typ.) High forward transfer admittance: ?Yfs? = 7.5 S (typ.) Low leakage current: IDSS = 100 ?A (max) (VDS = 600 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k?) VDGR 600 V Gate-source voltage VGSS 30 V DC (Note 1) ID 14 1. GATE Drain current A 2. DRAIN (HEATSINK) Pulse (Note 1) IDP 56 3. SOURCE Drain power dissipation (Tc = 25C) PD 150 W Single pulse avalanche energy JEDEC ? EAS 806 mJ (Note 2) JEITA SC-65 Avalanche current IAR 14 A TOSHIBA 2-16C1B Repetitive avalanche energy (Note 3) EAR 15 mJ Channel temperature Tch 150 C Weight: 4.6 g (typ.) Storage temperature range Tstg -55~150 C Note: Using c

5.6. 2sk3907.pdf Size:213K _toshiba

2SK3911
2SK3911
2SK3907 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII ?-MOSVI) 2SK3907 Switching Regulator Applications Unit: mm Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.18 ? (typ.) High forward transfer admittance: |Yfs| = 12 S (typ.) Low leakage current: IDSS = 500 ?A (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 k?) VDGR 500 V Gate-source voltage VGSS 30 V DC (Note 1) ID 23 Drain current A 1. GATE Pulse (Note 1) IDP 92 2. DRAIN (HEATSINK) 3. SOURCE Drain power dissipation (Tc = 25C) PD 150 W Single pulse avalanche energy JEDEC ? EAS 552 mJ (Note 2) JEITA SC-65 Avalanche current IAR 23 A TOSHIBA 2-16C1B Repetitive avalanche energy (Note 3) EAR 15 mJ Weight: 4.6 g (typ.) Channel temperature Tch 150 C Storage temperatu

5.7. 2sk3935.pdf Size:313K _toshiba

2SK3911
2SK3911
2SK3935 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3935 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.18? (typ.) High forward transfer admittance : |Yfs| = 10 S (typ.) Low leakage current : IDSS = 100 ?A (max) (VDS = 450 V) Enhancement model : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 450 V Drain-gate voltage (RGS = 20 k?) VDGR 450 V Gate-source voltage VGSS 30 V 1: Gate DC (Note 1) ID 17 A 2: Drain Drain current 3: Source Pulse (Note 1) IDP 68 A Drain power dissipation PD 50 W JEDEC - Single pulse avalanche energy JEITA SC-67 EAS 918 mJ (Note 2) TOSHIBA 2-10U1B Avalanche current IAR 17 A Weight: 1.7 g (typ.) Repetitive avalanche energy (Note 3) EAR 5 mJ Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Note: Using continuously under hea

5.8. 2sk3994.pdf Size:255K _toshiba

2SK3911
2SK3911
2SK3994 TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (?-MOS V) 2SK3994 Switching Regulator, DC/DC Converter Applications Unit: mm Motor Drive Applications Low drain-source ON-resistance : RDS (ON) = 90 m? (typ.) High forward transfer admittance : |Yfs| = 10 S (typ.) Low leakage current : IDSS = 100 ?A (max) (VDS = 250 V) Enhancement mode : Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 250 V Drain-gate voltage (RGS = 20 k?) VDGR 250 V Gate-source voltage VGSS 30 V DC (Note 1) ID 20 A Drain current Pulse (Note 1) IDP 80 A Drain power dissipation (Tc = 25C) PD 45 W JEDEC Single-pulse avalanche energy EAS 487 mJ JEITA SC-67 (Note 2) TOSHIBA 2-10R1B Avalanche current IAR 20 A Repetitive avalanche energy (Note 3) EAR 4.5 mJ Weight: 1.9 g (typ.) Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Note: Using con

5.9. 2sk3947.pdf Size:182K _toshiba

2SK3911
2SK3911
2SK3947 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3947 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.1 ? (typ.) High forward transfer admittance: |Yfs| = 5.0S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k?) VDGR 600 V Gate-source voltage VGSS 30 V DC (Note 1) ID 6 1: Gate Drain current A 2: Drain Pulse (t = 1 ms) IDP 24 3: Source (Note 1) Drain power dissipation (Tc = 25C) PD 40 W Single-pulse avalanche energy EAS 345 mJ JEDEC ? (Note 2) JEITA SC-67 Avalanche current IAR 6 A Repetitive avalanche energy (Note 3) EAR 4 mJ TOSHIBA 2-10U1B Channel temperature Tch 150 C Weight: 1.7 g (typ.) Storage temperature range Tstg -55~150 C Note: Using continuously

5.10. 2sk3936.pdf Size:180K _toshiba

2SK3911
2SK3911
2SK3936 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH II ?-MOS VI) 2SK3936 Switching Regulator Applications Unit: mm Small gate charge: Qg = 60 nC (typ.) Fast reverse recovery time: trr = 380 ns (typ.) Low drain-source ON-resistance: RDS (ON) = 0.2 ? (typ.) High forward transfer admittance: |Yfs| = 16.5 S (typ.) Low leakage current: IDSS = 500 ?A (VDS = 500 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 k?) VDGR 500 V Gate-source voltage VGSS 30 V 1. Gate 2. Drain(heat sink) DC (Note 1) ID 23 3. Source Drain current A Pulse (Note 1) IDP 92 JEDEC ? Drain power dissipation (Tc = 25C) PD 150 W JEITA SC-65 Single-pulse avalanche energy EAS 759 mJ (Note 2) TOSHIBA 2-16C1B Avalanche current IAR 23 A Weight: 4.6 g (typ.) Repetitive avalanche energy (Note 3) EAR 15

