MOSFET Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
2SK2701A
  2SK2701A
  2SK2701A
  2SK2701A
 
2SK2701A
  2SK2701A
  2SK2701A
  2SK2701A
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553L
2SJ553S ..2SK1516
2SK1517 ..2SK2136
2SK2137 ..2SK2735
2SK2735L ..2SK3125
2SK3126 ..2SK357
2SK3582CT ..2SK4195LS
2SK4196LS ..3N159
3N161 ..40821
40822 ..AO4496
AO4498 ..AOC2423
AOC2800 ..AON2701
AON2705 ..AON7752
AON7754 ..AOU4N60
AOU4S60 ..AP13P15GP-HF
AP13P15GS-HF ..AP30T10GP-HF
AP30T10GS-HF ..AP4800AGM-HF
AP4800BGM-HF ..AP9408AGH
AP9408AGI ..AP9930AGM
AP9930GM-HF ..APT1004RGN
APT1004RKN ..APT50M50L2LL
APT50M50PVR ..AUIRF3710ZS
AUIRF3805 ..AUIRLR3915
AUIRLS3034 ..BLF202
BLF2043F ..BSB028N06NN3G
BSB053N03LPG ..BSS123
BSS123A ..BUK653R7-30C
BUK654R0-75C ..BUK9217-75B
BUK9219-55A ..BUZ50A-TO220M
BUZ50ASM ..CED20P10
CED21A2 ..CEP02N7G
CEP02N9 ..CPH3355
CPH3356 ..DMP210DUDJ
DMP210DUFB4 ..FCP9N60N
FCPF11N60 ..FDC642P_F085
FDC645N ..FDM3622
FDM47-06KC5 ..FDMS7608S
FDMS7620S ..FDP8860
FDP8870 ..FDS8926A
FDS8928A ..FQB1P50
FQB22P10 ..FQPF3N25
FQPF3N80C ..FRS240R
FRS244D ..H5N2008P
H5N2301PF ..HAT2080R
HAT2080T ..HUF75332S3S
HUF75333G3 ..IPB022N04LG
IPB023N04NG ..IPD14N06S2-80
IPD15N06S2L-64 ..IPI80N04S3-06
IPI80N04S3-H4 ..IPP90R1K0C3
IPP90R1K2C3 ..IRF2807
IRF2807L ..IRF644
IRF644A ..IRF7450
IRF7451 ..IRF9533
IRF9540 ..IRFH3702
IRFH3707 ..IRFP140
IRFP1405 ..IRFR3411
IRFR3504Z ..IRFS750A
IRFS820 ..IRFW520A
IRFW530A ..IRL8113
IRL8113L ..IRLU3717
IRLU3802 ..IXFH16N120P
IXFH16N50P ..IXFK64N50Q3
IXFK64N60P ..IXFP8N50PM
IXFQ10N80P ..IXFV74N20PS
IXFV96N15P ..IXTA32P20T
IXTA36N30P ..IXTH41N25
IXTH420N04T2 ..IXTP1R4N120P
IXTP1R4N60P ..IXTT16N10D2
IXTT16N20D2 ..JFTJ105
K1109 ..KMB7D0DN40Q
KMB7D0DN40QA ..KU310N10P
KU390N10P ..MTB3D0N03ATH8
MTB40N06E3 ..MTN2510LE3
MTN2510LJ3 ..MTP6405N6
MTP658G6 ..NTD20N03L27
NTD20N06 ..NTR4501
NTR4502P ..PHT6N03LT
PHT6N06LT ..PSMN1R2-30YLC
PSMN1R3-30YL ..RF1S530SM
RF1S540SM ..RJK03E5DPA
RJK03E6DPA ..RQJ0602EGDQS
RQJ0603LGDQA ..SDF08N50
SDF08N60 ..SFP9Z34
SFR2955 ..SMG2306NE
SMG2310A ..SML40J93
SML40L57 ..SPA08N80C3
SPA11N60C3 ..SSDF9504
SSE110N03-03P ..SSM3J16TE
SSM3J304T ..SSM6P05FU
SSM6P09FU ..STB19NF20
STB200N4F3 ..STD3N25-1
STD3N25T4 ..STF26NM60N
STF28NM50N ..STK830P
STK900 ..STP14NK50Z
STP14NK60Z ..STP5N30LFI
STP5N50 ..STS4DNFS30L
STS4DPF20L ..STU616S
STU618S ..TF252TH
TF256 ..TK80S04K3L
TK80S06K3L ..TPCA8046-H
TPCA8047-H ..UP672
UP9971 ..WTC2305
WTC2305DS ..ZXMP10A16K
ZXMP10A17E6 ..ZXMS6006SG
 
2SK2701A All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

2SK2701A MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2SK2701A

Type of 2SK2701A transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 35

Maximum drain-source voltage |Uds|, V: 450

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 7

Maximum junction temperature (Tj), °C:

Rise Time of 2SK2701A transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 1.1

Package: TO220F(FM20)

Equivalent transistors for 2SK2701A - Cross-Reference Search

2SK2701A PDF doc:

