TPCA8027-H MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: TPCA8027-H

Type of TPCA8027-H transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 45

Maximum drain-source voltage |Uds|, V: 40V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 30

Maximum junction temperature (Tj), °C:

Rise Time of TPCA8027-H transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm:

Package: SOP_Advance_(5.0_x_6.0)

Equivalent transistors for TPCA8027-H

TPCA8027-H PDF documents for downloads:

4.1. tpca8063-h_en_datasheet_110413.pdf Size:234K _toshiba2

TPCA8063-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPCA8063-H TPCA8063-H TPCA8063-H TPCA8063-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 5.9 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 6.5 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 2011-04-13 1 Rev.2.0 TPCA8063-H 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings

4.2. tpca8062-h_en_datasheet_100603.pdf Size:233K _toshiba2

TPCA8062-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPCA8062-H TPCA8062-H TPCA8062-H TPCA8062-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate change: QSW = 7.4 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 5.4 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 2010-06-03 1 Rev.1.0 TPCA8062-H 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified)

4.3. tpca8008-h_en_datasheet_071218.pdf Size:179K _toshiba2

TPCA8008-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH??-MOS?) TPCA8008-H High Speed Switching Applications Unit: mm Switching Regulator Applications 0.4±0.1 1.27 0.05 M A DC/DC Converter Applications 8 5 0.15±0.05 • Small footprint due to a small and thin package • High-speed switching 4 1 0.595 • Small gate charge: QSW = 3.7 nC (typ.) A • Low drain-source ON-resistance: RDS (ON) = 0.47? (typ.) 5.0±0.2 • High forward transfer admittance: |Yfs| = 3.3S (typ.) • Low leakage current: IDSS = 100 ?A (max) (VDS = 250 V) 0.05 S • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) S 1 4 Absolute Maximum Ratings (Ta = 25°C) 4.25±0.2 Characteristic Symbol Rating Unit 8 5 0.8±0.1 Drain-source voltage VDSS 250 V 1, 2, 3 : SOURCE 4 : GATE Drain-gate voltage (RGS = 20 k?) VDGR 250 V 5, 6, 7, 8 : DRAIN Gate-source voltage VGSS ±20 V JEDEC ? DC (Note 1) ID 4 Drain current A JEITA ? Pulsed (Note 1) IDP 8 Drain

4.4. tpca8056-h_en_datasheet_100618.pdf Size:229K _toshiba2

TPCA8056-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPCA8056-H TPCA8056-H TPCA8056-H TPCA8056-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate change: QSW = 17 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.2 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 2010-06-18 1 Rev.1.0 TPCA8056-H 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4

4.5. tpca8080_en_datasheet_100624.pdf Size:259K _toshiba2

TPCA8080 MOSFETs Silicon N-Channel MOS (U-MOS?) TPCA8080 TPCA8080 TPCA8080 TPCA8080 1. Applications 1. Applications 1. Applications 1. Applications • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 2.0 m? (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) Characte

4.6. tpca8046-h_en_datasheet_090529.pdf Size:193K _toshiba2

TPCA8046-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?-H) TPCA8046-H Switching Regulator Applications Unit: mm Motor Drive Applications 1.27 0.4 ± 0.1 8 0.05 M A DC-DC Converter Applications 5 0.15 ± 0.05 • Small footprint due to a small and thin package • High-speed switching 4 0.595 • Small gate charge: QSW = 15 nC (typ.) 1 A • Low drain-source ON-resistance: RDS (ON) = 3.5 m? (typ.) • High forward transfer admittance: |Yfs| = 112 S (typ.) 5.0 ± 0.2 • Low leakage current: IDSS = 10 ?A (max) (VDS = 40 V) • Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 0.05 S S 4 1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit 4.25 ± 0.2 Drain-source voltage VDSS 40 V Drain-gate voltage (RGS = 20 k?) VDGR 40 V 8 5 Gate-source voltage VGSS ±20 V DC (Note 1) ID 38 1,2,3:SOURCE 4:GATE Drain current A 5,6,7,8:DRAIN Pulsed (Note 1) IDP 114 JEDEC ? Drain power dissipation (Tc =

