MOSFET Datasheet



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BUZ90
  BUZ90
  BUZ90
 
BUZ90
  BUZ90
  BUZ90
 
BUZ90
  BUZ90
 
 
List
03N06 ..2N5116
2N5196 ..2N6798
2N6798JANTX ..2N7272H3
2N7272H4 ..2SJ365
2SJ368 ..2SK1082
2SK1086 ..2SK1459LS
2SK146 ..2SK1888
2SK1889 ..2SK2333
2SK2339 ..2SK2706
2SK2707 ..2SK3067
2SK3068 ..2SK3467
2SK3469-01MR ..2SK4016
2SK4017 ..2SK901
2SK902 ..3SK180-6
3SK181 ..7N50
7N50A ..AO4842
AO4850 ..AOD4185
AOD4186 ..AON6298
AON6400 ..AOT254L
AOT25S65 ..AOWF2606
AOWF412 ..AP1RC03GMT-HF
AP20N15AGH-HF ..AP40T03GH
AP40T03GI ..AP60T03GH-HF
AP60T03GI ..AP9466GH
AP9466GJ ..AP9971GD
AP9971GH ..APM9410K
APM9424 ..APT20M38BVR
APT20M38SVR ..APT8015JVFR
APT8015JVR ..AUIRFR2607Z
AUIRFR2905Z ..BF904
BF904A ..BLF6G38S-25
BLF7G10L-250 ..BSB019N03LXG
BSB024N03LXG ..BSR92P
BSS100 ..BUK653R3-30C
BUK653R4-40C ..BUK9214-30A
BUK9215-55A ..BUZ50A-220M
BUZ50A-220SM ..CED16N10
CED16N10L ..CEP02N65G
CEP02N6A ..CL616BA
CLY2 ..DMN62D1SFB
DMN66D0LDW ..FCP110N65F
FCP11N60 ..FDC6302P
FDC6303N ..FDG6335N
FDG8842CZ ..FDMS3660AS
FDMS3660S ..FDP5680
FDP5690 ..FDS8449
FDS8449_F085 ..FQA44N30
FQA46N15 ..FQPF11N50CF
FQPF11P06 ..FRM9130R
FRM9140D ..FTD02N70
FTD04N60A ..H5N3003P
H5N3004P ..HAT2137H
HAT2139H ..HUF75545P3
HUF75545S3S ..IPB049NE7N3G
IPB050N06NG ..IPD30N06S2L-13
IPD30N06S2L-23 ..IPI90R800C3
IPL60R199CP ..IPU103N08N3G
IPU135N03LG ..IRF3305
IRF3315 ..IRF6621
IRF6622 ..IRF7495
IRF7501 ..IRF9633
IRF9640 ..IRFH5250D
IRFH5255 ..IRFP230
IRFP231 ..IRFR411
IRFR420 ..IRFS9133
IRFS9140 ..IRFW840A
IRFWZ14A ..IRLD024
IRLD110 ..IRLW540A
IRLW610A ..IXFH22N55
IXFH22N60P ..IXFK90N20
IXFK90N20Q ..IXFR15N100Q3
IXFR15N80Q ..IXFX170N20T
IXFX180N07 ..IXTA50N20P
IXTA50N25T ..IXTH50P085
IXTH50P10 ..IXTP24P085T
IXTP260N055T2 ..IXTT360N055T2
IXTT36N50P ..KF13N50F
KF13N50P ..KMC7D0CN20C
KMC7D0CN20CA ..LS3954
LS3954A ..MTB20P03L3
MTB22N04J3 ..MTN2302V3
MTN2304M3 ..MTP4411M3
MTP4411Q8 ..NTA7002N
NTB25P06 ..NTNUS3171PZ
NTP2955 ..P0903BEA
P0903BIS ..P45N03LTFG
P5002CDG ..PHB42N03LT
PHB44N06LT ..PMF3800SN
PMF400UN ..PSMN5R0-100PS
PSMN5R0-30YL ..RFD12N06RLE
RFD12N06RLESM ..RJK0454DPB
RJK0455DPB ..RQK0605JGDQA
RQK0606KGDQA ..SDF10N90
SDF11N100GAF ..SFR9220
SFR9224 ..SMG2301
SMG2301P ..SML4080CN
SML4080GN ..SPA03N60C3
SPA04N50C3 ..SSD40P04-20D
SSD40P04-20DE ..SSF4N60G
SSF4N80AS ..SSG4940NC
SSG4942N ..SSM3K36MFV
SSM3K36TU ..SSPL6005
SSPL6022 ..STB458D
STB45NF06 ..STD5N20T4
STD5N52K3 ..STF8N65M5
STF8NK100Z ..STL90N3LLH6
STL9N3LLH5 ..STP20N06
STP20N06FI ..STP656F
STP65NF06 ..STT03N20
STT04N20 ..STV55N05L
STV55N06L ..TK12A50D
TK12A53D ..TPC6109-H
TPC6110 ..TPCA8A02-H
TPCA8A04-H ..UT3404
UT3406 ..YW3407
ZDM4206N ..ZXMP6A18DN8
ZXMP6A18K ..ZXMS6006SG
 