5.11. 2sk3940.pdf Size:188K _toshiba

2SK3911
2SK3911
2SK3940 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIII) 2SK3940 Switching Regulator, DC/DC Converter Applications Unit: mm Motor Drive Applications Low drain-source ON-resistance: RDS (ON) = 5.6 m? (typ.) High forward transfer admittance: |Yfs| = 90 S (typ.) Low leakage current: IDSS = 100 A (VDS = 75 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 75 V Drain-gate voltage (RGS = 20 k?) VDGR 75 V Gate-source voltage VGSS 20 V ID 70 DC (Note 1) Drain current A 1. GATE IDP 280 Pulse (Note 1) 2. DRAIN (HEAT SINK) 3. SOURCE Drain power dissipation (Tc = 25C) PD 150 W Single-pulse avalanche energy EAS 444 mJ JEDEC ? (Note 2) Avalanche current IAR 70 A JEITA ? Repetitive avalanche energy (Note 3) EAR 15 mJ TOSHIBA 2-16C1B Channel temperature Tch 175 C Weight: 4.6 g (typ.) Storage temperature range Tstg

5.12. 2sk3929.pdf Size:114K _fuji

2SK3911
2SK3911
2SK3929-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25C unless otherwise specified) Item Symbol Ratings Unit Remarks Equivalent circuit schematic Drain-source voltage VDS 600 V Drain(D) VDSX 600 V VGS=-30V Continuous Drain Current ID 11 A Pulsed Drain Current ID(puls] 44 A Gate-Source Voltage VGS 30 V Maximum Avalanche current IAR 11 A Note *1 Gate(G) Non-Repetitive EAS 439.1 mJ Note *2 Source(S) Maximum Avalanche Energy < Note *1:Tch 150C,Repetitive and Non-repetitive = Repetitive EAR 7 mJ Note *3 Note *2:StartingTch=25C,IAS=5A,L=32.2mH, Maximum Avalanche Energy VCC=60V,RG=50? Maximum Drain-Source dV/dt dVDS/dt 20 kV/s <

5.13. 2sk3932.pdf Size:105K _fuji

2SK3911
2SK3911
2SK3932-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25C unless otherwise specified) Equivalent circuit schematic Item Symbol Ratings Unit Remarks Drain-source voltage VDS 500 V Drain(D) VDSX 500 V VGS=-30V Continuous Drain Current ID 11 A Pulsed Drain Current ID(puls] 44 A Gate-Source Voltage VGS 30 V Gate(G) Maximum Avalanche current IAR 11 A Note *1 Source(S) Non-Repetitive EAS 453.9 mJ Note *2 Maximum Avalanche Energy < Note *1:Tch 150C,Repetitive and Non-repetitive = Repetitive EAR 6.0 mJ Note *3 Note *2:StartingTch=25C,IAS=4.4A,L=43mH, Maximum Avalanche Energy VCC=50V,RG=50? Maximum Drain-Source dV/dt dVDS/dt 20 kV/s

5.14. 2sk3931.pdf Size:101K _fuji

2SK3911
2SK3911
2SK3931-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings Equivalent circuit schematic (Tc=25C unless otherwise specified) Drain(D) Item Symbol Ratings Unit Remarks Drain-source voltage VDS 500 V VDSX 500 V VGS=-30V Continuous Drain Current ID 11 A Pulsed Drain Current ID(puls] 44 A Gate(G) Gate-Source Voltage VGS 30 V Source(S) Maximum Avalanche current IAR 11 A Note *1 Non-Repetitive EAS 453.9 mJ Note *2 < Note *1:Tch 150C,Repetitive and Non-repetitive = Maximum Avalanche Energy Note *2:StartingTch=25C,IAS=4.4A,L=43mH, Repetitive EAR 16.5 mJ Note *3 VCC=50V,RG=50? Maximum Avalanche Energy EAS limited by maximum channel temperature

See also transistors datasheet: 2SK3844 , 2SK3846 , 2SK3847 , 2SK3869 , 2SK3903 , 2SK3904 , 2SK3905 , 2SK3907 , IRFB3306 , 2SK3934 , 2SK3935 , 2SK3947 , 2SK3994 , 2SK4002 , 2SK4012 , 2SK4015 , 2SK4016 .

Keywords

 2SK3911 Datasheet  2SK3911 Datenblatt  2SK3911 RoHS  2SK3911 Distributor
 2SK3911 Application Notes  2SK3911 Component  2SK3911 Circuit  2SK3911 Schematic
 2SK3911 Equivalent  2SK3911 Cross Reference  2SK3911 Data Sheet  2SK3911 Fiche Technique

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