4.7. tpca8010-h_en_datasheet_091221.pdf Size:215K _toshiba2

TPCA8010-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH??-MOS?) TPCA8010-H High-Speed Switching Applications Unit: mm Switching Regulator Applications 0.4±0.1 1.27 0.05 M A DC-DC Converter Applications 8 5 0.15±0.05 • Small footprint due to a small and thin package • High-speed switching 4 1 0.595 • Small gate charge: QSW = 3.7 nC (typ.) A • Low drain-source ON-resistance: RDS (ON) = 0.38? (typ.) 5.0±0.2 • High forward transfer admittance: |Yfs| = 3.9S (typ.) • Low leakage current: IDSS = 100 ?A (max) (VDS = 200V) 0.05 S • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) S 1 4 Absolute Maximum Ratings (Ta = 25°C) 4.25±0.2 Characteristic Symbol Rating Unit 8 5 0.8±0.1 Drain-source voltage VDSS 200 V 1, 2, 3 : SOURCE 4 : GATE Drain-gate voltage (RGS = 20 k?) VDGR 200 V 5, 6, 7, 8 : DRAIN Gate-source voltage VGSS ±20 V JEDEC ? DC (Note 1) ID 5.5 Drain current A JEITA ? Pulsed (Note 1) IDP 11 Dra

4.8. tpca8065-h_en_datasheet_100902.pdf Size:237K _toshiba2

TPCA8065-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPCA8065-H TPCA8065-H TPCA8065-H TPCA8065-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate change: QSW = 4.3 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 11.7 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 2010-09-02 1 Rev.3.0 TPCA8065-H 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified)

4.9. tpca8048-h.pdf Size:196K _toshiba2

TPCA8048-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?-H) TPCA8048-H Switching Regulator Applications Unit: mm Motor Drive Applications 1.27 0.4 ± 0.1 8 0.05 M A DC-DC Converter Applications 5 0.15 ± 0.05 • Small footprint due to a small and thin package • High-speed switching 4 0.595 • Small gate charge: QSW = 19 nC (typ.) 1 A • Low drain-source ON-resistance: RDS (ON) = 4.3 m? (typ.) • High forward transfer admittance: |Yfs| = 118 S (typ.) 5.0 ± 0.2 • Low leakage current: IDSS = 10 ?A (max) (VDS = 60 V) • Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA) 0.05 S S 4 1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit 4.25 ± 0.2 Drain-source voltage VDSS 60 V Drain-gate voltage (RGS = 20 k?) VDGR 60 V 8 5 Gate-source voltage VGSS ±20 V DC (Note 1) ID 35 1,2,3:SOURCE 4:GATE Drain current A 5,6,7,8:DRAIN Pulsed (Note 1) IDP 105 JEDEC ? Drain power dissipation (Tc =

4.10. tpca8055-h_en_datasheet_110421.pdf Size:259K _toshiba2

TPCA8055-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPCA8055-H TPCA8055-H TPCA8055-H TPCA8055-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 21 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 1.9 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 2011-04-21 1 Rev.2.0 TPCA8055-H 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (

4.11. tpca8075_en_datasheet_110802.pdf Size:231K _toshiba2

TPCA8075 MOSFETs Silicon N-Channel MOS (U-MOS?) TPCA8075 TPCA8075 TPCA8075 TPCA8075 1. Applications 1. Applications 1. Applications 1. Applications • Notebook PCs • Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 1.9 m? (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 33 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (T = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) a Char

4.12. tpca8051-h_en_datasheet_090619.pdf Size:191K _toshiba2

TPCA8051-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?-H) TPCA8051-H Switching Regulator Applications Unit: mm Motor Drive Applications 1.27 0.4 ± 0.1 8 0.05 M A DC-DC Converter Applications 5 0.15 ± 0.05 • Small footprint due to a small and thin package • High-speed switching 4 0.595 • Small gate charge: QSW = 18 nC (typ.) 1 A • Low drain-source ON-resistance: RDS (ON) = 6.0 m? (typ.) • High forward transfer admittance: |Yfs| = 96 S (typ.) 5.0 ± 0.2 • Low leakage current: IDSS = 10 ?A (max) (VDS = 80 V) • Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA) 0.05 S S 4 1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit 4.25 ± 0.2 Drain-source voltage VDSS 80 V Drain-gate voltage (RGS = 20 k?) VDGR 80 V 8 5 Gate-source voltage VGSS ±20 V DC (Note 1) ID 28 1,2,3:SOURCE 4:GATE Drain current A 5,6,7,8:DRAIN Pulsed (Note 1) IDP 84 JEDEC ? Drain power dissipation (Tc = 25

