MOSFET Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
BUZ90
  BUZ90
  BUZ90
  BUZ90
 
BUZ90
  BUZ90
  BUZ90
  BUZ90
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553L
2SJ553S ..2SK1516
2SK1517 ..2SK2136
2SK2137 ..2SK2735
2SK2735L ..2SK3125
2SK3126 ..2SK357
2SK3582CT ..2SK4195LS
2SK4196LS ..3N159
3N161 ..40821
40822 ..AO4496
AO4498 ..AOC2423
AOC2800 ..AON2701
AON2705 ..AON7752
AON7754 ..AOU4N60
AOU4S60 ..AP13P15GP-HF
AP13P15GS-HF ..AP30T10GP-HF
AP30T10GS-HF ..AP4800AGM-HF
AP4800BGM-HF ..AP9408AGH
AP9408AGI ..AP9930AGM
AP9930GM-HF ..APT1004RGN
APT1004RKN ..APT50M50L2LL
APT50M50PVR ..AUIRF3710ZS
AUIRF3805 ..AUIRLR3915
AUIRLS3034 ..BLF202
BLF2043F ..BSB028N06NN3G
BSB053N03LPG ..BSS123
BSS123A ..BUK653R7-30C
BUK654R0-75C ..BUK9217-75B
BUK9219-55A ..BUZ50A-TO220M
BUZ50ASM ..CED20P10
CED21A2 ..CEP02N7G
CEP02N9 ..CPH3355
CPH3356 ..DMP210DUDJ
DMP210DUFB4 ..FCP9N60N
FCPF11N60 ..FDC642P_F085
FDC645N ..FDM3622
FDM47-06KC5 ..FDMS7608S
FDMS7620S ..FDP8860
FDP8870 ..FDS8926A
FDS8928A ..FQB1P50
FQB22P10 ..FQPF3N25
FQPF3N80C ..FRS240R
FRS244D ..H5N2008P
H5N2301PF ..HAT2080R
HAT2080T ..HUF75332S3S
HUF75333G3 ..IPB022N04LG
IPB023N04NG ..IPD14N06S2-80
IPD15N06S2L-64 ..IPI80N04S3-06
IPI80N04S3-H4 ..IPP90R1K0C3
IPP90R1K2C3 ..IRF2807
IRF2807L ..IRF644
IRF644A ..IRF7450
IRF7451 ..IRF9533
IRF9540 ..IRFH3702
IRFH3707 ..IRFP140
IRFP1405 ..IRFR3411
IRFR3504Z ..IRFS750A
IRFS820 ..IRFW520A
IRFW530A ..IRL8113
IRL8113L ..IRLU3717
IRLU3802 ..IXFH16N120P
IXFH16N50P ..IXFK64N50Q3
IXFK64N60P ..IXFP8N50PM
IXFQ10N80P ..IXFV74N20PS
IXFV96N15P ..IXTA32P20T
IXTA36N30P ..IXTH41N25
IXTH420N04T2 ..IXTP1R4N120P
IXTP1R4N60P ..IXTT16N10D2
IXTT16N20D2 ..JFTJ105
K1109 ..KMB7D0DN40Q
KMB7D0DN40QA ..KU310N10P
KU390N10P ..MTB3D0N03ATH8
MTB40N06E3 ..MTN2510LE3
MTN2510LJ3 ..MTP6405N6
MTP658G6 ..NTD20N03L27
NTD20N06 ..NTR4501
NTR4502P ..PHT6N03LT
PHT6N06LT ..PSMN1R2-30YLC
PSMN1R3-30YL ..RF1S530SM
RF1S540SM ..RJK03E5DPA
RJK03E6DPA ..RQJ0602EGDQS
RQJ0603LGDQA ..SDF08N50
SDF08N60 ..SFP9Z34
SFR2955 ..SMG2306NE
SMG2310A ..SML40J93
SML40L57 ..SPA08N80C3
SPA11N60C3 ..SSDF9504
SSE110N03-03P ..SSM3J16TE
SSM3J304T ..SSM6P05FU
SSM6P09FU ..STB19NF20
STB200N4F3 ..STD3N25-1
STD3N25T4 ..STF26NM60N
STF28NM50N ..STK830P
STK900 ..STP14NK50Z
STP14NK60Z ..STP5N30LFI
STP5N50 ..STS4DNFS30L
STS4DPF20L ..STU616S
STU618S ..TF252TH
TF256 ..TK80S04K3L
TK80S06K3L ..TPCA8046-H
TPCA8047-H ..UP672
UP9971 ..WTC2305
WTC2305DS ..ZXMP10A16K
ZXMP10A17E6 ..ZXMS6006SG
 
