RJK4006DPP-M0 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: RJK4006DPP-M0

Type of RJK4006DPP-M0 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 400V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 8

Maximum junction temperature (Tj), °C:

Rise Time of RJK4006DPP-M0 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.69

Package: TO220FL

Equivalent transistors for RJK4006DPP-M0

RJK4006DPP-M0 PDF documents for downloads:

1.1. rej03g1547_rjk4006dpdds.pdf Size:116K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular

1.2. r07ds0228ej_rjk4006dpp.pdf Size:79K _renesas

Preliminary Datasheet RJK4006DPP-M0 R07DS0228EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Dec 14, 2010 Features ? Low on-resistance RDS(on) = 0.69 ? typ. (ID = 4 A, VGS = 10 V, Ta = 25?C) ? Low leakage current ? High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D 1. Gate 2. Drain G 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 400 V Gate to source voltage VGSS ?30 V Drain current IDNote4 8 A Drain peak current ID (pulse)Note1 24 A Body-drain diode reverse drain current IDR 8 A Body-drain diode reverse drain peak current IDR (pulse)Note1 24 A Avalanche current IAPNote3 8 A Avalanche energy EARNote3 8.5 mJ Channel dissipation Pch Note2 29 W Channel to case thermal impedance ?ch-c 4.31 ?C/W Channel temperature Tch 150 ?C Storage temperature Tstg –55 to +150 ?C Notes: 1. PW ? 10 ?s, duty cycle ? 1% 2. Value a

4.1. r07ds0229ej_rjk4007dpp.pdf Size:76K _renesas

Preliminary Datasheet RJK4007DPP-M0 R07DS0229EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Dec 15, 2010 Features ? Low on-resistance RDS(on) = 0.47 ? typ. (at ID = 7 A, VGS = 10 V, Ta = 25?C) ? Low leakage current ? High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D 1. Gate 2. Drain G 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 400 V Gate to source voltage VGSS ?30 V Drain current ID 7.6 A Drain peak current ID (pulse)Note1 30 A Body-drain diode reverse drain current IDR 7.6 A Body-drain diode reverse drain peak current IDR (pulse)Note1 30 A Avalanche current IAPNote3 14 A Avalanche energy EARNote3 26.1 mJ Channel dissipation Pch Note2 32 W Channel to case thermal impedance ?ch-c 3.9 ?C/W Channel temperature Tch 150 ?C Storage temperature Tstg –55 to +150 ?C Notes: 1. Single pulse 2. Value at Tc = 25?C

4.2. r07ds0551ej_rjk4002dpp.pdf Size:78K _renesas

Preliminary Datasheet RJK4002DPP-M0 R07DS0551EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Oct 03, 2011 Features ? Low on-state resistance RDS(on) = 2.4 ? typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25?C) ? High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D 1. Gate 2. Drain G 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25?C) Item Symbol Value Unit Drain to source voltage VDSS 400 V Gate to source voltage VGSS ?30 V Drain current ID Note4 3 A Drain peak current ID(pulse) Note1 6 A Body-drain diode reverse drain current IDR 3 A? Body-drain diode reverse drain peak current IDR(pulse) Note1 6 A? Avalanche current IAPNote3 2.5 A Avalanche energy EARNote3 0.357 mJ? Channel dissipation Pch Note 2 20 W Channel to case thermal Impedance ?ch-c 6.25 ?C/W Channel temperature Tch 150 ?C Storage temperature Tstg –55 to +150 ?C Notes: 1. PW ? 10 ms, duty cycle ? 1 % 2. Value at Tc = 2

See also transistors datasheet: RJK2057DPA , RJK2508DPK , RJK2511DPK , RJK2555DPA , RJK2557DPA , RJK3008DPK , RJK4002DPP-M0 , RJK4006DPD , IRFP4468 , RJK4007DPP-M0 , RJK4012DPE , RJK4013DPE , RJK4014DPK , RJK4015DPK , RJK4018DPK , RJK4512DPE , RJK4513DPE .

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