BUZ90 MOSFET DataSheet. BJT, Power MOSFET, IGBT, IC Catalog
 

BUZ90 MOSFET (IC) Datasheet. Cross Reference Search. BUZ90 Equivalent

Type Designator: BUZ90

Type of BUZ90 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 75

Maximum drain-source voltage |Uds|, V: 600

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 4.5

Maximum junction temperature (Tj), °C: 150

Rise Time of BUZ90 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 1050

Maximum drain-source on-state resistance (Rds), Ohm: 1.6

Package: TO220AB

Equivalent transistors for BUZ90 - Cross-Reference Search

 

BUZ90 PDF doc:

1.1. buz90a.pdf Size:175K _siemens

BUZ90
BUZ90
BUZ 90 A SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 90 A 600 V 4 A 2 ? TO-220 AB C67078-S1321-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 30 C 4 Pulsed drain current IDpuls TC = 25 C 16 Avalanche current,limited by Tjmax IAR 4.5 Avalanche energy,periodic limited by Tjmax EAR 8 mJ Avalanche energy, single pulse EAS ID = 4.5 A, VDD = 50 V, RGS = 25 ? L = 29 mH, Tj = 25 C 320 Gate source voltage VGS 20 V Power dissipation Ptot W TC = 25 C 75 Operating temperature Tj -55 ... + 150 C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ? 1.67 K/W Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Semiconductor Group 1 07/96 BUZ 90 A Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter

1.2. buz90.pdf Size:176K _siemens

BUZ90
BUZ90
BUZ 90 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 90 600 V 4.5 A 1.6 ? TO-220 AB C67078-S1321-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 28 C 4.5 Pulsed drain current IDpuls TC = 25 C 18 Avalanche current,limited by Tjmax IAR 4.5 Avalanche energy,periodic limited by Tjmax EAR 8 mJ Avalanche energy, single pulse EAS ID = 4.5 A, VDD = 50 V, RGS = 25 ? L = 29 mH, Tj = 25 C 320 Gate source voltage VGS 20 V Power dissipation Ptot W TC = 25 C 75 Operating temperature Tj -55 ... + 150 C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ? 1.67 K/W Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Semiconductor Group 1 07/96 BUZ 90 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter

1.3. buz900dp_buz901dp.pdf Size:45K _magnatec

BUZ90
BUZ90
BUZ900DP MAGNA BUZ901DP TEC MECHANICAL DATA Dimensions in mm NCHANNEL POWER MOSFET 20.0 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 HIGH SPEED SWITCHING 2.0 1.0 NCHANNEL POWER MOSFET 2.0 SEMEFAB DESIGNED AND DIFFUSED 3.4 HIGH VOLTAGE (160V & 200V) HIGH ENERGY RATING 0.6 1.2 ENHANCEMENT MODE 2.8 INTEGRAL PROTECTION DIODE 5.45 5.45 PCHANNEL ALSO AVAILABLE AS TO3PBL BUZ905DP & BUZ906DP Pin 1 Gate Pin 2 Source Pin 3 Drain DOUBLE DIE PACKAGE FOR MAXIMUM Case is Source POWER AND HEATSINK SPACE ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) BUZ900DP BUZ901DP VDSX Drain Source Voltage 160V 200V VGSS Gate Source Voltage 14V ID Continuous Drain Current 16A ID(PK) Body Drain Diode 16A PD Total Power Dissipation @ Tcase = 25C 250W Tstg Storage Temperature Range 55 to 150C Tj Maximum Operating Junction Temperature 150C R?JC Thermal Resistance Junction Case 0.5C/W Prelim. 2/95

