2SK1058 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1058
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 100 W
Maximum Drain-Source Voltage |Vds|: 160 V
Maximum Gate-Source Voltage |Vgs|: 15 V
Minimum Gate-to-Source Cutoff Voltage |Vgs(off)|: 0.15 V
Maximum Drain Current |Id|: 7 A
Maximum Junction Temperature (Tj): 150 °C
Drain-Source Capacitance (Cd): 350 pF
Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm
Package: TO3P
2SK1058 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1058 Datasheet (PDF)
rej03g0906 2sk1056 2sk1057 2sk1058.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk1056 2sk1057 2sk1058.pdf
2SK1056, 2SK1057, 2SK1058Silicon N-Channel MOS FETApplicationLow frequency power amplifierComplementary pair with 2SJ160, 2SJ161 and 2SJ162Features Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier
2sk1057 2sk1058.pdf
To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
2sk104 2sk105 2sk162 2sk163 2sk193 2sk195 2sk505 2sk507 2sk514 2sk518 2sk519 2sk523 2sk533 2sk660 2sk997 2sk998 2sk1000 2sk1109.pdf
2sk1053.pdf
Ordering number:EN3440N-Channel Silicon MOSFET2SK1053Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-state resistance.unit:mm Ultrahigh-speed switching.2052C[2SK1053]10.24.53.65.11.31.21 : Gate0.80.42 : Drain1 2 33 : SourceEIAJ : SC-462.55 2.55SANYO : TO-220ABSpecificationsAbsolute Maximum Ratings at Ta = 25C
2sk1052.pdf
Ordering number:EN3439N-Channel Silicon MOSFET2SK1052Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-state resistance.unit:mm Ultrahigh-speed switching.2052C[2SK1052]10.24.53.65.11.31.21 : Gate0.80.42 : Drain1 2 33 : SourceEIAJ : SC-462.55 2.55SANYO : TO-220ABSpecificationsAbsolute Maximum Ratings at Ta = 25C
2sk17 2sk40 2sk59 2sk105 ifn17 ifn40 ifn59 ifn105.pdf
Databook.fxp 1/14/99 2:03 PM Page D-2D-2 01/99Japanese Equivalent JFET TypesSilicon Junction Field-Effect Transistors2SK17 2SK40 2SK59 2SK105JapaneseIFN17 IFN40 IFN59 IFN105InterFETNJ16 NJ16 NJ16 NJ16ProcessUnit N N N NParameters Conditions Limit Channel Channel Channel ChannelVBVGSS IG = 1.0 A 20 50 30 50MinnA 0.10 1.0 1.0 1.0IGSS VGS = ( )
2sk1053.pdf
isc N-Channel MOSFET Transistor 2SK1053DESCRIPTIONDrain Current I =1A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and rela
2sk1052.pdf
isc N-Channel MOSFET Transistor 2SK1052DESCRIPTIONDrain Current I =0.5A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and re
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , IRFP250 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