1.1. 2sk2701a.pdf Size:206K _sanken-ele

2SK2701A
2SK2701A
2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings IGSS IDSS VTH VDSS VGSS ID ID (pulse) PD Part EAS Conditions Conditions Conditions Number (nA) VGS (A) VDS (V) VDS ID (mJ) (V) (V) (A) (A) (W) max (V) min max (V) min max (V) ( A) 2SK2420 60 20 30 120 40 38 100 20 100 60 2.0 4.0 10 250 2SK2701A 450 30 7 28 35 130 100 30 100 450 2.0 4.0 10 1m 2SK2778 100 20 12 48 30 70 100 20 100 100 1.0 2.0 10 250 2SK2779 100 20 20 80 35 200 100 20 100 100 1.0 2.0 10 250 2SK2803 450 30 3 12 30 30 100 30 100 450 2.0 4.0 10 1m 2SK2848 600 30 2 8 30 10 100 30 100 600 2.0 4.0 10 250 2SK2943 900 30 3 12 30 60 100 30 100 900 2.0 4.0 10 1m 2SK3003 200 20 18 72 35 120 100 20 100 200 2.0 4.0 10 1m 2SK3004 250 20 18 72 35 120 100 20 100 250 2.0 4.0 10 1m 2SK3199 500 30 5 20 30 35 100 30 100 500 2.0 4.0 10 1m 2SK3710A 60 20 70 140 90 468 10 15 100 60 2.0 4.0 10 1m 2SK3711 60 20 70 140 130 10 +15 100 60

4.1. 2sk2700.pdf Size:388K _toshiba

2SK2701A
2SK2701A
2SK2700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?MOSIII) 2SK2700 Chopper Regulator, DCDC Converter and Motor Drive Applications Unit: mm Low drainsource ON resistance : RDS = 3.7 ? (typ.) (ON) High forward transfer admittance : |Y | = 2.6 S (typ.) fs Low leakage current : I = 100 A (max) (V = 720 V) DSS DS Enhancementmode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS D Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drainsource voltage VDSS 900 V Draingate voltage (RGS = 20 k?) VDGR 900 V Gatesource voltage VGSS 30 V DC (Note 1) ID 3 A Drain current Pulse (Note 1) IDP 9 A Drain power dissipation (Tc = 25C) PD 40 W JEDEC ? Single pulse avalanche energy EAS 295 mJ (Note 2) JEITA SC-67 Avalanche current IAR 3 A TOSHIBA 2-10R1B Repetitive avalanche energy (Note 3) EAR 4 mJ Weight: 1.9 g (typ.) Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Thermal Characteristics Ch

5.1. 2sk2717.pdf Size:409K _toshiba

2SK2701A
2SK2701A
2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2717 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 2.3 ? (typ.) (ON) High forward transfer admittance : |Y | = 4.4 S (typ.) fs Low leakage current : I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS D Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 k?) VDGR 900 V Gate-source voltage VGSS 30 V DC (Note 1) ID 5 Drain current A Pulse (Note 1) IDP 15 Drain power dissipation (Tc = 25C) PD 45 W Single pulse avalanche energy EAS 595 mJ (Note 2) JEDEC ? Avalanche current IAR 5 A Repetitive avalanche energy (Note 3) EAR 4.5 mJ JEITA SC-67 Channel temperature Tch 150 C TOSHIBA 2-10R1B Storage temperature range Tstg -55~150 C Weight: 1.9 g (typ.) Thermal Characteristics Characteristics Symb

5.2. 2sk2733.pdf Size:413K _toshiba

2SK2701A
2SK2701A
2SK2733 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2733 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 8.0 ? (typ.) (ON) High forward transfer admittance : |Y | = 0.9 S (typ.) fs Low leakage current : I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS D Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 k?) VDGR 900 V Gate-source voltage VGSS 30 V DC (Note 1) ID 1 Drain current A Pulse (Note 1) IDP 3 Drain power dissipation (Tc = 25C) PD 60 W Single pulse avalanche energy EAS 324 mJ JEDEC TO-220AB (Note 2) Avalanche current IAR 1 A JEITA SC-46 Repetitive avalanche energy (Note 3) EAR 6.0 mJ TOSHIBA 2-10P1B Channel temperature Tch 150 C Weight: 2.0 g (typ.) Storage temperature range Tstg -55~150 C Thermal Characteristics

5.3. 2sk2789.pdf Size:428K _toshiba

2SK2701A
2SK2701A
2SK2789 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2789 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain-source ON resistance : R = 66 m? (typ.) DS (ON) High forward transfer admittance : |Y | = 16 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 100 V) DS Enhancement-mode : V = 0.8~2.0 V (V = 10 V, I = 1 mA) th DS D Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 100 V Drain-gate voltage (RGS = 20 k?) VDGR 100 V Gate-source voltage VGSS 20 V DC (Note 1) ID 27 A Drain current Pulse (Note 1) IDP 108 A Drain power dissipation (Tc = 25C) PD 60 W JEDEC ? Single pulse avalanche energy EAS 193 mJ (Note 2) JEITA ? Avalanche current IAR 27 A TOSHIBA 2-10S1B Repetitive avalanche energy (Note 3) EAR 6 mJ Weight: 1.5 g (typ.) Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Ther

