TK15J60T MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: TK15J60T

Type of TK15J60T transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 170

Maximum drain-source voltage |Uds|, V: 600V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 15

Maximum junction temperature (Tj), °C:

Rise Time of TK15J60T transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm:

Package: TO3P(N)

Equivalent transistors for TK15J60T

TK15J60T PDF documents for downloads:

3.1. tk15j60u_en_datasheet_100820.pdf Size:185K _toshiba2

TK15J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK15J60U Switching Regulator Applications Unit: mm 15.9 MAX. Ô3.2 ± 0.2 • Low drain-source ON-resistance: RDS (ON) = 0.24 ? (typ.) • High forward transfer admittance: ?Yfs? = 8.5 S (typ.) • Low leakage current: IDSS = 100 ?A (max) (VDS = 600 V) • Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) 2.0 ± 0.3 Characteristics Symbol Rating Unit 1.0 +0.3 -0.25 Drain-source voltage VDSS 600 V 5.45 ± 0.2 5.45 ± 0.2 Gate-source voltage VGSS ±30 V DC (Note 1) ID 15 Drain current A Pulse (Note 1) IDP 30 1 2 3 Drain power dissipation (Tc = 25°C) PD 170 W 1. Gate 2. Drain(heat sink) Single pulse avalanche energy 3. Source EAS 81 mJ (Note 2) JEDEC ? Avalanche current IAR 11 A JEITA SC-65 Repetitive avalanche energy (Note 3) EAR 17 mJ TOSHIBA 2-16C1B Channel temperature Tch 150 °C Storage temperature range Tstg -55 to

5.1. tk15j50d_en_datasheet_110425.pdf Size:184K _toshiba2

TK15J50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) TK15J50D Switching Regulator Applications Unit: mm 15.9 MAX. Ô3.2 ± 0.2 • Low drain-source ON resistance: RDS (ON) = 0.33 ? (typ.) • High forward transfer admittance: ?Yfs? = 8.0 S (typ.) • Low leakage current: IDSS = 10 ?A (max) (VDS = 500 V) • Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 2.0 ± 0.3 Absolute Maximum Ratings (Ta = 25°C) 1.0 +0.3 -0.25 Characteristics Symbol Rating Unit 5.45 ± 0.2 5.45 ± 0.2 Drain-source voltage VDSS 500 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 15 1 2 3 Drain current A Pulse (Note 1) IDP 60 1: Gate Drain power dissipation (Tc = 25°C) 2: Drain (Heatsink) PD 210 W 3: Source Single pulse avalanche energy EAS 360 mJ (Note 2) JEDEC ? Avalanche current IAR 15 A JEITA SC-65 Repetitive avalanche energy (Note 3) EAR 21 mJ TOSHIBA 2-16C1B Channel temperature Tch 150 °C Weight : 4.6 g (typ.) Storage tempera

See also transistors datasheet: TK07H90A , TK09H90A , TK100F04K3L , TK12D60U , TK13H90A1 , TK150F04K3L , TK15D60U , TK15H50C , BF982 , TK16H60C , TK17A25D , TK19H50C , TK20A20D , TK20A60T , TK20D60T , TK20D60U , TK20H50C .

Keywords