4.13. tpca8050-h.pdf Size:185K _toshiba2

TPCA8050-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?-H) TPCA8050-H Switching Regulator Applications Unit: mm Motor Drive Applications 1.27 0.4 ± 0.1 8 0.05 M A DC-DC Converter Applications 5 0.15 ± 0.05 • Small footprint due to a small and thin package • High-speed switching 4 0.595 • Small gate charge: QSW = 10 nC (typ.) 1 A • Low drain-source ON-resistance: RDS (ON) = 9.0 m? (typ.) • High forward transfer admittance: |Yfs| = 70 S (typ.) 5.0 ± 0.2 • Low leakage current: IDSS = 10 ?A (max) (VDS = 60 V) • Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 0.05 S S 4 1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit 4.25 ± 0.2 Drain-source voltage VDSS 60 V Drain-gate voltage (RGS = 20 k?) VDGR 60 V 8 5 Gate-source voltage VGSS ±20 V DC (Note 1) ID 24 1,2,3:SOURCE 4:GATE Drain current A 5,6,7,8:DRAIN Pulsed (Note 1) IDP 72 JEDEC ? Drain power dissipation (Tc = 25?

4.14. tpca8053-h.pdf Size:185K _toshiba2

TPCA8053-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?-H) TPCA8053-H Switching Regulator Applications Unit: mm Motor Drive Applications 1.27 0.4 ± 0.1 8 0.05 M A DC-DC Converter Applications 5 0.15 ± 0.05 • Small footprint due to a small and thin package • High-speed switching 4 0.595 • Small gate charge: QSW = 6.9 nC (typ.) 1 A • Low drain-source ON-resistance: RDS (ON) = 13.9 m? (typ.) • High forward transfer admittance: |Yfs| = 46 S (typ.) 5.0 ± 0.2 • Low leakage current: IDSS = 10 ?A (max) (VDS = 60 V) • Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 0.05 S S 4 1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit 4.25 ± 0.2 Drain-source voltage VDSS 60 V Drain-gate voltage (RGS = 20 k?) VDGR 60 V 8 5 Gate-source voltage VGSS ±20 V DC (Note 1) ID 15 1,2,3:SOURCE 4:GATE Drain current A 5,6,7,8:DRAIN Pulsed (Note 1) IDP 45 JEDEC ? Drain power dissipation (Tc = 2

4.15. tpca8078_en_datasheet_110831.pdf Size:226K _toshiba2

TPCA8078 MOSFETs Silicon N-Channel MOS (U-MOS?) TPCA8078 TPCA8078 TPCA8078 TPCA8078 1. Applications 1. Applications 1. Applications 1. Applications • Notebook PCs • Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 1.7 m? (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 33 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (T = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) a Char

4.16. tpca8058-h_en_datasheet_100625.pdf Size:233K _toshiba2

TPCA8058-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPCA8058-H TPCA8058-H TPCA8058-H TPCA8058-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate change: QSW = 12 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.0 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 2010-06-25 1 Rev.1.0 TPCA8058-H 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4

4.17. tpca8068-h_en_datasheet_110606.pdf Size:228K _toshiba2

TPCA8068-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPCA8068-H TPCA8068-H TPCA8068-H TPCA8068-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 3.3 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 12 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 2011-06-06 1 Rev.1.0 TPCA8068-H 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (

4.18. tpca8064-h_en_datasheet_100527.pdf Size:269K _toshiba2

TPCA8064-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPCA8064-H TPCA8064-H TPCA8064-H TPCA8064-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate change: QSW = 5.0 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 7.9 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 2010-05-27 1 Rev.1.0 TPCA8064-H 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified)

4.19. tpca8057-h_en_datasheet_100624.pdf Size:260K _toshiba2

TPCA8057-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPCA8057-H TPCA8057-H TPCA8057-H TPCA8057-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate change: QSW = 14 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.6 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 2010-06-24 1 Rev.1.0 TPCA8057-H 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4

4.20. tpca8045-h_en_datasheet_090422.pdf Size:199K _toshiba2

TPCA8045-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?-H) TPCA8045-H High-Efficiency DC-DC Converter Applications Unit: mm Notebook PC Applications 1.27 0.4 ± 0.1 8 0.05 M A Portable Equipment Applications 5 0.15 ± 0.05 • Small footprint due to a small and thin package • High-speed switching 4 0.595 • Small gate charge: QSW = 23 nC (typ.) 1 A • Low drain-source ON-resistance: RDS (ON) = 2.4 m? (typ.) • High forward transfer admittance: |Yfs| = 136 S (typ.) 5.0 ± 0.2 • Low leakage current: IDSS = 10 ?A (max) (VDS = 40 V) • Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA) 0.05 S S 4 1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit 4.25 ± 0.2 Drain-source voltage VDSS 40 V Drain-gate voltage (RGS = 20 k?) VDGR 40 V 8 5 Gate-source voltage VGSS ±20 V DC (Note 1) ID 46 1,2,3:SOURCE 4:GATE Drain current A 5,6,7,8:DRAIN Pulsed (Note 1) IDP 138 JEDEC ? Drain power dis

