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TPC8214-H MOSFET (IC) Datasheet. Cross Reference Search. TPC8214-H Equivalent

Type Designator: TPC8214-H

Type of TPC8214-H transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 1.5

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 2.2

Maximum junction temperature (Tj), °C: 150

Rise Time of TPC8214-H transistor (tr), nS: 7

Drain-source Capacitance (Cd), pF: 75

Maximum drain-source on-state resistance (Rds), Ohm: 0.18

Package: SOP8

TPC8214-H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

TPC8214-H PDF doc:

1.1. tpc8214-h.pdf Size:222K _toshiba2

TPC8214-H
TPC8214-H

TPC8214-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8214-H High-Efficiency DC/DC Converter Applications Unit: mm CCFL Inverters • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 2.0 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 130 mΩ (typ.) • High forward

4.1. tpc8218-h.pdf Size:218K _toshiba2

TPC8214-H
TPC8214-H

TPC8218-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPC8218-H DC-DC Converter Applications Unit: mm CCFL Inverters • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 2.6 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 12 S (

4.2. tpc8213-h.pdf Size:213K _toshiba2

TPC8214-H
TPC8214-H

TPC8213-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8213-H High-Efficiency DC/DC Converter Applications Unit: mm Notebook PC Applications Portable-Equipment Applications • Small footprint due to small and thin package • High-speed switching • Small gate charge: QSW = 2.9 nC (typ.) • Low drain-source ON-resistance: RDS

4.3. tpc8210.pdf Size:222K _toshiba2

TPC8214-H
TPC8214-H

TPC8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPC8210 Lithium Ion Battery Applications Unit: mm Portable Equipment Applications Notebook PC Applications Low drain-source ON resistance: RDS (ON) = 11 mΩ (typ.) High forward transfer admittance: |Y | = 13 S (typ.) fs Low leakage current: I = 10 µA (max) (V = 30 V) DSS DS Enhancement

4.4. tpc8212-h.pdf Size:468K _toshiba2

TPC8214-H
TPC8214-H

TPC8212-H www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8212-H High-Efficiency DC/DC Converter Applications Unit: mm Notebook PC Applications Portable-Equipment Applications • Small footprint due to small and thin package • High-speed switching • Small gate charge: QSW = 5.5 nC (typ.) • Low drain-source O

4.5. tpc8211.pdf Size:159K _toshiba2

TPC8214-H
TPC8214-H

TPC8211 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPC8211 Lithium Ion Battery Applications Unit: mm Portable Equipment Applications Notebook PC Applications Low drain-source ON resistance: RDS (ON) = 25 mΩ (typ.) High forward transfer admittance: |Y | = 7.0 S (typ.) fs Low leakage current: I = 10 µA (max) (V = 30 V) DSS DS Enhancemen

4.6. tpc8216-h.pdf Size:234K _toshiba2

TPC8214-H
TPC8214-H

TPC8216-H www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPC8216-H High Efficiency DC-DC Converter Applications Unit: mm Notebook PC Applications Portable-Equipment Applications • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 3.4 nC (typ.) • Low drain-source ON-resistance

See also transistors datasheet: TPC8206 , TPC8207 , TPC8208 , TPC8209 , TPC8210 , TPC8211 , TPC8212-H , TPC8213-H , IRF250 , TPC8216-H , TPC8218-H , TPC8301 , TPC8302 , TPC8303 , TPC8401 , TPC8404 , TPC8405 .

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