BUZ90 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

BUZ90 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: BUZ90

Type of BUZ90 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 75

Maximum drain-source voltage |Uds|, V: 600

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 4.5

Maximum junction temperature (Tj), °C: 150

Rise Time of BUZ90 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 1050

Maximum drain-source on-state resistance (Rds), Ohm: 1.6

Package: TO220AB

Equivalent transistors for BUZ90 - Cross-Reference Search

BUZ90 PDF doc:

1.1. buz90a.pdf Size:175K _siemens

BUZ90
BUZ90
BUZ 90 A SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 90 A 600 V 4 A 2 ? TO-220 AB C67078-S1321-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 30 C 4 Pulsed drain current IDpuls TC = 25 C 16 Avalanche current,limited by Tjmax IAR 4.5 Avalanche energy,periodic limited by Tjmax EAR 8 mJ Avalanche energy, single pulse EAS ID = 4.5 A, VDD = 50 V, RGS = 25 ? L = 29 mH, Tj = 25 C 320 Gate source voltage VGS 20 V Power dissipation Ptot W TC = 25 C 75 Operating temperature Tj -55 ... + 150 C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ? 1.67 K/W Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Semiconductor Group 1 07/96 BUZ 90 A Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter

1.2. buz90.pdf Size:176K _siemens

BUZ90
BUZ90
BUZ 90 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 90 600 V 4.5 A 1.6 ? TO-220 AB C67078-S1321-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 28 C 4.5 Pulsed drain current IDpuls TC = 25 C 18 Avalanche current,limited by Tjmax IAR 4.5 Avalanche energy,periodic limited by Tjmax EAR 8 mJ Avalanche energy, single pulse EAS ID = 4.5 A, VDD = 50 V, RGS = 25 ? L = 29 mH, Tj = 25 C 320 Gate source voltage VGS 20 V Power dissipation Ptot W TC = 25 C 75 Operating temperature Tj -55 ... + 150 C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ? 1.67 K/W Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Semiconductor Group 1 07/96 BUZ 90 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter

1.3. buz900p_buz901p.pdf Size:42K _magnatec

BUZ90
BUZ90
BUZ900P MAGNA BUZ901P TEC MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET 4.69 (0.185) 15.49 (0.610) 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) POWER MOSFETS FOR AUDIO APPLICATIONS 3.55 (0.140) 3.81 (0.150) FEATURES 1 2 3 • HIGH SPEED SWITCHING 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) • N–CHANNEL POWER MOSFET 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) • SEMEFAB DESIGNED AND DIFFUSED 1.01 (0.040) • HIGH VOLTAGE (160V & 200V) 1.40 (0.055) • HIGH ENERGY RATING 2.21 (0.087) 2.59 (0.102) 5.25 (0.215) • ENHANCEMENT MODE BSC • INTEGRAL PROTECTION DIODE TO–247 • P–CHANNEL ALSO AVAILABLE AS Pin 1 – Gate Pin 2 – Source Pin 3 – Drain BUZ905P & BUZ906P ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ900P BUZ901P VDSX Drain – Source Voltage 160V 200V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current 8A ID(PK) Body Drain Diode 8A PD Total Power Dissipation @ Tcase =