5.4. 2sk2741.pdf Size:414K _toshiba

2SK2701A
2SK2701A
2SK2741 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2741 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.12 ? (typ.) DS (ON) High forward transfer admittance : |Y | = 5.0 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 60 V) DS Enhancement-mode : V = 0.8~2.0 V (V = 10 V, I = 1 mA) th DS D Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 60 V Drain-gate voltage (RGS = 20 k?) VDGR 60 V Gate-source voltage VGSS 20 V DC (Note 1) ID 5 Drain current A Pulse (Note 1) IDP 20 JEDEC ? Drain power dissipation (Note 2) PD 2.5 W JEITA ? Single pulse avalanche energy EAS 129 mJ (Note 3) TOSHIBA 2-7H1B Avalanche current IAR 5 A Weight: 0.12 g (typ.) Repetitive avalanche energy (Note 4) EAR 0.25 mJ Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Marking

5.5. 2sk2745.pdf Size:399K _toshiba

2SK2701A
2SK2701A
2SK2745 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2745 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 7.0 m? (typ.) DS (ON) High forward transfer admittance : |Y | = 50 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 50 V) DS Enhancement-mode : V = 0.8~2.0 V (V = 10 V, I = 1 mA) th DS D Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 50 V Drain-gate voltage (RGS = 20 k?) VDGR 50 V Gate-source voltage VGSS 20 V DC (Note 1) ID 50 A 1. GATE Drain current Pulse (Note 1) IDP 200 A 2. DRAIN (HEAT SINK) 3. SOURCE Drain power dissipation (Tc = 25C) PD 150 W Single pulse avalanche energy EAS 747 mJ JEDEC ? (Note 2) JEITA ? Avalanche current IAR 50 A Repetitive avalanche energy (Note 3) EAR 15 mJ TOSHIBA 2-16C1B Channel temperature Tch 150 C Weight: 4.6 g (typ.)

5.6. 2sk2750.pdf Size:393K _toshiba

2SK2701A
2SK2701A
2SK2750 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2750 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 1.7 ? (typ.) (ON) High forward transfer admittance : |Y | = 3.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 600 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS D Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k?) VDGR 600 V Gate-source voltage VGSS 30 V DC (Note 1) ID 3.5 A Drain current Pulse (Note 1) IDP 14 A Drain power dissipation (Tc = 25C) PD 35 W Single pulse avalanche energy EAS 201 mJ (Note 2) JEDEC Avalanche current IAR 3.5 A JEITA SC-67 Repetitive avalanche energy (Note 3) EAR 3.5 mJ TOSHIBA 2-10R1B Channel temperature Tch 150 C Weight: 1.9 g (typ.) Storage temperature range Tstg -55~150 C Thermal Characteristics

5.7. 2sk2749.pdf Size:412K _toshiba

2SK2701A
2SK2701A
2SK2749 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2749 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 1.6 ? (typ.) (ON) High forward transfer admittance : |Y | = 5.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS D Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 k?) VDGR 900 V Gate-source voltage VGSS 30 V DC (Note 1) ID 7 Drain current A Pulse (Note 1) IDP 21 1. GATE Drain power dissipation (Tc = 25C) PD 150 W 2. DRAIN (HEAT SINK) 3. SOURCE Single pulse avalanche energy EAS 682 mJ (Note 2) JEDEC ? Avalanche current IAR 7 A Repetitive avalanche energy (Note 3) EAR 15 mJ JEITA ? Channel temperature Tch 150 C TOSHIBA 2-16C1B Storage temperature range Tstg -55~150 C Weight

5.8. 2sk2746.pdf Size:420K _toshiba

2SK2701A
2SK2701A
2SK2746 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2746 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 1.3 ? (typ.) (ON) High forward transfer admittance : |Y | = 5.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 640 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS D Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 800 V Drain-gate voltage (RGS = 20 k?) VDGR 800 V Gate-source voltage VGSS 30 V DC (Note 1) ID 7 A Drain current Pulse (Note 1) IDP 21 A Drain power dissipation (Tc = 25C) PD 150 W 1. GATE 2. DRAIN (HEAT SINK) Single pulse avalanche energy EAS 673 mJ (Note 2) 3. SOURCE Avalanche current IAR 7 A JEDEC ? Repetitive avalanche energy (Note 3) EAR 15 mJ JEITA ? Channel temperature Tch 150 C TOSHIBA 2-16C1B Storage temperature range Tstg -55~150 C Weight: 4.6 g (typ.) T

5.9. 2sk2744.pdf Size:177K _toshiba

2SK2701A
2SK2701A

5.10. 2sk2782.pdf Size:418K _toshiba

2SK2701A
2SK2701A
2SK2782 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2782 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain-source ON resistance : R = 0.039 ? (typ.) DS (ON) High forward transfer admittance : |Y | = 11 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 60 V) DS Enhancement-mode : V = 0.8~2.0 V (V = 10 V, I = 1 mA) th DS D Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 60 V Drain-gate voltage (RGS = 20 k?) VDGR 60 V Gate-source voltage VGSS 20 V DC (Note 1) ID 20 A Drain current Pulse (Note 1) IDP 50 A Drain power dissipation (Tc = 25C) PD 40 W JEDEC ? Single pulse avalanche energy EAS 156 mJ (Note 2) JEITA SC-64 Avalanche current IAR 20 A TOSHIBA 2-7B5B Repetitive avalanche energy (Note 3) EAR 4 mJ Weight: 0.36 g (typ.) Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Th

