MOSFET Datasheet


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2SK3911
  2SK3911
  2SK3911
 
2SK3911
  2SK3911
  2SK3911
 
2SK3911
  2SK3911
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123W
BSS123Z ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FCPF36N60N
FCPF380N60 ..FDD1600N10ALZ
FDD1600N10ALZD ..FDMA8051L
FDMA86265P ..FDMS8460
FDMS8558S ..FDPF18N20FT
FDPF18N20FT_G ..FDT439N
FDT457N ..FQD12N20L
FQD12N20LTM_F085 ..FQT1N60C
FQT1N80 ..FSF055D
FSF055R ..H5N5006LS
H5N5007P ..HAT2165N
HAT2166H ..HUF75639S_F085A
HUF75645P3 ..IPB072N15N3G
IPB075N04LG ..IPD50N03S2-07
IPD50N03S2L-06 ..IPP037N06L3G
IPP037N08N3G ..IPW60R075CP
IPW60R075CPA ..IRF3703
IRF3704Z ..IRF6641
IRF6643 ..IRF7523D1
IRF7524D1 ..IRF9Z14S
IRF9Z15 ..IRFH7936
IRFH8318 ..IRFP250N
IRFP251 ..IRFR9024
IRFR9024N ..IRFS9530
IRFS9531 ..IRFY430
IRFY430C ..IRLI510A
IRLI520A ..IRLZ30
IRLZ34 ..IXFH28N50Q
IXFH28N60P3 ..IXFL60N80P
IXFL70N60Q2 ..IXFR24N80P
IXFR24N90P ..IXFX250N10P
IXFX25N90 ..IXTA76P10T
IXTA7N60P ..IXTH6N150
IXTH6N50D2 ..IXTP32P05T
IXTP32P20T ..IXTT74N20P
IXTT75N10 ..KF3N80I
KF4N20LD ..KP504E
KP504G ..MCH6445
MCH6448 ..MTBB5B10Q8
MTBB5N10L3 ..MTN3820J3
MTN3K01N3 ..NDB6050L
NDB6051 ..NTD5407N
NTD5413N ..NVMFS4841N
NVTFS4823N ..PMBFJ211
PMBFJ212 ..PSMN4R0-40YS
PSMN4R1-30YLC ..RFD4N06L
RFD4N06LSM ..RJK1028DPA
RJK1028DSP ..RSD140P06
RSD150N06 ..SDF18N50
SDF1NA60JAA ..SFU9034
SFU9110 ..SMG5409
SMK0160 ..SML50L47
SML50M60BFN ..SPD02N80C3
SPD03N50C3 ..SSG4435
SSG4436N ..SSM3K124TU
SSM3K126TU ..SSP6N90A
SSP70N10A ..STB55NF03L
STB55NF06 ..STD5NK52ZD
STD5NK60Z ..STFI10NK60Z
STFI13NK60Z ..STLT30
STM101N ..STP20NF20
STP20NK50Z ..STP6N62K3
STP6N95K5 ..STT3414
STT3418 ..STV7NA60
STV8NA50 ..TK13A45D
TK13A50D ..TPC8014
TPC8016-H ..TPCC8009
TPCC8061-H ..UT40N04
UT4232 ..ZVN3320F
ZVN4106F ..ZXMS6006SG
 
2SK3911 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

2SK3911 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2SK3911

Type of 2SK3911 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 150

Maximum drain-source voltage |Uds|, V: 600

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 20

Maximum junction temperature (Tj), °C:

Rise Time of 2SK3911 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm:

Package: TO3P(N)

Equivalent transistors for 2SK3911

2SK3911 PDF doc:

