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BUK78150-55 MOSFET. Datasheet pdf. Equivalent

Type Designator: BUK78150-55

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.8 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.15 Ohm

Package: SOT223

BUK78150-55 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUK78150-55 PDF doc:

1.1. buk78150-55_1.pdf Size:54K _philips

BUK78150-55
BUK78150-55

Philips Semiconductors Product specification TrenchMOS? transistor BUK78150-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using ’trench’ technology ID Drain current 5.5 A the device features ver

5.1. buk7880-55_2.pdf Size:53K _philips

BUK78150-55
BUK78150-55

Philips Semiconductors Product specification TrenchMOS? transistor BUK7880-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using ’trench’ technolgy ID Drain current 7.5 A the device features very

5.2. buk7830-30_1.pdf Size:58K _philips

BUK78150-55
BUK78150-55

Philips Semiconductors Product specification TrenchMOS? transistor BUK7830-30 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting. Using ID Drain current (DC) Tsp = 25 ?C 12.8 A ’trench’ technology, th

5.3. buk7880-55a.pdf Size:98K _philips

BUK78150-55
BUK78150-55

BUK7880-55A N-channel TrenchMOS standard level FET Rev. 01 — 1 November 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 150 °C rated Standard level compatible 1.3

5.4. buk7840-55_1.pdf Size:55K _philips

BUK78150-55
BUK78150-55

Philips Semiconductors Product specification TrenchMOS? transistor BUK7840-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using ’trench’ technology ID Drain current 10.7 A the device features ver

Datasheet: BUK7614-30 , BUK7618-30 , BUK7618-55 , BUK7620-55 , BUK7624-55 , BUK7628-55 , BUK7635-55 , BUK7675-55 , IRFP250N , BUK7830-30 , BUK7840-55 , BUK7880-55 , BUK9120-48TC , BUK9506-30 , BUK9508-55 , BUK9510-30 , BUK9514-30 .

 


BUK78150-55
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  BUK78150-55
 
BUK78150-55
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  BUK78150-55
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