5.11. 2sk2742.pdf Size:418K _toshiba

2SK2701A
2SK2701A
2SK2742 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2742 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.28 ? (typ.) DS (ON) High forward transfer admittance : |Y | = 3.5 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 100 V) DS Enhancement-mode : V = 0.8~2.0 V (V = 10 V, I = 1 mA) th DS D Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 100 V Drain-gate voltage (RGS = 20 k?) VDGR 100 V Gate-source voltage VGSS 20 V DC (Note 1) ID 3 Drain current A Pulse (Note 1) IDP 12 JEDEC ? Drain power dissipation (Note 2) PD 2.5 W JEITA ? Single pulse avalanche energy EAS 140 mJ (Note 3) TOSHIBA 2-7H1B Avalanche current IAR 3 A Weight: 0.12 g (typ.) Repetitive avalanche energy (Note 4) EAR 0.25 mJ Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Mark

5.12. 2sk2718.pdf Size:411K _toshiba

2SK2701A
2SK2701A
2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2718 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 5.6 ? (typ.) (ON) High forward transfer admittance : |Y | = 2.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS D Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 k?) VDGR 900 V Gate-source voltage VGSS 30 V DC (Note 1) ID 2.5 A Drain current Pulse (Note 1) IDP 7.5 A Drain power dissipation (Tc = 25C) PD 40 W Single pulse avalanche energy EAS 216 mJ JEDEC ? (Note 2) Avalanche current IAR 2.5 A JEITA SC-67 Repetitive avalanche energy (Note 3) EAR 4.0 mJ TOSHIBA 2-10R1B Channel temperature Tch 150 C Weight: 1.9 g (typ.) Storage temperature range Tstg -55~150 C Thermal Characteristics Characteristi

5.13. 2sk2777.pdf Size:425K _toshiba

2SK2701A
2SK2701A
2SK2777 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?--MOSV) 2SK2777 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.9 ? (typ.) High forward transfer admittance : |Y | = 5.5 S (typ.) fs Low leakage current : I = 100 A (max) (V = 600 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS D Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k?) VDGR 600 V Gate-source voltage VGSS 30 V DC (Note 1) ID 6 A Drain current Pulse (Note 1) IDP 24 A Drain power dissipation (Tc = 25C) PD 65 W Single pulse avalanche energy EAS 345 mJ JEDEC ? (Note 2) JEITA ? Avalanche current IAR 6 A Repetitive avalanche energy (Note 3) EAR 6.5 mJ TOSHIBA 2-10S1B Channel temperature Tch 150 C Weight: 1.5 g (typ.) Storage temperature range Tstg -55~150 C Thermal Characteristics Cha

5.14. 2sk2776.pdf Size:444K _toshiba

2SK2701A
2SK2701A
2SK2776 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2776 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON-resistance : RDS (ON) = 0.75 ? (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.) Low leakage current : IDSS = 100 ?A (max) (VDS = 500 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 k?) VDGR 500 V Gate-source voltage VGSS 30 V DC (Note 1) ID 8 A Drain current Pulse (Note 1) IDP 32 A Drain power dissipation (Tc = 25C) PD 65 W Single pulse avalanche energy JEDEC ? EAS 312 mJ (Note 2) JEITA ? Avalanche current IAR 8 A TOSHIBA 2-10S1B Repetitive avalanche energy (Note 3) EAR 6.5 mJ Channel temperature Tch 150 C Weight: 1.5 g (typ.) Storage temperature range Tstg -55 to 150 C Note: Using continuousl

5.15. 2sk2719.pdf Size:325K _toshiba

2SK2701A
2SK2701A

5.16. 2sk2775.pdf Size:40K _sanyo

2SK2701A
2SK2701A
Ordering number:ENN6392 N-Channel Silicon MOSFET 2SK2775 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2128 4V drive. [2SK2775] Enables simplified fabrication, high-density mount- 8.2 ing, and miniaturization in end products due to the 7.8 6.2 0.6 surface mountable package. 3 1 2 0.3 1.0 1.0 0.6 2.54 2.54 5.08 7.8 10.0 1 : Gate 6.0 2 : Source 3 : Drain SANYO : ZP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 25 A Drain Current (Pulse) IDP PW? 10 s, duty cycle? 1% 100 A Allowable Power Dissipation PD Tc=25 C 40 W Channel Temperature Tch 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Vol

5.17. 2sk2791.pdf Size:43K _sanyo

2SK2701A
2SK2701A
Ordering number:ENN6437 N-Channel Silicon MOSFET 2SK2791 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2083B 4V drive. [2SK2791] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 2 : Drain 1 2 3 3 : Source 4 : Drain 2.3 2.3 SANYO : TP 2092B [2SK2791] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 0.6 1 : Gate 1.2 0 to 0.2 2 : Drain 3 : Source 4 : Drain 2.3 2.3 SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircrafts control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility

5.18. 2sk2737.pdf Size:89K _renesas

2SK2701A
2SK2701A
2SK2737 Silicon N Channel MOS FET High Speed Power Switching REJ03G1031-0400 (Previous: ADE-208-533B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 10 m? typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220CFM) D G 1. Gate 2. Drain 3. Source 1 2 3 S Rev.4.00 Sep 07, 2005 page 1 of 6 2SK2737 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS 20 V Drain current ID 45 A Drain peak current ID(pulse)Note1 180 A Body-drain diode reverse drain current IDR 45 A Channel dissipation PchNote2 30 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW ? 10s, duty cycle ? 1 % 2. Value at Tc = 25C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 30 V ID = 10 mA, VGS = 0