1.1. 2sk3911.pdf Size:193K _toshiba

2SK3911
2SK3911
2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII ?-MOSVI) 2SK3911 Switching Regulator Applications Unit: mm Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.22? (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.) Low leakage current: IDSS = 500 ?A (VDS = 600 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k?) VDGR 600 V Gate-source voltage VGSS 30 V DC (Note 1) ID 20 1. Gate Drain current A 2. Drain (heatsink) Pulse (Note 1) IDP 80 3. Source Drain power dissipation (Tc = 25C) PD 150 W JEDEC ? Single pulse avalanche energy EAS 792 mJ (Note 2) JEITA SC-65 Avalanche current IAR 20 A TOSHIBA 2-16C1B Repetitive avalanche energy (Note 3) EAR 15 mJ Weight: 4.6 g (typ.) Channel temperature Tch 150 C Storage temperature

4.1. 2sk3918.pdf Size:160K _nec

2SK3911
2SK3911
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3918 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3918 is N-channel MOS FET device that PART NUMBER PACKAGE features a low on-state resistance and excellent switching 2SK3918 TO-251 (MP-3) characteristics, and designed for low voltage high current 2SK3918-ZK TO-252 (MP-3ZK) applications such as DC/DC converter with synchronous rectifier. (TO-251) FEATURES • Low on-state resistance RDS(on)1 = 7.5 mΩ MAX. (VGS = 10 V, ID = 24 A) • Low Ciss: Ciss = 1300 pF TYP. • 5 V drive available ABSOLUTE MAXIMUM RATINGS (TA = 25°C) (TO-252) Drain to Source Voltage (VGS = 0 V) VDSS 25 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±48 A Drain Current (pulse) Note1 ID(pulse) ±192 A Total Power Dissipation (TC = 25°C) PT1 29 W Total Power Dissipation PT2 1.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg -55 to +150 °

5.1. 2sk3906.pdf Size:179K _toshiba

2SK3911
2SK3911
2SK3906 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH II ?-MOS VI) 2SK3906 Switching Regulator Applications Unit: mm Small gate charge: Qg = 60 nC (typ.) Fast reverse recovery time: trr = 400 ns (typ.) Low drain-source ON-resistance: RDS (ON) = 0.27 ? (typ.) High forward transfer admittance: |Yfs| = 15S (typ.) Low leakage current: IDSS = 500 ?A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k?) VDGR 600 V Gate-source voltage VGSS 30 V 1. Gate 2. Drain(heat sink) DC (Note 1) ID 20 3. Source Drain current A Pulse (Note 1) IDP 80 JEDEC ? Drain power dissipation (Tc = 25C) PD 150 W JEITA SC-65 Single-pulse avalanche energy EAS 792 mJ (Note 2) TOSHIBA 2-16C1B Avalanche current IAR 20 A Weight: 4.6 g (typ.) Repetitive avalanche energy (Note 3) EAR 15 m

5.2. 2sk3904.pdf Size:238K _toshiba

2SK3911
2SK3911
2SK3904 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3904 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.2 ? (typ.) High forward transfer admittance: ?Yfs? = 9.5 S (typ.) Low leakage current: IDSS = 100 ?A (max) (VDS = 450 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 450 V Drain-gate voltage (RGS = 20 k?) VDGR 450 V Gate-source voltage VGSS 30 V DC (Note 1) ID 19 Drain current A 1. GATE Pulse (Note 1) IDP 76 2. DRAIN (HEATSINK) 3. SOURCE Drain power dissipation (Tc = 25C) PD 150 W Single pulse avalanche energy JEDEC ? EAS 820 mJ (Note 2) JEITA SC-65 Avalanche current IAR 19 A TOSHIBA 2-16C1B Repetitive avalanche energy (Note 3) EAR 15 mJ Weight: 4.6 g (typ.) Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Note: Using cont

5.3. 2sk3905.pdf Size:239K _toshiba

2SK3911
2SK3911
2SK3905 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3905 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.25 ? (typ.) High forward transfer admittance: ?Yfs? = 8.2 S (typ.) Low leakage current: IDSS = 100 ?A (max) (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 k?) VDGR 500 V Gate-source voltage VGSS 30 V DC (Note 1) ID 17 Drain current A 1. GATE Pulse (Note 1) IDP 68 2. DRAIN (HEATSINK) 3. SOURCE Drain power dissipation (Tc = 25C) PD 150 W Single pulse avalanche energy JEDEC ? EAS 816 mJ (Note 2) JEITA SC-65 Avalanche current IAR 17 A TOSHIBA 2-16C1B Repetitive avalanche energy (Note 3) EAR 15 mJ Weight: 4.6 g (typ.) Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Note: Using con

