TPC8104-H MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: TPC8104-H

Type of TPC8104-H transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 2.4

Maximum drain-source voltage |Uds|, V: 30V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 5

Maximum junction temperature (Tj), °C:

Rise Time of TPC8104-H transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm:

Package: SOP8(5.5_x_6.0)

Equivalent transistors for TPC8104-H

TPC8104-H PDF documents for downloads:

5.1. tpc8124_en_datasheet_091116.pdf Size:257K _toshiba2

TPC8124 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS?) TPC8124 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 6.1 m? (typ.) • Low leakage current: IDSS = -10 ?A (max) (VDS = -40 V) • Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.5mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -40 V Drain-gate voltage (RGS = 20 k?) VDGR -40 V Gate-source voltage VGSS -25/+20 V DC (Note 1) ID -12 Drain current A Pulse (Note 1) IDP -48 Drain power dissipation (t = 10 s) JEDEC ? PD 1.9 W (Note 2a) JEITA ? Drain power dissipation (t = 10 s) PD 1.0 W (Note 2b) TOSHIBA 2-6J1B Single pulse avalanche energy EAS 134 mJ Weight: 0.080 g (typ.) (Note 3) Avalanche current (Note 1) IAR -12 A Circuit Configuration Channel temperature Tch 150 °C Storage t

5.2. tpc8128_en_datasheet_091120.pdf Size:216K _toshiba2

TPC8128 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS?) TPC8128 Lithium Ion Battery Applications Unit: mm Power Management Switch Applications • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 3.9 m? (typ.) • Low leakage current: IDSS = -10 ?A (max) (VDS = -30 V) • Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.5mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -30 V Drain-gate voltage (RGS = 20 k?) VDGR -30 V Gate-source voltage VGSS -25/+20 V DC (Note 1) ID -16 Drain current A Pulse (Note 1) IDP -64 Drain power dissipation (t = 10 s) PD 1.9 W (Note 2a) JEDEC ? Drain power dissipation (t = 10 s) PD 1.0 W JEITA ? (Note 2b) Single pulse avalanche energy TOSHIBA 2-6J1B EAS 166 mJ (Note 3) Weight: 0.080 g (typ.) Avalanche current (Note 1) IAR -16 A Channel temperature Tch 150 °C Circuit Configuration Storage t

5.3. tpc8123_en_datasheet_090727.pdf Size:272K _toshiba2

TPC8123 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS?) TPC8123 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 7.0 m? (typ.) • High forward transfer admittance: |Yfs| = 36 S (typ.) • Low leakage current: IDSS = -10 ?A (max) (VDS = -30 V) • Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.5 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -30 V Drain-gate voltage (RGS = 20 k?) VDGR -30 V Gate-source voltage VGSS -25/+20 V DC (Note 1) ID -11 Drain current A Pulse (Note 1) IDP -44 JEDEC ? Drain power dissipation (t = 10 s) PD 1.9 W JEITA ? (Note 2a) TOSHIBA 2-6J1B Drain power dissipation (t = 10 s) PD 1.0 W (Note 2b) Weight: 0.080 g (typ.) Single pulse avalanche energy EAS 79 mJ (Note 3) Circuit Configuration Avalanche current (No

5.4. tpc8126_en_datasheet_091119.pdf Size:216K _toshiba2

TPC8126 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS?) TPC8126 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 7.5 m? (typ.) • Low leakage current: IDSS = -10 ?A (max) (VDS = -30 V) • Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.5mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -30 V Drain-gate voltage (RGS = 20 k?) VDGR -30 V Gate-source voltage VGSS -25/+20 V DC (Note 1) ID -11 Drain current A Pulse (Note 1) IDP -44 Drain power dissipation (t = 10 s) PD 1.9 W (Note 2a) JEDEC ? Drain power dissipation (t = 10 s) PD 1.0 W JEITA ? (Note 2b) Single pulse avalanche energy TOSHIBA 2-6J1B EAS 79 mJ (Note 3) Weight: 0.080 g (typ.) Avalanche current (Note 1) IAR -11 A Channel temperature Tch 150 °C Circuit Configuration Storage te

5.5. tpc8112.pdf Size:274K _toshiba2

TPC8112 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS?) TPC8112 Lithium Ion Battery Applications Unit: mm Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 5.0m? (typ.) • High forward transfer admittance: |Yfs| = 31 S (typ.) • Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) • Enhancement-mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit JEDEC ? Drain-source voltage VDSS -30 V JEITA ? Drain-gate voltage (RGS = 20 k?) VDGR -30 V TOSHIBA 2-6J1B Gate-source voltage VGSS ±20 V DC (Note 1) ID -13 Weight: 0.080 g (typ.) Drain current A Pulse (Note 1) IDP -52 Drain power dissipation (t = 10 s) PD 1.9 W (Note 2a) Circuit Configuration Drain power dissipation (t = 10 s) PD 1.0 W (Note 2b) 8 7 6 5 Single pulse avalanche energy EAS 219 mJ (Note