1.4. buz900d_buz901d.pdf Size:44K _magnatec

BUZ90
BUZ90
BUZ900D MAGNA BUZ901D TEC MECHANICAL DATA Dimensions in mm N–CHANNEL POWER MOSFET +0.1 25.0 -0.15 8.7 Max. 10.90 ± 0.1 1.50 11.60 POWER MOSFETS FOR Typ. ± 0.3 AUDIO APPLICATIONS FEATURES 1 2 • HIGH SPEED SWITCHING • N–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) R 4.0 ± 0.1 R 4.4 ± 0.2 • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE TO–3 • P–CHANNEL ALSO AVAILABLE AS Pin 1 – Gate Pin 2 – Drain Case – Source BUZ905D & BUZ906D • DOUBLE DIE PACKAGE FOR MAXIMUM POWER AND HEATSINK SPACE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ900D BUZ901D VDSX Drain – Source Voltage 160V 200V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current 16A ID(PK) Body Drain Diode 16A PD Total Power Dissipation @ Tcase = 25°C 250W Tstg Storage Temperature Range –55 to 150°C Tj Maximum Operating Junction Temperature 150°C RθJC Thermal R

1.5. buz900p_buz901p.pdf Size:42K _magnatec

BUZ90
BUZ90
BUZ900P MAGNA BUZ901P TEC MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET 4.69 (0.185) 15.49 (0.610) 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) POWER MOSFETS FOR AUDIO APPLICATIONS 3.55 (0.140) 3.81 (0.150) FEATURES 1 2 3 • HIGH SPEED SWITCHING 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) • N–CHANNEL POWER MOSFET 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) • SEMEFAB DESIGNED AND DIFFUSED 1.01 (0.040) • HIGH VOLTAGE (160V & 200V) 1.40 (0.055) • HIGH ENERGY RATING 2.21 (0.087) 2.59 (0.102) 5.25 (0.215) • ENHANCEMENT MODE BSC • INTEGRAL PROTECTION DIODE TO–247 • P–CHANNEL ALSO AVAILABLE AS Pin 1 – Gate Pin 2 – Source Pin 3 – Drain BUZ905P & BUZ906P ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ900P BUZ901P VDSX Drain – Source Voltage 160V 200V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current 8A ID(PK) Body Drain Diode 8A PD Total Power Dissipation @ Tcase =

1.6. buz907d_buz908d.pdf Size:28K _magnatec

BUZ90
BUZ90
BUZ907D MAGNA BUZ908D TEC MECHANICAL DATA Dimensions in mm P–CHANNEL POWER MOSFET +0.1 25.0 -0.15 8.7 Max. 10.90 ± 0.1 1.50 11.60 POWER MOSFETS FOR Typ. ± 0.3 AUDIO APPLICATIONS FEATURES 1 2 • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING R 4.0 ± 0.1 R 4.4 ± 0.2 • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY N–CHANNEL TO–3 BUZ902D & BUZ903D Pin 1 – Gate Pin 2 – Drain Case – Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ907D BUZ908D VDSX Drain – Source Voltage -220V -250V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current -16A ID(PK) Body Drain Diode -16A PD Total Power Dissipation @ Tcase = 25°C 250W Tstg Storage Temperature Range –55 to 150°C Tj Maximum Operating Junction Temperature 150°C RθJC Thermal Resistance Junction – Case 0.5°C/W Prelim. 01/97 Magnatec. Telephone (01455) 554711. F

