TPC8036-H MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: TPC8036-H

Type of TPC8036-H transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 1.9

Maximum drain-source voltage |Uds|, V: 30V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 18

Maximum junction temperature (Tj), °C:

Rise Time of TPC8036-H transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm:

Package: SOP8(5.5_x_6.0)

Equivalent transistors for TPC8036-H

TPC8036-H PDF documents for downloads:

5.1. tpc8046-h_en_datasheet_090617.pdf Size:208K _toshiba2

TPC8046-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?-H) TPC8046-H Switching Regulator Applications Motor Drive Applications Unit: mm DC-DC Converter Applications • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 15 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 3.8 m? (typ.) • High forward transfer admittance: |Yfs| = 62 S (typ.) • Low leakage current: IDSS = 10 ?A (max) (VDS = 40 V) • Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 40 V Drain-gate voltage (RGS = 20 k?) VDGR 40 V Gate-source voltage VGSS ±20 V JEDEC ? DC (Note 1) ID 18 Drain current A JEITA ? Pulsed (Note 1) IDP 72 Drain power dissipation (t = 10 s) TOSHIBA 2-6J1B PD 1.9 W (Note 2a) Weight: 0.085g (typ.) Drain power dissipation (t = 10 s) PD 1.0 W (Note 2b) Single-pulse avalanc

5.2. tpc8045-h_en_datasheet_090617.pdf Size:208K _toshiba2

TPC8045-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?-H) TPC8045-H Switching Regulator Applications Motor Drive Applications Unit: mm DC-DC Converter Applications • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 23 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 2.7 m? (typ.) • High forward transfer admittance: |Yfs| = 67 S (typ.) • Low leakage current: IDSS = 10 ?A (max) (VDS = 40 V) • Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 40 V Drain-gate voltage (RGS = 20 k?) VDGR 40 V Gate-source voltage VGSS ±20 V JEDEC ? DC (Note 1) ID 18 Drain current A JEITA ? Pulsed (Note 1) IDP 72 Drain power dissipation (t = 10 s) TOSHIBA 2-6J1B PD 1.9 W (Note 2a) Weight: 0.085g (typ.) Drain power dissipation (t = 10 s) PD 1.0 W (Note 2b) Single-pulse avalanch

5.3. tpc8086_en_datasheet_100716.pdf Size:227K _toshiba2

TPC8086 MOSFETs Silicon N-Channel MOS (U-MOS?) TPC8086 TPC8086 TPC8086 TPC8086 1. Applications 1. Applications 1. Applications 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches • Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 5.0 m? (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unl

5.4. tpc8073_en_datasheet_100722.pdf Size:227K _toshiba2

TPC8073 MOSFETs Silicon N-Channel MOS (U-MOS?) TPC8073 TPC8073 TPC8073 TPC8073 1. Applications 1. Applications 1. Applications 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches • Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.8 m? (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unl

5.5. tpc8042.pdf Size:200K _toshiba2

TPC8042 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8042 Lithium-Ion Battery Applications Unit: mm Portable Equipment Applications Notebook PC Applications • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON) = 2.7 m? (typ.) • High forward transfer admittance: |Yfs| = 42 S (typ.) • Low leakage current: IDSS = 10 ?A (max) (VDS = 30 V) • Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 k?) VDGR 30 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 18 JEDEC ? Drain current A Pulse (Note 1) IDP 72 JEITA ? Drain power dissipation (t = 10 s) PD 1.9 W TOSHIBA 2-6J1B (Note 2a) Weight: 0.08 g (typ.) Drain power dissipation (t = 10 s) PD 1.0 W (Note 2b) Single pulse avalanche energy EAS 84 mJ (Note 3) Circuit Configuration Avalanche cur

5.6. tpc8049-h_en_datasheet_090618.pdf Size:208K _toshiba2

TPC8049-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?-H) TPC8049-H Switching Regulator Applications Motor Drive Applications Unit: mm DC-DC Converter Applications • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 13 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 6.9 m? (typ.) • High forward transfer admittance: |Yfs| = 48 S (typ.) • Low leakage current: IDSS = 10 ?A (max) (VDS = 60 V) • Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 60 V Drain-gate voltage (RGS = 20 k?) VDGR 60 V Gate-source voltage VGSS ±20 V JEDEC ? DC (Note 1) ID 13 Drain current A JEITA ? Pulsed (Note 1) IDP 52 Drain power dissipation (t = 10 s) TOSHIBA 2-6J1B PD 1.9 W (Note 2a) Weight: 0.085g (typ.) Drain power dissipation (t = 10 s) PD 1.0 W (Note 2b) Single-pulse avalanc

