MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
2SK3911
  2SK3911
  2SK3911
 
2SK3911
  2SK3911
  2SK3911
 
2SK3911
  2SK3911
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AOD409
AOD4102 ..AON6240
AON6242 ..AP0203GMT-HF
AP02N40H-HF ..AP2306AGEN-HF
AP2306AGN-HF ..AP4409GEM
AP4409GEP-HF ..AP6680BGM-HF
AP6680BGYT-HF ..AP9487GM-HF
AP94T07GH-HF ..AP9974GJ-HF
AP9974GP-HF ..APT5040CNR
APT50M50JVFR ..AUIRFP4368
AUIRFP4410Z ..BF545B
BF545C ..BLF6G27LS-100
BLF6G27LS-135 ..BSC110N06NS3G
BSC118N10NSG ..BSZ110N06NS3G
BSZ120P03NS3EG ..BUK75150-55A
BUK7516-55A ..BUK9614-55
BUK9614-55A ..CEA3252
CEA6200 ..CEF630N
CEF6601 ..CEP840G
CEP840L ..DMG8601UFG
DMG8822UTS ..EFC4612R
EFC4615R ..FDB5680
FDB5690 ..FDD8424H
FDD8424H_F085 ..FDMC86102LZ
FDMC86106LZ ..FDP15N40
FDP15N40 ..FDS6294
FDS6294 ..FK14KM-9
FK14SM-10 ..FQD4P25
FQD5N20L ..FQS4903
FQT13N06 ..FRX130D4
FRX130H1 ..H5N2507P
H5N2508DL ..HAT2096H
HAT2099H ..HUF75339P3
HUF75339S3 ..IPB039N10N3G
IPB041N04NG ..IPD30N03S2L-10
IPD30N03S2L-20 ..IPI90N06S4-04
IPI90N06S4L-04 ..IPS50R520CP
IPU039N03LG ..IRF3205ZS
IRF330 ..IRF6622
IRF6623 ..IRF7501
IRF7503 ..IRF9640
IRF9640S ..IRFH5302
IRFH5302D ..IRFP233
IRFP240 ..IRFR420A
IRFR4615 ..IRFS9143
IRFS9230 ..IRFY044C
IRFY120 ..IRLHM630
IRLHS2242 ..IRLWZ34A
IRLWZ44A ..IXFH24N50
IXFH24N50Q ..IXFL32N120P
IXFL34N100 ..IXFR180N15P
IXFR18N90P ..IXFX20N120
IXFX20N120P ..IXTA60N10T
IXTA60N20T ..IXTH60N20L2
IXTH60N25 ..IXTP2N60P
IXTP2N80 ..IXTT50P085
IXTT50P10 ..KF3N50DS
KF3N50DZ ..KP103K
KP103L ..MCH6331
MCH6336 ..MTB90P06J3
MTB90P06Q8 ..MTN3418N3
MTN3418S3 ..NDB5060
NDB5060L ..NTD4860N
NTD4863N ..NTZD3154N
NTZD3155C ..PMBF4391
PMBF4392 ..PSMN3R0-60ES
PSMN3R0-60PS ..RFD15P06SM
RFD16N03L ..RJK0658DPA
RJK0659DPA ..RRH100P03
RRH140P03 ..SDF230JDA
SDF240 ..SGM0410S
SGM2305A ..SMK1060FJ
SMK1060P ..SML60B21
SML60B25 ..SPP15P10PG
SPP15P10PLH ..SSH40N15A
SSH40N20 ..SSM6J214FE
SSM6J215FE ..SST308
SST309 ..STD16NF06L
STD16NF25 ..STF10NM65N
STF11N52K3 ..STK22N06
STK23N05L ..STP22NF03L
STP22NM60N ..STP7NA40
STP7NA40FI ..STW14NK50Z
STW15N50 ..TK13J65U
TK13P25D ..TPC8026
TPC8027 ..TPCC8074
TPCC8076 ..UT4435
UT4446 ..ZVN4306AV
ZVN4306G ..ZXMS6006SG
 