1.7. buz900_buz901.pdf Size:63K _magnatec

BUZ90
BUZ90
BUZ900 www.DataSheet4U.com MAGNA BUZ901 TEC MECHANICAL DATA Dimensions in mm N–CHANNEL POWER MOSFET +0.1 25.0 -0.15 8.7 Max. 10.90 ± 0.1 1.50 11.60 POWER MOSFETS FOR Typ. ± 0.3 AUDIO APPLICATIONS FEATURES 1 2 • HIGH SPEED SWITCHING • N–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) R 4.0 ± 0.1 R 4.4 ± 0.2 • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE TO–3 • P–CHANNEL ALSO AVAILABLE AS Pin 1 – Gate Pin 2 – Drain Case – Source BUZ905 & BUZ906 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ900 BUZ901 VDSX Drain – Source Voltage 160V 200V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current 8A ID(PK) Body Drain Diode 8A PD Total Power Dissipation @ Tcase = 25°C 125W Tstg Storage Temperature Range –55 to 150°C Tj Maximum Operating Junction Temperature 150°C RθJC Thermal Resistance Junction – Case 1°C/W Prelim. 10/94

1.8. buz907p_buz908p.pdf Size:26K _magnatec

BUZ90
BUZ90
BUZ907P MAGNA BUZ908P TEC MECHANICAL DATA Dimensions in mm P–CHANNEL 4.69 (0.185) 15.49 (0.610) POWER MOSFET 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) POWER MOSFETS FOR AUDIO APPLICATIONS 3.55 (0.140) 3.81 (0.150) FEATURES 1 2 3 • HIGH SPEED SWITCHING 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) • SEMEFAB DESIGNED AND DIFFUSED 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) • HIGH VOLTAGE (220V & 250V) 1.01 (0.040) • HIGH ENERGY RATING 1.40 (0.055) • ENHANCEMENT MODE 2.21 (0.087) 2.59 (0.102) • INTEGRAL PROTECTION DIODES 5.25 (0.215) BSC • COMPLIMENTARY N–CHANNEL TO-247 BUZ902P & BUZ903P Pin 1 – Gate Pin 3 – Drain Pin 2 – Source Case– Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ907P BUZ908P VDSX Drain – Source Voltage -220V -250V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current -8A ID(PK) Body Drain Diode -8A PD Total Power Dissipation @ Tcase = 25°C 125W Tstg Stor

1.9. buz905x4s_buz906x4s.pdf Size:35K _magnatec

BUZ90
BUZ90
BUZ905X4S MAGNA BUZ906X4S TEC NEW PRODUCT UNDER DEVELOPMENT MECHANICAL DATA Dimensions in mm (inches) P–CHANNEL POWER MOSFET 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) 31.7 (1.248) POWER MOSFETS FOR 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) (4 places) AUDIO APPLICATIONS 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) R 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) FEATURES 4 3 • HIGH SPEED SWITCHING 3.3 (0.129) 5.1 (0.201) 4.0 (0.157) 3.6 (0.143) 5.9 (0.232) R = (2 Places) • P–CHANNEL POWER MOSFET 14.9 (0.587) 1.95 (0.077) 15.1 (0.594) 2.14 (0.084) 30.1 (1.185) • SEMEFAB DESIGNED AND DIFFUSED 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE SOT227 • INTEGRAL PROTECTION DIODE Pin 1 – Drain Pin 2 – Source • N–CHANNEL ALSO AVAILABLE Pin 3 – Gate Pin 4 – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C

1.10. buz902_buz903.pdf Size:50K _magnatec

BUZ90
BUZ90
BUZ902 MAGNA BUZ903 TEC MECHANICAL DATA Dimensions in mm N–CHANNEL POWER MOSFET +0.1 25.0 -0.15 8.7 Max. 10.90 ± 0.1 1.50 11.60 POWER MOSFETS FOR Typ. ± 0.3 AUDIO APPLICATIONS FEATURES 1 2 • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING R 4.0 ± 0.1 R 4.4 ± 0.2 • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY P–CHANNEL TO–3 BUZ907 & BUZ908 Pin 1 – Gate Pin 2 – Drain Case – Source www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ902 BUZ903 VDSX Drain – Source Voltage 220V 250V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current 8A ID(PK) Body Drain Diode 8A PD Total Power Dissipation @ Tcase = 25°C 125W Tstg Storage Temperature Range –55 to 150°C Tj Maximum Operating Junction Temperature 150°C RθJC Thermal Resistance Junction – Case 1°C/W Prelim. 01/97 Magnatec. Telephone (01455) 55