5.7. tpc8080_en_datasheet_100727.pdf Size:222K _toshiba2

TPC8080 MOSFETs Silicon N-Channel MOS (U-MOS?) TPC8080 TPC8080 TPC8080 TPC8080 1. Applications 1. Applications 1. Applications 1. Applications • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 2.2 m? (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) Characteristics Sym

5.8. tpc8041.pdf Size:194K _toshiba2

TPC8041 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8041 Lithium Ion Battery Applications Unit: mm Portable Equipment Applications Notebook PC Applications • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 5.5 m? (typ.) • High forward transfer admittance: |Yfs| = 26 S (typ.) • Low leakage current: IDSS = 10 ?A (max) (VDS = 30 V) • Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 k?) VDGR 30 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 13 JEDEC ? Drain current A Pulse (Note 1) IDP 52 JEITA ? Drain power dissipation (t = 10 s) PD 1.9 W TOSHIBA 2-6J1B (Note 2a) Weight: 0.08 g (typ.) Drain power dissipation (t = 10 s) PD 1.0 W (Note 2b) Single pulse avalanche energy EAS 44 mJ (Note 3) Circuit Configuration Avalanche cur

5.9. tpc8085_en_datasheet_100716.pdf Size:221K _toshiba2

TPC8085 MOSFETs Silicon N-Channel MOS (U-MOS?) TPC8085 TPC8085 TPC8085 TPC8085 1. Applications 1. Applications 1. Applications 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches • Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.8 m? (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unl

5.10. tpc8014.pdf Size:241K _toshiba2

TPC8014 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPC8014 Lithium Ion Battery Applications Unit: mm Portable Equipment Applications Notebook PC Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 11 m? (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.) • Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 k?) VDGR 30 V JEDEC ? Gate-source voltage VGSS ±20 V JEITA ? DC (Note 1) ID 11 Drain current A TOSHIBA 2-6J1B Pulse (Note 1) IDP 44 Weight: 0.08 g (typ.) Drain power dissipation (t = 10 s) PD 1.9 W (Note 2a) Drain power dissipation (t = 10 s) PD 1.0 W (Note 2b) Circuit Configuration Single pulse avalanche energy EAS 157 mJ 8 7 6 5 (Note 3) Av

5.11. tpc8078_en_datasheet_110310.pdf Size:235K _toshiba2

TPC8078 MOSFETs Silicon N-Channel MOS (U-MOS?) TPC8078 TPC8078 TPC8078 TPC8078 1. Applications 1. Applications 1. Applications 1. Applications • Lithium-Ion Secondary Batteries • Notebook PCs • Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 1.9 m? (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 33 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless othe

5.12. tpc8056-h_en_datasheet_100714.pdf Size:223K _toshiba2

TPC8056-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPC8056-H TPC8056-H TPC8056-H TPC8056-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate change: QSW = 17 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.4 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unle

5.13. tpc8051-h_en_datasheet_090619.pdf Size:206K _toshiba2

TPC8051-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?-H) TPC8051-H Switching Regulator Applications Motor Drive Applications Unit: mm DC-DC Converter Applications • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 16 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 6.3 m? (typ.) • High forward transfer admittance: |Yfs| = 45 S (typ.) • Low leakage current: IDSS = 10 ?A (max) (VDS = 80 V) • Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 80 V Drain-gate voltage (RGS = 20 k?) VDGR 80 V Gate-source voltage VGSS ±20 V JEDEC ? DC (Note 1) ID 13 Drain current A JEITA ? Pulsed (Note 1) IDP 52 Drain power dissipation (t = 10 s) TOSHIBA 2-6J1B PD 1.9 W (Note 2a) Weight: 0.085g (typ.) Drain power dissipation (t = 10 s) PD 1.0 W (Note 2b) Single-pulse avalanc

5.14. tpc8059-h_en_datasheet_100803.pdf Size:226K _toshiba2

TPC8059-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPC8059-H TPC8059-H TPC8059-H TPC8059-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate change: QSW = 9.1 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 4.0 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unl

5.15. tpc8084_en_datasheet_110310.pdf Size:238K _toshiba2

TPC8084 MOSFETs Silicon N-Channel MOS (U-MOS?) TPC8084 TPC8084 TPC8084 TPC8084 1. Applications 1. Applications 1. Applications 1. Applications • Lithium-Ion Secondary Batteries • Notebook PCs • Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 5.4 m? (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 33 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless othe