2SK3911 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

2SK3911 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2SK3911

Type of 2SK3911 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 150

Maximum drain-source voltage |Uds|, V: 600

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 20

Maximum junction temperature (Tj), °C:

Rise Time of 2SK3911 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm:

Package: TO3P(N)

Equivalent transistors for 2SK3911

2SK3911 PDF doc:

1.1. 2sk3911.pdf Size:193K _toshiba

2SK3911
2SK3911
2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII ?-MOSVI) 2SK3911 Switching Regulator Applications Unit: mm Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.22? (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.) Low leakage current: IDSS = 500 ?A (VDS = 600 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k?) VDGR 600 V Gate-source voltage VGSS 30 V DC (Note 1) ID 20 1. Gate Drain current A 2. Drain (heatsink) Pulse (Note 1) IDP 80 3. Source Drain power dissipation (Tc = 25C) PD 150 W JEDEC ? Single pulse avalanche energy EAS 792 mJ (Note 2) JEITA SC-65 Avalanche current IAR 20 A TOSHIBA 2-16C1B Repetitive avalanche energy (Note 3) EAR 15 mJ Weight: 4.6 g (typ.) Channel temperature Tch 150 C Storage temperature

5.1. 2sk3906.pdf Size:179K _toshiba

2SK3911
2SK3911
2SK3906 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH II ?-MOS VI) 2SK3906 Switching Regulator Applications Unit: mm Small gate charge: Qg = 60 nC (typ.) Fast reverse recovery time: trr = 400 ns (typ.) Low drain-source ON-resistance: RDS (ON) = 0.27 ? (typ.) High forward transfer admittance: |Yfs| = 15S (typ.) Low leakage current: IDSS = 500 ?A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k?) VDGR 600 V Gate-source voltage VGSS 30 V 1. Gate 2. Drain(heat sink) DC (Note 1) ID 20 3. Source Drain current A Pulse (Note 1) IDP 80 JEDEC ? Drain power dissipation (Tc = 25C) PD 150 W JEITA SC-65 Single-pulse avalanche energy EAS 792 mJ (Note 2) TOSHIBA 2-16C1B Avalanche current IAR 20 A Weight: 4.6 g (typ.) Repetitive avalanche energy (Note 3) EAR 15 m

5.2. 2sk3904.pdf Size:238K _toshiba

2SK3911
2SK3911
2SK3904 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3904 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.2 ? (typ.) High forward transfer admittance: ?Yfs? = 9.5 S (typ.) Low leakage current: IDSS = 100 ?A (max) (VDS = 450 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 450 V Drain-gate voltage (RGS = 20 k?) VDGR 450 V Gate-source voltage VGSS 30 V DC (Note 1) ID 19 Drain current A 1. GATE Pulse (Note 1) IDP 76 2. DRAIN (HEATSINK) 3. SOURCE Drain power dissipation (Tc = 25C) PD 150 W Single pulse avalanche energy JEDEC ? EAS 820 mJ (Note 2) JEITA SC-65 Avalanche current IAR 19 A TOSHIBA 2-16C1B Repetitive avalanche energy (Note 3) EAR 15 mJ Weight: 4.6 g (typ.) Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Note: Using cont

5.3. 2sk3905.pdf Size:239K _toshiba

2SK3911
2SK3911
2SK3905 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3905 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.25 ? (typ.) High forward transfer admittance: ?Yfs? = 8.2 S (typ.) Low leakage current: IDSS = 100 ?A (max) (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 k?) VDGR 500 V Gate-source voltage VGSS 30 V DC (Note 1) ID 17 Drain current A 1. GATE Pulse (Note 1) IDP 68 2. DRAIN (HEATSINK) 3. SOURCE Drain power dissipation (Tc = 25C) PD 150 W Single pulse avalanche energy JEDEC ? EAS 816 mJ (Note 2) JEITA SC-65 Avalanche current IAR 17 A TOSHIBA 2-16C1B Repetitive avalanche energy (Note 3) EAR 15 mJ Weight: 4.6 g (typ.) Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Note: Using con