5.19. 2sk2796.pdf Size:76K _renesas

2SK2701A
2SK2701A
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept

5.20. 2sk2788.pdf Size:78K _renesas

2SK2701A
2SK2701A
2SK2788 Silicon N Channel MOS FET High Speed Power Switching REJ03G1033-0200 (Previous: ADE-208-538) Rev.2.00 Sep.07,2005 Features Low on-resistance RDS(on) = 0.12 ? typ (VGS = 10 V, ID = 1 A) Low drive current High speed switching 4 V gate drive devices. Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) D 1 2 1. Gate 3 2. Drain G 3. Source 4 4. Drain S Note: Marking is VY *UPAK is a trademark of Renesas Technology Corp. Rev.2.00 Sep. 07, 2005 page 1 of 6 2SK2788 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS 20 V Drain current ID 2 A Drain peak current ID(pulse)*1 4 A Body to drain diode reverse drain current IDR 2 A Channel dissipation Pch*2 1 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW ? 10 s, duty cycle ? 1 % 2. When using the alumina ceramic board (12.5 x 20 x 0.7 mm)

5.21. rej03g1029_2sk2735lsds.pdf Size:103K _renesas

2SK2701A
2SK2701A
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular

5.22. 2sk2736.pdf Size:88K _renesas

2SK2701A
2SK2701A
2SK2736 Silicon N Channel MOS FET High Speed Power Switching REJ03G1030-0200 (Previous: ADE-208-544) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 20 m? typ. (VGS = 10 V, ID = 15 A) 4 V gate drive devices. High speed switching Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220CFM) D G 1. Gate 2. Drain 3. Source 1 2 3 S Rev.2.00 Sep 07, 2005 page 1 of 6 2SK2736 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS 20 V Drain current ID 30 A Drain peak current ID(pulse)*1 120 A Body to drain diode reverse drain current IDR 30 A Channel dissipation Pch*2 25 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW ? 10s, duty cycle ? 1 % 2. Value at Tc = 25C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 30 V

5.23. rej03g1034_2sk2796lsds.pdf Size:109K _renesas

2SK2701A
2SK2701A
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular

5.24. r07ds0511ej_2sk2788.pdf Size:76K _renesas

2SK2701A
2SK2701A
Preliminary Datasheet 2SK2788 R07DS0511EJ0300 (Previous: REJ03G1033-0200) Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching Jul 27, 2011 Features ? Low on-resistance RDS(on) = 0.12 ? typ (VGS = 10 V, ID = 1 A) ? Low drive current ? High speed switching ? 4 V gate drive devices. Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK) D 1 2 1. Gate 3 2. Drain G 3. Source 4 4. Drain S Note: Marking is VY Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ?20 V Drain current ID 2 A Drain peak current ID(pulse)*1 4 A Body to drain diode reverse drain current IDR 2 A Channel dissipation Pch*2 1 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW ? 100 ?s, duty cycle ? 10 % 2. When using the alumina ceramic board (12.5 x 20 x 0.7 mm) R07DS0511EJ0300 Rev.3.00 Page 1 of 6 Jul 27, 2011 2SK2788 Preliminary

5.25. 2sk2738.pdf Size:94K _renesas

2SK2701A
2SK2701A
2SK2738 Silicon N Channel MOS FET High Speed Power Switching REJ03G1032-0200 (Previous: ADE-208-483) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS = 15 m? typ High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220CFM) D G 1. Gate 2. Drain 3. Source 1 2 3 S Rev.2.00 Sep 07, 2005 page 1 of 7 2SK2738 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS 20 V Drain current ID 40 A Drain peak current ID(pulse)*1 160 A Body to drain diode reverse drain current IDR 40 A Avalanche current IAP*3 40 A Avalanche Energy EAR*3 137 mJ Channel dissipation Pch*2 30 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW ? 10 s, duty cycle ? 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg ? 50 ? Electrical Characteristics (Ta = 25C)

5.26. 2sk2735.pdf Size:90K _renesas

2SK2701A
2SK2701A
2SK2735(L), 2SK2735(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1029-0200 (Previous: ADE-208-543) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS = 20 m? typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(L)-(2)) (Package name: DPAK(S)) 4 D 4 1. Gate G 2. Drain 1 2 3. Source 3 4. Drain 1 2 S 3 Rev.2.00 Sep 07, 2005 page 1 of 7 2SK2735(L), 2SK2735(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS 20 V Drain current ID 20 A Drain peak current ID(pulse)*1 80 A Body to drain diode reverse drain current IDR 20 A Channel dissipation Pch*2 20 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW ? 10 s, duty cycle ? 1 % 2. Value at Tc = 25C Electrical Characteristics

5.27. 2sk2713_1-5.pdf Size:137K _rohm

2SK2701A
2SK2701A

5.28. 2sk2713.pdf Size:143K _rohm

2SK2701A
2SK2701A
Transistors Switching (450V, 5A) 2SK2713 FFeatures FExternal dimensions (Units: mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 134 Transistors 2SK2713 FElectrical characteristics (Ta = 25_C) FElectrical characteristic curves 135 Transistors 2SK2713 136 Transistors 2SK2713 FSwitching characteristics Fmeasurement circuit 137