5.4. 2sk3934.pdf Size:288K _toshiba

2SK3911
2SK3911
2SK3934 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3934 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.23? (typ.) High forward transfer admittance: |Yfs| = 8.2 S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 k?) VDGR 500 V Gate-source voltage VGSS 30 V DC (Note 1) ID 15 Drain current A Pulse (t = 1 ms) 1: Gate IDP 60 (Note 1) 2: Drain 3: Source Drain power dissipation (Tc = 25C) PD 50 W JEDEC ? Single pulse avalanche energy EAS 1.08 J (Note 2) JEITA SC-67 Avalanche current IAR 15 A TOSHIBA 2-10U1B Repetitive avalanche energy (Note 3) EAR 5.0 mJ Weight: 1.7 g (typ.) Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Note: Using continuous

5.5. 2sk3903.pdf Size:239K _toshiba

2SK3911
2SK3911
2SK3903 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3903 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32 ? (typ.) High forward transfer admittance: ?Yfs? = 7.5 S (typ.) Low leakage current: IDSS = 100 ?A (max) (VDS = 600 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k?) VDGR 600 V Gate-source voltage VGSS 30 V DC (Note 1) ID 14 1. GATE Drain current A 2. DRAIN (HEATSINK) Pulse (Note 1) IDP 56 3. SOURCE Drain power dissipation (Tc = 25C) PD 150 W Single pulse avalanche energy JEDEC ? EAS 806 mJ (Note 2) JEITA SC-65 Avalanche current IAR 14 A TOSHIBA 2-16C1B Repetitive avalanche energy (Note 3) EAR 15 mJ Channel temperature Tch 150 C Weight: 4.6 g (typ.) Storage temperature range Tstg -55~150 C Note: Using c

5.6. 2sk3907.pdf Size:213K _toshiba

2SK3911
2SK3911
2SK3907 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII ?-MOSVI) 2SK3907 Switching Regulator Applications Unit: mm Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.18 ? (typ.) High forward transfer admittance: |Yfs| = 12 S (typ.) Low leakage current: IDSS = 500 ?A (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 k?) VDGR 500 V Gate-source voltage VGSS 30 V DC (Note 1) ID 23 Drain current A 1. GATE Pulse (Note 1) IDP 92 2. DRAIN (HEATSINK) 3. SOURCE Drain power dissipation (Tc = 25C) PD 150 W Single pulse avalanche energy JEDEC ? EAS 552 mJ (Note 2) JEITA SC-65 Avalanche current IAR 23 A TOSHIBA 2-16C1B Repetitive avalanche energy (Note 3) EAR 15 mJ Weight: 4.6 g (typ.) Channel temperature Tch 150 C Storage temperatu

5.7. 2sk3935.pdf Size:313K _toshiba

2SK3911
2SK3911
2SK3935 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3935 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.18? (typ.) High forward transfer admittance : |Yfs| = 10 S (typ.) Low leakage current : IDSS = 100 ?A (max) (VDS = 450 V) Enhancement model : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 450 V Drain-gate voltage (RGS = 20 k?) VDGR 450 V Gate-source voltage VGSS 30 V 1: Gate DC (Note 1) ID 17 A 2: Drain Drain current 3: Source Pulse (Note 1) IDP 68 A Drain power dissipation PD 50 W JEDEC - Single pulse avalanche energy JEITA SC-67 EAS 918 mJ (Note 2) TOSHIBA 2-10U1B Avalanche current IAR 17 A Weight: 1.7 g (typ.) Repetitive avalanche energy (Note 3) EAR 5 mJ Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Note: Using continuously under hea