5.4. 2sk3934.pdf Size:288K _toshiba

2SK3911
2SK3911
2SK3934 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3934 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.23? (typ.) High forward transfer admittance: |Yfs| = 8.2 S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 k?) VDGR 500 V Gate-source voltage VGSS 30 V DC (Note 1) ID 15 Drain current A Pulse (t = 1 ms) 1: Gate IDP 60 (Note 1) 2: Drain 3: Source Drain power dissipation (Tc = 25C) PD 50 W JEDEC ? Single pulse avalanche energy EAS 1.08 J (Note 2) JEITA SC-67 Avalanche current IAR 15 A TOSHIBA 2-10U1B Repetitive avalanche energy (Note 3) EAR 5.0 mJ Weight: 1.7 g (typ.) Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Note: Using continuous

5.5. 2sk3903.pdf Size:239K _toshiba

2SK3911
2SK3911
2SK3903 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3903 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32 ? (typ.) High forward transfer admittance: ?Yfs? = 7.5 S (typ.) Low leakage current: IDSS = 100 ?A (max) (VDS = 600 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k?) VDGR 600 V Gate-source voltage VGSS 30 V DC (Note 1) ID 14 1. GATE Drain current A 2. DRAIN (HEATSINK) Pulse (Note 1) IDP 56 3. SOURCE Drain power dissipation (Tc = 25C) PD 150 W Single pulse avalanche energy JEDEC ? EAS 806 mJ (Note 2) JEITA SC-65 Avalanche current IAR 14 A TOSHIBA 2-16C1B Repetitive avalanche energy (Note 3) EAR 15 mJ Channel temperature Tch 150 C Weight: 4.6 g (typ.) Storage temperature range Tstg -55~150 C Note: Using c

5.6. 2sk3907.pdf Size:213K _toshiba

2SK3911
2SK3911
2SK3907 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII ?-MOSVI) 2SK3907 Switching Regulator Applications Unit: mm Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.18 ? (typ.) High forward transfer admittance: |Yfs| = 12 S (typ.) Low leakage current: IDSS = 500 ?A (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 k?) VDGR 500 V Gate-source voltage VGSS 30 V DC (Note 1) ID 23 Drain current A 1. GATE Pulse (Note 1) IDP 92 2. DRAIN (HEATSINK) 3. SOURCE Drain power dissipation (Tc = 25C) PD 150 W Single pulse avalanche energy JEDEC ? EAS 552 mJ (Note 2) JEITA SC-65 Avalanche current IAR 23 A TOSHIBA 2-16C1B Repetitive avalanche energy (Note 3) EAR 15 mJ Weight: 4.6 g (typ.) Channel temperature Tch 150 C Storage temperatu

5.7. 2sk3935.pdf Size:313K _toshiba

2SK3911
2SK3911
2SK3935 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3935 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.18? (typ.) High forward transfer admittance : |Yfs| = 10 S (typ.) Low leakage current : IDSS = 100 ?A (max) (VDS = 450 V) Enhancement model : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 450 V Drain-gate voltage (RGS = 20 k?) VDGR 450 V Gate-source voltage VGSS 30 V 1: Gate DC (Note 1) ID 17 A 2: Drain Drain current 3: Source Pulse (Note 1) IDP 68 A Drain power dissipation PD 50 W JEDEC - Single pulse avalanche energy JEITA SC-67 EAS 918 mJ (Note 2) TOSHIBA 2-10U1B Avalanche current IAR 17 A Weight: 1.7 g (typ.) Repetitive avalanche energy (Note 3) EAR 5 mJ Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Note: Using continuously under hea

