MOSFET Datasheet


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BUZ90
  BUZ90
  BUZ90
 
BUZ90
  BUZ90
  BUZ90
 
BUZ90
  BUZ90
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AP03N70I-HF
AP03N70J-A-HF ..AP2327GN-HF
AP2328GN-HF ..AP4433GM-HF
AP4434AGH-HF ..AP70L02GJ
AP70L02GP ..AP9565GEH
AP9565GEJ ..AP9992GP-HF
AP9992GR-HF ..APT8015JVFR
APT8015JVR ..AUIRFS3004
AUIRFS3004-7P ..BF963
BF964 ..BLF7G22L-250P
BLF7G22LS-100P ..BSD223P
BSD314SPE ..BUK106-50L
BUK106-50LP ..BUK7606-75B
BUK7607-30B ..BUK9775-55
BUK98150-55 ..CEB12N6
CEB12N65 ..CEK01N7
CEK7002A ..CES2324
CES2331 ..DMN2170U
DMN2215UDM ..F5032
F5033 ..FDB8832_F085
FDB8832_F085 ..FDD8874
FDD8874 ..FDMS2504SDC
FDMS2506SDC ..FDP51N25
FDP52N20 ..FDS6690AS
FDS6690AS ..FK30SM-5
FK30SM-6 ..FQI50N06
FQI5N60C ..FQU2N90TU_AM002
FQU3N50C ..FSJ264D
FSJ264R ..H5N6001P
H6968CTS ..HAT2168H
HAT2168N ..HUF75842P3
HUF75852G3 ..IPB100N04S2L-03
IPB100N04S3-03 ..IPD50N06S4L-08
IPD50N06S4L-12 ..IPP052N06L3G
IPP052NE7N3G ..IPW60R250CP
IPW60R280C6 ..IRF3709ZCS
IRF3709ZL ..IRF6712S
IRF6713S ..IRF7705
IRF7705G ..IRFB11N50A
IRFB23N15D ..IRFI1310N
IRFI3205 ..IRFP331
IRFP332 ..IRFS130
IRFS131 ..IRFS9642
IRFS9643 ..IRFZ22FI
IRFZ24 ..IRLIZ34A
IRLIZ34G ..ITF86130SK8T
ITF86172SK8T ..IXFH40N50Q
IXFH40N50Q2 ..IXFM42N20
IXFM50N20 ..IXFR40N50Q2
IXFR40N90P ..IXFX38N80Q2
IXFX40N90P ..IXTC13N50
IXTC160N10T ..IXTH96N20P
IXTH96N25T ..IXTP4N80P
IXTP50N085T ..IXTU2N80P
IXTU4N60P ..KF5N53F
KF5N53FS ..KP723A
KP723AM ..MKE11R600DCGFC
MLD1N06CL ..MTC5806Q8
MTC8402S6R ..MTN4N65FP
MTN4N65I3 ..NDC632P
NDC651N ..NTD6416ANL
NTD70N03R ..NX3008PBKS
NX3008PBKT ..PMG85XP
PMGD280UN ..PSMN5R8-30LL
PSMN5R8-40YS ..RFG45N06
RFG45N06LE ..RJK1526DPJ
RJK1529DPK ..RSJ300N10
RSJ400N06 ..SDF4N100JAA
SDF4N100JAB ..SGSP382
SGSP461 ..SML1001R1BN
SML1001R1HN ..SML8030CFN
SML8075AN ..SPW12N50C3
SPW15N60C3 ..SSI1N50A
SSI1N60A ..SSM6K31FE
SSM6K32TU ..STB100NF04
STB10NK60Z ..STD26NF10
STD27N3LH5 ..STF20NK50Z
STF20NM60D ..STL15DN4F5
STL15N3LLH5 ..STP30NM30N
STP30NM50N ..STP8NK80ZFP
STP8NM50 ..STW25NM60ND
STW26NM50 ..TK1P90A
TK1Q90A ..TPC8059-H
TPC8060-H ..TPCL4203
TPCM8001-H ..UT9971P
UTC654 ..ZVP3310A
ZVP3310F ..ZXMS6006SG
 
BUZ90 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

BUZ90 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: BUZ90

Type of BUZ90 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 75

Maximum drain-source voltage |Uds|, V: 600

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 4.5

Maximum junction temperature (Tj), °C: 150

Rise Time of BUZ90 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 1050

Maximum drain-source on-state resistance (Rds), Ohm: 1.6

Package: TO220AB

Equivalent transistors for BUZ90

BUZ90 PDF doc:

1.1. buz90a.pdf Size:175K _siemens

BUZ90
BUZ90
BUZ 90 A SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 90 A 600 V 4 A 2 ? TO-220 AB C67078-S1321-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 30 °C 4 Pulsed drain current IDpuls TC = 25 °C 16 Avalanche current,limited by Tjmax IAR 4.5 Avalanche energy,periodic limited by Tjmax EAR 8 mJ Avalanche energy, single pulse EAS ID = 4.5 A, VDD = 50 V, RGS = 25 ? L = 29 mH, Tj = 25 °C 320 Gate source voltage VGS ± 20 V Power dissipation Ptot W TC = 25 °C 75 Operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ? 1.67 K/W Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Semiconductor Group 1 07/96 BUZ 90 A Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter

