MOSFET Datasheet



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2SK4110
  2SK4110
  2SK4110
 
2SK4110
  2SK4110
  2SK4110
 
2SK4110
  2SK4110
 
 
List
03N06 ..2N5116
2N5196 ..2N6798
2N6798JANTX ..2N7272H3
2N7272H4 ..2SJ365
2SJ368 ..2SK1082
2SK1086 ..2SK1459LS
2SK146 ..2SK1888
2SK1889 ..2SK2333
2SK2339 ..2SK2706
2SK2707 ..2SK3067
2SK3068 ..2SK3467
2SK3469-01MR ..2SK4016
2SK4017 ..2SK901
2SK902 ..3SK180-6
3SK181 ..7N50
7N50A ..AO4842
AO4850 ..AOD4185
AOD4186 ..AON6298
AON6400 ..AOT254L
AOT25S65 ..AOWF2606
AOWF412 ..AP1RC03GMT-HF
AP20N15AGH-HF ..AP40T03GH
AP40T03GI ..AP60T03GH-HF
AP60T03GI ..AP9466GH
AP9466GJ ..AP9971GD
AP9971GH ..APM9410K
APM9424 ..APT20M38BVR
APT20M38SVR ..APT8015JVFR
APT8015JVR ..AUIRFR2607Z
AUIRFR2905Z ..BF904
BF904A ..BLF6G38S-25
BLF7G10L-250 ..BSB019N03LXG
BSB024N03LXG ..BSR92P
BSS100 ..BUK653R3-30C
BUK653R4-40C ..BUK9214-30A
BUK9215-55A ..BUZ50A-220M
BUZ50A-220SM ..CED16N10
CED16N10L ..CEP02N65G
CEP02N6A ..CL616BA
CLY2 ..DMN62D1SFB
DMN66D0LDW ..FCP110N65F
FCP11N60 ..FDC6302P
FDC6303N ..FDG6335N
FDG8842CZ ..FDMS3660AS
FDMS3660S ..FDP5680
FDP5690 ..FDS8449
FDS8449_F085 ..FQA44N30
FQA46N15 ..FQPF11N50CF
FQPF11P06 ..FRM9130R
FRM9140D ..FTD02N70
FTD04N60A ..H5N3003P
H5N3004P ..HAT2137H
HAT2139H ..HUF75545P3
HUF75545S3S ..IPB049NE7N3G
IPB050N06NG ..IPD30N06S2L-13
IPD30N06S2L-23 ..IPI90R800C3
IPL60R199CP ..IPU103N08N3G
IPU135N03LG ..IRF3305
IRF3315 ..IRF6621
IRF6622 ..IRF7495
IRF7501 ..IRF9633
IRF9640 ..IRFH5250D
IRFH5255 ..IRFP230
IRFP231 ..IRFR411
IRFR420 ..IRFS9133
IRFS9140 ..IRFW840A
IRFWZ14A ..IRLD024
IRLD110 ..IRLW540A
IRLW610A ..IXFH22N55
IXFH22N60P ..IXFK90N20
IXFK90N20Q ..IXFR15N100Q3
IXFR15N80Q ..IXFX170N20T
IXFX180N07 ..IXTA50N20P
IXTA50N25T ..IXTH50P085
IXTH50P10 ..IXTP24P085T
IXTP260N055T2 ..IXTT360N055T2
IXTT36N50P ..KF13N50F
KF13N50P ..KMC7D0CN20C
KMC7D0CN20CA ..LS3954
LS3954A ..MTB20P03L3
MTB22N04J3 ..MTN2302V3
MTN2304M3 ..MTP4411M3
MTP4411Q8 ..NTA7002N
NTB25P06 ..NTNUS3171PZ
NTP2955 ..P0903BEA
P0903BIS ..P45N03LTFG
P5002CDG ..PHB42N03LT
PHB44N06LT ..PMF3800SN
PMF400UN ..PSMN5R0-100PS
PSMN5R0-30YL ..RFD12N06RLE
RFD12N06RLESM ..RJK0454DPB
RJK0455DPB ..RQK0605JGDQA
RQK0606KGDQA ..SDF10N90
SDF11N100GAF ..SFR9220
SFR9224 ..SMG2301
SMG2301P ..SML4080CN
SML4080GN ..SPA03N60C3
SPA04N50C3 ..SSD40P04-20D
SSD40P04-20DE ..SSF4N60G
SSF4N80AS ..SSG4940NC
SSG4942N ..SSM3K36MFV
SSM3K36TU ..SSPL6005
SSPL6022 ..STB458D
STB45NF06 ..STD5N20T4
STD5N52K3 ..STF8N65M5
STF8NK100Z ..STL90N3LLH6
STL9N3LLH5 ..STP20N06
STP20N06FI ..STP656F
STP65NF06 ..STT03N20
STT04N20 ..STV55N05L
STV55N06L ..TK12A50D
TK12A53D ..TPC6109-H
TPC6110 ..TPCA8A02-H
TPCA8A04-H ..UT3404
UT3406 ..YW3407
ZDM4206N ..ZXMP6A18DN8
ZXMP6A18K ..ZXMS6006SG
 