5.8. 2sk3994.pdf Size:255K _toshiba

2SK3911
2SK3911
2SK3994 TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (?-MOS V) 2SK3994 Switching Regulator, DC/DC Converter Applications Unit: mm Motor Drive Applications Low drain-source ON-resistance : RDS (ON) = 90 m? (typ.) High forward transfer admittance : |Yfs| = 10 S (typ.) Low leakage current : IDSS = 100 ?A (max) (VDS = 250 V) Enhancement mode : Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 250 V Drain-gate voltage (RGS = 20 k?) VDGR 250 V Gate-source voltage VGSS 30 V DC (Note 1) ID 20 A Drain current Pulse (Note 1) IDP 80 A Drain power dissipation (Tc = 25C) PD 45 W JEDEC Single-pulse avalanche energy EAS 487 mJ JEITA SC-67 (Note 2) TOSHIBA 2-10R1B Avalanche current IAR 20 A Repetitive avalanche energy (Note 3) EAR 4.5 mJ Weight: 1.9 g (typ.) Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Note: Using con

5.9. 2sk3947.pdf Size:182K _toshiba

2SK3911
2SK3911
2SK3947 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3947 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.1 ? (typ.) High forward transfer admittance: |Yfs| = 5.0S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k?) VDGR 600 V Gate-source voltage VGSS 30 V DC (Note 1) ID 6 1: Gate Drain current A 2: Drain Pulse (t = 1 ms) IDP 24 3: Source (Note 1) Drain power dissipation (Tc = 25C) PD 40 W Single-pulse avalanche energy EAS 345 mJ JEDEC ? (Note 2) JEITA SC-67 Avalanche current IAR 6 A Repetitive avalanche energy (Note 3) EAR 4 mJ TOSHIBA 2-10U1B Channel temperature Tch 150 C Weight: 1.7 g (typ.) Storage temperature range Tstg -55~150 C Note: Using continuously

5.10. 2sk3936.pdf Size:180K _toshiba

2SK3911
2SK3911
2SK3936 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH II ?-MOS VI) 2SK3936 Switching Regulator Applications Unit: mm Small gate charge: Qg = 60 nC (typ.) Fast reverse recovery time: trr = 380 ns (typ.) Low drain-source ON-resistance: RDS (ON) = 0.2 ? (typ.) High forward transfer admittance: |Yfs| = 16.5 S (typ.) Low leakage current: IDSS = 500 ?A (VDS = 500 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 k?) VDGR 500 V Gate-source voltage VGSS 30 V 1. Gate 2. Drain(heat sink) DC (Note 1) ID 23 3. Source Drain current A Pulse (Note 1) IDP 92 JEDEC ? Drain power dissipation (Tc = 25C) PD 150 W JEITA SC-65 Single-pulse avalanche energy EAS 759 mJ (Note 2) TOSHIBA 2-16C1B Avalanche current IAR 23 A Weight: 4.6 g (typ.) Repetitive avalanche energy (Note 3) EAR 15

5.11. 2sk3940.pdf Size:188K _toshiba

2SK3911
2SK3911
2SK3940 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIII) 2SK3940 Switching Regulator, DC/DC Converter Applications Unit: mm Motor Drive Applications Low drain-source ON-resistance: RDS (ON) = 5.6 m? (typ.) High forward transfer admittance: |Yfs| = 90 S (typ.) Low leakage current: IDSS = 100 A (VDS = 75 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 75 V Drain-gate voltage (RGS = 20 k?) VDGR 75 V Gate-source voltage VGSS 20 V ID 70 DC (Note 1) Drain current A 1. GATE IDP 280 Pulse (Note 1) 2. DRAIN (HEAT SINK) 3. SOURCE Drain power dissipation (Tc = 25C) PD 150 W Single-pulse avalanche energy EAS 444 mJ JEDEC ? (Note 2) Avalanche current IAR 70 A JEITA ? Repetitive avalanche energy (Note 3) EAR 15 mJ TOSHIBA 2-16C1B Channel temperature Tch 175 C Weight: 4.6 g (typ.) Storage temperature range Tstg