5.8. 2sk3994.pdf Size:255K _toshiba

2SK3911
2SK3911
2SK3994 TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (?-MOS V) 2SK3994 Switching Regulator, DC/DC Converter Applications Unit: mm Motor Drive Applications Low drain-source ON-resistance : RDS (ON) = 90 m? (typ.) High forward transfer admittance : |Yfs| = 10 S (typ.) Low leakage current : IDSS = 100 ?A (max) (VDS = 250 V) Enhancement mode : Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 250 V Drain-gate voltage (RGS = 20 k?) VDGR 250 V Gate-source voltage VGSS 30 V DC (Note 1) ID 20 A Drain current Pulse (Note 1) IDP 80 A Drain power dissipation (Tc = 25C) PD 45 W JEDEC Single-pulse avalanche energy EAS 487 mJ JEITA SC-67 (Note 2) TOSHIBA 2-10R1B Avalanche current IAR 20 A Repetitive avalanche energy (Note 3) EAR 4.5 mJ Weight: 1.9 g (typ.) Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Note: Using con

5.9. 2sk3947.pdf Size:182K _toshiba

2SK3911
2SK3911
2SK3947 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3947 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.1 ? (typ.) High forward transfer admittance: |Yfs| = 5.0S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k?) VDGR 600 V Gate-source voltage VGSS 30 V DC (Note 1) ID 6 1: Gate Drain current A 2: Drain Pulse (t = 1 ms) IDP 24 3: Source (Note 1) Drain power dissipation (Tc = 25C) PD 40 W Single-pulse avalanche energy EAS 345 mJ JEDEC ? (Note 2) JEITA SC-67 Avalanche current IAR 6 A Repetitive avalanche energy (Note 3) EAR 4 mJ TOSHIBA 2-10U1B Channel temperature Tch 150 C Weight: 1.7 g (typ.) Storage temperature range Tstg -55~150 C Note: Using continuously

5.10. 2sk3936.pdf Size:180K _toshiba

2SK3911
2SK3911
2SK3936 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH II ?-MOS VI) 2SK3936 Switching Regulator Applications Unit: mm Small gate charge: Qg = 60 nC (typ.) Fast reverse recovery time: trr = 380 ns (typ.) Low drain-source ON-resistance: RDS (ON) = 0.2 ? (typ.) High forward transfer admittance: |Yfs| = 16.5 S (typ.) Low leakage current: IDSS = 500 ?A (VDS = 500 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 k?) VDGR 500 V Gate-source voltage VGSS 30 V 1. Gate 2. Drain(heat sink) DC (Note 1) ID 23 3. Source Drain current A Pulse (Note 1) IDP 92 JEDEC ? Drain power dissipation (Tc = 25C) PD 150 W JEITA SC-65 Single-pulse avalanche energy EAS 759 mJ (Note 2) TOSHIBA 2-16C1B Avalanche current IAR 23 A Weight: 4.6 g (typ.) Repetitive avalanche energy (Note 3) EAR 15

5.11. 2sk3940.pdf Size:188K _toshiba

2SK3911
2SK3911
2SK3940 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIII) 2SK3940 Switching Regulator, DC/DC Converter Applications Unit: mm Motor Drive Applications Low drain-source ON-resistance: RDS (ON) = 5.6 m? (typ.) High forward transfer admittance: |Yfs| = 90 S (typ.) Low leakage current: IDSS = 100 A (VDS = 75 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 75 V Drain-gate voltage (RGS = 20 k?) VDGR 75 V Gate-source voltage VGSS 20 V ID 70 DC (Note 1) Drain current A 1. GATE IDP 280 Pulse (Note 1) 2. DRAIN (HEAT SINK) 3. SOURCE Drain power dissipation (Tc = 25C) PD 150 W Single-pulse avalanche energy EAS 444 mJ JEDEC ? (Note 2) Avalanche current IAR 70 A JEITA ? Repetitive avalanche energy (Note 3) EAR 15 mJ TOSHIBA 2-16C1B Channel temperature Tch 175 C Weight: 4.6 g (typ.) Storage temperature range Tstg

