2N6799 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2N6799

Type of 2N6799 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 25

Maximum drain-source voltage |Uds|, V: 350V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 3

Maximum junction temperature (Tj), °C: 150

Rise Time of 2N6799 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 900

Maximum drain-source on-state resistance (Rds), Ohm: 1

Package: TO205

Equivalent transistors for 2N6799

2N6799 PDF documents for downloads:

5.1. 2n6790.pdf Size:86K _fairchild_semi

2N6790 Data Sheet December 2001 3.5A, 200V, 0.800 Ohm, N-Channel Power Features MOSFET • 3.5A, 200V The 2N6790 is an N-Channel enhancement mode silicon • rDS(ON) = 0.800? gate power MOS field effect transistor designed for • SOA is Power Dissipation Limited applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high • Nanosecond Switching Speeds power bipolar switching transistors requiring high speed and • Linear Transfer Characteristics low gate drive power. This device can be operated directly from an integrated circuit. • High Input Impedance • Majority Carrier Device Ordering Information • Related Literature PART NUMBER PACKAGE BRAND - TB334 “Guidelines for Soldering Surface Mount 2N6790 TO-205AF 2N6790 Components to PC Boards” NOTE: When ordering, include the entire part number. Symbol D G S Packaging JEDEC TO-205AF DRAIN (CASE) SOURCE GATE ©2001 Fairchild Semiconductor Corporation 2N

5.2. 2n6796u_irfe130.pdf Size:145K _international_rectifier

Provisional Data Sheet No. PD - 9.1666A IRFE130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6796U HEXFET® TRANSISTOR JANTXV2N6796U [REF:MIL-PRF-19500/557] N-CHANNEL ? 100Volt, 0.18? Product Summary ?, HEXFET ? ? The leadless chip carrier (LCC) package represents Part Number BVDSS RDS(on) ID the logical next step in the continual evolution of IRFE130 100V 0.18? 8.0A surface mount technology. The LCC provides designers the extra flexibility they need to increase circuit board density. International Rectifier has Features: engineered the LCC package to meet the specific Hermetically Sealed needs of the power market by increasing the size of Simple Drive Requirements the bottom source pad, thereby enhancing the Ease of Paralleling thermal and electrical performance. The lid of the Small footprint package is grounded to the source to reduce RF Surface Mount interference. Lightweight HEXFET transistors also feature all of the well-es- tablished advantag

5.3. 2n6792_irff320.pdf Size:131K _international_rectifier

PD -90428C IRFF320 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6792 HEXFET?TRANSISTORS JANTXV2N6792 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/555 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF320 400V 1.8? 2.0A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resis- TO-39 tance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as volt- Features: age control, very fast switching, ease of parelleling Repetitive Avalanche Ratings and temperature stability of the electrical parameters. Dynamic dv/dt Rating They are well suited for applications such as switch- Hermetically Sealed ing power supplies, motor controls, inverters, chop- Simple Drive Requirements pers, audio amplifiers and high energy pulse

5.4. 2n6798_irff230.pdf Size:131K _international_rectifier

PD -90431C IRFF230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6798 HEXFET?TRANSISTORS JANTXV2N6798 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/557 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF230 200V 0.40? 5.5A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resis- TO-39 tance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as volt- Features: age control, very fast switching, ease of parelleling Repetitive Avalanche Ratings and temperature stability of the electrical parameters. Dynamic dv/dt Rating They are well suited for applications such as switch- Hermetically Sealed ing power supplies, motor controls, inverters, chop- Simple Drive Requirements pers, audio amplifiers and high energy puls

5.5. 2n6794_irff420.pdf Size:128K _international_rectifier

PD - 90429C IRFF420 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6794 HEXFET?TRANSISTORS JANTXV2N6794 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/555 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF420 500V 3.0? 1.5A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resis- TO-39 tance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as volt- Features: age control, very fast switching, ease of parelleling Repetitive Avalanche Ratings and temperature stability of the electrical parameters. Dynamic dv/dt Rating They are well suited for applications such as switch- Hermetically Sealed ing power supplies, motor controls, inverters, chop- Simple Drive Requirements pers, audio amplifiers and high energy puls

5.6. 2n6790_irff220.pdf Size:133K _international_rectifier

PD - 90427C IRFF220 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6790 HEXFET?TRANSISTORS JANTXV2N6790 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/555 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF220 200V 0.80? 3.5A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resis- TO-39 tance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as volt- Features: age control, very fast switching, ease of parelleling Repetitive Avalanche Ratings and temperature stability of the electrical parameters. Dynamic dv/dt Rating They are well suited for applications such as switch- Hermetically Sealed ing power supplies, motor controls, inverters, chop- Simple Drive Requirements pers, audio amplifiers and high energy pul