1.2. buz90.pdf Size:176K _siemens

BUZ90
BUZ90
BUZ 90 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 90 600 V 4.5 A 1.6 ? TO-220 AB C67078-S1321-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 28 °C 4.5 Pulsed drain current IDpuls TC = 25 °C 18 Avalanche current,limited by Tjmax IAR 4.5 Avalanche energy,periodic limited by Tjmax EAR 8 mJ Avalanche energy, single pulse EAS ID = 4.5 A, VDD = 50 V, RGS = 25 ? L = 29 mH, Tj = 25 °C 320 Gate source voltage VGS ± 20 V Power dissipation Ptot W TC = 25 °C 75 Operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ? 1.67 K/W Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Semiconductor Group 1 07/96 BUZ 90 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter

1.3. buz902p_buz903p.pdf Size:24K _magnatec

BUZ90
BUZ90
BUZ902P MAGNA BUZ903P TEC MECHANICAL DATA Dimensions in mm N–CHANNEL 4.69 (0.185) 15.49 (0.610) POWER MOSFET 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) POWER MOSFETS FOR AUDIO APPLICATIONS 3.55 (0.140) 3.81 (0.150) FEATURES 1 2 3 • HIGH SPEED SWITCHING 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) • SEMEFAB DESIGNED AND DIFFUSED 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) • HIGH VOLTAGE (220V & 250V) 1.01 (0.040) • HIGH ENERGY RATING 1.40 (0.055) • ENHANCEMENT MODE 2.21 (0.087) 2.59 (0.102) • INTEGRAL PROTECTION DIODES 5.25 (0.215) BSC • COMPLIMENTARY P–CHANNEL TO-247 BUZ907P & BUZ908P Pin 1 – Gate Pin 2 – Source Pin 3 – Drain Case – Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ902P BUZ903P VDSX Drain – Source Voltage 220V 250V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current 8A ID(PK) Body Drain Diode 8A PD Total Power Dissipation @ Tcase = 25°C 125W Tstg Storage Temperature Range –55 to 150°C Tj M

1.4. buz900dp_buz901dp.pdf Size:45K _magnatec

BUZ90
BUZ90
BUZ900DP MAGNA BUZ901DP TEC MECHANICAL DATA Dimensions in mm N–CHANNEL POWER MOSFET 20.0 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 • HIGH SPEED SWITCHING 2.0 1.0 • N–CHANNEL POWER MOSFET 2.0 • SEMEFAB DESIGNED AND DIFFUSED 3.4 • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING 0.6 1.2 • ENHANCEMENT MODE 2.8 • INTEGRAL PROTECTION DIODE 5.45 5.45 • P–CHANNEL ALSO AVAILABLE AS TO–3PBL BUZ905DP & BUZ906DP Pin 1 – Gate Pin 2 – Source Pin 3 – Drain • DOUBLE DIE PACKAGE FOR MAXIMUM Case is Source POWER AND HEATSINK SPACE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ900DP BUZ901DP VDSX Drain – Source Voltage 160V 200V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current 16A ID(PK) Body Drain Diode 16A PD Total Power Dissipation @ Tcase = 25°C 250W Tstg Storage Temperature Range –55 to 150°C Tj Maximum Operating Junction Temperature 150°C R?JC Thermal Resistance Junction – Case 0.5°C/W Prelim. 2/95

1.5. buz907_buz908.pdf Size:25K _magnatec

BUZ90
BUZ90
BUZ907 MAGNA BUZ908 TEC MECHANICAL DATA Dimensions in mm P–CHANNEL POWER MOSFET +0.1 25.0 -0.15 8.7 Max. 10.90 ± 0.1 1.50 11.60 POWER MOSFETS FOR Typ. ± 0.3 AUDIO APPLICATIONS FEATURES 1 2 • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING R 4.0 ± 0.1 R 4.4 ± 0.2 • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY N–CHANNEL TO–3 BUZ902 & BUZ903 Pin 1 – Gate Pin 2 – Drain Case – Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ907 BUZ908 VDSX Drain – Source Voltage -220V -250V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current -8A ID(PK) Body Drain Diode -8A PD Total Power Dissipation @ Tcase = 25°C 125W Tstg Storage Temperature Range –55 to 150°C Tj Maximum Operating Junction Temperature 150°C R?JC Thermal Resistance Junction – Case 1°C/W Prelim. 01/97 Magnatec. Telephone (01455) 554711. Fax (01455) 558843 39.0 ± 1.1 O 20 Max. 30.2 ± 0.15 O 1

See also transistors datasheet: BUZ74 , BUZ74A , BUZ76 , BUZ76A , BUZ80 , BUZ80A , BUZ80AFI , BUZ80FI , IRFZ24N , BUZ900 , BUZ900D , BUZ900DP , BUZ900P , BUZ900X4S , BUZ901 , BUZ901D , BUZ901DP .

Keywords

 BUZ90 Datasheet  BUZ90 Datenblatt  BUZ90 RoHS  BUZ90 Distributor
 BUZ90 Application Notes  BUZ90 Component  BUZ90 Circuit  BUZ90 Schematic
 BUZ90 Equivalent  BUZ90 Cross Reference  BUZ90 Data Sheet  BUZ90 Fiche Technique

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