5.29. 2sk2740_1-5.pdf Size:138K _rohm

2SK2701A
2SK2701A

5.30. 2sk2731.pdf Size:112K _rohm

2SK2701A
2SK2701A
Transistors Interface and switching (30V, 200mA) 2SK2731 FFeatures FExternal dimensions (Units: mm) 1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FEquivalent circuit 146 Transistors 2SK2731 FElectrical characteristics (Ta = 25_C) FPackaging specifications FElectrical characteristic curves 147 Transistors 2SK2731 148 Transistors 2SK2731 FSwitching characteristics measurement circuit 149

5.31. 2sk2715.pdf Size:138K _rohm

2SK2701A
2SK2701A
Transistors Switching (500V, 2A) 2SK2715 FFeatures FExternal dimensions (Units: mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 142 Transistors 2SK2715 FElectrical characteristics (Ta = 25_C) FElectrical characteristic curves 143 Transistors 2SK2715 144 Transistors 2SK2715 FSwitching characteristics Fmeasurement circuit 145

5.32. 2sk2740.pdf Size:143K _rohm

2SK2701A
2SK2701A
Transistors Switching (600V, 7A) 2SK2740 FFeatures FExternal dimensions (Units: mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 154 Transistors 2SK2740 FElectrical characteristics (Ta = 25_C) FElectrical characteristic curves 155 Transistors 2SK2740 156 Transistors 2SK2740 FSwitching characteristics Fmeasurement circuit 157

5.33. 2sk2715_1-5.pdf Size:133K _rohm

2SK2701A
2SK2701A

5.34. 2sk2711.pdf Size:139K _rohm

2SK2701A
2SK2701A
Transistors Switching (250V, 16A) 2SK2711 FFeatures FExternal dimensions (Units: mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 130 Transistors 2SK2711 FElectrical characteristics (Ta = 25_C) FElectrical characteristic curves 131 Transistors 2SK2711 132 Transistors 2SK2711 FSwitching characteristics Fmeasurement circuit 133

5.35. 2sk2714.pdf Size:144K _rohm

2SK2701A
2SK2701A
Transistors Switching (500V, 10A) 2SK2714 FFeatures FExternal dimensions (Units: mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 138 Transistors 2SK2714 FElectrical characteristics (Ta = 25_C) FElectrical characteristic curves 139 Transistors 2SK2714 140 Transistors 2SK2714 FSwitching characteristics Fmeasurement circuit 141

5.36. 2sk2793.pdf Size:141K _rohm

2SK2701A
2SK2701A
Transistors Switching (500V, 5A) 2SK2793 FFeatures FExternal dimensions (Units: mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 162 Transistors 2SK2793 FElectrical characteristics (Ta = 25_C) FElectrical characteristic curves 163 Transistors 2SK2793 164 Transistors 2SK2793 FSwitching characteristics Fmeasurement circuit 165

5.37. 2sk2739_1-5.pdf Size:139K _rohm

2SK2701A
2SK2701A

5.38. 2sk2714_1-5.pdf Size:137K _rohm

2SK2701A
2SK2701A

5.39. 2sk2792.pdf Size:140K _rohm

2SK2701A
2SK2701A
Transistors Switching (600V, 4A) 2SK2792 FFeatures FExternal dimensions (Units: mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 158 Transistors 2SK2792 FElectrical characteristics (Ta = 25_C) FElectrical characteristic curves 159 Transistors 2SK2792 160 Transistors 2SK2792 FSwitching characteristics Fmeasurement circuit 161

5.40. 2sk2739.pdf Size:145K _rohm

2SK2701A
2SK2701A
Transistors Switching (300V, 16A) 2SK2739 FFeatures FExternal dimensions (Units: mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 150 Transistors 2SK2739 FElectrical characteristics (Ta = 25_C) FElectrical characteristic curves 151 Transistors 2SK2739 152 Transistors 2SK2739 FSwitching characteristics Fmeasurement circuit 153

5.41. 2sk2731_1-5.pdf Size:116K _rohm

2SK2701A
2SK2701A

5.42. 2sk2792_1-5.pdf Size:136K _rohm

2SK2701A
2SK2701A

5.43. 2sk2793_1-5.pdf Size:137K _rohm

2SK2701A
2SK2701A

5.44. 2sk2711_1-5.pdf Size:134K _rohm

2SK2701A
2SK2701A

5.45. 2sk2772.pdf Size:23K _panasonic

2SK2701A
2SK2701A
Power F-MOS FETs 2SK2772 2SK2772(Tentative) Silicon N-Channel MOS Unit : mm For high-speed switching 6.5 0.1 5.3 0.1 4.35 0.1 Features 3.0 0.1 High-speed switching High drain-source voltage (VDSS) 1.0 0.1 0.85 0.1 0.75 0.1 0.5 0.1 4.6 0.1 0.05 to 0.15 Absolute Maximum Ratings (Ta = 25?C) 1 : Gate 1 2 3 2 : Drain Parameter Symbol Rating Unit Marking 3 : Source Drain-Source breakdown voltage VDSS 235 V EIAJ : SC-63 U Type Package Gate-Source voltage VGSS 30 V Drain current ID 4 A Max drain current IDP 8 A PD 0.75 W Allowable power dissipation PD * 10 W Channel temperature Tch 150 ?C Storage temperature Tstg 55 to +150 ?C * TC= 25?C Electrical Characteristics (Ta = 25?C) Parameter Symbol Condition Min Typ Max Unit Drain-Source cut-off current IDSS VDS= 200V, VGS= 0 0.1 m A Gate-Source leakage current IGSS VGS=30V, VDS= 0 1 A Drain-Source breakdown voltage VDSS ID=1mA, VGS= 0 235 V Gate threshold voltage Vth VDS= 25V, ID=1mA 1 5