1.4. buz900_buz901.pdf Size:63K _magnatec

BUZ90
BUZ90
BUZ900 www.DataSheet4U.com MAGNA BUZ901 TEC MECHANICAL DATA Dimensions in mm N–CHANNEL POWER MOSFET +0.1 25.0 -0.15 8.7 Max. 10.90 ± 0.1 1.50 11.60 POWER MOSFETS FOR Typ. ± 0.3 AUDIO APPLICATIONS FEATURES 1 2 • HIGH SPEED SWITCHING • N–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) R 4.0 ± 0.1 R 4.4 ± 0.2 • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE TO–3 • P–CHANNEL ALSO AVAILABLE AS Pin 1 – Gate Pin 2 – Drain Case – Source BUZ905 & BUZ906 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ900 BUZ901 VDSX Drain – Source Voltage 160V 200V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current 8A ID(PK) Body Drain Diode 8A PD Total Power Dissipation @ Tcase = 25°C 125W Tstg Storage Temperature Range –55 to 150°C Tj Maximum Operating Junction Temperature 150°C RθJC Thermal Resistance Junction – Case 1°C/W Prelim. 10/94

1.5. buz900x4s_buz901x4s.pdf Size:35K _magnatec

BUZ90
BUZ90
BUZ900X4S MAGNA BUZ901X4S TEC NEW PRODUCT UNDER DEVELOPMENT MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) 31.7 (1.248) POWER MOSFETS FOR 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) (4 places) AUDIO APPLICATIONS 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) R 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) FEATURES 4 3 • HIGH SPEED SWITCHING 3.3 (0.129) 5.1 (0.201) 4.0 (0.157) 3.6 (0.143) 5.9 (0.232) R = (2 Places) • N–CHANNEL POWER MOSFET 14.9 (0.587) 1.95 (0.077) 15.1 (0.594) 2.14 (0.084) 30.1 (1.185) • SEMEFAB DESIGNED AND DIFFUSED 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE SOT227 • INTEGRAL PROTECTION DIODE Pin 1 – Drain Pin 2 – Source • P–CHANNEL ALSO AVAILABLE Pin 3 – Gate Pin 4 – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C

1.6. buz905d_buz906d.pdf Size:44K _magnatec

BUZ90
BUZ90
BUZ905D MAGNA BUZ906D TEC MECHANICAL DATA Dimensions in mm P–CHANNEL POWER MOSFET +0.1 25.0 -0.15 8.7 Max. 10.90 ± 0.1 1.50 11.60 POWER MOSFETS FOR Typ. ± 0.3 AUDIO APPLICATIONS FEATURES 1 2 • HIGH SPEED SWITCHING • P–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) R 4.0 ± 0.1 R 4.4 ± 0.2 • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE TO–3 • N–CHANNEL ALSO AVAILABLE AS Pin 1 – Gate Pin 2 – Drain Case – Source BUZ900D & BUZ901D • DOUBLE DIE PACKAGE FOR MAXIMUM POWER AND HEATSINK SPACE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ905D BUZ906D VDSX Drain – Source Voltage -160V -200V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current -16A ID(PK) Body Drain Diode -16A PD Total Power Dissipation @ Tcase = 25°C 250W Tstg Storage Temperature Range –55 to 150°C Tj Maximum Operating Junction Temperature 150°C RθJC Therm

1.7. buz905dp_buz906dp.pdf Size:43K _magnatec

BUZ90
BUZ90
BUZ905DP MAGNA BUZ906DP TEC MECHANICAL DATA Dimensions in mm P–CHANNEL POWER MOSFET 20.0 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 • HIGH SPEED SWITCHING 2.0 1.0 • P–CHANNEL POWER MOSFET 2.0 • SEMEFAB DESIGNED AND DIFFUSED 3.4 • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING 0.6 1.2 • ENHANCEMENT MODE 2.8 • INTEGRAL PROTECTION DIODE 5.45 5.45 • N–CHANNEL ALSO AVAILABLE AS TO–3PBL BUZ900DP & BUZ901DP Pin 1 – Gate Pin 2 – Source Pin 3 – Drain • DOUBLE DIE PACKAGE FOR MAXIMUM Case is Source POWER AND HEATSINK SPACE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ905DP BUZ906DP VDSX Drain – Source Voltage -160V -200V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current -16A ID(PK) Body Drain Diode -16A PD Total Power Dissipation @ Tcase = 25°C 250W Tstg Storage Temperature Range –55 to 150°C Tj Maximum Operating Junction Temperature 150°C RθJC Thermal