5.16. tpc8048-h_en_datasheet_090618.pdf Size:206K _toshiba2

TPC8048-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?-H) TPC8048-H Switching Regulator Applications Motor Drive Applications Unit: mm DC-DC Converter Applications • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 17 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 4.6 m? (typ.) • High forward transfer admittance: |Yfs| = 60 S (typ.) • Low leakage current: IDSS = 10 ?A (max) (VDS = 60 V) • Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 60 V Drain-gate voltage (RGS = 20 k?) VDGR 60 V Gate-source voltage VGSS ±20 V JEDEC ? DC (Note 1) ID 16 Drain current A JEITA ? Pulsed (Note 1) IDP 64 Drain power dissipation (t = 10 s) TOSHIBA 2-6J1B PD 1.9 W (Note 2a) Weight: 0.085g (typ.) Drain power dissipation (t = 10 s) PD 1.0 W (Note 2b) Single-pulse avalanc

5.17. tpc8067-h_en_datasheet_101022.pdf Size:250K _toshiba2

TPC8067-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPC8067-H TPC8067-H TPC8067-H TPC8067-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 1.9 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 26 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 2010-10-22 1 Rev.2.0 TPC8067-H 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta =

5.18. tpc8065-h_en_datasheet_110406.pdf Size:257K _toshiba2

TPC8065-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPC8065-H TPC8065-H TPC8065-H TPC8065-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 4.3 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 11.9 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 2011-04-06 1 Rev.2.0 TPC8065-H 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta

5.19. tpc8050-h_en_datasheet_090630.pdf Size:207K _toshiba2

TPC8050-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?-H) TPC8050-H Switching Regulator Applications Motor Drive Applications Unit: mm DC-DC Converter Applications • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 9.2 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 9.3 m? (typ.) • High forward transfer admittance: |Yfs| = 40 S (typ.) • Low leakage current: IDSS = 10 ?A (max) (VDS = 60 V) • Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 60 V Drain-gate voltage (RGS = 20 k?) VDGR 60 V Gate-source voltage VGSS ±20 V JEDEC ? DC (Note 1) ID 11 Drain current A JEITA ? Pulsed (Note 1) IDP 44 Drain power dissipation (t = 10 s) TOSHIBA 2-6J1B PD 1.9 W (Note 2a) Weight: 0.085g (typ.) Drain power dissipation (t = 10 s) PD 1.0 W (Note 2b) Single-pulse avalan

5.20. tpc8082_en_datasheet_100730.pdf Size:224K _toshiba2

TPC8082 MOSFETs Silicon N-Channel MOS (U-MOS?) TPC8082 TPC8082 TPC8082 TPC8082 1. Applications 1. Applications 1. Applications 1. Applications • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.1 m? (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) Characteristics Sym

5.21. tpc8057-h_en_datasheet_100721.pdf Size:225K _toshiba2

TPC8057-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPC8057-H TPC8057-H TPC8057-H TPC8057-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate change: QSW = 14 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.8 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unle

5.22. tpc8064-h_en_datasheet_101019.pdf Size:229K _toshiba2

TPC8064-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPC8064-H TPC8064-H TPC8064-H TPC8064-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 5.0 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 8.1 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4.

5.23. tpc8092_en_datasheet_101129.pdf Size:246K _toshiba2

TPC8092 MOSFETs Silicon N-Channel MOS (U-MOS?) TPC8092 TPC8092 TPC8092 TPC8092 1. Applications 1. Applications 1. Applications 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches • Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 7.6 m? (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unl

5.24. tpc8087_en_datasheet_100726.pdf Size:220K _toshiba2

TPC8087 MOSFETs Silicon N-Channel MOS (U-MOS?) TPC8087 TPC8087 TPC8087 TPC8087 1. Applications 1. Applications 1. Applications 1. Applications • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 1.7 m? (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) Characteristics Sym

5.25. tpc8075_en_datasheet_110310.pdf Size:234K _toshiba2

TPC8075 MOSFETs Silicon N-Channel MOS (U-MOS?) TPC8075 TPC8075 TPC8075 TPC8075 1. Applications 1. Applications 1. Applications 1. Applications • Lithium-Ion Secondary Batteries • Notebook PCs • Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 2.1 m? (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 33 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless othe

5.26. tpc8076_en_datasheet_110401.pdf Size:235K _toshiba2

TPC8076 MOSFETs Silicon N-Channel MOS (U-MOS?) TPC8076 TPC8076 TPC8076 TPC8076 1. Applications 1. Applications 1. Applications 1. Applications • Lithium-Ion Secondary Batteries • Notebook PCs • Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.9 m? (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 33 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless othe

5.27. tpc8055-h_en_datasheet_100722.pdf Size:222K _toshiba2

TPC8055-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPC8055-H TPC8055-H TPC8055-H TPC8055-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate change: QSW = 21 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.1 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unle

5.28. tpc8058-h_en_datasheet_100729.pdf Size:224K _toshiba2

TPC8058-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPC8058-H TPC8058-H TPC8058-H TPC8058-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate change: QSW = 12 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.2 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unle