5.46. 2sk2797.pdf Size:23K _panasonic

2SK2701A
2SK2701A
Power F-MOS FETs 2SK2797 2SK2797(Tentative) Silicon N-Channel MOS Unit : mm For high-speed switching 6.5 0.1 For high-frequency power amplification 5.3 0.1 4.35 0.1 3.0 0.1 Features Avalanche energy capability guaranteed : EAS > 10mJ High-speed switching : tf=15ns No secondary breakdown 1.0 0.1 0.85 0.1 0.75 0.1 0.5 0.1 4.6 0.1 0.05 to 0.15 Absolute Maximum Ratings (Tc = 25?C) Parameter Symbol Rating Unit 1 : Gate 1 2 3 2 : Drain Drain-Source breakdown voltage VDSS 200 V Marking 3 : Source Gate-Source voltage VGSS 30 V EIAJ : SC-63 DC ID 2 A U Type Package Drain current Pulse IDP 4 A Avalanche energy capability EAS *1 10 mJ Allowable power dissipation PD *2 10 W Channel temperature Tch 150 ?C Storage temperature Tstg 55 to +150 ?C * 1 Avalanche energy capability guaranteed * 2 TC= 25?C Electrical Characteristics (Tc = 25?C) Parameter Symbol Condition Min Typ Max Unit Drain-Source cut-off current IDSS VDS=160V, VGS= 0 100 A Conti

5.47. 2sk2751.pdf Size:21K _panasonic

2SK2701A
2SK2701A
Silicon Junction FETs (Small Signal) 2SK2751 2SK2751 Silicon N-Channel Junction Unit : mm For impedance conversion in low frequency +0.2 2.8 0.3 For pyro-electric sensor +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features 1 Low noise-figure (NF) High gate-drain voltage VGDO 3 Downsizing of sets by mini-type package and automatic insertion by 2 taping/magazine packing are available. Absolute Maximum Ratings (Tc = 25?C) Parameter Symbol Rating Unit 0.1 to 0.3 Gate-Drain voltage VGDS 40 V 0.4 0.2 Drain current ID 10 mA Gate current IG 2 mA 1 : Source JEDEC : TO-236 Allowable power dissipation PD 200 mW 2 : Drain EIAJ : SC-59 Channel temperature Tch 150 ?C 3 : Gate Mini Type Package (3-pin) Storage temperature Tstg 55 to +150 ?C Type Name Symbol : HS Electrical Characteristics (Ta = 25?C) Parameter Symbol Condition Min Typ Max Unit Drain-Source cut-off current IDSS VDS=10V, VGS= 0 1 3.7 mA Gate-Source leakage current IGSS VGS= 20V, VDS= 0 1 nA G

5.48. 2sk2790.pdf Size:21K _panasonic

2SK2701A
2SK2701A
Power F-MOS FETs 2SK758 2SK2790(Tentative) Silicon N-Channel Power F-MOS Unit : mm Features Low ON-resistance RDS(on) 8.5 0.2 3.4 0.3 6.0 0.5 1.0 0.1 High-speed switching No secondary breakdown Applications 1.5max. 1.1max. High-speed switching Motor drive 0.8 0.1 0.5max. 2.54 0.3 5.08 0.5 1 2 3 Absolute Maximum Ratings (Tc = 25?C) 1 : Gate Parameter Symbol Rating Unit 2 : Drain Drain-Source breakdown voltage VDSS 250 V 3 : Source N Type Package Gate-Source voltage VGSS 20 V Drain current ID 5 A Max drain current IDP 10 A PD 1.3 W Allowable power dissipation PD * 40 W Channel temperature Tch 150 ?C Storage temperature Tstg 55 to +150 ?C * TC= 25?C Electrical Characteristics (Tc = 25?C) Parameter Symbol Condition Min Typ Max Unit Drain-Source cut-off current IDSS VDS= 200V, VGS= 0 100 A Gate-Source leakage current IGSS VGS= 20V, VDS= 0 1 A Drain-Source breakdown voltage VDSS ID=1mA, VGS= 0 250 V Gate threshold voltage Vth VD

5.49. 2sk2751.pdf Size:179K _utc

2SK2701A
2SK2701A
UNISONIC TECHNOLOGIES CO., LTD 2SK2751 N-CHANNEL JFET N-CHANNEL JUNCTION FET FEATURES * Low noise-figure (NF). * High gate to drain voltage VGDO. APPLICATIONS * For impedance conversion in low frequency. * For pyroelectric sensor. *Pb-free plating product number:2SK2751L ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating 1 2 3 2SK2751-AE3-R 2SK2751L-AE3-R SOT-23 D S G Tape Reel 2SK2751-AL3-R 2SK2751L-AL3-R SOT-323 D S G Tape Reel MARKING www.unisonic.com.tw 1 of 4 Copyright © 2007 Unisonic Technologies Co., Ltd QW-R206-067.C 2SK2751 N-CHANNEL JFET ABSOLUTE MAXIMUM RATINGS (Ta = 25℃) PARAMETER SYMBOL RATINGS UNIT Gate-Drain Voltage VGDS -40 V Drain Current ID 10 mA Gate Current IG 2 mA Allowable Power Dissipation PD 200 mW Channel Temperature TCH +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently d

