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2SK4110 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK4110

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 20 nS

Drain-Source Capacitance (Cd): 110 pF

Maximum Drain-Source On-State Resistance (Rds): 1.25 Ohm

Package: TO220NIS

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2SK4110 PDF doc:

1.1. 2sk4110.pdf Size:202K _toshiba

2SK4110
2SK4110

2SK4110 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4110 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.9 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Ma

4.1. 2sk4111.pdf Size:240K _toshiba

2SK4110
2SK4110

2SK4111 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4111 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.5S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolu

4.2. 2sk4112.pdf Size:210K _toshiba

2SK4110
2SK4110

2SK4112 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4112 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) • High forward transfer admittance: |Yfs| = 5.5S (typ.) • Low leakage current: IDSS = 100μA (VDS = 600 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

4.3. 2sk4115_100129.pdf Size:343K _toshiba

2SK4110
2SK4110

2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?- MOS?) 2SK4115 Switching Regulator Applications Unit: mm 3.20.2 15.9max. Low drain-source ON-resistance: RDS (ON) = 1.6 ? (typ.) High forward transfer admittance: ?Yfs? = 5.0 S (typ.) Low leakage current: IDSS = 100 ?A (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

4.4. 2sk4113.pdf Size:210K _toshiba

2SK4110
2SK4110

2SK4113 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK4113 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 2.0Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 720 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

4.5. 2sk4114.pdf Size:162K _toshiba

2SK4110
2SK4110

2SK4114 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV) 2SK4114 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 2.2 Ω (typ.) • High forward transfer admittance: |Yfs| = 3.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) • Enhancement model: Vth = 4.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Abso

4.6. 2sk4117ls.pdf Size:270K _sanyo

2SK4110
2SK4110

Ordering number : ENA0791A 2SK4117LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4117LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute

4.7. 2sk4116ls.pdf Size:270K _sanyo

2SK4110
2SK4110

Ordering number : ENA0790A 2SK4116LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4116LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute

Datasheet: 2SK4021 , 2SK4022 , 2SK4103 , 2SK4104 , 2SK4105 , 2SK4106 , 2SK4107 , 2SK4108 , 2SK2996 , 2SK4111 , 2SK4112 , 2SK4113 , 2SK4114 , TJ120F06J3 , TK07H90A , TK09H90A , TK100F04K3L .

 


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