5.7. 2n6796_2n6798_2n6800_2n6802.pdf Size:66K _omnirel

2N6796, JANTX2N6796 JANTXV2N6796 2N6800, JANTX2N6800, JANTXV2N6800 2N6798, JANTX2N6798 JANTXV2N6798 2N6802, JANTX2N6802, JANTXV2N6802 JANTX, JANTXV POWER MOSFET IN TO-205 AF PACKAGE, QUALIFIED TO MIL-PRF-19500/557 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor FEATURES •Low RDS(on) •Ease of Paralleling •Qualified to MIL-PRF-19500/557 DESCRIPTION This hermetically packaged QPL product features the latest advanced MOSFET technology. It is ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. PRIMARY ELECTRICAL CHARACTERISTICS @ TC= 25°C PART NUMBER VDS, Volts RDS(on) ID, Amps 2N6796 100 .18 8.0 2N6798 200 .40 5.5 2N6800 400 1.00 3.0 2N6802 500 1.50 2.5 SCHEMATIC MECHANICAL OUTLINE Pin Connection Pin 1: Source Pin 2: Gate Pin 3: Drain (

5.8. 2n6798.pdf Size:21K _semelab

2N6798 MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL ENHANCEMENT MODE TRANSISTOR FEATURES • V(BR)DSS = 200V • ID = 5.5A ! • RDSON = 0.40 TO–39 METAL PACKAGE Underside View PIN 1 – Source PIN 2 – Gate PIN 3 – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDS Drain–Source Voltage 200V VGS Gate–Source Voltage ±20V ID Drain Current Continuous TC = 25°C 5.5A TC = 100°C 3.5A IDM Drain Current Pulsed 22A IA Avalanche Current 3.1A PD Total Device Dissipation @ TC = 25°C 25W TC = 100°C 10W TJ , TSTG Operating and Storage Junction Temperature Range –55 to +150°C THERMAL CHARACTERISTICS R JC Thermal Resistance Junction to Case 5.0°CW R JC Thermal Resistance Junction to Ambient 175°CW TL Maxi

5.9. 2n6796.pdf Size:18K _semelab

2N6796 MECHANICAL DATA Dimensions in mm (inches) TMOS FET TRANSISTOR N – CHANNEL FEATURES • VDSS = 100V • ID = 8A ! ? • RDSON = 0.18? TO–39 METAL PACKAGE Underside View PIN 1 – Source PIN 2 – Gate PIN 3 – Drain Case ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS Drain–Source Voltage 100V VDGR Drain–Gate Voltage (RGS = 1.0m?) 100V VGS Gate–Source Voltage ±20V ID Drain Current Continuous 8.0A IDM Drain Current Pulsed 32A PD Total Device Dissipation @ TC = 25°C 25W Derate above 25°C 0.2W/ °CW TJ , TSTG Operating and Storage Junction Temperature Range –55 to +150°C THERMAL CHARACTERISTICS R? JC Thermal Resistance Junction to Case 5.0°CW R? JC Thermal Resistance Junction to Ambient 175°

5.10. 2n6794.pdf Size:23K _semelab

2N6794 SEME LAB MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET BVDSS 500V ID(cont) 1.5 RDS(on) 3.0 FEATURES ! • AVALANCHE ENERGY RATED • HERMETICALLY SEALED • DYNAMIC dv/dt RATING • SIMPLE DRIVE REQUIREMENTS TO39 – Package Pin 1 – Source Pin 2 – Gate Pin 3 – Drain Also available in a low profile version. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate – Source Voltage ±20V ID Continuous Drain Current (VGS = 10V , Tcase = 25°C) 1.5A ID Continuous Drain Current (VGS = 10V , Tcase = 100°C) 1A IDM Pulsed Drain Current 1 6.5A PD Power Dissipation @ Tcase = 25°C 20W Linear Derating Factor 0.16W/°C EAS Single Pulse Avalanche Energy 2 0.11mJ dv/dt Peak Diode Recovery 3 3.5V/ns

See also transistors datasheet: 2N6796SM , 2N6797 , 2N6797LCC4 , 2N6797-SM , 2N6798 , 2N6798JANTX , 2N6798JANTXV , 2N6798SM , IRL2505 , 2N6799LCC4 , 2N6799-SM , 2N6800 , 2N6800JANTX , 2N6800JANTXV , 2N6800SM , 2N6801 , 2N6801LCC4 .

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