MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
BUZ90
  BUZ90
  BUZ90
 
BUZ90
  BUZ90
  BUZ90
 
BUZ90
  BUZ90
 
 
List
10N30 ..2N5949
2N5950 ..2N6965
2N6966 ..2SJ133
2SJ134 ..2SJ554
2SJ555 ..2SK1522
2SK1526 ..2SK216
2SK2161 ..2SK2771-01R
2SK2776 ..2SK3147L
2SK3147S ..2SK368
2SK3683-01MR ..2SK531
2SK532 ..3N65K
3N65Z ..6N10
6N40 ..AP1203AGMT-HF
AP1332GEU-HF ..AP30N30WI
AP30P10GH-HF ..AP4563GH-HF
AP4563GM ..AP92U03GMT-HF
AP92U03GP-HF ..AP9922GEO-HF
AP9923GEO-HF ..APT10M19SVR
APT10M25BVFR ..AUIRF3305
AUIRF3415 ..AUIRLR3410
AUIRLR3636 ..BLF147
BLF175 ..BS270
BS870 ..BSP92P
BSR315P ..BUK653R2-55C
BUK653R3-30C ..BUK9213-30A
BUK9214-30A ..BUZ50A
BUZ50A-220M ..CED20P06
CED20P10 ..CEP02N6G
CEP02N7G ..CPH3351
CPH3355 ..DMP2104V
DMP210DUDJ ..FCPF7N60NT
FCPF9N60NT ..FDD18N20LZ
FDD20AN06A0_F085 ..FDMA3023PZ
FDMA3028N ..FDMS86105
FDMS86200 ..FDPF5N60NZ
FDPF680N10T ..FDS8978
FDS8978 ..FQB25N33TM_F085
FQB27P06 ..FQP9N90C
FQP9P25 ..FRM130D
FRM130H ..GWM160-0055X1-SL
GWM160-0055X1-SMD ..HAT1047R
HAT1047RJ ..HEPF2007A
HIRF630 ..IPA057N08N3G
IPA075N15N3G ..IPB80N04S3-03
IPB80N04S3-04 ..IPI100P03P3L-04
IPI110N20N3G ..IPP60R250CP
IPP60R280C6 ..IRF1010Z
IRF1010ZL ..IRF610S
IRF611 ..IRF7328
IRF7329 ..IRF840S
IRF841 ..IRFBL12N50A
IRFD014 ..IRFL110
IRFL210 ..IRFPG30
IRFPG40 ..IRFS520
IRFS520A ..IRFU310
IRFU310A ..IRL3705ZL
IRL3705ZS ..IRLR8729
IRLR8743 ..IXFE48N50Q
IXFE48N50QD2 ..IXFK240N15T2
IXFK24N100 ..IXFN48N60P
IXFN50N50 ..IXFT70N20Q3
IXFT74N20 ..IXTA15P15T
IXTA160N04T2 ..IXTH220N075T
IXTH22N50P ..IXTN90P20P
IXTP01N100D ..IXTQ40N50Q
IXTQ42N25P ..IXTZ35N25MB
IXTZ42N20MA ..KMA2D7DP20X
KMA2D8P20X ..KTK5132S
KTK5132U ..NDB4060
NDB4060L ..NTD4855N
NTD4856N ..NTUD3127C
NTUD3169CZ ..PHX7N60E
PHX8N50E ..PSMN2R7-30PL
PSMN2R8-40PS ..RFD7N10LESM
RFD8P05 ..RJK1052DPB
RJK1053DPB ..RSD175N10
RSD200N05 ..SDF3N90
SDF40N50JAM ..SGSP321
SGSP322 ..SML1004RGN
SML1004RKN ..SMN03T80IS
SMN0470F ..SSD15N10
SSD20N06-90D ..SSM3J09FU
SSM3J108TU ..SSM6N04FU
SSM6N05FU ..STB14NM50N
STB150NF04 ..STD38NH02L
STD3LN62K3 ..STF35N65M5
STF3LN62K3 ..STL60N3LLH5
STL65DN3LLH5 ..STP38N06
STP3LN62K3 ..STP9NK70Z
STP9NK70ZFP ..STW45NM60D
STW47NM60ND ..TK3A60DA
TK3A65D ..TPC8109
TPC8110 ..TPCP8301
TPCP8302 ..WTD9435
WTD9575 ..ZXMP2120FF
ZXMP2120G4 ..ZXMS6006SG
 
BUZ90 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

BUZ90 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: BUZ90

Type of BUZ90 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 75

Maximum drain-source voltage |Uds|, V: 600

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 4.5

Maximum junction temperature (Tj), °C: 150

Rise Time of BUZ90 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 1050

Maximum drain-source on-state resistance (Rds), Ohm: 1.6

Package: TO220AB

Equivalent transistors for BUZ90

BUZ90 PDF doc:

1.1. buz90a.pdf Size:175K _siemens

BUZ90
BUZ90
BUZ 90 A SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 90 A 600 V 4 A 2 ? TO-220 AB C67078-S1321-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 30 °C 4 Pulsed drain current IDpuls TC = 25 °C 16 Avalanche current,limited by Tjmax IAR 4.5 Avalanche energy,periodic limited by Tjmax EAR 8 mJ Avalanche energy, single pulse EAS ID = 4.5 A, VDD = 50 V, RGS = 25 ? L = 29 mH, Tj = 25 °C 320 Gate source voltage VGS ± 20 V Power dissipation Ptot W TC = 25 °C 75 Operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ? 1.67 K/W Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Semiconductor Group 1 07/96 BUZ 90 A Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter

1.2. buz90.pdf Size:176K _siemens

BUZ90
BUZ90
BUZ 90 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 90 600 V 4.5 A 1.6 ? TO-220 AB C67078-S1321-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 28 °C 4.5 Pulsed drain current IDpuls TC = 25 °C 18 Avalanche current,limited by Tjmax IAR 4.5 Avalanche energy,periodic limited by Tjmax EAR 8 mJ Avalanche energy, single pulse EAS ID = 4.5 A, VDD = 50 V, RGS = 25 ? L = 29 mH, Tj = 25 °C 320 Gate source voltage VGS ± 20 V Power dissipation Ptot W TC = 25 °C 75 Operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ? 1.67 K/W Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Semiconductor Group 1 07/96 BUZ 90 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter

1.3. buz907_buz908.pdf Size:25K _magnatec

BUZ90
BUZ90
BUZ907 MAGNA BUZ908 TEC MECHANICAL DATA Dimensions in mm P–CHANNEL POWER MOSFET +0.1 25.0 -0.15 8.7 Max. 10.90 ± 0.1 1.50 11.60 POWER MOSFETS FOR Typ. ± 0.3 AUDIO APPLICATIONS FEATURES 1 2 • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING R 4.0 ± 0.1 R 4.4 ± 0.2 • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY N–CHANNEL TO–3 BUZ902 & BUZ903 Pin 1 – Gate Pin 2 – Drain Case – Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ907 BUZ908 VDSX Drain – Source Voltage -220V -250V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current -8A ID(PK) Body Drain Diode -8A PD Total Power Dissipation @ Tcase = 25°C 125W Tstg Storage Temperature Range –55 to 150°C Tj Maximum Operating Junction Temperature 150°C R?JC Thermal Resistance Junction – Case 1°C/W Prelim. 01/97 Magnatec. Telephone (01455) 554711. Fax (01455) 558843 39.0 ± 1.1 O 20 Max. 30.2 ± 0.15 O 1

1.4. buz900dp_buz901dp.pdf Size:45K _magnatec

BUZ90
BUZ90
BUZ900DP MAGNA BUZ901DP TEC MECHANICAL DATA Dimensions in mm N–CHANNEL POWER MOSFET 20.0 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 • HIGH SPEED SWITCHING 2.0 1.0 • N–CHANNEL POWER MOSFET 2.0 • SEMEFAB DESIGNED AND DIFFUSED 3.4 • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING 0.6 1.2 • ENHANCEMENT MODE 2.8 • INTEGRAL PROTECTION DIODE 5.45 5.45 • P–CHANNEL ALSO AVAILABLE AS TO–3PBL BUZ905DP & BUZ906DP Pin 1 – Gate Pin 2 – Source Pin 3 – Drain • DOUBLE DIE PACKAGE FOR MAXIMUM Case is Source POWER AND HEATSINK SPACE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ900DP BUZ901DP VDSX Drain – Source Voltage 160V 200V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current 16A ID(PK) Body Drain Diode 16A PD Total Power Dissipation @ Tcase = 25°C 250W Tstg Storage Temperature Range –55 to 150°C Tj Maximum Operating Junction Temperature 150°C R?JC Thermal Resistance Junction – Case 0.5°C/W Prelim. 2/95

1.5. buz902p_buz903p.pdf Size:24K _magnatec

BUZ90
BUZ90
BUZ902P MAGNA BUZ903P TEC MECHANICAL DATA Dimensions in mm N–CHANNEL 4.69 (0.185) 15.49 (0.610) POWER MOSFET 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) POWER MOSFETS FOR AUDIO APPLICATIONS 3.55 (0.140) 3.81 (0.150) FEATURES 1 2 3 • HIGH SPEED SWITCHING 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) • SEMEFAB DESIGNED AND DIFFUSED 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) • HIGH VOLTAGE (220V & 250V) 1.01 (0.040) • HIGH ENERGY RATING 1.40 (0.055) • ENHANCEMENT MODE 2.21 (0.087) 2.59 (0.102) • INTEGRAL PROTECTION DIODES 5.25 (0.215) BSC • COMPLIMENTARY P–CHANNEL TO-247 BUZ907P & BUZ908P Pin 1 – Gate Pin 2 – Source Pin 3 – Drain Case – Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ902P BUZ903P VDSX Drain – Source Voltage 220V 250V VGSS Gate – Source Voltage ±14V ID Continuous Drain Current 8A ID(PK) Body Drain Diode 8A PD Total Power Dissipation @ Tcase = 25°C 125W Tstg Storage Temperature Range –55 to 150°C Tj M

See also transistors datasheet: BUZ74 , BUZ74A , BUZ76 , BUZ76A , BUZ80 , BUZ80A , BUZ80AFI , BUZ80FI , IRFZ24N , BUZ900 , BUZ900D , BUZ900DP , BUZ900P , BUZ900X4S , BUZ901 , BUZ901D , BUZ901DP .

Keywords

 BUZ90 Datasheet  BUZ90 Datenblatt  BUZ90 RoHS  BUZ90 Distributor
 BUZ90 Application Notes  BUZ90 Component  BUZ90 Circuit  BUZ90 Schematic
 BUZ90 Equivalent  BUZ90 Cross Reference  BUZ90 Data Sheet  BUZ90 Fiche Technique

(C) 2005 All Right reserved Bipolar || MOSFET || IGBT | | Manufacturer Sites || SMD Code || Packages