1.8. buz902p_buz903p.pdf Size:24K _magnatec

BUZ90
BUZ90
BUZ902P MAGNA BUZ903P TEC MECHANICAL DATA Dimensions in mm NCHANNEL 4.69 (0.185) 15.49 (0.610) POWER MOSFET 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) POWER MOSFETS FOR AUDIO APPLICATIONS 3.55 (0.140) 3.81 (0.150) FEATURES 1 2 3 HIGH SPEED SWITCHING 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) SEMEFAB DESIGNED AND DIFFUSED 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) HIGH VOLTAGE (220V & 250V) 1.01 (0.040) HIGH ENERGY RATING 1.40 (0.055) ENHANCEMENT MODE 2.21 (0.087) 2.59 (0.102) INTEGRAL PROTECTION DIODES 5.25 (0.215) BSC COMPLIMENTARY PCHANNEL TO-247 BUZ907P & BUZ908P Pin 1 Gate Pin 2 Source Pin 3 Drain Case Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) BUZ902P BUZ903P VDSX Drain Source Voltage 220V 250V VGSS Gate Source Voltage 14V ID Continuous Drain Current 8A ID(PK) Body Drain Diode 8A PD Total Power Dissipation @ Tcase = 25C 125W Tstg Storage Temperature Range 55 to 150C Tj M

1.9. buz900dp_buz901dp.pdf Size:45K _magnatec

BUZ90
BUZ90
BUZ900DP MAGNA BUZ901DP TEC MECHANICAL DATA Dimensions in mm NCHANNEL POWER MOSFET 20.0 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 HIGH SPEED SWITCHING 2.0 1.0 NCHANNEL POWER MOSFET 2.0 SEMEFAB DESIGNED AND DIFFUSED 3.4 HIGH VOLTAGE (160V & 200V) HIGH ENERGY RATING 0.6 1.2 ENHANCEMENT MODE 2.8 INTEGRAL PROTECTION DIODE 5.45 5.45 PCHANNEL ALSO AVAILABLE AS TO3PBL BUZ905DP & BUZ906DP Pin 1 Gate Pin 2 Source Pin 3 Drain DOUBLE DIE PACKAGE FOR MAXIMUM Case is Source POWER AND HEATSINK SPACE ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) BUZ900DP BUZ901DP VDSX Drain Source Voltage 160V 200V VGSS Gate Source Voltage 14V ID Continuous Drain Current 16A ID(PK) Body Drain Diode 16A PD Total Power Dissipation @ Tcase = 25C 250W Tstg Storage Temperature Range 55 to 150C Tj Maximum Operating Junction Temperature 150C R?JC Thermal Resistance Junction Case 0.5C/W Prelim. 2/95

1.10. buz907dp_buz908dp.pdf Size:26K _magnatec

BUZ90
BUZ90
BUZ907DP MAGNA BUZ908DP TEC MECHANICAL DATA Dimensions in mm P–CHANNEL POWER MOSFET 20.0 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 • HIGH SPEED SWITCHING 2.0 1.0 2.0 • SEMEFAB DESIGNED AND DIFFUSED 3.4 • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING 0.6 1.2 • ENHANCEMENT MODE 2.8 • INTEGRAL PROTECTION DIODES 5.45 5.45 • COMPLIMENTARY N–CHANNEL TO-3PBL BUZ902DP & BUZ903DP Pin 3 – Drain Pin 1 – Gate Pin 2 – Source Case – Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ907DP BUZ908DP VDSX Drain – Source Voltage -220V -250V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current -16A ID(PK) Body Drain Diode -16A PD Total Power Dissipation @ Tcase = 25°C 250W Tstg Storage Temperature Range –55 to 150°C Tj Maximum Operating Junction Temperature 150°C RθJC Thermal Resistance Junction – Case 0.5°C/W Prelim. 01/97 Magnatec. Telephone (01455) 554711. Fa