2SK4110 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

2SK4110 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2SK4110

Type of 2SK4110 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 40

Maximum drain-source voltage |Uds|, V: 600

Maximum gate-source voltage |Ugs|, V: 30

Maximum drain current |Id|, A: 6

Maximum junction temperature (Tj), °C: 150

Rise Time of 2SK4110 transistor (tr), nS: 20

Drain-source Capacitance (Cd), pF: 110

Maximum drain-source on-state resistance (Rds), Ohm: 1.25

Package: TO220NIS

Equivalent transistors for 2SK4110 - Cross-Reference Search

2SK4110 PDF doc:

1.1. 2sk4110.pdf Size:202K _toshiba

2SK4110
2SK4110
2SK4110 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4110 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.9 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 kΩ) VDGR 600 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 6 Drain current A Pulse (t = 1 ms) IDP 24 (Note 1) JEDEC ― Drain power dissipation (Tc = 25°C) PD 40 W JEITA SC-67 Single pulse avalanche energy EAS 345 mJ TOSHIBA 2-10R1B (Note 2) Avalanche current IAR 6 A Weight: 1.9 g (typ.) Repetitive avalanche energy (Note 3) EAR 4 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55 to 150 °C Note: Using continuously u

4.1. 2sk4111.pdf Size:240K _toshiba

2SK4110
2SK4110
2SK4111 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4111 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.5S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 kΩ) VDGR 600 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 10 JEDEC — Drain current A Pulse (t = 1 ms) IDP 40 (Note 1) JEITA SC-67 Drain power dissipation (Tc = 25°C) PD 45 W TOSHIBA 2-10R1B Single pulse avalanche energy EAS 363 mJ Weight: 1.9 g (typ.) (Note 2) Avalanche current IAR 10 A Repetitive avalanche energy (Note 3) EAR 4.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55 to 150 °C Note: Using conti

4.2. 2sk4112.pdf Size:210K _toshiba

2SK4110
2SK4110
2SK4112 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4112 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) • High forward transfer admittance: |Yfs| = 5.5S (typ.) • Low leakage current: IDSS = 100μA (VDS = 600 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 kΩ) VDGR 600 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 10 Drain current A Pulse (t = 1 ms) IDP 30 (Note 1) Drain power dissipation (Tc = 25°C) PD 45 W JEDEC ― Single pulse avalanche energy EAS 251 mJ (Note 2) JEITA SC-67 Avalanche current IAR 10 A TOSHIBA 2-10R1B Repetitive avalanche energy (Note 3) EAR 4.5 mJ Weight: 1.9 g (typ.) Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Note: Using continuously under

4.3. 2sk4115_100129.pdf Size:343K _toshiba

2SK4110
2SK4110
2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?- MOS?) 2SK4115 Switching Regulator Applications Unit: mm 3.20.2 15.9max. Low drain-source ON-resistance: RDS (ON) = 1.6 ? (typ.) High forward transfer admittance: ?Yfs? = 5.0 S (typ.) Low leakage current: IDSS = 100 ?A (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 2.00.3 Absolute Maximum Ratings (Ta = 25C) 1.0 +0.3 -0.25 Characteristic Symbol Rating Unit 5.450.2 5.450.2 Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 k?) VDGR 900 V Gate-source voltage VGSS 30 V 1 2 3 DC (Note 1) ID 7 1. GATE Drain current A 2. DRAIN (HEATSINK) Pulse (Note 1) IDP 21 3. SOURCE Drain power dissipation (Tc = 25C) PD 150 W JEDEC ? Single pulse avalanche energy EAS 491 mJ (Note 2) JEITA SC-65 Avalanche current IAR 7 A TOSHIBA 2-16C1B Repetitive avalanche energy (Note 3) EAR 15 mJ Weight: 4.6 g (typ.) Channel te