5.12. 2sk3900.pdf Size:151K _nec

2SK3911
2SK3911
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3900 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3900 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3900-ZP TO-263 (MP-25ZP) FEATURES • Super low on-state resistance (TO-263) RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 41 A) • Low C iss: C iss = 3500 pF TYP. • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 60 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±82 A Drain Current (pulse) Note1 ID(pulse) ±246 A Total Power Dissipation (TC = 25°C) PT1 104 W Total Power Dissipation (TA = 25°C) PT2 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg -55 to +150 °C Single Avalanche Energy Note2 EAS 141 mJ Repetitive Avalanche Current Note3

5.13. 2sk3929.pdf Size:114K _fuji

2SK3911
2SK3911
2SK3929-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25C unless otherwise specified) Item Symbol Ratings Unit Remarks Equivalent circuit schematic Drain-source voltage VDS 600 V Drain(D) VDSX 600 V VGS=-30V Continuous Drain Current ID 11 A Pulsed Drain Current ID(puls] 44 A Gate-Source Voltage VGS 30 V Maximum Avalanche current IAR 11 A Note *1 Gate(G) Non-Repetitive EAS 439.1 mJ Note *2 Source(S) Maximum Avalanche Energy < Note *1:Tch 150C,Repetitive and Non-repetitive = Repetitive EAR 7 mJ Note *3 Note *2:StartingTch=25C,IAS=5A,L=32.2mH, Maximum Avalanche Energy VCC=60V,RG=50? Maximum Drain-Source dV/dt dVDS/dt 20 kV/s <

5.14. 2sk3932.pdf Size:105K _fuji

2SK3911
2SK3911
2SK3932-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25C unless otherwise specified) Equivalent circuit schematic Item Symbol Ratings Unit Remarks Drain-source voltage VDS 500 V Drain(D) VDSX 500 V VGS=-30V Continuous Drain Current ID 11 A Pulsed Drain Current ID(puls] 44 A Gate-Source Voltage VGS 30 V Gate(G) Maximum Avalanche current IAR 11 A Note *1 Source(S) Non-Repetitive EAS 453.9 mJ Note *2 Maximum Avalanche Energy < Note *1:Tch 150C,Repetitive and Non-repetitive = Repetitive EAR 6.0 mJ Note *3 Note *2:StartingTch=25C,IAS=4.4A,L=43mH, Maximum Avalanche Energy VCC=50V,RG=50? Maximum Drain-Source dV/dt dVDS/dt 20 kV/s

5.15. 2sk3931.pdf Size:101K _fuji

2SK3911
2SK3911
2SK3931-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings Equivalent circuit schematic (Tc=25C unless otherwise specified) Drain(D) Item Symbol Ratings Unit Remarks Drain-source voltage VDS 500 V VDSX 500 V VGS=-30V Continuous Drain Current ID 11 A Pulsed Drain Current ID(puls] 44 A Gate(G) Gate-Source Voltage VGS 30 V Source(S) Maximum Avalanche current IAR 11 A Note *1 Non-Repetitive EAS 453.9 mJ Note *2 < Note *1:Tch 150C,Repetitive and Non-repetitive = Maximum Avalanche Energy Note *2:StartingTch=25C,IAS=4.4A,L=43mH, Repetitive EAR 16.5 mJ Note *3 VCC=50V,RG=50? Maximum Avalanche Energy EAS limited by maximum channel temperature

See also transistors datasheet: 2SK3844 , 2SK3846 , 2SK3847 , 2SK3869 , 2SK3903 , 2SK3904 , 2SK3905 , 2SK3907 , IRFB3306 , 2SK3934 , 2SK3935 , 2SK3947 , 2SK3994 , 2SK4002 , 2SK4012 , 2SK4015 , 2SK4016 .

Keywords

 2SK3911 Datasheet  2SK3911 Datenblatt  2SK3911 RoHS  2SK3911 Distributor
 2SK3911 Application Notes  2SK3911 Component  2SK3911 Circuit  2SK3911 Schematic
 2SK3911 Equivalent  2SK3911 Cross Reference  2SK3911 Data Sheet  2SK3911 Fiche Technique

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