4.21. tpca8052-h.pdf Size:185K _toshiba2

TPCA8052-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?-H) TPCA8052-H Switching Regulator Applications Unit: mm Motor Drive Applications 1.27 0.4 ± 0.1 8 0.05 M A DC-DC Converter Applications 5 0.15 ± 0.05 • Small footprint due to a small and thin package • High-speed switching 4 0.595 • Small gate charge: QSW = 6.8 nC (typ.) 1 A • Low drain-source ON-resistance: RDS (ON) = 7.2 m? (typ.) • High forward transfer admittance: |Yfs| = 58 S (typ.) 5.0 ± 0.2 • Low leakage current: IDSS = 10 ?A (max) (VDS = 40 V) • Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 0.05 S S 4 1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit 4.25 ± 0.2 Drain-source voltage VDSS 40 V Drain-gate voltage (RGS = 20 k?) VDGR 40 V 8 5 Gate-source voltage VGSS ±20 V DC (Note 1) ID 20 1,2,3:SOURCE 4:GATE Drain current A 5,6,7,8:DRAIN Pulsed (Note 1) IDP 60 JEDEC ? Drain power dissipation (Tc = 25

4.22. tpca8081_en_datasheet_100625.pdf Size:233K _toshiba2

TPCA8081 MOSFETs Silicon N-Channel MOS (U-MOS?) TPCA8081 TPCA8081 TPCA8081 TPCA8081 1. Applications 1. Applications 1. Applications 1. Applications • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 2.3 m? (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) Characte

4.23. tpca8047-h_en_datasheet_090610.pdf Size:195K _toshiba2

TPCA8047-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?-H) TPCA8047-H Switching Regulator Applications Unit: mm Motor Drive Applications 1.27 0.4 ± 0.1 8 0.05 M A DC-DC Converter Applications 5 0.15 ± 0.05 • Small footprint due to a small and thin package • High-speed switching 4 0.595 • Small gate charge: QSW = 13 nC (typ.) 1 A • Low drain-source ON-resistance: RDS (ON) = 4.8 m? (typ.) • High forward transfer admittance: |Yfs| = 92 S (typ.) 5.0 ± 0.2 • Low leakage current: IDSS = 10 ?A (max) (VDS = 40 V) • Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 0.05 S S 4 1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit 4.25 ± 0.2 Drain-source voltage VDSS 40 V Drain-gate voltage (RGS = 20 k?) VDGR 40 V 8 5 Gate-source voltage VGSS ±20 V DC (Note 1) ID 32 1,2,3:SOURCE 4:GATE Drain current A 5,6,7,8:DRAIN Pulsed (Note 1) IDP 96 JEDEC ? Drain power dissipation (Tc = 25

4.24. tpca8049-h.pdf Size:197K _toshiba2

TPCA8049-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?-H) TPCA8049-H Switching Regulator Applications Unit: mm Motor Drive Applications 1.27 0.4 ± 0.1 8 0.05 M A DC-DC Converter Applications 5 0.15 ± 0.05 • Small footprint due to a small and thin package • High-speed switching 4 0.595 • Small gate charge: QSW = 13 nC (typ.) 1 A • Low drain-source ON-resistance: RDS (ON) = 6.6 m? (typ.) • High forward transfer admittance: |Yfs| = 88 S (typ.) 5.0 ± 0.2 • Low leakage current: IDSS = 10 ?A (max) (VDS = 60 V) • Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 0.05 S S 4 1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit 4.25 ± 0.2 Drain-source voltage VDSS 60 V Drain-gate voltage (RGS = 20 k?) VDGR 60 V 8 5 Gate-source voltage VGSS ±20 V DC (Note 1) ID 28 1,2,3:SOURCE 4:GATE Drain current A 5,6,7,8:DRAIN Pulsed (Note 1) IDP 84 JEDEC ? Drain power dissipation (Tc = 25

