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RJK03H1DPA MOSFET (IC) Datasheet. Cross Reference Search. RJK03H1DPA Equivalent

Type Designator: RJK03H1DPA

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd), W: 45

Maximum Drain-Source Voltage |Vds|, V: 30

Maximum Gate-Source Voltage |Vgs|, V: 12

Maximum Drain Current |Id|, A: 45

Maximum Junction Temperature (Tj), °C: 150

Rise Time (tr), nS: 9.4

Drain-Source Capacitance (Cd), pF: 590

Maximum Drain-Source On-State Resistance (Rds), Ohm: 0.003

Package: WPAK

RJK03H1DPA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

RJK03H1DPA PDF doc:

1.1. r07ds0216ej_rjk03h1dpa.pdf Size:96K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK03H1DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0216EJ0200 Power Switching Rev.2.00 Dec 07, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 2.0 m? typ. (at VGS = 8.0 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: P

5.1. rej03g1641_rjk0332dpbds.pdf Size:135K _renesas

RJK03H1DPA
RJK03H1DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.2. rej03g1338_rjk0301dpbds.pdf Size:96K _renesas

RJK03H1DPA
RJK03H1DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.3. rej03g1902_rjk03e0dnsds.pdf Size:138K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK03E0DNS REJ03G1902-0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Apr 06, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 4.3 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008JB-A (Package name: HWS

5.4. rej03g1831_rjk03c2dpbds.pdf Size:278K _renesas

RJK03H1DPA
RJK03H1DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.5. rej03g1660_rjk0352dspds.pdf Size:96K _renesas

RJK03H1DPA
RJK03H1DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.6. rej03g1928_rjk03e4dpads.pdf Size:106K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK03E4DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1928-0210 Power Switching Rev.2.10 May 20, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 2.8 m? typ. (at VGS = 8 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWS

5.7. rej03g1598_rjk0316dspds.pdf Size:130K _renesas

RJK03H1DPA
RJK03H1DPA

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5.8. rej03g1340_rjk0302dpbds.pdf Size:126K _renesas

RJK03H1DPA
RJK03H1DPA

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5.9. rej03g1784_rjk0393dpads.pdf Size:93K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK0393DPA REJ03G1784-0220 Silicon N Channel Power MOS FET Rev.2.20 Power Switching May 21, 2010 Features ? High speed switching ? Capable of 4.5V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 3.3 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WP

5.10. rej03g1785_rjk0394dpads.pdf Size:92K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK0394DPA REJ03G1785-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 4.1 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: W

5.11. rej03g1827_rjk0380dpads.pdf Size:83K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK0380DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1827-0220 Power Switching Rev.2.20 May 21, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 2.4 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: P

5.12. rej03g1642_rjk0346dpads.pdf Size:91K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK0346DPA REJ03G1642-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 1.5 m? typ. (at VGS = 10 V) ? Pb-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8

5.13. rej03g1658_rjk0368dpads.pdf Size:94K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK0368DPA REJ03G1658-0410 Silicon N Channel Power MOS FET Rev.4.10 Power Switching May 21, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 11 m? typ. (at VGS = 10 V) ? Pb-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8

5.14. rej03g1917_rjk03f7dnsds.pdf Size:92K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK03F7DNS REJ03G1917-0100 Silicon N Channel Power MOS FET Rev.1.00 Power Switching Apr 21, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 5.2 m? typ. (at VGS = 8 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008JB-A (Package name: HWSO

5.15. rej03g1644_rjk0348dspds.pdf Size:125K _renesas

RJK03H1DPA
RJK03H1DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.16. rej03g1639_rjk0330dpbds.pdf Size:135K _renesas

RJK03H1DPA
RJK03H1DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.17. rej03g1918_rjk03f8dnsds.pdf Size:91K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK03F8DNS REJ03G1918-0100 Silicon N Channel Power MOS FET Rev.1.00 Power Switching Apr 21, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 7 m? typ. (at VGS = 8 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008JB-A (Package name: HWSON-

5.18. rej03g1939_rjk0366dpa02ds.pdf Size:125K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK0366DPA-02 REJ03G1939-0110 Silicon N Channel Power MOS FET Rev.1.10 Power Switching May 21, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 7.4 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name

5.19. rej03g1661_rjk0354dspds.pdf Size:88K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK0354DSP REJ03G1661-0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Apr 05, 2010 Features ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 5.4 m? typ. (at VGS = 10 V) ? Pb-free Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 5 6 7 8 D D D D 5 6 7

5.20. rej03g1787_rjk0396dpads.pdf Size:92K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK0396DPA REJ03G1787-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 6.9 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: W