1.11. buz902d_buz903d.pdf Size:50K _magnatec

BUZ90
BUZ90
BUZ902D MAGNA BUZ903D TEC MECHANICAL DATA Dimensions in mm N–CHANNEL POWER MOSFET +0.1 25.0 -0.15 8.7 Max. 10.90 ± 0.1 1.50 11.60 POWER MOSFETS FOR Typ. ± 0.3 AUDIO APPLICATIONS FEATURES 1 2 • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING R 4.0 ± 0.1 R 4.4 ± 0.2 • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY P–CHANNEL TO–3 BUZ907D & BUZ908D Pin 1 – Gate Pin 2 – Drain Case – Source www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ902D BUZ903D VDSX Drain – Source Voltage 220V 250V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current 16A ID(PK) Body Drain Diode 16A PD Total Power Dissipation @ Tcase = 25°C 250W Tstg Storage Temperature Range –55 to 150°C Tj Maximum Operating Junction Temperature 150°C RθJC Thermal Resistance Junction – Case 0.5°C/W Prelim. 01/97 Magnatec. Telephone

1.12. buz905dp_buz906dp.pdf Size:43K _magnatec

BUZ90
BUZ90
BUZ905DP MAGNA BUZ906DP TEC MECHANICAL DATA Dimensions in mm P–CHANNEL POWER MOSFET 20.0 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 • HIGH SPEED SWITCHING 2.0 1.0 • P–CHANNEL POWER MOSFET 2.0 • SEMEFAB DESIGNED AND DIFFUSED 3.4 • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING 0.6 1.2 • ENHANCEMENT MODE 2.8 • INTEGRAL PROTECTION DIODE 5.45 5.45 • N–CHANNEL ALSO AVAILABLE AS TO–3PBL BUZ900DP & BUZ901DP Pin 1 – Gate Pin 2 – Source Pin 3 – Drain • DOUBLE DIE PACKAGE FOR MAXIMUM Case is Source POWER AND HEATSINK SPACE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ905DP BUZ906DP VDSX Drain – Source Voltage -160V -200V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current -16A ID(PK) Body Drain Diode -16A PD Total Power Dissipation @ Tcase = 25°C 250W Tstg Storage Temperature Range –55 to 150°C Tj Maximum Operating Junction Temperature 150°C RθJC Thermal

1.13. buz905d_buz906d.pdf Size:44K _magnatec

BUZ90
BUZ90
BUZ905D MAGNA BUZ906D TEC MECHANICAL DATA Dimensions in mm P–CHANNEL POWER MOSFET +0.1 25.0 -0.15 8.7 Max. 10.90 ± 0.1 1.50 11.60 POWER MOSFETS FOR Typ. ± 0.3 AUDIO APPLICATIONS FEATURES 1 2 • HIGH SPEED SWITCHING • P–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) R 4.0 ± 0.1 R 4.4 ± 0.2 • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE TO–3 • N–CHANNEL ALSO AVAILABLE AS Pin 1 – Gate Pin 2 – Drain Case – Source BUZ900D & BUZ901D • DOUBLE DIE PACKAGE FOR MAXIMUM POWER AND HEATSINK SPACE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ905D BUZ906D VDSX Drain – Source Voltage -160V -200V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current -16A ID(PK) Body Drain Diode -16A PD Total Power Dissipation @ Tcase = 25°C 250W Tstg Storage Temperature Range –55 to 150°C Tj Maximum Operating Junction Temperature 150°C RθJC Therm