5.12. 2sk3929.pdf Size:114K _fuji

2SK3911
2SK3911
2SK3929-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25C unless otherwise specified) Item Symbol Ratings Unit Remarks Equivalent circuit schematic Drain-source voltage VDS 600 V Drain(D) VDSX 600 V VGS=-30V Continuous Drain Current ID 11 A Pulsed Drain Current ID(puls] 44 A Gate-Source Voltage VGS 30 V Maximum Avalanche current IAR 11 A Note *1 Gate(G) Non-Repetitive EAS 439.1 mJ Note *2 Source(S) Maximum Avalanche Energy < Note *1:Tch 150C,Repetitive and Non-repetitive = Repetitive EAR 7 mJ Note *3 Note *2:StartingTch=25C,IAS=5A,L=32.2mH, Maximum Avalanche Energy VCC=60V,RG=50? Maximum Drain-Source dV/dt dVDS/dt 20 kV/s <

5.13. 2sk3932.pdf Size:105K _fuji

2SK3911
2SK3911
2SK3932-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25C unless otherwise specified) Equivalent circuit schematic Item Symbol Ratings Unit Remarks Drain-source voltage VDS 500 V Drain(D) VDSX 500 V VGS=-30V Continuous Drain Current ID 11 A Pulsed Drain Current ID(puls] 44 A Gate-Source Voltage VGS 30 V Gate(G) Maximum Avalanche current IAR 11 A Note *1 Source(S) Non-Repetitive EAS 453.9 mJ Note *2 Maximum Avalanche Energy < Note *1:Tch 150C,Repetitive and Non-repetitive = Repetitive EAR 6.0 mJ Note *3 Note *2:StartingTch=25C,IAS=4.4A,L=43mH, Maximum Avalanche Energy VCC=50V,RG=50? Maximum Drain-Source dV/dt dVDS/dt 20 kV/s

5.14. 2sk3931.pdf Size:101K _fuji

2SK3911
2SK3911
2SK3931-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings Equivalent circuit schematic (Tc=25C unless otherwise specified) Drain(D) Item Symbol Ratings Unit Remarks Drain-source voltage VDS 500 V VDSX 500 V VGS=-30V Continuous Drain Current ID 11 A Pulsed Drain Current ID(puls] 44 A Gate(G) Gate-Source Voltage VGS 30 V Source(S) Maximum Avalanche current IAR 11 A Note *1 Non-Repetitive EAS 453.9 mJ Note *2 < Note *1:Tch 150C,Repetitive and Non-repetitive = Maximum Avalanche Energy Note *2:StartingTch=25C,IAS=4.4A,L=43mH, Repetitive EAR 16.5 mJ Note *3 VCC=50V,RG=50? Maximum Avalanche Energy EAS limited by maximum channel temperature

See also transistors datasheet: 2SK3844 , 2SK3846 , 2SK3847 , 2SK3869 , 2SK3903 , 2SK3904 , 2SK3905 , 2SK3907 , IRFB3306 , 2SK3934 , 2SK3935 , 2SK3947 , 2SK3994 , 2SK4002 , 2SK4012 , 2SK4015 , 2SK4016 .

Keywords

 2SK3911 Datasheet  2SK3911 Datenblatt  2SK3911 RoHS  2SK3911 Distributor
 2SK3911 Application Notes  2SK3911 Component  2SK3911 Circuit  2SK3911 Schematic
 2SK3911 Equivalent  2SK3911 Cross Reference  2SK3911 Data Sheet  2SK3911 Fiche Technique

(C) 2005 All Right reserved Bipolar || MOSFET || IGBT | | Manufacturer Sites || SMD Code || Packages