1.11. buz907_buz908.pdf Size:25K _magnatec

BUZ90
BUZ90
BUZ907 MAGNA BUZ908 TEC MECHANICAL DATA Dimensions in mm PCHANNEL POWER MOSFET +0.1 25.0 -0.15 8.7 Max. 10.90 0.1 1.50 11.60 POWER MOSFETS FOR Typ. 0.3 AUDIO APPLICATIONS FEATURES 1 2 HIGH SPEED SWITCHING SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (220V & 250V) HIGH ENERGY RATING R 4.0 0.1 R 4.4 0.2 ENHANCEMENT MODE INTEGRAL PROTECTION DIODES COMPLIMENTARY NCHANNEL TO3 BUZ902 & BUZ903 Pin 1 Gate Pin 2 Drain Case Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) BUZ907 BUZ908 VDSX Drain Source Voltage -220V -250V VGSS Gate Source Voltage 14V ID Continuous Drain Current -8A ID(PK) Body Drain Diode -8A PD Total Power Dissipation @ Tcase = 25C 125W Tstg Storage Temperature Range 55 to 150C Tj Maximum Operating Junction Temperature 150C R?JC Thermal Resistance Junction Case 1C/W Prelim. 01/97 Magnatec. Telephone (01455) 554711. Fax (01455) 558843 39.0 1.1 O 20 Max. 30.2 0.15 O 1

1.12. buz907p_buz908p.pdf Size:26K _magnatec

BUZ90
BUZ90
BUZ907P MAGNA BUZ908P TEC MECHANICAL DATA Dimensions in mm P–CHANNEL 4.69 (0.185) 15.49 (0.610) POWER MOSFET 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) POWER MOSFETS FOR AUDIO APPLICATIONS 3.55 (0.140) 3.81 (0.150) FEATURES 1 2 3 • HIGH SPEED SWITCHING 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) • SEMEFAB DESIGNED AND DIFFUSED 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) • HIGH VOLTAGE (220V & 250V) 1.01 (0.040) • HIGH ENERGY RATING 1.40 (0.055) • ENHANCEMENT MODE 2.21 (0.087) 2.59 (0.102) • INTEGRAL PROTECTION DIODES 5.25 (0.215) BSC • COMPLIMENTARY N–CHANNEL TO-247 BUZ902P & BUZ903P Pin 1 – Gate Pin 3 – Drain Pin 2 – Source Case– Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ907P BUZ908P VDSX Drain – Source Voltage -220V -250V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current -8A ID(PK) Body Drain Diode -8A PD Total Power Dissipation @ Tcase = 25°C 125W Tstg Stor

1.13. buz902d_buz903d.pdf Size:50K _magnatec

BUZ90
BUZ90
BUZ902D MAGNA BUZ903D TEC MECHANICAL DATA Dimensions in mm N–CHANNEL POWER MOSFET +0.1 25.0 -0.15 8.7 Max. 10.90 ± 0.1 1.50 11.60 POWER MOSFETS FOR Typ. ± 0.3 AUDIO APPLICATIONS FEATURES 1 2 • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING R 4.0 ± 0.1 R 4.4 ± 0.2 • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY P–CHANNEL TO–3 BUZ907D & BUZ908D Pin 1 – Gate Pin 2 – Drain Case – Source www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ902D BUZ903D VDSX Drain – Source Voltage 220V 250V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current 16A ID(PK) Body Drain Diode 16A PD Total Power Dissipation @ Tcase = 25°C 250W Tstg Storage Temperature Range –55 to 150°C Tj Maximum Operating Junction Temperature 150°C RθJC Thermal Resistance Junction – Case 0.5°C/W Prelim. 01/97 Magnatec. Telephone