1.14. buz907dp_buz908dp.pdf Size:26K _magnatec

BUZ90
BUZ90
BUZ907DP MAGNA BUZ908DP TEC MECHANICAL DATA Dimensions in mm P–CHANNEL POWER MOSFET 20.0 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 • HIGH SPEED SWITCHING 2.0 1.0 2.0 • SEMEFAB DESIGNED AND DIFFUSED 3.4 • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING 0.6 1.2 • ENHANCEMENT MODE 2.8 • INTEGRAL PROTECTION DIODES 5.45 5.45 • COMPLIMENTARY N–CHANNEL TO-3PBL BUZ902DP & BUZ903DP Pin 3 – Drain Pin 1 – Gate Pin 2 – Source Case – Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ907DP BUZ908DP VDSX Drain – Source Voltage -220V -250V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current -16A ID(PK) Body Drain Diode -16A PD Total Power Dissipation @ Tcase = 25°C 250W Tstg Storage Temperature Range –55 to 150°C Tj Maximum Operating Junction Temperature 150°C RθJC Thermal Resistance Junction – Case 0.5°C/W Prelim. 01/97 Magnatec. Telephone (01455) 554711. Fa

1.15. buz907_buz908.pdf Size:25K _magnatec

BUZ90
BUZ90
BUZ907 MAGNA BUZ908 TEC MECHANICAL DATA Dimensions in mm PCHANNEL POWER MOSFET +0.1 25.0 -0.15 8.7 Max. 10.90 0.1 1.50 11.60 POWER MOSFETS FOR Typ. 0.3 AUDIO APPLICATIONS FEATURES 1 2 HIGH SPEED SWITCHING SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (220V & 250V) HIGH ENERGY RATING R 4.0 0.1 R 4.4 0.2 ENHANCEMENT MODE INTEGRAL PROTECTION DIODES COMPLIMENTARY NCHANNEL TO3 BUZ902 & BUZ903 Pin 1 Gate Pin 2 Drain Case Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) BUZ907 BUZ908 VDSX Drain Source Voltage -220V -250V VGSS Gate Source Voltage 14V ID Continuous Drain Current -8A ID(PK) Body Drain Diode -8A PD Total Power Dissipation @ Tcase = 25C 125W Tstg Storage Temperature Range 55 to 150C Tj Maximum Operating Junction Temperature 150C R?JC Thermal Resistance Junction Case 1C/W Prelim. 01/97 Magnatec. Telephone (01455) 554711. Fax (01455) 558843 39.0 1.1 O 20 Max. 30.2 0.15 O 1

1.16. buz905p_buz906p.pdf Size:40K _magnatec

BUZ90
BUZ90
BUZ905P MAGNA BUZ906P TEC MECHANICAL DATA Dimensions in mm (inches) P–CHANNEL POWER MOSFET 4.69 (0.185) 15.49 (0.610) 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) POWER MOSFETS FOR AUDIO APPLICATIONS 3.55 (0.140) 3.81 (0.150) FEATURES 1 2 3 • HIGH SPEED SWITCHING 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) • P–CHANNEL POWER MOSFET 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) • SEMEFAB DESIGNED AND DIFFUSED 1.01 (0.040) • HIGH VOLTAGE (160V & 200V) 1.40 (0.055) • HIGH ENERGY RATING 2.21 (0.087) 2.59 (0.102) 5.25 (0.215) • ENHANCEMENT MODE BSC • INTEGRAL PROTECTION DIODE TO–247 • N–CHANNEL ALSO AVAILABLE AS Pin 1 – Gate Pin 2 – Source Pin 3 – Drain BUZ900P & BUZ901P ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ905P BUZ906P VDSX Drain – Source Voltage -160V -200V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current -8A ID(PK) Body Drain Diode -8A PD Total Power Dissipation @ Tc

1.17. buz902dp_buz903dp.pdf Size:26K _magnatec

BUZ90
BUZ90
BUZ902DP MAGNA BUZ903DP TEC MECHANICAL DATA Dimensions in mm N–CHANNEL POWER MOSFET 20.0 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 • HIGH SPEED SWITCHING 2.0 1.0 2.0 • SEMEFAB DESIGNED AND DIFFUSED 3.4 • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING 0.6 1.2 • ENHANCEMENT MODE 2.8 • INTEGRAL PROTECTION DIODES 5.45 5.45 • COMPLIMENTARY P–CHANNEL TO-3PBL BUZ907DP & BUZ908DP Pin 3 – Drain Pin 1 – Gate Pin 2 – Source Case – Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ902DP BUZ903DP VDSX Drain – Source Voltage 220V 250V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current 16A ID(PK) Body Drain Diode 16A PD Total Power Dissipation @ Tcase = 25°C 250W Tstg Storage Temperature Range –55 to 150°C Tj Maximum Operating Junction Temperature 150°C RθJC Thermal Resistance Junction – Case 0.5°C/W Prelim. 01/97 Magnatec. Telephone (01455) 554711. Fax (0