5.50. 2sk2765-01.pdf Size:77K _fuji

2SK2701A
2SK2701A
FUJI POWER MOSFET 2SK2765-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings FAP-2S Series TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 3. Source UPS (Uninterruptible Power Supply) JEDEC DC-DC converters EIAJ SC-65 Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Drain(D) Drain-source voltage VDS 800 V Continuous drain current ID ±7 A Pulsed drain current ID(puls] ±28 A Gate-source voltage VGS ±35 V Gate(G) Repetitive or non-repetitive IAR *2 7 A Maximum Avalanche Energy EAS *1 267 mJ Source(S) Max. power dissipation PD 125 W Operating and storage Tch +150 °C temperature range Tstg -55 to +150 °C < *1 L=10.0mH, Vcc=80V *2 Tch=150°C Electrical characteristics (Tc =25°C unless otherwise specified) Item Symbol Test Conditions Min.

5.51. 2sk2771-01r.pdf Size:199K _fuji

2SK2701A
2SK2701A

5.52. 2sk2761-01mr.pdf Size:86K _fuji

2SK2701A
2SK2701A
FUJI POWER MOSFET 2SK2761-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings FAP-2S Series TO-220F15 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 2.54 Applications Switching regulators 3. Source UPS (Uninterruptible Power Supply) JEDEC DC-DC converters SC-67 EIAJ Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Drain(D) Drain-source voltage VDS 600 V Continuous drain current ID ±10 A Pulsed drain current ID(puls] ±36 A Gate-source voltage VGS ±35 V Gate(G) Repetitive or non-repetitive IAR *2 10 A Maximum Avalanche Energy EAS *1 64.7 mJ Source(S) Max. power dissipation PD 50 W Operating and storage Tch +150 °C temperature range Tstg -55 to +150 °C < *1 L=1.19mH, Vcc=60V *2 Tch=150°C Electrical characteristics (Tc =25°C unless otherwise specified) Item Symbol Test

5.53. 2sk2728.pdf Size:52K _hitachi

2SK2701A
2SK2701A
2SK2728 Silicon N Channel MOS FET High Speed Power Switching ADE-208-454 B 3rd. Edition Features • Low on-resistance • High speed switching • Low drive current • Avalanche ratings Outline TO–3P D G 1. Gate 2. Drain 1 2 (Flange) 3 3. Source S 2SK2728 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS ± 30 V Drain current ID 18 A Drain peak current ID(pulse)*1 72 A Body to drain diode reverse drain current IDR 18 A Avalanche current IAP*3 18 A Avalanche energy EAR*3 18 mJ Channel dissipation Pch*2 150 W Channel temperature Tch 150 ° C Storage temperature Tstg –55 to +150 ° C Notes: 1. PW ≤ 10µ s, duty cycle ≤ 1 % 2. Value at Tc = 25° C 3. Value at Tch = 25° C, Rg ≥ 50Ω 2 2SK2728 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown V(BR)DSS 500 — — V ID = 10mA, VGS = 0 voltage Gat

5.54. 2sk2795.pdf Size:43K _hitachi

2SK2701A
2SK2701A
2SK2795 Silicon N Channel MOS FET UHF Power Amplifier ADE-208-466 A (Z) 2nd. Edition November. 1996 Features • High power output, High gain, High effeciency PG = 11dB, Pout = 24dBm, ? D = 40 %min. (f = 836.5MHz) • Compact package capable of surface mounting Outline UPAK 1 2 3 4 1. Gate 2. Source 3. Drain 4. Source This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested. 2SK2795 Absolute Maximum Ratings (Ta = 25° C) Item Symbol Ratings Unit Drain to source voltage VDSS 10 V Gate to source voltage VGSS ± 6V Drain current ID 0.17 A Drain peak current ID(pulse)*1 0.3 A Channel dissipation Pch*2 1 W Channel temperature Tch 150 ° C Storage temperature Tstg –45 to +150 ° C Note: 1. PW ? 10ms, duty cycle ? 50 % 2. Value at Tc = 25° C Electrical Characteristics (Ta = 25° C) Item Symbol Min Typ Max Unit Test Conditions Zero gate voltege drain IDSS — — 10 µ A VDS = 10 V, VGS = 0 current Gate to sour

See also transistors datasheet: VEC2415 , 2SK715 , CPH3910 , CPH6904 , MCH3914 , MCH5908 , TF408 , TF410 , SPA11N60C3 , 2SK2943 , 2SK3003 , 2SK3004 , 2SK3199 , 2SK3710 , 2SK3711 , 2SK3800 , 2SK3801 .

Keywords

 2SK2701A Datasheet  2SK2701A Datenblatt  2SK2701A RoHS  2SK2701A Distributor
 2SK2701A Application Notes  2SK2701A Component  2SK2701A Circuit  2SK2701A Schematic
 2SK2701A Equivalent  2SK2701A Cross Reference  2SK2701A Data Sheet  2SK2701A Fiche Technique

 

(C) 2005 All Right reserved Bipolar || MOSFET || IGBT | | Manufacturer Sites || SMD Code || Packages