1.14. buz905-06.pdf Size:40K _magnatec

BUZ90
BUZ90
BUZ905 MAGNA BUZ906 TEC MECHANICAL DATA Dimensions in mm P–CHANNEL POWER MOSFET +0.1 25.0 -0.15 8.7 Max. 10.90 ± 0.1 1.50 11.60 POWER MOSFETS FOR Typ. ± 0.3 AUDIO APPLICATIONS FEATURES 1 2 • HIGH SPEED SWITCHING • P–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) R 4.0 ± 0.1 R 4.4 ± 0.2 • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE TO–3 • N–CHANNEL ALSO AVAILABLE AS Pin 1 – Gate Pin 2 – Drain Case – Source BUZ900 & BUZ901 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ905 BUZ906 VDSX Drain – Source Voltage -160V -200V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current -8A ID(PK) Body Drain Diode -8A PD Total Power Dissipation @ Tcase = 25°C 125W Tstg Storage Temperature Range –55 to 150°C Tj Maximum Operating Junction Temperature 150°C RθJC Thermal Resistance Junction – Case 1.0°C/W Prelim. 10/94 Magnatec. Tel

1.15. buz905p_buz906p.pdf Size:40K _magnatec

BUZ90
BUZ90
BUZ905P MAGNA BUZ906P TEC MECHANICAL DATA Dimensions in mm (inches) P–CHANNEL POWER MOSFET 4.69 (0.185) 15.49 (0.610) 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) POWER MOSFETS FOR AUDIO APPLICATIONS 3.55 (0.140) 3.81 (0.150) FEATURES 1 2 3 • HIGH SPEED SWITCHING 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) • P–CHANNEL POWER MOSFET 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) • SEMEFAB DESIGNED AND DIFFUSED 1.01 (0.040) • HIGH VOLTAGE (160V & 200V) 1.40 (0.055) • HIGH ENERGY RATING 2.21 (0.087) 2.59 (0.102) 5.25 (0.215) • ENHANCEMENT MODE BSC • INTEGRAL PROTECTION DIODE TO–247 • N–CHANNEL ALSO AVAILABLE AS Pin 1 – Gate Pin 2 – Source Pin 3 – Drain BUZ900P & BUZ901P ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ905P BUZ906P VDSX Drain – Source Voltage -160V -200V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current -8A ID(PK) Body Drain Diode -8A PD Total Power Dissipation @ Tc

1.16. buz900d_buz901d.pdf Size:44K _magnatec

BUZ90
BUZ90
BUZ900D MAGNA BUZ901D TEC MECHANICAL DATA Dimensions in mm N–CHANNEL POWER MOSFET +0.1 25.0 -0.15 8.7 Max. 10.90 ± 0.1 1.50 11.60 POWER MOSFETS FOR Typ. ± 0.3 AUDIO APPLICATIONS FEATURES 1 2 • HIGH SPEED SWITCHING • N–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) R 4.0 ± 0.1 R 4.4 ± 0.2 • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE TO–3 • P–CHANNEL ALSO AVAILABLE AS Pin 1 – Gate Pin 2 – Drain Case – Source BUZ905D & BUZ906D • DOUBLE DIE PACKAGE FOR MAXIMUM POWER AND HEATSINK SPACE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ900D BUZ901D VDSX Drain – Source Voltage 160V 200V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current 16A ID(PK) Body Drain Diode 16A PD Total Power Dissipation @ Tcase = 25°C 250W Tstg Storage Temperature Range –55 to 150°C Tj Maximum Operating Junction Temperature 150°C RθJC Thermal R

1.17. buz907d_buz908d.pdf Size:28K _magnatec

BUZ90
BUZ90
BUZ907D MAGNA BUZ908D TEC MECHANICAL DATA Dimensions in mm P–CHANNEL POWER MOSFET +0.1 25.0 -0.15 8.7 Max. 10.90 ± 0.1 1.50 11.60 POWER MOSFETS FOR Typ. ± 0.3 AUDIO APPLICATIONS FEATURES 1 2 • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING R 4.0 ± 0.1 R 4.4 ± 0.2 • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY N–CHANNEL TO–3 BUZ902D & BUZ903D Pin 1 – Gate Pin 2 – Drain Case – Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ907D BUZ908D VDSX Drain – Source Voltage -220V -250V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current -16A ID(PK) Body Drain Diode -16A PD Total Power Dissipation @ Tcase = 25°C 250W Tstg Storage Temperature Range –55 to 150°C Tj Maximum Operating Junction Temperature 150°C RθJC Thermal Resistance Junction – Case 0.5°C/W Prelim. 01/97 Magnatec. Telephone (01455) 554711. F