1.18. buz902p_buz903p.pdf Size:24K _magnatec

BUZ90
BUZ90
BUZ902P MAGNA BUZ903P TEC MECHANICAL DATA Dimensions in mm NCHANNEL 4.69 (0.185) 15.49 (0.610) POWER MOSFET 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) POWER MOSFETS FOR AUDIO APPLICATIONS 3.55 (0.140) 3.81 (0.150) FEATURES 1 2 3 HIGH SPEED SWITCHING 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) SEMEFAB DESIGNED AND DIFFUSED 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) HIGH VOLTAGE (220V & 250V) 1.01 (0.040) HIGH ENERGY RATING 1.40 (0.055) ENHANCEMENT MODE 2.21 (0.087) 2.59 (0.102) INTEGRAL PROTECTION DIODES 5.25 (0.215) BSC COMPLIMENTARY PCHANNEL TO-247 BUZ907P & BUZ908P Pin 1 Gate Pin 2 Source Pin 3 Drain Case Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) BUZ902P BUZ903P VDSX Drain Source Voltage 220V 250V VGSS Gate Source Voltage 14V ID Continuous Drain Current 8A ID(PK) Body Drain Diode 8A PD Total Power Dissipation @ Tcase = 25C 125W Tstg Storage Temperature Range 55 to 150C Tj M

1.19. buz900x4s_buz901x4s.pdf Size:35K _magnatec

BUZ90
BUZ90
BUZ900X4S MAGNA BUZ901X4S TEC NEW PRODUCT UNDER DEVELOPMENT MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) 31.7 (1.248) POWER MOSFETS FOR 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) (4 places) AUDIO APPLICATIONS 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) R 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) FEATURES 4 3 • HIGH SPEED SWITCHING 3.3 (0.129) 5.1 (0.201) 4.0 (0.157) 3.6 (0.143) 5.9 (0.232) R = (2 Places) • N–CHANNEL POWER MOSFET 14.9 (0.587) 1.95 (0.077) 15.1 (0.594) 2.14 (0.084) 30.1 (1.185) • SEMEFAB DESIGNED AND DIFFUSED 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE SOT227 • INTEGRAL PROTECTION DIODE Pin 1 – Drain Pin 2 – Source • P–CHANNEL ALSO AVAILABLE Pin 3 – Gate Pin 4 – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C

1.20. buz905-06.pdf Size:40K _magnatec

BUZ90
BUZ90
BUZ905 MAGNA BUZ906 TEC MECHANICAL DATA Dimensions in mm P–CHANNEL POWER MOSFET +0.1 25.0 -0.15 8.7 Max. 10.90 ± 0.1 1.50 11.60 POWER MOSFETS FOR Typ. ± 0.3 AUDIO APPLICATIONS FEATURES 1 2 • HIGH SPEED SWITCHING • P–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) R 4.0 ± 0.1 R 4.4 ± 0.2 • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE TO–3 • N–CHANNEL ALSO AVAILABLE AS Pin 1 – Gate Pin 2 – Drain Case – Source BUZ900 & BUZ901 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ905 BUZ906 VDSX Drain – Source Voltage -160V -200V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current -8A ID(PK) Body Drain Diode -8A PD Total Power Dissipation @ Tcase = 25°C 125W Tstg Storage Temperature Range –55 to 150°C Tj Maximum Operating Junction Temperature 150°C RθJC Thermal Resistance Junction – Case 1.0°C/W Prelim. 10/94 Magnatec. Tel

See also transistors datasheet: BUZ74 , BUZ74A , BUZ76 , BUZ76A , BUZ80 , BUZ80A , BUZ80AFI , BUZ80FI , IRFZ24N , BUZ900 , BUZ900D , BUZ900DP , BUZ900P , BUZ900X4S , BUZ901 , BUZ901D , BUZ901DP .

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 BUZ90 RoHS Compliant BUZ90 Service BUZ90 Triacs BUZ90 Semiconductor
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