4.4. 2sk4113.pdf Size:210K _toshiba

2SK4110
2SK4110
2SK4113 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK4113 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 2.0Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 720 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 kΩ) VDGR 900 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 5 Drain current A Pulse (t = 1 ms) IDP 15 (Note 1) Drain power dissipation (Tc = 25°C) PD 45 W Single pulse avalanche energy EAS 595 mJ (Note 2) JEDEC ― Avalanche current IAR 5 A JEITA SC-67 Repetitive avalanche energy (Note 3) EAR 4.5 mJ TOSHIBA 2-10R1B Channel temperature Tch 150 °C Weight: 1.9 g (typ.) Storage temperature range Tstg -55~150 °C Note: Using continuously under

4.5. 2sk4114.pdf Size:162K _toshiba

2SK4110
2SK4110
2SK4114 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV) 2SK4114 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 2.2 Ω (typ.) • High forward transfer admittance: |Yfs| = 3.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) • Enhancement model: Vth = 4.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 kΩ) VDGR 900 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 5 Drain current A Pulse (t = 1 ms) IDP 15 (Note 1) Drain power dissipation (Tc = 25°C) PD 45 W Single pulse avalanche energy EAS 595 mJ JEDEC ― (Note 2) Avalanche current IAR 5 A JEITA SC-67 Repetitive avalanche energy (Note 3) EAR 4.5 mJ TOSHIBA 2-10R1B Channel temperature Tch 150 °C Weight: 1.9 g (typ.) Storage temperature range Tstg -55~150 °C Note: Using continuousl

4.6. 2sk4117ls.pdf Size:270K _sanyo

2SK4110
2SK4110
Ordering number : ENA0791A 2SK4117LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4117LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 400 V Gate-to-Source Voltage VGSS 30 V IDc*1 Limited only by maximum temperature 15 A Drain Current (DC) IDpack*2 Tc=25C (SANYOs ideal heat dissipation condition)*3 10.4 A Drain Current (Pulse) IDP PW?10s, duty cycle?1% 47 A 2.0 W Allowable Power Dissipation PD Tc=25C (SANYOs ideal heat dissipation condition)*3 35 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *4 EAS 296 mJ Avalanche Current *5 IAV 15 A *1 Shows chip ca

4.7. 2sk4116ls.pdf Size:270K _sanyo

2SK4110
2SK4110
Ordering number : ENA0790A 2SK4116LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4116LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 400 V Gate-to-Source Voltage VGSS 30 V IDc*1 Limited only by maximum temperature 12 A Drain Current (DC) IDpack*2 Tc=25C (SANYOs ideal heat dissipation condition)*3 8.9 A Drain Current (Pulse) IDP PW?10s, duty cycle?1% 38 A 2.0 W Allowable Power Dissipation PD Tc=25C (SANYOs ideal heat dissipation condition)*3 33 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *4 EAS 474 mJ Avalanche Current *5 IAV 12 A *1 Shows chip cap

See also transistors datasheet: 2SK4021 , 2SK4022 , 2SK4103 , 2SK4104 , 2SK4105 , 2SK4106 , 2SK4107 , 2SK4108 , 2SK2996 , 2SK4111 , 2SK4112 , 2SK4113 , 2SK4114 , TJ120F06J3 , TK07H90A , TK09H90A , TK100F04K3L .

Keywords

 2SK4110 Datasheet  2SK4110 Datenblatt  2SK4110 RoHS  2SK4110 Distributor
 2SK4110 Application Notes  2SK4110 Component  2SK4110 Circuit  2SK4110 Schematic
 2SK4110 Equivalent  2SK4110 Cross Reference  2SK4110 Data Sheet  2SK4110 Fiche Technique

 

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