1.18. buz905x4s_buz906x4s.pdf Size:35K _magnatec

BUZ90
BUZ90
BUZ905X4S MAGNA BUZ906X4S TEC NEW PRODUCT UNDER DEVELOPMENT MECHANICAL DATA Dimensions in mm (inches) P–CHANNEL POWER MOSFET 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) 31.7 (1.248) POWER MOSFETS FOR 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) (4 places) AUDIO APPLICATIONS 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) R 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) FEATURES 4 3 • HIGH SPEED SWITCHING 3.3 (0.129) 5.1 (0.201) 4.0 (0.157) 3.6 (0.143) 5.9 (0.232) R = (2 Places) • P–CHANNEL POWER MOSFET 14.9 (0.587) 1.95 (0.077) 15.1 (0.594) 2.14 (0.084) 30.1 (1.185) • SEMEFAB DESIGNED AND DIFFUSED 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE SOT227 • INTEGRAL PROTECTION DIODE Pin 1 – Drain Pin 2 – Source • N–CHANNEL ALSO AVAILABLE Pin 3 – Gate Pin 4 – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C

1.19. buz902dp_buz903dp.pdf Size:26K _magnatec

BUZ90
BUZ90
BUZ902DP MAGNA BUZ903DP TEC MECHANICAL DATA Dimensions in mm N–CHANNEL POWER MOSFET 20.0 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 • HIGH SPEED SWITCHING 2.0 1.0 2.0 • SEMEFAB DESIGNED AND DIFFUSED 3.4 • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING 0.6 1.2 • ENHANCEMENT MODE 2.8 • INTEGRAL PROTECTION DIODES 5.45 5.45 • COMPLIMENTARY P–CHANNEL TO-3PBL BUZ907DP & BUZ908DP Pin 3 – Drain Pin 1 – Gate Pin 2 – Source Case – Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ902DP BUZ903DP VDSX Drain – Source Voltage 220V 250V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current 16A ID(PK) Body Drain Diode 16A PD Total Power Dissipation @ Tcase = 25°C 250W Tstg Storage Temperature Range –55 to 150°C Tj Maximum Operating Junction Temperature 150°C RθJC Thermal Resistance Junction – Case 0.5°C/W Prelim. 01/97 Magnatec. Telephone (01455) 554711. Fax (0

1.20. buz902_buz903.pdf Size:50K _magnatec

BUZ90
BUZ90
BUZ902 MAGNA BUZ903 TEC MECHANICAL DATA Dimensions in mm N–CHANNEL POWER MOSFET +0.1 25.0 -0.15 8.7 Max. 10.90 ± 0.1 1.50 11.60 POWER MOSFETS FOR Typ. ± 0.3 AUDIO APPLICATIONS FEATURES 1 2 • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING R 4.0 ± 0.1 R 4.4 ± 0.2 • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY P–CHANNEL TO–3 BUZ907 & BUZ908 Pin 1 – Gate Pin 2 – Drain Case – Source www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ902 BUZ903 VDSX Drain – Source Voltage 220V 250V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current 8A ID(PK) Body Drain Diode 8A PD Total Power Dissipation @ Tcase = 25°C 125W Tstg Storage Temperature Range –55 to 150°C Tj Maximum Operating Junction Temperature 150°C RθJC Thermal Resistance Junction – Case 1°C/W Prelim. 01/97 Magnatec. Telephone (01455) 55

See also transistors datasheet: BUZ74 , BUZ74A , BUZ76 , BUZ76A , BUZ80 , BUZ80A , BUZ80AFI , BUZ80FI , IRFZ24N , BUZ900 , BUZ900D , BUZ900DP , BUZ900P , BUZ900X4S , BUZ901 , BUZ901D , BUZ901DP .

Keywords

 BUZ90 Datasheet  BUZ90 Datenblatt  BUZ90 RoHS  BUZ90 Distributor
 BUZ90 Application Notes  BUZ90 Component  BUZ90 Circuit  BUZ90 Schematic
 BUZ90 Equivalent  BUZ90 Cross Reference  BUZ90 Data Sheet  BUZ90 Fiche Technique

 

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