RJK6026DPE MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: RJK6026DPE

Type of RJK6026DPE transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 600V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 5

Maximum junction temperature (Tj), °C:

Rise Time of RJK6026DPE transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 2.4

Package: LDPAK(S)(1)

Equivalent transistors for RJK6026DPE

RJK6026DPE PDF documents for downloads:

1.1. rej03g1479_rjk6026dpeds.pdf Size:117K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular

4.1. r07ds0424ej_rjk6024dpe.pdf Size:98K _renesas

Preliminary Datasheet RJK6024DPE R07DS0424EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Jun 06, 2011 Features • Low on-resistance RDS(on) = 28 ? typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source G 4. Drain 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 600 V Gate to source voltage VGSS ±30 V Drain current ID 0.4 A Drain peak current ID (pulse)Note1 0.6 A Body-drain diode reverse drain current IDR 0.4 A Body-drain diode reverse drain peak current IDR (pulse)Note1 0.6 A Channel dissipation Pch Note2 20 W Channel to case thermal impedance ?ch-c 6.25 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ? 10 ?s, duty cycle ? 1% 2. Value at Tc = 25°C R07DS0424EJ0100 Rev.1.00 Page 1 o

4.2. rej03g1465_rjk6020dpkds.pdf Size:99K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular

4.3. rej03g1936_rjk6024dpdds.pdf Size:74K _renesas

Preliminary Datasheet RJK6024DPD REJ03G1936-0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Jun 01, 2010 Features ? Low on-resistance RDS(on) = 28 ? typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25?C) ? Low drive current ? High density mounting Outline RENESAS Package code: PRSS0004ZG-A D (Package name : MP-3A) 4 1. Gate 2. Drain G 3. Source 1 2 4. Drain 3 S Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 600 V Gate to source voltage VGSS ?30 V Drain current ID 0.4 A Drain peak current ID(pulse)Note1 0.6 A Body-drain diode reverse drain current IDR 0.4 A Body-drain diode reverse drain peak current IDR(pulse)Note1 0.6 A Channel dissipation Pch Note2 27.2 W Channel to case thermal impedance ?ch-c 4.58 ?C/W Channel temperature Tch 150 ?C Storage temperature Tstg –55 to +150 ?C Notes: 1. PW ? 10 ?s, duty cycle ? 1% 2. Value at Tc = 25?C REJ03G1936-0100 Rev.1.00 Page 1 of 6 Ju

4.4. rej03g1870_rjk6025dpeds.pdf Size:91K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular

4.5. rej03g1895_rjk6029djads.pdf Size:79K _renesas

Preliminary Datasheet RJK6029DJA REJ03G1895-0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Jun 18, 2010 Features ? Low on-resistance RDS(on) = 13.5 ? typ. (at ID = 0.1 A, VGS = 10 V, Ta = 25?C) ? Low drive current ? High density mounting Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92(1)) D 1. Source 2. Drain 3. Gate G 32 1 S Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 600 V Gate to source voltage VGSS ±30 V Drain current ID 0.2 A Drain peak current ID (pulse)Note1 0.8 A Body-drain diode reverse drain current IDR 0.2 A Body-drain diode reverse drain peak current IDR (pulse)Note1 0.8 A Channel dissipation Pch 0.75 W Channel to ambient thermal impedance ?ch-a 166.7 ?C/W Channel temperature Tch 150 ?C Storage temperature Tstg –55 to +150 ?C Notes: 1. PW ? 10 ?s, duty cycle ? 1% REJ03G1895-0100 Rev.1.00 Page 1 of 6 Jun 18, 2010 RJK6029DJA Preliminar

4.6. rej03g1484_rjk6022djeds.pdf Size:116K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular

See also transistors datasheet: RJK6018DPK , RJK6018DPM , RJK6020DPK , RJK6022DJE , RJK6024DPD , RJK6024DPE , RJK6025DPD , RJK6025DPE , IRF5305 , RJK6029DJA , RJK6034DPD-E0 , RJK6052DPP-M0 , RJK6053DPP-M0 , RJK6054DPP-M0 , RJK6066DPP-M0 , RJK60S5DPK-M0 , RJL5012DPE .

Keywords