5.6. tpc8127_en_datasheet_091120.pdf Size:215K _toshiba2

TPC8127 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS?) TPC8127 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 5 m? (typ.) • Low leakage current: IDSS = -10 ?A (max) (VDS = -30 V) • Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.5mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -30 V Drain-gate voltage (RGS = 20 k?) VDGR -30 V Gate-source voltage VGSS -25/+20 V DC (Note 1) ID -13 Drain current A Pulse (Note 1) IDP -52 Drain power dissipation (t = 10 s) PD 1.9 W (Note 2a) JEDEC ? Drain power dissipation (t = 10 s) PD 1.0 W JEITA ? (Note 2b) Single pulse avalanche energy TOSHIBA 2-6J1B EAS 110 mJ (Note 3) Weight: 0.080 g (typ.) Avalanche current (Note 1) IAR -13 A Channel temperature Tch 150 °C Circuit Configuration Storage tem

5.7. tpc8129_en_datasheet_100825.pdf Size:260K _toshiba2

TPC8129 MOSFETs Silicon P-Channel MOS (U-MOS?) TPC8129 TPC8129 TPC8129 TPC8129 1. Applications 1. Applications 1. Applications 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 17 m? (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) (4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.2 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherw

5.8. tpc8132_en_datasheet_101204.pdf Size:260K _toshiba2

TPC8132 MOSFETs Silicon P-Channel MOS (U-MOS?) TPC8132 TPC8132 TPC8132 TPC8132 1. Applications 1. Applications 1. Applications 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to small and thin package (2) Low drain-source on-resistance: RDS(ON) = 20 m? (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.2 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwis

5.9. tpc8134_en_datasheet_101204.pdf Size:264K _toshiba2

TPC8134 MOSFETs Silicon P-Channel MOS (U-MOS?) TPC8134 TPC8134 TPC8134 TPC8134 1. Applications 1. Applications 1. Applications 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to small and thin package (2) Low drain-source on-resistance: RDS(ON) = 39 m? (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwis

5.10. tpc8125_en_datasheet_091117.pdf Size:221K _toshiba2

TPC8125 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS?) TPC8125 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 10 m? (typ.) • Low leakage current: IDSS = -10 ?A (max) (VDS = -30 V) • Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.5mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -30 V Drain-gate voltage (RGS = 20 k?) VDGR -30 V Gate-source voltage VGSS -25/+20 V DC (Note 1) ID -10 Drain current A Pulse (Note 1) IDP -40 1,2,3:SOURCE 4:GATE Drain power dissipation (t = 10 s) 5,6,7,8:DRAIN PD 1.9 W (Note 2a) Drain power dissipation (t = 10 s) PD 1.0 W JEDEC ? (Note 2b) Single pulse avalanche energy JEITA ? EAS 65 mJ (Note 3) TOSHIBA 2-5R1A Avalanche current (Note 1) IAR -10 A Weight: 0.085 g (typ.) Channel temperature Tch 150 °C

5.11. tpc8114.pdf Size:278K _toshiba2

TPC8114 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS?) TPC8114 Lithium Ion Battery Applications Unit: mm Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 3.1 m? (typ.) • High forward transfer admittance: |Yfs| = 47 S (typ.) • Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) • Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit JEDEC ? Drain-source voltage VDSS -30 V JEITA ? Drain-gate voltage (RGS = 20 k?) VDGR -30 V TOSHIBA 2-6J1B Gate-source voltage VGSS ±20 V DC (Note 1) ID -18 Weight: 0.080 g (typ.) Drain current A Pulse (Note 1) IDP -72 Drain power dissipation (t = 10 s) PD 1.9 W (Note 2a) Circuit Configuration Drain power dissipation (t = 10 s) PD 1.0 W (Note 2b) 8 7 6 5 Single pulse avalanche energy EAS 211 mJ (Not

5.12. tpc8133_en_datasheet_101206.pdf Size:256K _toshiba2

TPC8133 MOSFETs Silicon P-Channel MOS (U-MOS?) TPC8133 TPC8133 TPC8133 TPC8133 1. Applications 1. Applications 1. Applications 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to small and thin package (2) Low drain-source on-resistance: RDS(ON) = 11 m? (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.5 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwis

5.13. tpc8120_en_datasheet_090727.pdf Size:289K _toshiba2

TPC8120 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS?) TPC8120 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 2.6 m? (typ.) • High forward transfer admittance: |Yfs| =80 S (typ.) • Low leakage current: IDSS = -10 ?A (max) (VDS = -30 V) • Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -30 V Drain-gate voltage (RGS = 20 k?) VDGR -30 V Gate-source voltage VGSS -25/+20 V DC (Note 1) ID -18 Drain current A Pulse (Note 1) IDP -72 Drain power dissipation (t = 10 s) PD 1.9 W (Note 2a) Drain power dissipation (t = 10 s) JEDEC ? PD 1.0 W (Note 2b) JEITA ? Single pulse avalanche energy EAS 211 mJ (Note 3) TOSHIBA 2-6J1B Avalanche current IAR -18 A Weight: 0.080 g (typ.) Repetitive avalanc

See also transistors datasheet: TPC8035-H , TPC8036-H , TPC8037-H , TPC8038-H , TPC8039-H , TPC8040-H , TPC8054-H , TPC8060-H , IRF1404 , TPC8105-H , TPC8107 , TPC8108 , TPC8109 , TPC8110 , TPC8111 , TPC8112 , TPC8113 .

Keywords