MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
BUZ90
  BUZ90
  BUZ90
 
BUZ90
  BUZ90
  BUZ90
 
BUZ90
  BUZ90
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ552L
2SJ552S ..2SK1515
2SK1516 ..2SK2139
2SK214 ..2SK2738
2SK2740 ..2SK3132
2SK3133 ..2SK3633
2SK3637 ..2SK443
2SK444 ..3N206
3N209 ..5LN01M
5LN01S ..AO4714
AO4718 ..AOD2910
AOD2916 ..AON4803
AON4805L ..AOT11C60
AOT11N60 ..AOW284
AOW2918 ..AP16N50W
AP18N20AGS-HF ..AP3990R-HF
AP3990S-HF ..AP4955GM
AP4957AGM ..AP9412GP
AP9414GM ..AP9962BGH-HF
AP9962GH ..APT10090BFLL
APT10090BLL ..APT5560AN
APT6010B2LL ..AUIRF7316Q
AUIRF7319Q ..BF1105R
BF1105WR ..BLF548
BLF571 ..BSC022N03SG
BSC024NE2LS ..BSS138PW
BSS138W ..BUK663R5-55C
BUK663R7-75C ..BUK9506-55B
BUK9506-75B ..BUZ72A
BUZ73AH ..CED4311
CED540L ..CEP1186
CEP1195 ..CPH6442
CPH6443 ..DMP3020LSS
DMP3025LK3 ..FDA59N30
FDA69N25 ..FDD3680
FDD3682_F085 ..FDMA7672
FDMB3800N ..FDN308P
FDN327N ..FDR8305N
FDR8308P ..FDS9958
FDS9958_F085 ..FQB50N06L
FQB55N10 ..FQPF19N20
FQPF19N20C ..FRM430H
FRM430R ..H02N60SJ
H02N65E ..HAT1108C
HAT1110R ..HITK0203MP
HITK0204MP ..IPA60R160C6
IPA60R165CP ..IPB80N06S4-07
IPB80N06S4L-05 ..IPI45N06S4-09
IPI45N06S4L-08 ..IPP65R380E6
IPP65R600C6 ..IRF1404L
IRF1404S ..IRF6218
IRF6218S ..IRF7379
IRF7379I ..IRF8910G
IRF8915 ..IRFE110
IRFE120 ..IRFM250
IRFM340 ..IRFR111
IRFR120 ..IRFS620
IRFS620A ..IRFU4105
IRFU4105Z ..IRL521
IRL530 ..IRLSZ34A
IRLSZ44A ..IXFH12N100
IXFH12N100F ..IXFK33N50
IXFK34N80 ..IXFN80N50Q2
IXFN80N50Q3 ..IXFV12N120PS
IXFV12N80P ..IXTA1R4N120P
IXTA1R6N100D2 ..IXTH280N055T
IXTH28N50Q ..IXTP120N075T2
IXTP120P065T ..IXTQ75N10P
IXTQ76N25T ..J201
J202 ..KMB035N40DC
KMB050N60P ..KTK920BU
KTK920T ..MTB14P03Q8
MTB15P04J3 ..MTN15N50FP
MTN1634V8 ..MTP3N50E
MTP3N60 ..NDT452AP
NDT452P ..NTMS4800N
NTMS4801N ..PHP33N10
PHP33NQ20T ..PSMN026-80YS
PSMN027-100PS ..RD12MVP1
RD15HVF1 ..RJK0358DPA
RJK0358DSP ..RQ1C065UN
RQ1C075UN ..SDF044JAB-U
SDF054JAA-D ..SFR9214
SFR9220 ..SMG2339P
SMG2340N ..SML5040CN
SML5050AN ..SPD08N50C3
SPD08P06PG ..SSG4512CE
SSG4520H ..SSM3K15FV
SSM3K15TE ..SSP7460N
SSP7461P ..STB80NF55-08T4
STB80NF55L-06 ..STD8N06-1
STD8N06T4 ..STH85N15F4-2
STH8N80 ..STP15NM60ND
STP15NM65N ..STP5NA80
STP5NA80FI ..STU75N3LLH6
STU75N3LLH6-S ..TIS73
TIS74 ..TK8A45D
TK8A45DA ..TPCA8051-H
TPCA8052-H ..UT100N03-Q
UT108N03 ..WTC9435
WTD40N03 ..ZXMP10A18K
ZXMP2120E5 ..ZXMS6006SG
 
BUZ90 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

BUZ90 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: BUZ90

Type of BUZ90 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 75

Maximum drain-source voltage |Uds|, V: 600

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 4.5

Maximum junction temperature (Tj), °C: 150

Rise Time of BUZ90 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 1050

Maximum drain-source on-state resistance (Rds), Ohm: 1.6

Package: TO220AB

Equivalent transistors for BUZ90

BUZ90 PDF doc:

1.1. buz90a.pdf Size:175K _siemens

BUZ90
BUZ90
BUZ 90 A SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 90 A 600 V 4 A 2 ? TO-220 AB C67078-S1321-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 30 °C 4 Pulsed drain current IDpuls TC = 25 °C 16 Avalanche current,limited by Tjmax IAR 4.5 Avalanche energy,periodic limited by Tjmax EAR 8 mJ Avalanche energy, single pulse EAS ID = 4.5 A, VDD = 50 V, RGS = 25 ? L = 29 mH, Tj = 25 °C 320 Gate source voltage VGS ± 20 V Power dissipation Ptot W TC = 25 °C 75 Operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ? 1.67 K/W Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Semiconductor Group 1 07/96 BUZ 90 A Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter

1.2. buz90.pdf Size:176K _siemens

BUZ90
BUZ90
BUZ 90 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 90 600 V 4.5 A 1.6 ? TO-220 AB C67078-S1321-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 28 °C 4.5 Pulsed drain current IDpuls TC = 25 °C 18 Avalanche current,limited by Tjmax IAR 4.5 Avalanche energy,periodic limited by Tjmax EAR 8 mJ Avalanche energy, single pulse EAS ID = 4.5 A, VDD = 50 V, RGS = 25 ? L = 29 mH, Tj = 25 °C 320 Gate source voltage VGS ± 20 V Power dissipation Ptot W TC = 25 °C 75 Operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ? 1.67 K/W Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Semiconductor Group 1 07/96 BUZ 90 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter

1.3. buz902p_buz903p.pdf Size:24K _magnatec

BUZ90
BUZ90
BUZ902P MAGNA BUZ903P TEC MECHANICAL DATA Dimensions in mm N–CHANNEL 4.69 (0.185) 15.49 (0.610) POWER MOSFET 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) POWER MOSFETS FOR AUDIO APPLICATIONS 3.55 (0.140) 3.81 (0.150) FEATURES 1 2 3 • HIGH SPEED SWITCHING 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) • SEMEFAB DESIGNED AND DIFFUSED 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) • HIGH VOLTAGE (220V & 250V) 1.01 (0.040) • HIGH ENERGY RATING 1.40 (0.055) • ENHANCEMENT MODE 2.21 (0.087) 2.59 (0.102) • INTEGRAL PROTECTION DIODES 5.25 (0.215) BSC • COMPLIMENTARY P–CHANNEL TO-247 BUZ907P & BUZ908P Pin 1 – Gate Pin 2 – Source Pin 3 – Drain Case – Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ902P BUZ903P VDSX Drain – Source Voltage 220V 250V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current 8A ID(PK) Body Drain Diode 8A PD Total Power Dissipation @ Tcase = 25°C 125W Tstg Storage Temperature Range –55 to 150°C Tj M

1.4. buz900dp_buz901dp.pdf Size:45K _magnatec

BUZ90
BUZ90
BUZ900DP MAGNA BUZ901DP TEC MECHANICAL DATA Dimensions in mm N–CHANNEL POWER MOSFET 20.0 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 • HIGH SPEED SWITCHING 2.0 1.0 • N–CHANNEL POWER MOSFET 2.0 • SEMEFAB DESIGNED AND DIFFUSED 3.4 • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING 0.6 1.2 • ENHANCEMENT MODE 2.8 • INTEGRAL PROTECTION DIODE 5.45 5.45 • P–CHANNEL ALSO AVAILABLE AS TO–3PBL BUZ905DP & BUZ906DP Pin 1 – Gate Pin 2 – Source Pin 3 – Drain • DOUBLE DIE PACKAGE FOR MAXIMUM Case is Source POWER AND HEATSINK SPACE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ900DP BUZ901DP VDSX Drain – Source Voltage 160V 200V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current 16A ID(PK) Body Drain Diode 16A PD Total Power Dissipation @ Tcase = 25°C 250W Tstg Storage Temperature Range –55 to 150°C Tj Maximum Operating Junction Temperature 150°C R?JC Thermal Resistance Junction – Case 0.5°C/W Prelim. 2/95

1.5. buz907_buz908.pdf Size:25K _magnatec

BUZ90
BUZ90
BUZ907 MAGNA BUZ908 TEC MECHANICAL DATA Dimensions in mm P–CHANNEL POWER MOSFET +0.1 25.0 -0.15 8.7 Max. 10.90 ± 0.1 1.50 11.60 POWER MOSFETS FOR Typ. ± 0.3 AUDIO APPLICATIONS FEATURES 1 2 • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING R 4.0 ± 0.1 R 4.4 ± 0.2 • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY N–CHANNEL TO–3 BUZ902 & BUZ903 Pin 1 – Gate Pin 2 – Drain Case – Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ907 BUZ908 VDSX Drain – Source Voltage -220V -250V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current -8A ID(PK) Body Drain Diode -8A PD Total Power Dissipation @ Tcase = 25°C 125W Tstg Storage Temperature Range –55 to 150°C Tj Maximum Operating Junction Temperature 150°C R?JC Thermal Resistance Junction – Case 1°C/W Prelim. 01/97 Magnatec. Telephone (01455) 554711. Fax (01455) 558843 39.0 ± 1.1 O 20 Max. 30.2 ± 0.15 O 1

See also transistors datasheet: BUZ74 , BUZ74A , BUZ76 , BUZ76A , BUZ80 , BUZ80A , BUZ80AFI , BUZ80FI , IRFZ24N , BUZ900 , BUZ900D , BUZ900DP , BUZ900P , BUZ900X4S , BUZ901 , BUZ901D , BUZ901DP .

Keywords

 BUZ90 Datasheet  BUZ90 Datenblatt  BUZ90 RoHS  BUZ90 Distributor
 BUZ90 Application Notes  BUZ90 Component  BUZ90 Circuit  BUZ90 Schematic
 BUZ90 Equivalent  BUZ90 Cross Reference  BUZ90 Data Sheet  BUZ90 Fiche Technique

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