EMH2411R MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: EMH2411R

Type of EMH2411R transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 1.3

Maximum drain-source voltage |Uds|, V: 30V

Maximum gate-source voltage |Ugs|, V: 12

Maximum drain current |Id|, A: 5

Maximum junction temperature (Tj), °C:

Rise Time of EMH2411R transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0365

Package: EMH8

Equivalent transistors for EMH2411R

EMH2411R PDF documents for downloads:

1.1. emh2411r.pdf Size:270K _sanyo

EMH2411R Ordering number : ENA1421 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device EMH2411R Applications Features • Low ON-resistance. • Best suited for LiB charging and discharging switch. • Common-drain type. • 2.5V drive. • Halogen free compliance. Specifications at Ta=25°C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±12 V Drain Current (DC) ID 5 A Drain Current (Pulse) IDP PW?10?s, duty cycle?1% 60 A Allowable Power Dissipation PD When mounted on ceramic substrate (900mm2?0.8mm) 1unit 1.3 W Total Dissipation PT When mounted on ceramic substrate (900mm2?0.8mm) 1.4 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 30 V Zero-Gate Voltage Drain Current IDSS VDS

4.1. emh2412.pdf Size:481K _sanyo

EMH2412 Ordering number : ENA1315 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device EMH2412 Applications Features • Low ON-resistance. • Best suited for LiB charging and discharging switch. • Common-drain type. • 2.5V drive. • Halogen free compliance. Specifications at Ta=25°C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 24 V Gate-to-Source Voltage VGSS ±12 V Drain Current (DC) ID 6 A Drain Current (Pulse) IDP PW?10?s, duty cycle?1% 60 A Allowable Power Dissipation PD When mounted on ceramic substrate (900mm2?0.8mm) 1unit 1.3 W Total Dissipation PT When mounted on ceramic substrate (900mm2?0.8mm) 1.4 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 24 V Zero-Gate Voltage Drain Current IDSS VDS=2

5.1. emh2409.pdf Size:346K _sanyo

EMH2409 Ordering number : ENA1890 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device EMH2409 Applications Features • The EMH2409 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting • 4V drive • Halogen free compliance Specifications at Ta=25°C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID 4 A Drain Current (Pulse) IDP PW?10?s, duty cycle?1% 16 A Allowable Power Dissipation PD When mounted on ceramic substrate (900mm2?0.8mm) 1unit 1.0 W Total Dissipation PT When mounted on ceramic substrate (900mm2?0.8mm) 1.2 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Package Dimensions Product & Package Information unit : mm (typ) • Package : EMH8 7045-002 • JEITA, JEDEC : - • Minimum Packing Quantity : 3,000 pcs./r

5.2. emh2408.pdf Size:307K _sanyo

Ordering number : ENA1170 EMH2408 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device EMH2408 Applications Features • The EMH2402 incorporates an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. • 1.8V drive. • Halogen free cpmpliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS ±12 V Drain Current (DC) ID 4 A Drain Current (Pulse) IDP PW?10?s, duty cycle?1% 16 A Allowable Power Dissipation PD When mounted on ceramic substrate (900mm2?0.8mm) 1unit 1.0 W Total Dissipation PT When mounted on ceramic substrate (900mm2?0.8mm) 1.2 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V

5.3. emh2407.pdf Size:306K _sanyo

Ordering number : ENA1141B EMH2407 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device EMH2407 Applications Features • Low ON-resistance. • Best suited for LiB charging and discharging switch. • Common-drain type. • 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS ±12 V Drain Current (DC) ID 6 A Drain Current (Pulse) IDP PW?10?s, duty cycle?1% 40 A Allowable Power Dissipation PD When mounted on ceramic substrate (900mm2?0.8mm) 1unit 1.3 W Total Dissipation PT When mounted on ceramic substrate (900mm2?0.8mm) 1.4 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 20 V Zero-Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 ?A Gate-to-Sourc

See also transistors datasheet: ECH8656 , ECH8671 , ECH8672 , ECH8674 , ECH8675 , EFC4612R , EFC4615R , EFC4618R-P , IRFP4468 , FSS294 , FTS2057 , FW216A , MCH3375 , MCH3376 , MCH3474 , MCH3476 , MCH3478 .

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