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BUZ11A MOSFET (IC) Datasheet. Cross Reference Search. BUZ11A Equivalent

Type Designator: BUZ11A

Type of BUZ11A transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 75

Maximum drain-source voltage |Uds|, V: 50

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 27

Maximum junction temperature (Tj), °C: 175

Rise Time of BUZ11A transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 900

Maximum drain-source on-state resistance (Rds), Ohm: 0.055

Package: TO220

BUZ11A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUZ11A PDF doc:

1.1. buz11a.pdf Size:116K _st

BUZ11A
BUZ11A

BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V R I DSS DS(on) D BUZ11A 50 V < 0.055 ? 27 A TYPICAL RDS(on) = 0.048 ? AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE 3 HIGH CURRENT CAPABILITY 2 1 175oC OPERATING TEMPERATURE APPLICATIONS TO-220 HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVE

5.1. buz11.pdf Size:173K _st

BUZ11A
BUZ11A

BUZ11 BUZ11FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V R I DSS DS(on) D BUZ11 50 V < 0.04 ? 36 A BUZ11FI 50 V < 0.04 ? 21 A TYPICAL RDS(on) = 0.03 ? AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW GATE CHARGE 2 2 1 1 HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE TO-220 ISOWATT220 APPLICATIONS HIGH CURRE

5.2. buz11s2_buz11s2fi.pdf Size:384K _st2

BUZ11A
BUZ11A

5.3. buz11.pdf Size:81K _fairchild_semi

BUZ11A
BUZ11A

BUZ11 Data Sheet June 1999 File Number 2253.2 30A, 50V, 0.040 Ohm, N-Channel Power Features MOSFET 30A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.040? (BUZ1 field effect transistor designed for applications such as SOA is Power Dissipation Limited 1) switching regulators, switching converters, motor drivers, Nanosecond Switching Speed

5.4. buz110sl.pdf Size:104K _infineon

BUZ11A
BUZ11A

BUZ 110SL SIPMOS? Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.01 RDS(on) ? Enhancement mode Continuous drain current 80 A ID Avalanche rated Logic Level dv/dt rated 175?C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ110SL P-TO220-3-1 Q67040-S4004-A2 Tube

5.5. buz111sl.pdf Size:101K _infineon

BUZ11A
BUZ11A

BUZ 111SL SIPMOS? Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.007 RDS(on) ? Enhancement mode Continuous drain current 80 A ID Avalanche rated Logic Level dv/dt rated 175?C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ111SL P-TO220-3-1 Q67040-S4002-A2 Tube

5.6. buz111s.pdf Size:103K _infineon

BUZ11A
BUZ11A

BUZ 111S SIPMOS? Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.008 RDS(on) ? Enhancement mode Continuous drain current 80 A ID Avalanche rated dv/dt rated 175?C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ111S P-TO220-3-1 Q67040-S4003-A2 Tube BUZ111S E3045A

5.7. buz110s.pdf Size:126K _infineon

BUZ11A
BUZ11A

BUZ 110S SIPMOS? Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.01 RDS(on) ? Enhancement mode Continuous drain current 80 A ID Avalanche rated dv/dt rated 175 ?C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ110S P-TO220-3-1 Q67040-S4005-A2 Tube BUZ110S E3045A

See also transistors datasheet: BUP67 , BUP68 , BUP69 , BUP70 , BUP71 , BUZ10 , BUZ10A , BUZ11 , IRFP460 , BUZ11FI , BUZ20 , BUZ21 , BUZ23 , BUZ24 , BUZ25 , BUZ32 , BUZ35 .

Search Terms:

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