2SJ161 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2SJ161

Type of 2SJ161 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 100

Maximum drain-source voltage |Uds|, V: 140V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 7

Maximum junction temperature (Tj), °C:

Rise Time of 2SJ161 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm:

Package: TO3P

Equivalent transistors for 2SJ161

2SJ161 PDF documents for downloads:

1.1. rej03g0847_2sj160_2sj161_2sj162.pdf Size:83K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular

1.2. 2sj160_2sj161_2sj162.pdf Size:38K _hitachi

2SJ160, 2SJ161, 2SJ162 Silicon P-Channel MOS FET ADE-208-1182 (Z) 1st. Edition Mar. 2001 Application Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 Features • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes • Suitable for audio power amplifier 2SJ160, 2SJ161, 2SJ162 Outline TO-3P D 1 G 2 3 1. Gate 2. Source (Flange) S 3. Drain Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage 2SJ160 VDSX –120 V 2SJ161 –140 2SJ162 –160 Gate to source voltage VGSS ±15 V Drain current ID –7 A Body to drain diode reverse drain current IDR –7 A Channel dissipation Pch*1 100 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at TC = 25°C 2 2SJ160, 2SJ161, 2SJ162 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit

5.1. 2sj167.pdf Size:294K _toshiba

2SJ167 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ167 High Speed Switching Applications Unit: mm Analog Switch Applications Interface Applications • Excellent switching time: ton = 14 ns (typ.) • High forward transfer admittance: |Y | = 100 mS (min) fs • Low on resistance: R = 1.3 ? (typ.) DS (ON) • Enhancement-mode • Complementary to 2SK1061 Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Drain-source voltage VDSS -60 V Gate-source voltage VGSS ±20 V DC ID -200 Drain current mA Pulse IDP -800 JEDEC ? Drain power dissipation (Ta = 25°C) PD 300 mW JEITA ? Channel temperature Tch 150 °C TOSHIBA 2-4E1E Storage temperature range Tstg -55~150 °C Weight: 0.13 g (typ.) 1 2003-03-25 2SJ167 Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±10 V, VDS = 0 ? ? ±100 nA Drain cut-off current IDSS VDS = -60 V, VGS

5.2. 2sj168.pdf Size:330K _toshiba

2SJ168 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168 High Speed Switching Applications Unit: mm Analog Switch Applications Interface Applications • Excellent switching time: ton = 14 ns (typ.) • High forward transfer admittance: |Y | = 100 mS (min) fs @I = -50 mA D • Low on resistance: R = 1.3 ? (typ.) @ I = -50 mA DS (ON) D • Enhancement-mode • Complementary to 2SK1062 Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Drain-source voltage VDSS -60 V Gate-source voltage VGSS ±20 V DC ID -200 JEDEC ? Drain current mA Pulse IDP -800 JEITA SC-59 Drain power dissipation (Ta = 25°C) PD 200 mW TOSHIBA 2-3F1F Channel temperature Tch 150 °C Weight: 0.012 g (typ.) Storage temperature range Tstg -55~150 °C Note: This transistor is the electrostatic sensitive device. Please handle with caution. Marking 1 2003-03-27 2SJ168 Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Tes

5.3. 2sj165.pdf Size:384K _nec

5.4. 2sj166.pdf Size:350K _nec

5.5. 2sj163.pdf Size:29K _panasonic

Silicon Junction FETs (Small Signal) 2SJ163 2SJ163 Silicon P-Channel Junction Unit : mm For general use switching +0.2 2.8 –0.3 Complementary with 2SK1103 +0.25 0.65± 0.15 1.5 –0.05 0.65± 0.15 Features 1 Low ON-resistance Low-noise characteristics 3 2 Absolute Maximum Ratings (Ta = 25?C) Parameter Symbol Rating Unit 0.1 to 0.3 Gate-Drain voltage VGDS 65 V 0.4± 0.2 Drain current ID –20 mA Gate current IG –10 mA 1 : Source JEDEC : TO-236 Allowable power dissipation PD 150 mW 2 : Drain EIAJ : SC-59 Channel temperature Tch 150 ?C 3 : Gate Mini Type Package (3-pin) Storage temperature Tstg –55 to +150 ?C Electrical Characteristics (Ta = 25?C) Parameter Symbol Condition Min Typ Max Unit Drain-Source cut-off current IDSS * VDS=–10V, VGS= 0 – 0.2 – 6 mA Gate-Source leakage current IGSS VGS= 30V, VDS= 0 10 nA Gate-Drain voltage VGDS IG=10µA, VDS= 0 65 V Gate-Source cut-off voltage VGSC VDS= –10V, ID= –10µA 1.5 3.5 V Forward transadmittance | Yfs | VDS= –10V

5.6. 2sj164.pdf Size:27K _panasonic

Silicon Junction FETs (Small Signal) 2SJ164 2SJ164 Silicon P-Channel Junction Unit : mm For switching 4.0± 0.2 Complementary with 2SK1104 Features Low ON-resistance Low-noise characteristics marking 1 2 3 Absolute Maximum Ratings (Ta = 25?C) Parameter Symbol Rating Unit 1.27 1.27 1 : Source Gate-Drain voltage VGDS 65 V 2.54± 0.15 2 : Gate Drain current ID –20 mA 3 : Drain Gate current IG –10 mA New S Type Package Allowable power dissipation PD 300 mW Channel temperature Tch 150 ?C Storage temperature Tstg –55 to +150 ?C Electrical Characteristics (Ta = 25?C) Parameter Symbol Condition Min Typ Max Unit Drain-Source cut-off current IDSS * VDS= –10V, VGS= 0 – 0.2 – 6 mA Gate-Source leakage current IGSS VGS= 30V, VDS= 0 10 nA Gate-Drain voltage VGDS IG=10µA, VDS= 0 65 V Gate-Source cut-off voltage VGSC VDS= –10V, ID= –10µA 1.5 3.5 V Forward transadmittance | Yfs | VDS=–10V, ID=–1mA, f=1kHz 1.8 2.5 mS Drain-Source ON-resistance RDS(ON) VDS=–10mV, VGS= 0 3

See also transistors datasheet: 2SJ78 , 2SJ79 , 2SK1056 , 2SK1057 , 2SK1058 , 2SK2220 , 2SK2221 , 2SJ160 , IRFZ44V , 2SJ162 , 2SJ351 , 2SJ352 , RQA0011DNS , RQA0004PXDQS , RQA0005QXDQS , RQA0010VXDQS , RQA0008RXDQS .

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