5.21. rej03g1353_rjk0305dpbds.pdf Size:127K _renesas

RJK03H1DPA
RJK03H1DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.22. rej03g1824_rjk0391dpads.pdf Size:95K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK0391DPA REJ03G1824-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 2.2 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: W

5.23. rej03g1646_rjk0351dpads.pdf Size:94K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK0351DPA REJ03G1646-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 3.2 m? typ. (at VGS = 10 V) ? Pb-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8

5.24. rej03g1652_rjk0358dspds.pdf Size:125K _renesas

RJK03H1DPA
RJK03H1DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.25. rej03g1933_rjk03e9dpads.pdf Size:108K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK03E9DPA REJ03G1933-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 20, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 3.5 m? typ. (at VGS = 8 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK

5.26. rej03g1637_rjk0328dpbds.pdf Size:135K _renesas

RJK03H1DPA
RJK03H1DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.27. rej03g1651_rjk0358dpads.pdf Size:94K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK0358DPA REJ03G1651-0410 Silicon N Channel Power MOS FET Rev.4.10 Power Switching May 21, 2010 Features ? High speed switching ? Capable of 5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 2.6 m? typ. (at VGS = 10 V) Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8 D D D D 6 7

5.28. rej03g1830_rjk03c1dpbds.pdf Size:278K _renesas

RJK03H1DPA
RJK03H1DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.29. rej03g1648_rjk0353dspds.pdf Size:125K _renesas

RJK03H1DPA
RJK03H1DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.30. rej03g1640_rjk0331dpbds.pdf Size:127K _renesas

RJK03H1DPA
RJK03H1DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.31. rej03g1722_rjk0389dpads.pdf Size:163K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1722-0410 High Speed Power Switching Rev.4.10 May 13, 2010 Features ? Low on-resistance ? Capable of 4.5 V gate drive ? High density mounting ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DD-A (Package name: WPAK-D2) 2 3 4 9 D1 D1 D1 S1/D2 5 6 7 8 8 6

5.32. rej03g1341_rjk0303dpbds.pdf Size:132K _renesas

RJK03H1DPA
RJK03H1DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.33. rej03g1352_rjk0304dpbds.pdf Size:132K _renesas

RJK03H1DPA
RJK03H1DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.34. rej03g1931_rjk03e7dpads.pdf Size:117K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK03E7DPA REJ03G1931-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 20, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 2.3 m? typ. (at VGS = 8 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK

5.35. rej03g1903_rjk03e1dnsds.pdf Size:140K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK03E1DNS REJ03G1903-0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Apr 06, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 5.3 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008JB-A (Package name: HWS

5.36. rej03g1649_rjk0355dpads.pdf Size:94K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK0355DPA REJ03G1649-0510 Silicon N Channel Power MOS FET Rev.5.10 Power Switching May 21, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 8.2 m? typ. (at VGS = 10 V) ? Pb-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8

5.37. rej03g1653_rjk0362dspds.pdf Size:125K _renesas

RJK03H1DPA
RJK03H1DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.38. rej03g1721_rjk0351dspds.pdf Size:127K _renesas

RJK03H1DPA
RJK03H1DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.39. rej03g1789_rjk03b7dpads.pdf Size:92K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK03B7DPA REJ03G1789-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 6.0 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPA

5.40. rej03g1919_rjk03f9dnsds.pdf Size:91K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK03F9DNS REJ03G1919-0100 Silicon N Channel Power MOS FET Rev.1.00 Power Switching Apr 21, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 9.5 m? typ. (at VGS = 8 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008JB-A (Package name: HWSO

5.41. rej03g1822_rjk03c0dpads.pdf Size:117K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK03C0DPA REJ03G1822-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 1.5 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: W

5.42. rej03g1921_rjk03c5dpads.pdf Size:80K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK03C5DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1921-0200 Power Switching Rev.2.00 Apr 27, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 2.4 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PW

5.43. rej03g1825_rjk0392dpads.pdf Size:96K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK0392DPA REJ03G1825-0230 Silicon N Channel Power MOS FET Rev.2.30 Power Switching Jun 17, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 2.7 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: W

5.44. rej03g1829_rjk0381dpads.pdf Size:82K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK0381DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1829-0210 Power Switching Rev.2.10 May 13, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 3.4 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PW

5.45. rej03g1791_rjk03b9dpads.pdf Size:93K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK03B9DPA REJ03G1791-0320 Silicon N Channel Power MOS FET Rev.3.20 Power Switching May 12, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 8.3 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: W

5.46. rej03g1930_rjk03e6dpads.pdf Size:95K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK03E6DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1930-0210 Power Switching Rev.2.10 May 20, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 3.8 m? typ. (at VGS = 8 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWS

5.47. rej03g1938_rjk0365dpa02ds.pdf Size:125K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK0365DPA-02 REJ03G1938-0110 Silicon N Channel Power MOS FET Rev.1.10 Power Switching May 21, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 6.3 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name

5.48. rej03g1905_rjk03e3dnsds.pdf Size:138K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK03E3DNS REJ03G1905-0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Apr 06, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 9.0 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008JB-A (Package name: HWS

5.49. rej03g1823_rjk0390dpads.pdf Size:118K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK0390DPA REJ03G1823-0130 Silicon N Channel Power MOS FET Rev.1.30 Power Switching May 12, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 1.7 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: W

5.50. rej03g1826_rjk0379dpads.pdf Size:82K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK0379DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1826-0210 Power Switching Rev.2.10 May 13, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 1.8 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PW

5.51. rej03g1647_rjk0353dpads.pdf Size:94K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK0353DPA REJ03G1647-0310 Silicon N Channel Power MOS FET Rev.3.10 Power Switching May 12, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 4.0 m? typ. (at VGS = 10 V) ? Pb-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8

5.52. rej03g1786_rjk0395dpads.pdf Size:92K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK0395DPA REJ03G1786-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 5.9 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: W

5.53. rej03g1937_rjk0364dpa02ds.pdf Size:125K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK0364DPA-02 REJ03G1937-0110 Silicon N Channel Power MOS FET Rev.1.10 Power Switching May 21, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 5.3 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name

5.54. rej03g1929_rjk03e5dpads.pdf Size:105K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK03E5DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1929-0210 Power Switching Rev.2.10 May 20, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 3.2 m? typ. (at VGS = 8 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWS

5.55. rej03g1916_rjk03f6dnsds.pdf Size:91K _renesas

RJK03H1DPA
RJK03H1DPA

Datasheet RJK03F6DNS REJ03G1916-0100 Silicon N Channel Power MOS FET Rev.1.00 Power Switching Apr 21, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 4.5 m? typ. (at VGS = 8 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8) 5 6 7 8

5.56. rej03g1788_rjk0397dpads.pdf Size:92K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK0397DPA REJ03G1788-0230 Silicon N Channel Power MOS FET Rev.2.30 Power Switching May 12, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 7.8 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: W

5.57. r07ds0265ej_rjk0329dpb.pdf Size:84K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK0329DPB-01 R07DS0265EJ0500 (Previous: REJ03G1638-0400) Silicon N Channel Power MOS FET Rev.5.00 Power Switching Mar 01, 2011 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 1.8 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code

5.58. rej03g1645_rjk0349dpads.pdf Size:95K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK0349DPA REJ03G1645-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 2.4 m? typ. (at VGS = 10 V) ? Pb-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8

5.59. rej03g1934_rjk03f0dpads.pdf Size:108K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK03F0DPA REJ03G1934-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 20, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 5.3 m? typ. (at VGS = 8 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK

5.60. rej03g1643_rjk0348dpads.pdf Size:95K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK0348DPA REJ03G1643-0310 Silicon N Channel Power MOS FET Rev.3.10 Power Switching May 12, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 1.9 m? typ. (at VGS = 10 V) ? Pb-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8

5.61. rej03g1904_rjk03e2dnsds.pdf Size:139K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK03E2DNS REJ03G1904-0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Apr 06, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 6.9 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008JB-A (Package name: HWS

5.62. rej03g1659_rjk0349dspds.pdf Size:127K _renesas

RJK03H1DPA
RJK03H1DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.63. rej03g1790_rjk03b8dpads.pdf Size:92K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK03B8DPA REJ03G1790-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 7.2 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPA

5.64. rej03g1932_rjk03e8dpads.pdf Size:118K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK03E8DPA REJ03G1932-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 20, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 2.9 m? typ. (at VGS = 8 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK

5.65. rej03g1650_rjk0355dspds.pdf Size:126K _renesas

RJK03H1DPA
RJK03H1DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.66. r07ds0094ej_rjk03a4dpa.pdf Size:82K _renesas

RJK03H1DPA
RJK03H1DPA

Preliminary Datasheet RJK03A4DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0094EJ0220 (Previous: REJ03G1828-0210) Power Switching Rev.2.20 Aug 26, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 2.9 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outli

See also transistors datasheet: RJK03E7DPA , RJK03E8DPA , RJK03E9DPA , RJK03F0DPA , RJK03F6DNS , RJK03F7DNS , RJK03F8DNS , RJK03F9DNS , TPC8107 , RJK0451DPB , RJK0452DPB , RJK0453DPB , RJK0454DPB , RJK0455DPB , RJK0456DPB , RJK0629DPE , RJK0629DPK .

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