All MOSFET. HAT2057RA Datasheet

 

HAT2057RA MOSFET. Datasheet pdf. Equivalent

Type Designator: HAT2057RA

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 3 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 6 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 155 pF

Maximum Drain-Source On-State Resistance (Rds): 0.033 Ohm

Package: SOP8

HAT2057RA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

HAT2057RA PDF doc:

1.1. e2081636_hat2057ra.pdf Size:81K _renesas

HAT2057RA
HAT2057RA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.1. e208661_hat2051t.pdf Size:90K _renesas

HAT2057RA
HAT2057RA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.2. rej03g1174_hat2058rds.pdf Size:243K _renesas

HAT2057RA
HAT2057RA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.3. rej03g1171_hat2050tds.pdf Size:110K _renesas

HAT2057RA
HAT2057RA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.4. hat2052t.pdf Size:50K _hitachi

HAT2057RA
HAT2057RA

HAT2052T Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-724C (Z) 4th. Edition Feb. 1999 Features • Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High density mounting Outline TSSOP–8 5 6 87 4 123 8 1 D D 4 5 G G 1, 8 Drain S S S S 2, 3, 6, 7 Source 2 3 6 7 4, 5 Gate MOS2 MOS1 HAT2052T Absolute Maximum Rati

4.5. hat2054m.pdf Size:23K _hitachi

HAT2057RA
HAT2057RA

HAT2054M Silicon N Channel Power MOS FET Power Switching ADE-208-756B (Z) Preliminary 3rd. Edition Dec. 1998 Features • Low on-resistance • Low drive current • High density mounting • 4.5V gate drive device can be driven from 5V source Outline TSOP–6 4 5 6 3 1 2 5 6 2 D D D D 1 3 G 4 Source 3 Gate 1, 2, 5, 6 Drain S 4 HAT2054M Absolute Maximum Ratings (Ta

Datasheet: HAT2022R , HAT2024R , HAT2026R , HAT2027R , HAT2028R , HAT2029R , HAT2033R , HAT2038R , IRF4905 , HAT2071R , HAT2080R , HAT2080T , HAT2085R , HAT2085T , HAT2087R , HAT2088R , HAT2089R .

 


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