RJK5030DPD MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: RJK5030DPD

Type of RJK5030DPD transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 500V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 5

Maximum junction temperature (Tj), °C:

Rise Time of RJK5030DPD transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 1.6

Package: MP3A

Equivalent transistors for RJK5030DPD

RJK5030DPD PDF documents for downloads:

1.1. r07ds0227ej_rjk5030dpp.pdf Size:77K _renesas

Preliminary Datasheet RJK5030DPP-M0 R07DS0227EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Dec 14, 2010 Features ? Low on-state resistance RDS(on) = 1.3 ? typ. (at ID = 2 A, VGS = 10 V, Ta = 25?C) ? High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D 1. Gate 2. Drain G 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25?C) Item Symbol Value Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS ?30 V Drain current ID 5 A Drain peak current ID (pulse) Note1 20 A Avalanche current IAPNote3 5 A Channel dissipation Pch Note 2 28.5 W Channel to case thermal Impedance ?ch-c 4.38 ?C/W Channel temperature Tch 150 ?C Storage temperature Tstg –55 to +150 ?C Notes: 1. Pulse width limited by safe operating area. 2. Value at Tc = 25?C 3. STch = 25?C, Tch ? 150?C R07DS0227EJ0100 Rev.1.00 Page 1 of 6 Dec 14, 2010 RJK5030DPP-M0 Preliminary Electrical Characteristic

1.2. r07ds0050ej_rjk5030dpd.pdf Size:68K _renesas

Preliminary Datasheet RJK5030DPD R07DS0050EJ0200 (Previous: REJ03G1913-0100) Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Jul 22, 2010 Features ? Low on-state resistance RDS(on) = 1.3 ? typ. (at ID = 2 A, VGS = 10 V, Ta = 25?C) ? High speed switching Outline RENESAS Package code: PRSS0004ZG-A D (Package name : MP-3A) 4 1. Gate 2. Drain G 3. Source 1 2 4. Drain 3 S Absolute Maximum Ratings (Ta = 25?C) Item Symbol Value Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS ?30 V Drain current ID 5 A Drain peak current ID (pulse) Note1 20 A Avalanche current IAPNote3 5 A Channel dissipation Pch Note 2 41.7 W Channel to case thermal Impedance ?ch-c 3.0 ?C/W Channel temperature Tch 150 ?C Storage temperature Tstg –55 to +150 ?C Notes: 1. Pulse width limited by safe operating area. 2. Value at Tc = 25?C 3. STch = 25?C, Tch ? 150?C R07DS0050EJ0200 Rev.2.00 Page 1 of 5 Jul 22, 2010 RJK5030DPD Prelim

4.1. r07ds0205ej_rjk5033dpp.pdf Size:78K _renesas

Preliminary Datasheet RJK5033DPP-M0 R07DS0205EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Nov 29, 2010 Features ? Low on-state resistance RDS(on) = 0.96 ? typ. (at ID = 3 A, VGS = 10 V, Ta = 25?C) ? High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D 1. Gate 2. Drain G 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25?C) Item Symbol Value Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS ?30 V Drain current ID 6 A Drain peak current ID (pulse) Note1 24 A Avalanche current IAPNote3 6 A Channel dissipation Pch Note 2 27.4 W Channel to case thermal Impedance ?ch-c 4.56 ?C/W Channel temperature Tch 150 ?C Storage temperature Tstg –55 to +150 ?C Notes: 1. Pulse width limited by safe operating area. 2. Value at Tc = 25?C 3. STch = 25?C, Tch ? 150?C R07DS0205EJ0100 Rev.1.00 Page 1 of 6 Nov 29, 2010 RJK5033DPP-M0 Preliminary Electrical Characteristi

4.2. r07ds0417ej_rjk5031dpd.pdf Size:94K _renesas

Preliminary Datasheet RJK5031DPD R07DS0417EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 23, 2011 Features • Low on-state resistance RDS(on) = 2.4 ? typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25°C) • High speed switching Outline RENESAS Package code: PRSS0004ZG-A D (Package name : MP-3A) 4 1. Gate 2. Drain G 3. Source 1 2 4. Drain 3 S Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS ±30 V Drain current ID 3 A Drain peak current ID (pulse) Note1 12 A Avalanche current IAPNote3 3 A Channel dissipation Pch Note 2 40.3 W Channel to case thermal Impedance ?ch-c 3.1 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. Pulse width limited by safe operating area. 2. Value at Tc = 25°C 3. STch = 25°C, Tch ? 150°C R07DS0417EJ0100 Rev.1.00 Page 1 of 6 May 23, 2011 RJK5031DPD Preliminary Electrical Characte

4.3. r07ds0179ej_rjk5033dpd.pdf Size:70K _renesas

Preliminary Datasheet RJK5033DPD R07DS0179EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Oct 05, 2010 Features ? Low on-state resistance RDS(on) = 0.96 ? typ. (ID = 3 A, VGS = 10 V, Ta = 25?C) ? High speed switching Outline RENESAS Package code: PRSS0004ZG-A D (Package name : MP-3A) 4 1. Gate 2. Drain G 3. Source 1 2 4. Drain 3 S Absolute Maximum Ratings (Ta = 25?C) Item Symbol Value Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS ?30 V Drain current ID 6 A Drain peak current ID (pulse) Note1 24 A Avalanche current IAPNote3 6 A Channel dissipation Pch Note 2 65 W Channel to case thermal Impedance ? ch-c 1.92 ?C/W Channel temperature Tch 150 ?C Storage temperature Tstg –55 to +150 ?C Notes: 1. Pulse width limited by safe operating area. 2. Value at Tc = 25?C 3. STch = 25?C, Tch ? 150?C R07DS0179EJ0100 Rev.1.00 Page 1 of 6 Oct 05, 2010 RJK5033DPD Preliminary Electrical Characterist

See also transistors datasheet: RJK5013DPK , RJK5014DPK , RJK5015DPK , RJK5015DPM , RJK5018DPK , RJK5020DPK , RJK5026DPE , RJK5026DPP-M0 , IRLML6402 , RJK5030DPP-M0 , RJK5031DPD , RJK5033DPD , RJK5033DPP-M0 , RJK6002DPD , RJK6002DPE , RJK6006DPD , RJK6011DJE .

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