4.25. tpca8082_en_datasheet_110414.pdf Size:229K _toshiba2

TPCA8082 MOSFETs Silicon N-Channel MOS (U-MOS?) TPCA8082 TPCA8082 TPCA8082 TPCA8082 1. Applications 1. Applications 1. Applications 1. Applications • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 2.9 m? (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) Characteristics Symbol Rating Unit

4.26. tpca8006-h_en_datasheet_061120.pdf Size:188K _toshiba2

TPCA8006-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVII) TPCA8006-H Switching Regulator Applications Unit: mm Motor Drive Applications 0.4±0.1 1.27 0.05 M A 8 5 DC/DC Converter Applications 0.15±0.05 • Small footprint due to a small and thin package • High speed switching 4 1 0.595 • Low drain-source ON-resistance A RDS (ON) = 41 m? (typ.) (VG=10V, ID=9A) : 5.0±0.2 • High forward transfer admittance: |Yfs| = 15 S (typ.) • Low leakage current: IDSS = 100 ?A (max) (VDS = 100 V) 0.05 S S • Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) 1 4 Absolute Maximum Ratings (Ta = 25°C) 4.25±0.2 Characteristic Symbol Rating Unit 8 5 0.8±0.1 1,2,3:SOURCE 4:GATE Drain-source voltage VDSS 100 V 5,6,7,8:DRAIN Drain-gate voltage (RGS = 20 k?) VDGR 100 V JEDEC ? Gate-source voltage VGSS ±20 V JEITA ? DC (Note 1) ID 18 TOSHIBA 2-5Q1A Drain current A Pulsed (Note 1) IDP 36 Weight: 0.069 g (typ.) Drain power

4.27. tpca8087_en_datasheet_100615.pdf Size:257K _toshiba2

TPCA8087 MOSFETs Silicon N-Channel MOS (U-MOS?) TPCA8087 TPCA8087 TPCA8087 TPCA8087 1. Applications 1. Applications 1. Applications 1. Applications • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 1.5 m? (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) Characte

4.28. tpca8059-h_en_datasheet_110412.pdf Size:230K _toshiba2

TPCA8059-H MOSFETs Silicon N-Channel MOS (U-MOS?-H) TPCA8059-H TPCA8059-H TPCA8059-H TPCA8059-H 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 9.1 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.8 m? (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 2011-04-12 1 Rev.2.0 TPCA8059-H 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings

4.29. tpca8011-h_en_datasheet_061116.pdf Size:177K _toshiba2

TPCA8011-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCA8011-H High Efficiency DC/DC Converter Applications Unit: mm Notebook PC Applications 0.4±0.1 1.27 0.5±0.1 0.05 M A 8 5 Portable-Equipment Applications 0.15±0.05 • Small footprint due to a small and thin package • High speed switching 4 1 0.595 • Small gate charge: QSW =16 nC (typ.) 5.0±0.2 A • Low drain-source ON-resistance: RDS (ON) = 2.7 m? (typ.) 0.95±0.05 0.166±0.05 • High forward transfer admittance: |Yfs| =120 S (typ.) 0.05 S S • Low leakage current: IDSS = 10 ?A (max) (VDS = 20 V) 1.1±0.2 1 4 • Enhancement mode: Vth = 0.6 to 1.3 V (VDS = 10 V, ID = 200 ?A) 4.25±0.2 Absolute Maximum Ratings (Ta = 25°C) 8 5 0.8±0.1 1,2,3:SOURCE 4:GATE Characteristic Symbol Rating Unit 5,6,7,8:DRAIN Drain-source voltage VDSS 20 V JEDEC ? Drain-gate voltage (RGS = 20 k?) VDGR 20 V JEITA ? Gate-source voltage VGSS ±12 V TOSHIBA 2-5Q1A DC

4.30. tpca8088_en_datasheet_100618.pdf Size:228K _toshiba2

TPCA8088 MOSFETs Silicon N-Channel MOS (U-MOS?) TPCA8088 TPCA8088 TPCA8088 TPCA8088 1. Applications 1. Applications 1. Applications 1. Applications • Notebook PCs • Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 1.7 m? (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) Characte

See also transistors datasheet: TPCA8015-H , TPCA8016-H , TPCA8018-H , TPCA8019-H , TPCA8020-H , TPCA8021-H , TPCA8022-H , TPCA8023-H , IRFP4227 , TPCA8028-H , TPCA8030-H , TPCA8031-H , TPCA8036-H , TPCA8039-H , TPCA8040-H , TPCA8054-H , TPCA8060-H .

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