5.29. tpc8062-h_en_datasheet_100610.pdf Size:223K _toshiba2

TPC8062-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPC8062-H TPC8062-H TPC8062-H TPC8062-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate change: QSW = 7.4 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 5.6 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unl

5.30. tpc8053-h.pdf Size:200K _toshiba2

TPC8053-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?-H) TPC8053-H Switching Regulator Applications Motor Drive Applications Unit: mm DC-DC Converter Applications • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 6.7 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 14.1 m? (typ.) • High forward transfer admittance: |Yfs| = 30 S (typ.) • Low leakage current: IDSS = 10 ?A (max) (VDS = 60 V) • Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 60 V Drain-gate voltage (RGS = 20 k?) VDGR 60 V Gate-source voltage VGSS ±20 V JEDEC ? DC (Note 1) ID 9 Drain current A JEITA ? Pulsed (Note 1) IDP 36 Drain power dissipation (t = 10 s) TOSHIBA 2-6J1B PD 1.9 W (Note 2a) Weight: 0.085g (typ.) Drain power dissipation (t = 10 s) PD 1.0 W (Note 2b) Single-pulse avalanc

5.31. tpc8074_en_datasheet_100708.pdf Size:223K _toshiba2

TPC8074 MOSFETs Silicon N-Channel MOS (U-MOS?) TPC8074 TPC8074 TPC8074 TPC8074 1. Applications 1. Applications 1. Applications 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches • Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 5.1 m? (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unl

5.32. tpc8081_en_datasheet_100729.pdf Size:222K _toshiba2

TPC8081 MOSFETs Silicon N-Channel MOS (U-MOS?) TPC8081 TPC8081 TPC8081 TPC8081 1. Applications 1. Applications 1. Applications 1. Applications • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 2.5 m? (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) Characteristics Sym

5.33. tpc8052-h.pdf Size:212K _toshiba2

TPC8052-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?-H) TPC8052-H Switching Regulator Applications Motor Drive Applications Unit: mm DC-DC Converter Applications • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 6.6 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 7.4 m? (typ.) • High forward transfer admittance: |Yfs| = 40 S (typ.) • Low leakage current: IDSS = 10 ?A (max) (VDS = 40 V) • Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 40 V Drain-gate voltage (RGS = 20 k?) VDGR 40 V Gate-source voltage VGSS ±20 V JEDEC ? DC (Note 1) ID 12 Drain current A JEITA ? Pulsed (Note 1) IDP 48 Drain power dissipation (t = 10 s) TOSHIBA 2-6J1B PD 1.9 W (Note 2a) Weight: 0.085g (typ.) Drain power dissipation (t = 10 s) PD 1.0 W (Note 2b) Single-pulse avalan

5.34. tpc8088_en_datasheet_100714.pdf Size:220K _toshiba2

TPC8088 MOSFETs Silicon N-Channel MOS (U-MOS?) TPC8088 TPC8088 TPC8088 TPC8088 1. Applications 1. Applications 1. Applications 1. Applications • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 1.9 m? (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) Characteristics Sym

5.35. tpc8063-h_en_datasheet_100610.pdf Size:222K _toshiba2

TPC8063-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPC8063-H TPC8063-H TPC8063-H TPC8063-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate change: QSW = 5.9 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 6.7 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unl

5.36. tpc8066-h_en_datasheet_101101.pdf Size:247K _toshiba2

TPC8066-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPC8066-H TPC8066-H TPC8066-H TPC8066-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 3.2 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 15 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 2010-11-01 1 Rev.1.0 TPC8066-H 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta =

5.37. tpc8047-h_en_datasheet_090617.pdf Size:208K _toshiba2

TPC8047-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?-H) TPC8047-H Switching Regulator Applications Motor Drive Applications Unit: mm DC-DC Converter Applications • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 11 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 5.1 m? (typ.) • High forward transfer admittance: |Yfs| = 62 S (typ.) • Low leakage current: IDSS = 10 ?A (max) (VDS = 40 V) • Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 40 V Drain-gate voltage (RGS = 20 k?) VDGR 40 V Gate-source voltage VGSS ±20 V JEDEC ? DC (Note 1) ID 16 Drain current A JEITA ? Pulsed (Note 1) IDP 64 Drain power dissipation (t = 10 s) TOSHIBA 2-6J1B PD 1.9 W (Note 2a) Weight: 0.085g (typ.) Drain power dissipation (t = 10 s) PD 1.0 W (Note 2b) Single-pulse avalanc

See also transistors datasheet: TPC8025 , TPC8026 , TPC8030 , TPC8031-H , TPC8032-H , TPC8033-H , TPC8034-H , TPC8035-H , BUZ11 , TPC8037-H , TPC8038-H , TPC8039-H , TPC8040-H , TPC8054-H , TPC8060-H , TPC8104-H , TPC8105-H .

Keywords